JPWO2018155710A1 - 面発光レーザ及び面発光レーザの製造方法 - Google Patents
面発光レーザ及び面発光レーザの製造方法 Download PDFInfo
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 18
- 239000000758 substrate Substances 0.000 claims abstract description 32
- 238000005253 cladding Methods 0.000 claims abstract description 25
- 238000000034 method Methods 0.000 claims abstract description 23
- 239000004065 semiconductor Substances 0.000 claims abstract description 22
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 14
- 239000007789 gas Substances 0.000 claims abstract description 13
- 150000004767 nitrides Chemical class 0.000 claims abstract description 9
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 7
- 239000002994 raw material Substances 0.000 claims abstract description 5
- 238000005530 etching Methods 0.000 claims abstract description 4
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 claims abstract 2
- 239000004038 photonic crystal Substances 0.000 description 73
- 239000000463 material Substances 0.000 description 16
- 229910004205 SiNX Inorganic materials 0.000 description 13
- 238000001878 scanning electron micrograph Methods 0.000 description 12
- 230000004888 barrier function Effects 0.000 description 10
- 230000000694 effects Effects 0.000 description 10
- 229910002601 GaN Inorganic materials 0.000 description 9
- 238000010438 heat treatment Methods 0.000 description 9
- 125000004429 atom Chemical group 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 6
- 230000000052 comparative effect Effects 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 230000005855 radiation Effects 0.000 description 5
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 4
- 238000001312 dry etching Methods 0.000 description 4
- 230000010355 oscillation Effects 0.000 description 4
- 239000011148 porous material Substances 0.000 description 4
- 229910002704 AlGaN Inorganic materials 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- 238000010894 electron beam technology Methods 0.000 description 3
- RGGPNXQUMRMPRA-UHFFFAOYSA-N triethylgallium Chemical compound CC[Ga](CC)CC RGGPNXQUMRMPRA-UHFFFAOYSA-N 0.000 description 3
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 2
- 238000005238 degreasing Methods 0.000 description 2
- PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical compound [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 description 2
- QPJSUIGXIBEQAC-UHFFFAOYSA-N n-(2,4-dichloro-5-propan-2-yloxyphenyl)acetamide Chemical compound CC(C)OC1=CC(NC(C)=O)=C(Cl)C=C1Cl QPJSUIGXIBEQAC-UHFFFAOYSA-N 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 230000000737 periodic effect Effects 0.000 description 2
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000002109 crystal growth method Methods 0.000 description 1
- 238000003795 desorption Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 230000004927 fusion Effects 0.000 description 1
