JPWO2018021259A1 - 赤外光素子 - Google Patents
赤外光素子 Download PDFInfo
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- JPWO2018021259A1 JPWO2018021259A1 JP2018529884A JP2018529884A JPWO2018021259A1 JP WO2018021259 A1 JPWO2018021259 A1 JP WO2018021259A1 JP 2018529884 A JP2018529884 A JP 2018529884A JP 2018529884 A JP2018529884 A JP 2018529884A JP WO2018021259 A1 JPWO2018021259 A1 JP WO2018021259A1
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- infrared light
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- 239000004065 semiconductor Substances 0.000 claims abstract description 42
- 239000000758 substrate Substances 0.000 claims abstract description 17
- 239000004020 conductor Substances 0.000 claims abstract description 16
- 230000003287 optical effect Effects 0.000 claims abstract description 13
- 239000012212 insulator Substances 0.000 claims abstract description 12
- 230000008878 coupling Effects 0.000 claims abstract description 5
- 238000010168 coupling process Methods 0.000 claims abstract description 5
- 238000005859 coupling reaction Methods 0.000 claims abstract description 5
- 230000031700 light absorption Effects 0.000 claims description 14
- 238000000862 absorption spectrum Methods 0.000 claims description 13
- 229910052751 metal Inorganic materials 0.000 claims description 13
- 239000002184 metal Substances 0.000 claims description 13
- 230000005284 excitation Effects 0.000 claims description 10
- 239000012535 impurity Substances 0.000 claims description 9
- 230000007704 transition Effects 0.000 claims description 9
- 239000000463 material Substances 0.000 claims description 8
- 230000005684 electric field Effects 0.000 claims description 7
- 230000010287 polarization Effects 0.000 claims description 4
- 239000000203 mixture Substances 0.000 claims description 2
- 238000001514 detection method Methods 0.000 abstract description 6
- 230000010355 oscillation Effects 0.000 description 9
- 239000013078 crystal Substances 0.000 description 7
- 230000000694 effects Effects 0.000 description 7
- 230000005855 radiation Effects 0.000 description 7
- 239000000126 substance Substances 0.000 description 3
- 230000003993 interaction Effects 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 238000005215 recombination Methods 0.000 description 2
- 230000006798 recombination Effects 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- 229910002704 AlGaN Inorganic materials 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 238000001069 Raman spectroscopy Methods 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000005535 acoustic phonon Effects 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 239000002772 conduction electron Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000001066 destructive effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000005274 electronic transitions Effects 0.000 description 1
- 238000000295 emission spectrum Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 102000004169 proteins and genes Human genes 0.000 description 1
