JPWO2017170529A1 - 太陽電池素子および太陽電池モジュール - Google Patents
太陽電池素子および太陽電池モジュール Download PDFInfo
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- 238000002161 passivation Methods 0.000 claims abstract description 87
- 239000004065 semiconductor Substances 0.000 claims abstract description 54
- 230000002093 peripheral effect Effects 0.000 claims description 38
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- 238000013459 approach Methods 0.000 claims description 9
- 239000010410 layer Substances 0.000 description 51
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- 229910052782 aluminium Inorganic materials 0.000 description 23
- 238000006243 chemical reaction Methods 0.000 description 19
- 239000011521 glass Substances 0.000 description 15
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 14
- 239000000463 material Substances 0.000 description 13
- 238000009792 diffusion process Methods 0.000 description 12
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- 239000002019 doping agent Substances 0.000 description 11
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- 229910052751 metal Inorganic materials 0.000 description 11
- 239000002184 metal Substances 0.000 description 11
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 9
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 9
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 8
- 229910052581 Si3N4 Inorganic materials 0.000 description 8
- 238000010304 firing Methods 0.000 description 8
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 8
- 239000002994 raw material Substances 0.000 description 8
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 8
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 7
- 239000000969 carrier Substances 0.000 description 7
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 7
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
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- 239000000843 powder Substances 0.000 description 6
- 238000007650 screen-printing Methods 0.000 description 6
- 239000002344 surface layer Substances 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
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- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 5
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 4
- 125000004429 atom Chemical group 0.000 description 4
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- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 3
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 3
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- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
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- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 2
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- 230000003287 optical effect Effects 0.000 description 2
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- 230000035515 penetration Effects 0.000 description 2
- RLOWWWKZYUNIDI-UHFFFAOYSA-N phosphinic chloride Chemical compound ClP=O RLOWWWKZYUNIDI-UHFFFAOYSA-N 0.000 description 2
- XHXFXVLFKHQFAL-UHFFFAOYSA-N phosphoryl trichloride Chemical compound ClP(Cl)(Cl)=O XHXFXVLFKHQFAL-UHFFFAOYSA-N 0.000 description 2
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- VOITXYVAKOUIBA-UHFFFAOYSA-N triethylaluminium Chemical compound CC[Al](CC)CC VOITXYVAKOUIBA-UHFFFAOYSA-N 0.000 description 2
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- 229910052727 yttrium Inorganic materials 0.000 description 2
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 2
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- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 229910052779 Neodymium Inorganic materials 0.000 description 1
