JPWO2019064906A1 - 半導体デバイスの製造方法 - Google Patents

半導体デバイスの製造方法 Download PDF

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Publication number
JPWO2019064906A1
JPWO2019064906A1 JP2019544360A JP2019544360A JPWO2019064906A1 JP WO2019064906 A1 JPWO2019064906 A1 JP WO2019064906A1 JP 2019544360 A JP2019544360 A JP 2019544360A JP 2019544360 A JP2019544360 A JP 2019544360A JP WO2019064906 A1 JPWO2019064906 A1 JP WO2019064906A1
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JP
Japan
Prior art keywords
manufacturing
semiconductor device
wafer
semiconductor wafer
etching
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
JP2019544360A
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English (en)
Japanese (ja)
Inventor
秀太郎 土持
秀太郎 土持
栄策 丹波
栄策 丹波
聡 池尾
聡 池尾
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Astemo Ltd
Original Assignee
Hitachi Automotive Systems Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Automotive Systems Ltd filed Critical Hitachi Automotive Systems Ltd
Publication of JPWO2019064906A1 publication Critical patent/JPWO2019064906A1/ja
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604—Chemical etching
    • H01L21/30608—Anisotropic liquid etching
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
    • B81C1/00134—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems comprising flexible or deformable structures
    • B81C1/00158—Diaphragms, membranes
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01F—MEASURING VOLUME, VOLUME FLOW, MASS FLOW OR LIQUID LEVEL; METERING BY VOLUME
    • G01F1/00—Measuring the volume flow or mass flow of fluid or fluent solid material wherein the fluid passes through a meter in a continuous flow
    • G01F1/68—Measuring the volume flow or mass flow of fluid or fluent solid material wherein the fluid passes through a meter in a continuous flow by using thermal effects
    • G01F1/684—Structural arrangements; Mounting of elements, e.g. in relation to fluid flow
    • G01F1/688—Structural arrangements; Mounting of elements, e.g. in relation to fluid flow using a particular type of heating, cooling or sensing element
    • G01F1/69—Structural arrangements; Mounting of elements, e.g. in relation to fluid flow using a particular type of heating, cooling or sensing element of resistive type
    • G01F1/692—Thin-film arrangements
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2201/00—Specific applications of microelectromechanical systems
    • B81B2201/02—Sensors
    • B81B2201/0292—Sensors not provided for in B81B2201/0207 - B81B2201/0285

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Fluid Mechanics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Weting (AREA)
  • Pressure Sensors (AREA)
  • Measuring Volume Flow (AREA)
  • Micromachines (AREA)
JP2019544360A 2017-09-28 2018-08-01 半導体デバイスの製造方法 Ceased JPWO2019064906A1 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2017187802 2017-09-28
JP2017187802 2017-09-28
PCT/JP2018/028793 WO2019064906A1 (ja) 2017-09-28 2018-08-01 半導体デバイスの製造方法

Publications (1)

Publication Number Publication Date
JPWO2019064906A1 true JPWO2019064906A1 (ja) 2020-04-02

Family

ID=65903809

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2019544360A Ceased JPWO2019064906A1 (ja) 2017-09-28 2018-08-01 半導体デバイスの製造方法

Country Status (3)

Country Link
JP (1) JPWO2019064906A1 (de)
DE (1) DE112018005482T5 (de)
WO (1) WO2019064906A1 (de)

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006013115A (ja) * 2004-06-25 2006-01-12 Seiko Epson Corp エッチング方法及び微細構造体の製造方法
JP2006303410A (ja) * 2005-03-25 2006-11-02 Fuji Electric Holdings Co Ltd 半導体装置およびその製造方法
JP2008135662A (ja) * 2006-11-29 2008-06-12 Nitto Denko Corp 粘着シートの貼付・剥離方法及び粘着シートの貼付装置並びに粘着シートの剥離装置
JP2008218919A (ja) * 2007-03-07 2008-09-18 Nec Electronics Corp 半導体ウエハの表面保護方法および表面保護構造
JP2010067782A (ja) * 2008-09-10 2010-03-25 Tokyo Seimitsu Co Ltd 表面保護フィルム剥離装置
JP2011124480A (ja) * 2009-12-14 2011-06-23 Nitto Denko Corp 粘着テープ剥離方法およびその装置

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006013115A (ja) * 2004-06-25 2006-01-12 Seiko Epson Corp エッチング方法及び微細構造体の製造方法
JP2006303410A (ja) * 2005-03-25 2006-11-02 Fuji Electric Holdings Co Ltd 半導体装置およびその製造方法
JP2008135662A (ja) * 2006-11-29 2008-06-12 Nitto Denko Corp 粘着シートの貼付・剥離方法及び粘着シートの貼付装置並びに粘着シートの剥離装置
JP2008218919A (ja) * 2007-03-07 2008-09-18 Nec Electronics Corp 半導体ウエハの表面保護方法および表面保護構造
JP2010067782A (ja) * 2008-09-10 2010-03-25 Tokyo Seimitsu Co Ltd 表面保護フィルム剥離装置
JP2011124480A (ja) * 2009-12-14 2011-06-23 Nitto Denko Corp 粘着テープ剥離方法およびその装置

Also Published As

Publication number Publication date
WO2019064906A1 (ja) 2019-04-04
DE112018005482T5 (de) 2020-10-15

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