- 108090000623 proteins and genes Proteins 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 230000005641 tunneling Effects 0.000 description 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/35—Non-linear optics
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S1/00—Masers, i.e. devices using stimulated emission of electromagnetic radiation in the microwave range
- H01S1/02—Masers, i.e. devices using stimulated emission of electromagnetic radiation in the microwave range solid
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- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
- Light Receiving Elements (AREA)
Abstract
Description
図1は、本実施形態に係る赤外光素子の構造を示す図である。
Claims (9)
- 半導体又は絶縁体の基板に、ストライプ状、格子状又は円環状の導電体が形成され、その間隔が縦光学(LO)フォノンエネルギーに共鳴する赤外光の1/2波長以下であって、当該モードに共鳴する赤外光を発光する又は検出する赤外光素子。
- 半導体又は絶縁体の基板に、ストライプ状、格子状又は円環状の導電体が形成され、その間隔がLOフォノン−プラズモンの結合(LOPC)モードエネルギーに共鳴する赤外光の1/2波長以下であって、当該モードに共鳴する赤外光を発光する又は検出する赤外光素子。
- 前記基板は、2種以上の元素組成の多層構造から成り、フォノンを閉じ込める機能を有する請求項1又は2に記載の赤外光素子。
- 前記基板がn型又はp型の半導体であり、2種以上のLOフォノンモード又はLOPCモードを有し、前記LOフォノン又はLOPCモードエネルギーが伝導帯若しくは価電子内、または伝導帯若しくは価電子帯間の遷移エネルギー領域に含まれる請求項1又は2に記載の赤外光素子。
- 前記基板がp型半導体である場合、p型不純物以外にこれより深い準位を形成するアクセプタ性の準位を有する半導体であり、
前記基板がn型半導体である場合は、n型不純物以外にこれより深い準位を形成するドナー性の不純物を有する半導体であり、
禁制帯幅より小さいエネルギーをもつレーザを導入することによって、光吸収スペクトルを変調して動作する請求項4に記載の赤外光素子。 - 価電子帯−伝導帯のバンド間励起を行うレーザを導入して、光吸収スペクトルを変調できる請求項4記載の赤外光素子。
- 1ps以下の時間幅をもつパルス光を入力することにより量子もつれ現象を伴った単一赤外光子を輻射する請求項4記載の赤外光素子。
- 金属の代わりに導電率が高い半導体その他の材料を用いて、導電率が低い半導体との界面に生じる分極電荷により生じる電場を遮蔽できる構造をもつ請求項1又は2記載の赤外光素子
- 半導体との接合がオーミック接続となる金属とショットキー接続となる金属が対となって形成されている請求項1又は2に記載の赤外光素子。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2016144974 | 2016-07-23 | ||
JP2016144974 | 2016-07-23 | ||
PCT/JP2017/026743 WO2018021259A1 (ja) | 2016-07-23 | 2017-07-24 | 赤外光素子 |
Publications (2)
Publication Number | Publication Date |
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JPWO2018021259A1 true JPWO2018021259A1 (ja) | 2019-05-16 |
JP6829517B2 JP6829517B2 (ja) | 2021-02-10 |
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JP2018529884A Active JP6829517B2 (ja) | 2016-07-23 | 2017-07-24 | 赤外光素子 |
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WO (1) | WO2018021259A1 (ja) |
Citations (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0595131A (ja) * | 1991-08-02 | 1993-04-16 | Hamamatsu Photonics Kk | 半導体受光素子 |
JPH0974239A (ja) * | 1995-09-04 | 1997-03-18 | Hiroshima Univ | 固体テラヘルツ帯電磁波発生装置 |
JP2004226531A (ja) * | 2003-01-21 | 2004-08-12 | Matsushita Electric Ind Co Ltd | 電磁波強度変調器 |
JP2005195707A (ja) * | 2003-12-26 | 2005-07-21 | Semiconductor Res Found | テラヘルツ電磁波発振器 |
WO2006030608A1 (ja) * | 2004-09-13 | 2006-03-23 | Kyushu Institute Of Technology | テラヘルツ電磁波放射素子及びその製造方法 |
JP2007300022A (ja) * | 2006-05-02 | 2007-11-15 | Material Design Factory:Kk | テラヘルツ波増幅装置、テラヘルツ波変調装置ならびにこれを用いた通信装置およびセンシング装置 |
JP2008002960A (ja) * | 2006-06-22 | 2008-01-10 | National Institute For Materials Science | 固体のキャリア移動度測定方法 |
JP2008052224A (ja) * | 2006-08-28 | 2008-03-06 | National Institute Of Information & Communication Technology | コヒーレントフォノンによるテラヘルツ電磁波発生方法 |