- QBJCZLXULXFYCK-UHFFFAOYSA-N magnesium;cyclopenta-1,3-diene Chemical compound [Mg+2].C1C=CC=[C-]1.C1C=CC=[C-]1 QBJCZLXULXFYCK-UHFFFAOYSA-N 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 125000004433 nitrogen atom Chemical group N* 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 1
- 238000000927 vapour-phase epitaxy Methods 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
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Abstract
Description
(a)基板上に第1導電型の第1のクラッド層を成長する工程と、
(b)前記第1のクラッド層上に前記第1導電型の第1のガイド層を成長する工程と、
(c)前記第1のガイド層に、エッチングにより前記第1のガイド層に平行な面内において2次元的な周期性を有する空孔を形成する工程と、
(d)III族原料及び窒素源を含むガスを供給して、前記空孔の開口上部に所定の面方位のファセットを有する凹部が形成されるように成長を行って、前記空孔の開口部を塞ぐ工程と、
(e)前記空孔の前記開口部を塞いだ後、マストランスポートによって前記凹部を平坦化する工程と、を有し、
前記工程(e)の実行後における前記空孔の側面のうち少なくとも1つが{10−10}ファセットであることを特徴としている。
基板上に形成された第1導電型の第1のクラッド層と、
前記第1のクラッド層上に形成され、層に平行な面内において2次元的な周期性を有して配された空孔を内部に有する前記第1導電型の第1のガイド層と、
前記第1のガイド層上に形成された発光層と、
前記発光層上に形成された、前記第1導電型と反対導電型の第2導電型の第2のガイド層と、
前記第2のガイド層上に形成された前記第2導電型の第2のクラッド層と、を有し、
前記空孔の側面のうち少なくとも1つが{10−10}ファセットであることを特徴としている。
[フォトニック結晶面発光レーザの共振効果]
フォトニック結晶部を備えた面発光レーザ(以下、単にフォトニック結晶面発光レーザという場合がある。)において共振効果を得るためには、フォトニック結晶部での回折効果が高いことが望まれる。
(1)発振波長をλ、フォトニック結晶部の実効的な屈折率をneffとしたとき、フォトニック結晶部における2次元的な屈折率周期Pが、正方格子2次元フォトニック結晶の場合はP=mλ/neff(mは自然数)を、三角格子2次元フォトニック結晶の場合はP=mλ×2/(31/2×neff)(mは自然数)を満たす、
(2)フォトニック結晶部における母材に対する異屈折率領域の占める割合(FF:フィリングファクタ)が十分に大きい、
(3)フォトニック結晶面発光レーザにおける光強度分布のうち、フォトニック結晶部に分布する光強度の割合(ΓPC:閉じ込め係数)が十分に大きい、
ことが望まれる。
[クラッド層及びガイド層の成長]
半導体構造層11の作製工程について以下に詳細に説明する。結晶成長方法としてMOVPE(Metalorganic Vapor Phase Epitaxy)法を用い、常圧(大気圧)成長により成長基板11上に半導体構造層11を成長した。
n−ガイド層14を成長後の基板、すなわちガイド層付きの基板(以下、ガイド層基板という。)をMOVPE装置から取り出し、n−ガイド層14に微細な空孔(ホール)を形成した。図3及び図4を参照して、空孔の形成について以下に詳細に説明する。なお、図3は当該空孔CHの形成工程を模式的に示す断面図である。また、図4は、空孔CHの形成後の工程におけるガイド層基板の表面及び断面の走査型電子顕微鏡(SEM:Scanning Electron Microscope)の像を示している。なお、図4の上段にはガイド層基板の表面SEM像が示され、下段に表面SEM像中に示した破線(白色)に沿った断面SEM像が示されている。
n−ガイド層14に2次元的な周期性を持つ空孔CHを形成したガイド層基板のSiNx膜SNをフッ酸(HF)を用いて除去し(図3、(vi))、脱脂洗浄を行って清浄表面を得、再度MOVPE装置内に導入した。
空孔CHが{10−11}ファセットで閉塞された後、III族材料ガスの供給を停止し、V族材料ガス(NH3)を供給しながら100℃/minの昇温速度で1200℃まで昇温し、温度を保持した。1200℃で1分保持(熱処理)した後の空孔の表面は図4に示すように変化した(図4、(b))。すなわち、n−ガイド層14の表面に形成されていた{10−11}ファセットは消失し、表面は平坦な(0001)面となった。すなわち、マストランスポートによって表面が平坦化され、n−ガイド層14の表面を(0001)面に変化させた。
続いて活性層15として、5層の量子井戸層を含む多重量子井戸(MQW) 層を成長した。多重量子井戸のバリア層及び井戸層はそれぞれGaN及びInGaNで構成され、それぞれの層厚は、5.0nm、3.5nmであった。また、本実施例における活性層からのPL発光の中心波長は405nmであった。
上記実施例1においては、{10−11}ファセットを成長させることで、空孔CHを閉塞した。閉塞された空孔CHの上面には(000−1)面が現れ、側面には{10−10}面が現れる。
表面平坦化においては、埋め込まれた空孔CHの上部の{10−11}ファセットを、マストランスポートによって平坦化させ、ガイド層の表面を(0001)面に変化させる。
比較例1として、実施例1の平坦化工程(マストランスポート)と同様な工程のみによって空孔CHの埋め込みを行った。すなわち、III族原料の供給を停止し、窒素源を供給しながら昇温・加熱する工程のみによって空孔CHの埋め込みを行った。
12:基板
13:n−クラッド層
14:n−ガイド層
14P:フォトニック結晶層
14C:空孔
15:活性層
16:ガイド層
18:p−クラッド層
Claims (10)
- MOVPE法によりIII族窒化物半導体からなる面発光レーザを製造する製造方法であって、
(a)基板上に第1導電型の第1のクラッド層を成長する工程と、
(b)前記第1のクラッド層上に前記第1導電型の第1のガイド層を成長する工程と、
(c)前記第1のガイド層に、エッチングにより前記第1のガイド層に平行な面内において2次元的な周期性を有する空孔を形成する工程と、
(d)III族原料及び窒素源を含むガスを供給して、前記空孔の開口上部に所定の面方位のファセットを有する凹部が形成されるように成長を行って、前記空孔の開口部を塞ぐ工程と、
(e)前記空孔の前記開口部を塞いだ後、マストランスポートによって前記凹部を平坦化する工程と、を有し、
前記平坦化する工程の実行後における前記空孔の側面のうち少なくとも1つが{10−10}ファセットである面発光レーザの製造方法。 - 前記第1のガイド層の成長表面は(0001) 面であり、前記工程(e)の後における前記空孔の前記発光層側の面が(000−1)面である請求項1に記載の製造方法。
