JPWO2019064524A1 - 研磨液、研磨液セット及び研磨方法 - Google Patents
研磨液、研磨液セット及び研磨方法 Download PDFInfo
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- JPWO2019064524A1 JPWO2019064524A1 JP2019544128A JP2019544128A JPWO2019064524A1 JP WO2019064524 A1 JPWO2019064524 A1 JP WO2019064524A1 JP 2019544128 A JP2019544128 A JP 2019544128A JP 2019544128 A JP2019544128 A JP 2019544128A JP WO2019064524 A1 JPWO2019064524 A1 JP WO2019064524A1
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- Prior art keywords
- polishing
- liquid
- polishing liquid
- copolymer
- styrene
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- NIXOWILDQLNWCW-UHFFFAOYSA-N 2-Propenoic acid Natural products OC(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 claims abstract description 19
- SMZOUWXMTYCWNB-UHFFFAOYSA-N 2-(2-methoxy-5-methylphenyl)ethanamine Chemical compound COC1=CC=C(C)C=C1CCN SMZOUWXMTYCWNB-UHFFFAOYSA-N 0.000 claims abstract description 18
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- OZECDDHOAMNMQI-UHFFFAOYSA-H cerium(3+);trisulfate Chemical compound [Ce+3].[Ce+3].[O-]S([O-])(=O)=O.[O-]S([O-])(=O)=O.[O-]S([O-])(=O)=O OZECDDHOAMNMQI-UHFFFAOYSA-H 0.000 description 1
- UNJPQTDTZAKTFK-UHFFFAOYSA-K cerium(iii) hydroxide Chemical compound [OH-].[OH-].[OH-].[Ce+3] UNJPQTDTZAKTFK-UHFFFAOYSA-K 0.000 description 1
- 239000011246 composite particle Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000004132 cross linking Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 235000019316 curdlan Nutrition 0.000 description 1
- 229940078035 curdlan Drugs 0.000 description 1
- 238000007872 degassing Methods 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 229910000388 diammonium phosphate Inorganic materials 0.000 description 1
- 235000019838 diammonium phosphate Nutrition 0.000 description 1
- NBIIXXVUZAFLBC-UHFFFAOYSA-M dihydrogenphosphate Chemical compound OP(O)([O-])=O NBIIXXVUZAFLBC-UHFFFAOYSA-M 0.000 description 1
- 235000019797 dipotassium phosphate Nutrition 0.000 description 1
- 229910000396 dipotassium phosphate Inorganic materials 0.000 description 1
- BNIILDVGGAEEIG-UHFFFAOYSA-L disodium hydrogen phosphate Chemical compound [Na+].[Na+].OP([O-])([O-])=O BNIILDVGGAEEIG-UHFFFAOYSA-L 0.000 description 1
