JPWO2018051494A1 - 加熱装置、基板加熱装置および半導体デバイスの製造方法 - Google Patents
加熱装置、基板加熱装置および半導体デバイスの製造方法 Download PDFInfo
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- 238000010438 heat treatment Methods 0.000 title claims abstract description 94
- 239000000758 substrate Substances 0.000 title claims abstract description 38
- 238000004519 manufacturing process Methods 0.000 title claims description 8
- 239000004065 semiconductor Substances 0.000 title description 5
- 230000001133 acceleration Effects 0.000 claims description 39
- 229910045601 alloy Inorganic materials 0.000 claims description 2
- 239000000956 alloy Substances 0.000 claims description 2
- YXTPWUNVHCYOSP-UHFFFAOYSA-N bis($l^{2}-silanylidene)molybdenum Chemical compound [Si]=[Mo]=[Si] YXTPWUNVHCYOSP-UHFFFAOYSA-N 0.000 claims description 2
- 239000012535 impurity Substances 0.000 claims description 2
- 229910021344 molybdenum silicide Inorganic materials 0.000 claims description 2
- 230000000052 comparative effect Effects 0.000 description 14
- 238000004088 simulation Methods 0.000 description 6
- 230000008859 change Effects 0.000 description 5
- 230000005684 electric field Effects 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 230000007423 decrease Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 230000020169 heat generation Effects 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 238000000137 annealing Methods 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 230000002123 temporal effect Effects 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67109—Apparatus for thermal treatment mainly by convection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B3/00—Ohmic-resistance heating
- H05B3/10—Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor
- H05B3/12—Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor characterised by the composition or nature of the conductive material
- H05B3/14—Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor characterised by the composition or nature of the conductive material the material being non-metallic
- H05B3/145—Carbon only, e.g. carbon black, graphite
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B3/00—Ohmic-resistance heating
- H05B3/20—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater
- H05B3/22—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible
- H05B3/24—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible heating conductor being self-supporting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/0445—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising crystalline silicon carbide
- H01L21/0455—Making n or p doped regions or layers, e.g. using diffusion
- H01L21/046—Making n or p doped regions or layers, e.g. using diffusion using ion implantation
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Control Of Resistance Heating (AREA)
- Electron Sources, Ion Sources (AREA)
- Discharge Heating (AREA)
- Resistance Heating (AREA)
Abstract
Description
Rr+Rs=50V/0.0167A≒3000Ω
である。フィラメント130と電子反射板120との間の抵抗値Rsは前述のように167Ωであるので、抵抗器160の抵抗値Rrは2.8kΩとなる。つまり、この例では、抵抗器160の抵抗値Rrを2.8kΩ以上とすることによってヒータ110の温度の低下(温度の不均一性)を1°C以内に抑えることができる。
Claims (11)