- 前記工程(e)の後における前記空孔の前記第1のクラッド層側の面が{1−102}ファセットを含む請求項1又は2に記載の製造方法。
- 前記工程(d)において、前記所定の面方位のファセットは{10−11}ファセットを含む請求項1ないし3のいずれか1に記載の製造方法。
- 前記工程(d)における成長温度は900℃以上、1100℃以下である請求項1ないし4のいずれか1に記載の製造方法。
- 前記工程(e)における前記マストランスポートの温度は1100℃以上である請求項1ないし5のいずれか1に記載の製造方法。
- III族窒化物半導体からなる面発光レーザであって、
基板上に形成された第1導電型の第1のクラッド層と、
前記第1のクラッド層上に形成され、層に平行な面内において2次元的な周期性を有して配された空孔を内部に有する前記第1導電型の第1のガイド層と、
前記第1のガイド層上に形成された発光層と、
前記発光層上に形成された、前記第1導電型と反対導電型の第2導電型の第2のガイド層と、
前記第2のガイド層上に形成された前記第2導電型の第2のクラッド層と、を有し、
前記空孔の側面のうち少なくとも1つが{10−10}ファセットである面発光レーザ。 - 前記発光層に接する前記第1のガイド層の面は(0001)面であり、前記空孔の前記発光層側の面が(000−1) 面である請求項7に記載の面発光レーザ。
- 前記空孔は多角柱形状を有し、前記空孔の側面のうち少なくとも1つが{10−10}ファセットである請求項7又は8に記載の面発光レーザ。
- 前記空孔は多角柱形状を有し、前記第1のガイド層に平行な断面における対角線に関して非対称な断面を有する請求項7ないし9のいずれか1に記載の面発光レーザ。
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JP6371486B2 (ja) | 2016-07-08 | 2018-08-08 | TAK−Circulator株式会社 | インターロイキン6、インターロイキン13、tnf、g−csf、cxcl1、cxcl2、又はcxcl5に起因する疾病の予防又は治療剤をスクリーニングする方法、及びインターロイキン6、インターロイキン13、tnf、g−csf、cxcl1、cxcl2、又はcxcl5に起因する疾病の予防又は治療剤 |
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Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004111766A (ja) * | 2002-09-20 | 2004-04-08 | Toshiba Corp | 窒化ガリウム系半導体素子及びその製造方法 |
JP2009130110A (ja) * | 2007-11-22 | 2009-06-11 | Sumitomo Electric Ind Ltd | Iii族窒化物系面発光素子およびその製造方法 |
JP2011035078A (ja) * | 2009-07-30 | 2011-02-17 | Canon Inc | 窒化物半導体の微細構造の製造方法 |
JP2012015228A (ja) * | 2010-06-30 | 2012-01-19 | Canon Inc | 窒化物半導体の微細構造の製造方法、二次元フォトニック結晶による面発光レーザとその製造方法 |
JP2012033705A (ja) * | 2010-07-30 | 2012-02-16 | Kyoto Univ | 2次元フォトニック結晶レーザ |
JP2013093367A (ja) * | 2011-10-24 | 2013-05-16 | Canon Inc | フォトニック結晶面発光レーザの製造方法 |
US20130163628A1 (en) * | 2011-12-21 | 2013-06-27 | Canon Kabushiki Kaisha | Process for forming microstructure of nitride semiconductor, surface emitting laser using two-dimensional photonic crystal and production process thereof |
JP2013135001A (ja) * | 2011-12-23 | 2013-07-08 | Canon Inc | 微細構造の製造方法 |
Family Cites Families (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CH480839A (de) | 1967-01-16 | 1969-11-15 | Sandoz Ag | Haarfärbemittel |
US6734111B2 (en) * | 2001-08-09 | 2004-05-11 | Comlase Ab | Method to GaAs based lasers and a GaAs based laser |
US7538357B2 (en) * | 2004-08-20 | 2009-05-26 | Panasonic Corporation | Semiconductor light emitting device |
WO2006062084A1 (ja) | 2004-12-08 | 2006-06-15 | Sumitomo Electric Industries, Ltd. | 半導体レーザ素子およびその製造方法 |
JP5453105B2 (ja) * | 2006-12-22 | 2014-03-26 | クナノ アーベー | ナノ構造のled及びデバイス |
WO2008100504A1 (en) * | 2007-02-12 | 2008-08-21 | The Regents Of The University Of California | Cleaved facet (ga,al,in)n edge-emitting laser diodes grown on semipolar {11-2n} bulk gallium nitride substrates |
CN101267089B (zh) * | 2007-03-12 | 2010-10-06 | 中国科学院上海微系统与信息技术研究所 | 一种垂直腔面发射光子晶体表面波激光器及其设计方法 |
KR101414911B1 (ko) * | 2007-03-23 | 2014-07-04 | 스미토모덴키고교가부시키가이샤 | 포토닉 결정 레이저 및 포토닉 결정 레이저의 제조방법 |
JP5118544B2 (ja) * | 2007-05-15 | 2013-01-16 | キヤノン株式会社 | 面発光レーザ素子 |