- 229910000397 disodium phosphate Inorganic materials 0.000 description 1
- 235000019800 disodium phosphate Nutrition 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- CLGFIUWRXDLMGJ-UHFFFAOYSA-N dodecylazanium hydrogen phosphate Chemical compound OP([O-])([O-])=O.CCCCCCCCCCCC[NH3+].CCCCCCCCCCCC[NH3+] CLGFIUWRXDLMGJ-UHFFFAOYSA-N 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- SUPCQIBBMFXVTL-UHFFFAOYSA-N ethyl 2-methylprop-2-enoate Chemical compound CCOC(=O)C(C)=C SUPCQIBBMFXVTL-UHFFFAOYSA-N 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
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- OJCDKHXKHLJDOT-UHFFFAOYSA-N fluoro hypofluorite;silicon Chemical compound [Si].FOF OJCDKHXKHLJDOT-UHFFFAOYSA-N 0.000 description 1
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- LCLHHZYHLXDRQG-ZNKJPWOQSA-N pectic acid Chemical compound O[C@@H]1[C@@H](O)[C@@H](O)O[C@H](C(O)=O)[C@@H]1OC1[C@H](O)[C@@H](O)[C@@H](OC2[C@@H]([C@@H](O)[C@@H](O)[C@H](O2)C(O)=O)O)[C@@H](C(O)=O)O1 LCLHHZYHLXDRQG-ZNKJPWOQSA-N 0.000 description 1
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- 239000005011 phenolic resin Substances 0.000 description 1
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 1
- OYLRFHLPEAGKJU-UHFFFAOYSA-N phosphane silicic acid Chemical compound P.[Si](O)(O)(O)O OYLRFHLPEAGKJU-UHFFFAOYSA-N 0.000 description 1
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- 229920002647 polyamide Polymers 0.000 description 1
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- UMJSCPRVCHMLSP-UHFFFAOYSA-N pyridine Natural products COC1=CC=CN=C1 UMJSCPRVCHMLSP-UHFFFAOYSA-N 0.000 description 1
- IUVKMZGDUIUOCP-BTNSXGMBSA-N quinbolone Chemical compound O([C@H]1CC[C@H]2[C@H]3[C@@H]([C@]4(C=CC(=O)C=C4CC3)C)CC[C@@]21C)C1=CCCC1 IUVKMZGDUIUOCP-BTNSXGMBSA-N 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
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- 150000003839 salts Chemical class 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 235000015424 sodium Nutrition 0.000 description 1
- AJPJDKMHJJGVTQ-UHFFFAOYSA-M sodium dihydrogen phosphate Chemical compound [Na+].OP(O)([O-])=O AJPJDKMHJJGVTQ-UHFFFAOYSA-M 0.000 description 1