- ヒータ(110)と、電子反射板(120)と、前記ヒータ(110)と前記電子反射板(120)との間に配置されたフィラメント(130)と、前記フィラメント(130)の第1端子(A)および第2端子(B)の間に交流電圧を供給して前記フィラメント(130)から熱電子を放出させる加熱電源(140)と、前記フィラメント(130)と前記ヒータ(110)との間に加速電圧を供給する加速電源(150)とを備える加熱装置であって、
前記電子反射板(120)と前記加熱電源(140)とを接続する経路(170)を構成するように配置された抵抗器(160)を備えることを特徴とする加熱装置。 - 前記加熱電源(140)が前記フィラメント(130)に前記交流電圧を供給することによって、前記フィラメント(130)、前記電子反射板(120)および前記経路(170)を通る閉回路(CC)が構成される、
ことを特徴とする請求項1に記載の加熱装置。 - 前記加熱電源(140)は、前記フィラメント(130)の第1端子(A)に接続された第3端子(C)と、前記フィラメント(130)の第2端子(B)に接続された第4端子(D)とを有し、前記加速電源(140)は、前記第4端子(D)と前記ヒータ(11との間に前記加速電圧を供給し、前記抵抗器(160)は、前記電子反射板(120)と前記第4端子(D)とを接続するように前記経路(170)を構成する、
ことを特徴とする請求項1又は2に記載の加熱装置。 - 前記加熱電源(140)は、前記フィラメント(130)の第1端子(A)に接続された第3端子(D)と、前記フィラメントの第2端子に接続された第4端子とを有し、前記加速電源は、前記第4端子と前記ヒータ(130)との間に前記加速電圧を供給し、前記抵抗器(160)は、前記電子反射板(120)と前記第3端子(C)とを接続するように前記経路(170)を構成する、
ことを特徴とする請求項1又は2に記載の加熱装置。 - 前記抵抗器(160)は、前記加熱電源(140)が前記フィラメント(130)に前記交流電圧を供給している状態における前記フィラメント(130)と前記電子反射板(120)との間の抵抗値よりも高い抵抗値を有する、
ことを特徴とする請求項1乃至4のいずれか1項に記載の加熱装置。 - 前記抵抗器(160)は、100Ω以上かつ100kΩ以下の抵抗値を有する、
ことを特徴とする請求項1乃至4のいずれか1項に記載の加熱装置。 - 前記抵抗器(160)は、1kΩ以上かつ10kΩ以下の抵抗値を有する、
ことを特徴とする請求項6に記載の加熱装置。 - 前記抵抗器(160)は、モリブデンシリサイド合金を含む、
ことを特徴とする請求項1乃至7のいずれか1項に記載の加熱装置。 - 前記フィラメント(130)は、シングルループのフィラメントである、
ことを特徴とする請求項1乃至8のいずれか1項に記載の加熱装置。 - 基板(S)を保持する基板保持部(18)と、
前記基板保持部(180)によって保持された前記基板(S)を加熱するように配置された請求項1乃至9のいずれか1項に記載の加熱装置と、
を備えることを特徴とする基板加熱装置。 - 基板(S)に不純物を注入する工程と、
該基板(S)を請求項1乃至10のいずれか1項に記載の基板加熱装置を用いて加熱する工程と、
を含むことを特徴とするデバイス製造方法。
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PCT/JP2016/077490 WO2018051494A1 (ja) | 2016-09-16 | 2016-09-16 | 加熱装置、基板加熱装置および半導体デバイスの製造方法 |
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JP6068738B1 JP6068738B1 (ja) | 2017-01-25 |
JPWO2018051494A1 true JPWO2018051494A1 (ja) | 2018-09-13 |
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US (1) | US10056273B2 (ja) |
JP (1) | JP6068738B1 (ja) |
CN (1) | CN108076683B (ja) |
TW (1) | TWI649825B (ja) |
WO (1) | WO2018051494A1 (ja) |
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JP7176927B2 (ja) * | 2018-10-30 | 2022-11-22 | 浜松ホトニクス株式会社 | Cemアセンブリおよび電子増倍デバイス |
US10871715B2 (en) | 2018-12-06 | 2020-12-22 | Asml Netherlands B.V. | Lithographic apparatus and a device manufacturing method |
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JPH0945624A (ja) * | 1995-07-27 | 1997-02-14 | Tokyo Electron Ltd | 枚葉式の熱処理装置 |
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JP5253774B2 (ja) * | 2007-08-09 | 2013-07-31 | 助川電気工業株式会社 | 背面電子衝撃加熱装置 |
JP5468784B2 (ja) | 2008-01-30 | 2014-04-09 | キヤノンアネルバ株式会社 | 基板加熱装置、加熱処理方法および半導体デバイスを製造する方法 |
JP4520512B2 (ja) * | 2008-02-13 | 2010-08-04 | キヤノンアネルバ株式会社 | 加熱装置 |
JP4617364B2 (ja) * | 2008-02-29 | 2011-01-26 | キヤノンアネルバ株式会社 | 基板加熱装置及び処理方法 |
JP2013021129A (ja) * | 2011-07-11 | 2013-01-31 | Toshiba Corp | エッチング装置及び半導体装置の製造方法 |
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- 2016-09-16 JP JP2016565360A patent/JP6068738B1/ja active Active
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US10056273B2 (en) | 2018-08-21 |
TW201830547A (zh) | 2018-08-16 |
US20180082865A1 (en) | 2018-03-22 |
TWI649825B (zh) | 2019-02-01 |
WO2018051494A1 (ja) | 2018-03-22 |
JP6068738B1 (ja) | 2017-01-25 |
CN108076683B (zh) | 2021-03-09 |
CN108076683A (zh) | 2018-05-25 |
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