JP2010161329A (ja) * | 2008-12-08 | 2010-07-22 | Canon Inc | 二次元フォトニック結晶を備えた面発光レーザ |
WO2011013363A1 (ja) | 2009-07-30 | 2011-02-03 | キヤノン株式会社 | 微細構造の製造方法 |
JP5047258B2 (ja) * | 2009-12-09 | 2012-10-10 | キヤノン株式会社 | 二次元フォトニック結晶面発光レーザ |
US9130348B2 (en) * | 2010-07-30 | 2015-09-08 | Kyoto University | Two-dimensional photonic crystal laser |
JP5549011B2 (ja) * | 2010-07-30 | 2014-07-16 | 浜松ホトニクス株式会社 | 半導体面発光素子及びその製造方法 |
JP5627361B2 (ja) * | 2010-09-16 | 2014-11-19 | キヤノン株式会社 | 2次元フォトニック結晶面発光レーザ |
CN102005696B (zh) * | 2010-09-30 | 2011-10-12 | 中国科学院半导体研究所 | 一种硅基光子晶体槽状波导微腔激光器 |
WO2012082523A2 (en) * | 2010-12-16 | 2012-06-21 | California Institute Of Technology | Chemically-etched nanostructures and related devices |
CN103650176B (zh) * | 2011-07-12 | 2016-12-14 | 丸文株式会社 | 发光元件及其制造方法 |
JP2013161965A (ja) * | 2012-02-06 | 2013-08-19 | Kyoto Univ | 半導体発光素子 |
CN103107482A (zh) * | 2013-01-29 | 2013-05-15 | 中国科学院半导体研究所 | 单模光子晶体垂直腔面发射激光器及其制备方法 |
JP6202572B2 (ja) * | 2014-02-06 | 2017-09-27 | 国立大学法人京都大学 | 半導体レーザモジュール |
JP2019501872A (ja) * | 2015-11-05 | 2019-01-24 | イー・アイ・デュポン・ドウ・ヌムール・アンド・カンパニーE.I.Du Pont De Nemours And Company | 架橋性正孔輸送材料 |
-
2018
- 2018-02-27 EP EP18757376.1A patent/EP3588704B1/en active Active
- 2018-02-27 US US16/488,595 patent/US11283243B2/en active Active
- 2018-02-27 CN CN201880013880.2A patent/CN110337764B/zh active Active
- 2018-02-27 JP JP2019501872A patent/JP7101370B2/ja active Active
- 2018-02-27 WO PCT/JP2018/007272 patent/WO2018155710A1/ja active Application Filing
-
2022
- 2022-05-27 JP JP2022086644A patent/JP7442151B2/ja active Active
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004111766A (ja) * | 2002-09-20 | 2004-04-08 | Toshiba Corp | 窒化ガリウム系半導体素子及びその製造方法 |
JP2009130110A (ja) * | 2007-11-22 | 2009-06-11 | Sumitomo Electric Ind Ltd | Iii族窒化物系面発光素子およびその製造方法 |
JP2011035078A (ja) * | 2009-07-30 | 2011-02-17 | Canon Inc | 窒化物半導体の微細構造の製造方法 |
JP2012015228A (ja) * | 2010-06-30 | 2012-01-19 | Canon Inc | 窒化物半導体の微細構造の製造方法、二次元フォトニック結晶による面発光レーザとその製造方法 |
JP2012033705A (ja) * | 2010-07-30 | 2012-02-16 | Kyoto Univ | 2次元フォトニック結晶レーザ |
JP2013093367A (ja) * | 2011-10-24 | 2013-05-16 | Canon Inc | フォトニック結晶面発光レーザの製造方法 |
US20130163628A1 (en) * | 2011-12-21 | 2013-06-27 | Canon Kabushiki Kaisha | Process for forming microstructure of nitride semiconductor, surface emitting laser using two-dimensional photonic crystal and production process thereof |
JP2013135001A (ja) * | 2011-12-23 | 2013-07-08 | Canon Inc | 微細構造の製造方法 |
Non-Patent Citations (1)
Title |
---|
YOSHIMOTO SUSUMU, ET AL.: "GaN Photonic-Crystal Surface-Emitting Laser Operating at Blue-Violet Wavelengths", LASER AND ELECTRO-OPTICS SOCIETY (LEOS) 2008, vol. 21st Annual Meeting of the IEEE, JPN6018015138, November 2008 (2008-11-01), ISSN: 0004798240 * |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20230283049A1 (en) * | 2019-12-16 | 2023-09-07 | Kyoto University | Surface-emitting laser device and method for manufacturing surface-emitting laser device |
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