- FQENQNTWSFEDLI-UHFFFAOYSA-J sodium diphosphate Chemical compound [Na+].[Na+].[Na+].[Na+].[O-]P([O-])(=O)OP([O-])([O-])=O FQENQNTWSFEDLI-UHFFFAOYSA-J 0.000 description 1
- 229910000162 sodium phosphate Inorganic materials 0.000 description 1
- 235000011008 sodium phosphates Nutrition 0.000 description 1
- JDSVWTAJRNTSSL-UHFFFAOYSA-M sodium;dodecyl hydrogen phosphate Chemical compound [Na+].CCCCCCCCCCCCOP(O)([O-])=O JDSVWTAJRNTSSL-UHFFFAOYSA-M 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- 239000010421 standard material Substances 0.000 description 1
- 239000011550 stock solution Substances 0.000 description 1
- 239000001384 succinic acid Substances 0.000 description 1
- 125000000542 sulfonic acid group Chemical group 0.000 description 1
- 229920003002 synthetic resin Polymers 0.000 description 1
- RYCLIXPGLDDLTM-UHFFFAOYSA-J tetrapotassium;phosphonato phosphate Chemical compound [K+].[K+].[K+].[K+].[O-]P([O-])(=O)OP([O-])([O-])=O RYCLIXPGLDDLTM-UHFFFAOYSA-J 0.000 description 1
- QORWJWZARLRLPR-UHFFFAOYSA-H tricalcium bis(phosphate) Chemical compound [Ca+2].[Ca+2].[Ca+2].[O-]P([O-])([O-])=O.[O-]P([O-])([O-])=O QORWJWZARLRLPR-UHFFFAOYSA-H 0.000 description 1
- 239000001226 triphosphate Substances 0.000 description 1
- 235000011178 triphosphate Nutrition 0.000 description 1
- UNXRWKVEANCORM-UHFFFAOYSA-N triphosphoric acid Chemical compound OP(O)(=O)OP(O)(=O)OP(O)(O)=O UNXRWKVEANCORM-UHFFFAOYSA-N 0.000 description 1
- 229910000404 tripotassium phosphate Inorganic materials 0.000 description 1
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- 229910000406 trisodium phosphate Inorganic materials 0.000 description 1
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- 229910021642 ultra pure water Inorganic materials 0.000 description 1
- 239000012498 ultrapure water Substances 0.000 description 1
- 229940005605 valeric acid Drugs 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
Images
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- B24B57/02—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents for feeding of fluid, sprayed, pulverised, or liquefied grinding, polishing or lapping agents