JP2011077396A (ja) * | 2009-09-30 | 2011-04-14 | Panasonic Corp | テラヘルツ波放射素子 |
JP2011155024A (ja) * | 2008-04-10 | 2011-08-11 | Mitsuteru Kimura | テラヘルツ波放射素子及びこれを用いたテラヘルツ波放射装置 |
US20110198515A1 (en) * | 2008-05-06 | 2011-08-18 | U.S. Government As Represented By The Secretary Of The Army | Terahertz radiation device and method of generating terahertz radiation |
JP2011181708A (ja) * | 2010-03-02 | 2011-09-15 | Canon Inc | 光素子 |
JP2011211191A (ja) * | 2010-03-12 | 2011-10-20 | Sumitomo Chemical Co Ltd | 半導体基板、半導体基板の製造方法、および電磁波発生装置 |
JP2012047595A (ja) * | 2010-08-26 | 2012-03-08 | Hiroshima Univ | テラヘルツ波検出装置 |
JP2015524166A (ja) * | 2012-05-25 | 2015-08-20 | インペリアル イノベーションズ リミテッドImperial Innovations Limited | マイクロ波または高周波の誘導放出を発生させるためのデバイスおよび方法 |
JP2016014785A (ja) * | 2014-07-02 | 2016-01-28 | 富士通株式会社 | 光子発生装置及び光子発生方法 |
JP2016111219A (ja) * | 2014-12-08 | 2016-06-20 | 公立大学法人大阪府立大学 | 光伝導素子、テラヘルツ波発生装置、テラヘルツ波検出装置、テラヘルツ波発生方法およびテラヘルツ波検出方法 |
-
2017
- 2017-07-24 WO PCT/JP2017/026743 patent/WO2018021259A1/ja active Application Filing
- 2017-07-24 JP JP2018529884A patent/JP6829517B2/ja active Active
Patent Citations (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0595131A (ja) * | 1991-08-02 | 1993-04-16 | Hamamatsu Photonics Kk | 半導体受光素子 |
JPH0974239A (ja) * | 1995-09-04 | 1997-03-18 | Hiroshima Univ | 固体テラヘルツ帯電磁波発生装置 |
JP2004226531A (ja) * | 2003-01-21 | 2004-08-12 | Matsushita Electric Ind Co Ltd | 電磁波強度変調器 |
JP2005195707A (ja) * | 2003-12-26 | 2005-07-21 | Semiconductor Res Found | テラヘルツ電磁波発振器 |
WO2006030608A1 (ja) * | 2004-09-13 | 2006-03-23 | Kyushu Institute Of Technology | テラヘルツ電磁波放射素子及びその製造方法 |
JP2007300022A (ja) * | 2006-05-02 | 2007-11-15 | Material Design Factory:Kk | テラヘルツ波増幅装置、テラヘルツ波変調装置ならびにこれを用いた通信装置およびセンシング装置 |
JP2008002960A (ja) * | 2006-06-22 | 2008-01-10 | National Institute For Materials Science | 固体のキャリア移動度測定方法 |
JP2008052224A (ja) * | 2006-08-28 | 2008-03-06 | National Institute Of Information & Communication Technology | コヒーレントフォノンによるテラヘルツ電磁波発生方法 |
JP2011155024A (ja) * | 2008-04-10 | 2011-08-11 | Mitsuteru Kimura | テラヘルツ波放射素子及びこれを用いたテラヘルツ波放射装置 |
US20110198515A1 (en) * | 2008-05-06 | 2011-08-18 | U.S. Government As Represented By The Secretary Of The Army | Terahertz radiation device and method of generating terahertz radiation |
JP2011077396A (ja) * | 2009-09-30 | 2011-04-14 | Panasonic Corp | テラヘルツ波放射素子 |
JP2011181708A (ja) * | 2010-03-02 | 2011-09-15 | Canon Inc | 光素子 |
JP2011211191A (ja) * | 2010-03-12 | 2011-10-20 | Sumitomo Chemical Co Ltd | 半導体基板、半導体基板の製造方法、および電磁波発生装置 |
JP2012047595A (ja) * | 2010-08-26 | 2012-03-08 | Hiroshima Univ | テラヘルツ波検出装置 |
JP2015524166A (ja) * | 2012-05-25 | 2015-08-20 | インペリアル イノベーションズ リミテッドImperial Innovations Limited | マイクロ波または高周波の誘導放出を発生させるためのデバイスおよび方法 |
JP2016014785A (ja) * | 2014-07-02 | 2016-01-28 | 富士通株式会社 | 光子発生装置及び光子発生方法 |
JP2016111219A (ja) * | 2014-12-08 | 2016-06-20 | 公立大学法人大阪府立大学 | 光伝導素子、テラヘルツ波発生装置、テラヘルツ波検出装置、テラヘルツ波発生方法およびテラヘルツ波検出方法 |
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WO2018021259A1 (ja) | 2018-02-01 |
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