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- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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- C09D133/00—Coating compositions based on homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides, or nitriles thereof; Coating compositions based on derivatives of such polymers
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Abstract
Description
本明細書において、「研磨液」とは、研磨時に被研磨面に触れる組成物として定義される。「研磨液」という語句自体は、研磨液に含有される成分を何ら限定しない。後述するように、本実施形態に係る研磨液は砥粒(abrasive grain)を含有する。砥粒は、「研磨粒子」(abrasive particle)ともいわれるが、本明細書では「砥粒」という。砥粒は一般的には固体粒子であって、研磨時に、砥粒が有する機械的作用、及び、砥粒(主に砥粒の表面)の化学的作用によって除去対象物が除去(remove)されると考えられるが、研磨のメカニズムは限定されない。
本実施形態に係る研磨液は、砥粒と、添加剤と、液状媒体と、を含有する。「添加剤」とは、研磨速度、研磨選択性等の研磨特性;砥粒の分散性、保存安定性等の研磨液特性などを調整するために、砥粒及び液状媒体以外に研磨液が含有する物質を指す。本実施形態に係る研磨液は、CMP用研磨液として用いることができる。以下、研磨液の必須成分及び任意成分について説明する。
[共重合体]
本実施形態に係る研磨液は、添加剤として、スチレン及びスチレン誘導体からなる群より選ばれる少なくとも一種のスチレン化合物に由来する構造単位(以下、場合により「第1の構造単位」という)と、アクリル酸及びマレイン酸からなる群より選ばれる少なくとも一種に由来する構造単位(以下、場合により「第2の構造単位」という)とを有する共重合体(以下、「共重合体P」という)を含有する。共重合体Pにおいてスチレン化合物に由来する構造単位の比率は、ストッパ材料に対する絶縁材料の研磨選択性、及び、平坦性を向上させる観点から、共重合体Pの全体を基準として15mol%以上である。
[測定方法]
使用機器(検出器):株式会社島津製作所製、「RID−10A」、液体クロマトグラフ用示差屈折率計
ポンプ:株式会社島津製作所製、「RID−10A」
デガス装置:株式会社島津製作所製、「DGU−20A3R」
データ処理:株式会社島津製作所製、「LC solution」
カラム:日立化成テクノサービス株式会社製、「Gelpak GL−W530+Gelpak GL−W540」、内径10.7mm×300mm
溶離液:50mM−Na2HPO4水溶液/アセトニトリル=90/10(v/v)
測定温度:40℃
流量:1.0ml/分
測定時間:60分
試料:樹脂分濃度0.2質量%になるように溶離液と同じ組成の溶液で濃度を調整し、0.45μmのメンブレンフィルターでろ過して調製した試料
注入量:100μl
標準物質:東ソー株式会社製、ポリエチレングリコール/ポリエチレンオキサイド
本実施形態に係る研磨液は、必要に応じて分散剤(砥粒の分散剤。共重合体Pに該当する化合物を除く)を含有することができる。分散剤としては、例えば、リン酸塩化合物;リン酸水素塩化合物;アクリル酸、メタクリル酸、マレイン酸、フマル酸、イタコン酸等の不飽和カルボン酸の単独重合体(ポリアクリル酸等);前記重合体のアンモニウム塩又はアミン塩;アクリル酸、メタクリル酸、マレイン酸、フマル酸、イタコン酸等の不飽和カルボン酸と、アクリル酸アルキル(アクリル酸メチル、アクリル酸エチル等)、アクリル酸ヒドロキシアルキル(アクリル酸ヒドロキシエチル等)、メタクリル酸アルキル(メタクリル酸メチル、メタクリル酸エチル等)、メタクリル酸ヒドロキシアルキル(メタクリル酸ヒドロキシエチル等)、酢酸ビニル、ビニルアルコールなどの単量体との共重合体(アクリル酸とアクリル酸アルキルとの共重合体等);前記共重合体のアンモニウム塩又はアミン塩が挙げられる。分散剤は、一種類を単独で用いてもよく、二種類以上を併用してもよい。
本実施形態に係る研磨液は、pH調整剤(共重合体P又は分散剤に該当する化合物を除く)を含有することができる。pH調整剤により所望のpHに調整することができる。
本実施形態に係る研磨液は、共重合体P、分散剤及びpH調整剤とは別の添加剤を含有することができる。このような添加剤としては、水溶性高分子、pHを安定化させるための緩衝剤等が挙げられる。水溶性高分子としては、アルギン酸、ペクチン酸、カルボキシメチルセルロース、寒天、カードラン、プルラン等の多糖類などが挙げられる。緩衝剤は、緩衝液(緩衝剤を含む液)として添加してもよい。このような緩衝液としては、酢酸塩緩衝液、フタル酸塩緩衝液等が挙げられる。これらの添加剤は、一種類を単独で用いてもよく、二種類以上を併用してもよい。
本実施形態に係る研磨液における液状媒体としては、特に制限はないが、脱イオン水、超純水等の水が好ましい。液状媒体の含有量は、他の構成成分の含有量を除いた研磨液の残部でよく、特に限定されない。
本実施形態に係る研磨液のpHの下限は、研磨液の安定性維持と絶縁材料の研磨速度を更に向上させる観点から、4.0以上が好ましく、4.5以上がより好ましく、4.7以上が更に好ましく、4.9以上が特に好ましい。本実施形態に係る研磨液のpHの上限は、平坦性を更に向上させる観点から、6.5以下が好ましく、6.0以下がより好ましく、5.5以下が更に好ましい。これらの観点から、本実施形態に係る研磨液のpHは、4.0〜6.5であることがより好ましい。研磨液のpHは、25℃における研磨液のpHである。
本実施形態に係る研磨液は、少なくとも砥粒、共重合体P及び液状媒体を含む一液式研磨液として保存してもよい。一液式研磨液は、液状媒体の含有量を減じた研磨液用貯蔵液として保存されると共に、研磨直前又は研磨時に液状媒体で希釈して用いられてもよい。
本実施形態に係る研磨液は、複数液式(例えば二液式)の研磨液セット(例えばCMP用研磨液セット)として、スラリ(第1の液)と添加液(第2の液)とを混合して前記研磨液となるように前記研磨液の構成成分がスラリと添加液とに分けて保存されてもよい。スラリは、例えば、少なくとも砥粒及び液状媒体を含む。添加液は、例えば、少なくとも共重合体P及び液状媒体を含む。共重合体P等の添加剤は、スラリ及び添加液のうち添加液に含まれることが好ましい。前記研磨液の構成成分は、三液以上に分けた研磨液セットとして保存してもよい。
本実施形態に係る研磨方法は、前記一液式研磨液を用いて被研磨面を研磨する研磨工程を備えていてもよく、前記研磨液セットにおけるスラリと添加液とを混合して得られる研磨液を用いて被研磨面を研磨する研磨工程を備えていてもよい。本実施形態に係る研磨方法は、例えば、被研磨面を有する基体の研磨方法である。
(実施例1)
セリア粒子[オキシ炭酸セリウム由来の粒子。オキシ炭酸セリウムを酸化して得られたセリア粒子]5質量%、リン酸二水素アンモニウム(分散剤)0.05質量%、及び、水94.95質量%を含有するスラリ用貯蔵液200gと、スチレン/アクリル酸共重合体(共重合体P)[ST/AA、スチレン比率:50mol%、Mw:14000]0.25質量%、及び、水99.75質量%を含有する添加剤用貯蔵液1700gとを混合した後、研磨液のpHが5.1に調整されるように10質量%酢酸水溶液を加えた。そして、全量が2000gとなるように水を加えて、セリア粒子0.5質量%、スチレン/アクリル酸共重合体0.2質量%、及び、リン酸二水素アンモニウム0.005質量%を含有するCMP用研磨液(2000g)を調製した。
砥粒として炭酸セリウム由来のセリア粒子[炭酸セリウムを酸化して得られたセリア粒子]を用い、分散剤としてアクリル酸/アクリル酸メチル共重合体(AA/AM、Mw:8000)を用いたこと以外は実施例1と同様にしてCMP用研磨液を調製した。
共重合体Pとしてスチレン/アクリル酸共重合体[スチレン比率:30mol%、Mw:16000]を用いたこと以外は実施例1と同様にしてCMP用研磨液を調製した。
共重合体Pとしてスチレン/アクリル酸共重合体[スチレン比率:30mol%、Mw:8000]を用いたこと以外は実施例1と同様にしてCMP用研磨液を調製した。
砥粒として炭酸セリウム由来のセリア粒子を用いたこと以外は実施例3と同様にしてCMP用研磨液を調製した。
共重合体Pとしてスチレン/アクリル酸共重合体[スチレン比率:20mol%、Mw:18000]を用いたこと以外は実施例1と同様にしてCMP用研磨液を調製した。
共重合体Pとしてスチレン/アクリル酸共重合体[スチレン比率:15mol%、Mw:17000]を用いたこと以外は実施例1と同様にしてCMP用研磨液を調製した。
共重合体Pとしてスチレン/マレイン酸共重合体[ST/MA、スチレン比率:50mol%、Mw:6000]を用いたこと以外は実施例1と同様にしてCMP用研磨液を調製した。
実施例1の共重合体Pをスチレン/アクリル酸共重合体[スチレン比率:10mol%、Mw:15000]に変更したこと以外は実施例1と同様にしてCMP用研磨液を調製した。
実施例5の共重合体Pをスチレン/アクリル酸共重合体[スチレン比率:10mol%、Mw:15000]に変更したこと以外は実施例5と同様にしてCMP用研磨液を調製した。
実施例2の共重合体Pをスチレン/アクリル酸共重合体[スチレン比率:10mol%、Mw:15000]に変更したこと以外は実施例2と同様にしてCMP用研磨液を調製した。
実施例1の共重合体Pをポリアクリル酸[PAA、スチレン比率:0mol%、Mw:2000]に変更したこと以外は実施例1と同様にしてCMP用研磨液を調製した。
実施例5の共重合体Pをポリアクリル酸[スチレン比率:0mol%、Mw:2000]に変更したこと以外は実施例5と同様にしてCMP用研磨液を調製した。
実施例2の共重合体Pをポリアクリル酸[スチレン比率:0mol%、Mw:2000]に変更したこと以外は実施例2と同様にしてCMP用研磨液を調製した。
前記で得られたCMP用研磨液のpH、CMP用研磨液中の砥粒の平均粒径、及び、砥粒のゼータ電位(表面電位)を下記のとおり評価した。
測定温度:25±5℃
測定装置:株式会社堀場製作所製、型番D−51
測定方法:標準緩衝液(フタル酸塩pH緩衝液、pH:4.01(25℃);中性リン酸塩pH緩衝液、pH:6.86(25℃);ホウ酸塩pH緩衝液、pH:9.18(25℃))を用いて3点校正した後、電極をCMP用研磨液に入れて、2分以上経過して安定した後のpHを前記測定装置により測定した。
マイクロトラック・ベル株式会社製のMicrotrac MT3300EXII(商品名)内にCMP用研磨液を適量投入し、砥粒の平均粒径を測定した。表示された平均粒径値を平均粒径(平均二次粒径、D50)として得た。平均粒径は150nmであった。
ベックマン・コールター株式会社製のDelsaNano C(装置名)の濃厚セルユニットにCMP用研磨液を適量投入してセットした。25℃において測定を2回行い、表示されたゼータ電位の平均値をゼータ電位として得た。ゼータ電位は−50mVであった。
前記CMP用研磨液を用いて下記研磨条件で被研磨基板を研磨した。パターンウエハの研磨は、実施例1〜4、8及び比較例1、2のCMP用研磨液を用いて行った。
・研磨装置:Reflexion LK(APPLIED MATERIALS社製)
・CMP用研磨液の流量:250ml/min
・被研磨基板:下記ブランケットウエハ及びパターンウエハ
・研磨パッド:独立気泡を有する発泡ポリウレタン樹脂(ローム・アンド・ハース・ジャパン株式会社製、型番IC1010)
・研磨圧力:3.0psi
・基板と研磨定盤の回転数:基板/研磨定盤=93/87rpm
・研磨時間:ブランケットウエハでは、1分間研磨を行った。パターンウエハの研磨時間は表に示す。
・ウエハの乾燥:CMP処理後、スピンドライヤで乾燥させた。
パターンが形成されていないブランケットウエハ(BTW)として、プラズマCVD法で形成された厚さ1μmの酸化珪素膜をシリコン基板上に有する基体と、CVD法で形成された厚さ0.2μmの窒化珪素膜をシリコン基板上に有する基体と、CVD法で形成された厚さ0.15μmのポリシリコン膜をシリコン基板上に有する基体と、を用いた。
模擬パターンが形成されたパターンウエハ(PTW)として、SEMATECH社製、764ウエハ(商品名、直径:300mm)を用いた。当該パターンウエハは、ストッパとして窒化珪素膜をシリコン基板上に積層後、露光・現像工程においてトレンチを形成した後、ストッパ及びトレンチを埋めるようにシリコン基板及びストッパの上に絶縁膜として酸化珪素膜(SiO2膜)を積層することにより得られたウエハであった。酸化珪素膜は、HDP(High Density Plasma)法により成膜されたものであった。
前記条件で研磨及び洗浄したブランケットウエハの各被研磨膜(酸化珪素膜、窒化珪素膜、及び、ポリシリコン膜)の研磨速度を下記式より求めた。研磨前後での各被研磨膜の膜厚差は、光干渉式膜厚測定装置(フィルメトリクス株式会社製、商品名:F80)を用いて求めた。また、窒化珪素に対する酸化珪素の研磨選択比、及び、ポリシリコンに対する酸化珪素の研磨選択比を算出した。
(研磨速度)=(研磨前後での各被研磨膜の膜厚差[nm])/(研磨時間[min])
パターンウエハの研磨速度(PTWRR)、残段差量(ディッシング量)、及び、窒化珪素ロス量(ストッパロス量)を算出した。残段差量及び窒化珪素ロス量は、ストッパが露出した時点(表に記載の研磨時間の左側)と、ストッパ露出後からPTWRRで約100nm分の時間削り込んだ時点(表に記載の研磨時間の右側。初期からの総研磨時間)とについて算出した。
(パターンウエハ研磨速度:PTWRR)=(研磨前の凸部の酸化珪素膜の膜厚[nm])/(凸部のストッパが露出するまでの研磨時間[min])
(窒化珪素ロス量[nm])=(凸部のストッパの初期膜厚:150[nm])−(凸部のストッパの研磨後の残膜厚[nm])
Claims (17)
- 砥粒と、共重合体と、液状媒体と、を含有し、
前記共重合体が、スチレン及びスチレン誘導体からなる群より選ばれる少なくとも一種のスチレン化合物に由来する構造単位と、アクリル酸及びマレイン酸からなる群より選ばれる少なくとも一種に由来する構造単位とを有し、
前記共重合体において前記スチレン化合物に由来する構造単位の比率が15mol%以上である、研磨液。 - 前記砥粒のゼータ電位が負である、請求項1に記載の研磨液。
- 前記スチレン化合物に由来する構造単位の比率が15〜60mol%である、請求項1又は2に記載の研磨液。
- 前記共重合体が、スチレンに由来する構造単位を有する、請求項1〜3のいずれか一項に記載の研磨液。
- 前記共重合体が、アクリル酸に由来する構造単位を有する、請求項1〜4のいずれか一項に記載の研磨液。
- 前記共重合体が、マレイン酸に由来する構造単位を有する、請求項1〜5のいずれか一項に記載の研磨液。
- 25℃の水に対する前記スチレン化合物の溶解度が0.1g/100ml以下である、請求項1〜6のいずれか一項に記載の研磨液。
- 前記共重合体の重量平均分子量が20000以下である、請求項1〜7のいずれか一項に記載の研磨液。
- 前記共重合体の含有量が0.05〜2.0質量%である、請求項1〜8のいずれか一項に記載の研磨液。
- 前記砥粒が、セリア、シリカ、アルミナ、ジルコニア及びイットリアからなる群より選択される少なくとも一種を含む、請求項1〜9のいずれか一項に記載の研磨液。
- 前記砥粒が、オキシ炭酸セリウム由来のセリアを含む、請求項1〜10のいずれか一項に記載の研磨液。
- リン酸塩、及び、アクリル酸に由来する構造単位を有する重合体からなる群より選ばれる少なくとも一種を更に含有する、請求項1〜11のいずれか一項に記載の研磨液。
- 酸化珪素を含む被研磨面を研磨するために使用される、請求項1〜12のいずれか一項に記載の研磨液。
- 請求項1〜13のいずれか一項に記載の研磨液の構成成分が第1の液と第2の液とに分けて保存され、前記第1の液が、前記砥粒及び液状媒体を含み、前記第2の液が、前記共重合体及び液状媒体を含む、研磨液セット。
- 請求項1〜13のいずれか一項に記載の研磨液、又は、請求項14に記載の研磨液セットにおける前記第1の液と前記第2の液とを混合して得られる研磨液を用いて被研磨面を研磨する工程を備える、研磨方法。
- 絶縁材料及び窒化珪素を含む被研磨面の研磨方法であって、
請求項1〜13のいずれか一項に記載の研磨液、又は、請求項14に記載の研磨液セットにおける前記第1の液と前記第2の液とを混合して得られる研磨液を用いて前記絶縁材料を前記窒化珪素に対して選択的に研磨する工程を備える、研磨方法。 - 絶縁材料及びポリシリコンを含む被研磨面の研磨方法であって、
請求項1〜13のいずれか一項に記載の研磨液、又は、請求項14に記載の研磨液セットにおける前記第1の液と前記第2の液とを混合して得られる研磨液を用いて前記絶縁材料を前記ポリシリコンに対して選択的に研磨する工程を備える、研磨方法。
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JP7187770B2 (ja) * | 2017-11-08 | 2022-12-13 | Agc株式会社 | 研磨剤と研磨方法、および研磨用添加液 |
WO2020170331A1 (ja) * | 2019-02-19 | 2020-08-27 | 日立化成株式会社 | 研磨液及び研磨方法 |
CN115466574A (zh) * | 2022-09-21 | 2022-12-13 | 深圳市东方亮化学材料有限公司 | 一种双组份的金属研磨抛光膏的加工方法 |
WO2024089920A1 (ja) * | 2022-10-27 | 2024-05-02 | 株式会社レゾナック | 砥粒及びその選定方法、研磨液、複数液式研磨液、研磨方法、部品の製造方法、並びに、半導体部品の製造方法 |
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SG11202002314WA (en) | 2020-04-29 |
KR20200039773A (ko) | 2020-04-16 |
JP2022040139A (ja) | 2022-03-10 |
TW201920535A (zh) | 2019-06-01 |
TWI803518B (zh) | 2023-06-01 |
JP7167042B2 (ja) | 2022-11-08 |
TW202321392A (zh) | 2023-06-01 |
CN117050726A (zh) | 2023-11-14 |
KR102398392B1 (ko) | 2022-05-13 |
KR20230134157A (ko) | 2023-09-20 |
CN111149193B (zh) | 2023-09-08 |
US20210189176A1 (en) | 2021-06-24 |
TWI830572B (zh) | 2024-01-21 |
CN111149193A (zh) | 2020-05-12 |
KR20220065096A (ko) | 2022-05-19 |
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