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 1
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- 125000000217 alkyl group Chemical group 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- FFBHFFJDDLITSX-UHFFFAOYSA-N benzyl N-[2-hydroxy-4-(3-oxomorpholin-4-yl)phenyl]carbamate Chemical compound OC1=C(NC(=O)OCC2=CC=CC=C2)C=CC(=C1)N1CCOCC1=O FFBHFFJDDLITSX-UHFFFAOYSA-N 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
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- 239000011737 fluorine Substances 0.000 description 1
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- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
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- QEFYFXOXNSNQGX-UHFFFAOYSA-N neodymium atom Chemical compound [Nd] QEFYFXOXNSNQGX-UHFFFAOYSA-N 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
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- 238000004544 sputter deposition Methods 0.000 description 1
- DLYUQMMRRRQYAE-UHFFFAOYSA-N tetraphosphorus decaoxide Chemical compound O1P(O2)(=O)OP3(=O)OP1(=O)OP2(=O)O3 DLYUQMMRRRQYAE-UHFFFAOYSA-N 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
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Abstract
Description
<1−1.太陽電池素子>
図1から図3で示されるように、太陽電池素子10は、主として光が入射する表(おもて)側に位置する第1面10aと、この第1面10aの反対側(裏側)に位置する第2面10bと、を有している。
次に、太陽電池素子10の製造方法の各工程について、説明する。
図8(a)および図8(b)で示されるように、太陽電池モジュール20は、複数の太陽電池素子10を有する太陽電池パネル23と、太陽電池パネル23の外周部に位置しているフレーム24と、を有している。太陽電池モジュール20は、主として光を受ける面である第1面20aと、第1面20aの裏面に相当する第2面20bと、を有している。そして、太陽電池モジュール20は、図8(b)で示されるように、第2面20b上に端子箱25を有している。また、端子箱25には、太陽電池モジュール20で発生した電力を外部の回路に供給するための出力ケーブル26が配線されている。
本開示は上記一実施形態に限定されるものではなく、本開示の範囲内で多くの修正および変更を加えることができる。例えば、電極を形成する際の焼成は、成分が類似した表面電極7と裏面電極8の第3電極8cとを形成するための焼成を行った後に、第1電極8aおよび第2電極8bを形成するための焼成を別途行ってもよい。
例えば、図12で示されるように、上記第1実施形態の太陽電池素子10を基本として、保護膜11をさらに備えている、第2実施形態の太陽電池素子10Aが採用されてもよい。図12の例では、保護膜11は、太陽電池素子10Aの第2面10b側において、パッシベーション膜4と第2電極8bとの間に位置している。また、保護膜11は、第1孔部9の上に位置している第2孔部19を有している。このため、第1孔部9と第2孔部19とが連通している1つの貫通孔を形成している。また、第1電極8aは、第1孔部9内に加えて、第2孔部19内にも位置している。換言すれば、第1電極8aは、第1孔部9内から第2孔部19内にかけて位置している。
1a :第1面
1b :第2面
2 :第1半導体層
3 :第2半導体層
4 :パッシベーション膜
5 :反射防止膜
7 :表面電極
7a :バスバー電極
7b :フィンガー電極
7c :サブフィンガー電極
8 :裏面電極
8a :第1電極
8b :第2電極
8bh: 第2電極の高抵抗部分
8c :第3電極
8c1 :第1の第3電極
8c2 :第2の第3電極
8c3 :第3の第3電極
9 :第1孔部
10 :太陽電池素子
10a :第1面
10b :第2面
11 :保護膜
13 :BSF層
16 :第1ペースト
17 :第2ペースト
18 :第3ペースト
19 :第2孔部
20 :太陽電池モジュール
20a :第1面
20b :第2面
23 :太陽電池パネル
24 :フレーム
25 :端子箱
26 :出力ケーブル
27 :横方向配線
28 :透光性基板
29 :表面側充填材
30 :裏面側充填材
31 :裏面材
32 :外部導出配線
Claims (7)
- 半導体基板と、
該半導体基板の上に位置し、複数の第1孔部を有しているパッシベーション膜と、
各前記第1孔部内に位置し、前記半導体基板に電気的に接続している第1電極と、
該第1電極に電気的に接続し、前記パッシベーション膜の上に位置している第2電極と、
前記第1電極に前記第2電極を介して電気的に接続し、第1方向に直線状に延びるように位置している1つ以上の第3電極と、を備え、
前記パッシベーション膜は、平面透視して、前記1つ以上の第3電極に隣接している第1領域において前記複数の第1孔部が占める面積の割合が、前記第1領域よりも前記1つ以上の第3電極から離れて位置していて前記第1領域と同一面積の第2領域において前記複数の第1孔部が占める面積の割合よりも小さい部分を有している、太陽電池素子。 - 請求項1に記載の太陽電池素子であって、
前記パッシベーション膜と前記第2電極との間に位置し、前記複数の第1孔部の上に位置している複数の第2孔部を有する保護膜、をさらに備え、
前記第1電極は、各前記第1孔部内に加えて各前記第2孔部内にも位置している、太陽電池素子。 - 請求項1または請求項2に記載の太陽電池素子であって、
前記1つ以上の第3電極は、前記第1方向に直交する第2方向にならんでいる複数の第3電極を含んでいる、太陽電池素子。 - 請求項1から請求項3の何れか1つの請求項に記載の太陽電池素子であって、
前記1つ以上の第3電極は、互いに隣り合う、第1の第3電極と、第2の第3電極と、を含み、
前記パッシベーション膜は、平面透視して、前記第1の第3電極と前記第2の第3電極との間において、前記複数の第1孔部が占める面積の割合が前記第1の第3電極または第2の第3電極に近くなるほど小さくなっている部分を有している、太陽電池素子。 - 請求項1から請求項4の何れか1つの請求項に記載の太陽電池素子であって、
各前記第3電極は、複数の島状部を有し、
前記パッシベーション膜は、平面透視して、前記第1方向に向かって、前記複数の第1孔部が占める面積の割合が前記複数の島状部の少なくとも1つの島状部に近くなるほど小さくなっている部分を有している、太陽電池素子。 - 請求項1から請求項5の何れか1つの請求項に記載の太陽電池素子であって、
各前記第3電極は、長手方向において、第1端部と、該第1端部の逆側に位置している第2端部と、を有し、
前記パッシベーション膜は、平面透視して、前記長手方向において、前記第1端部と前記半導体基板の前記第1端部側に位置している周縁部との間および前記第2端部と前記半導体基板の前記第2端部側に位置している周縁部との間で、前記複数の第1孔部が占める面積の割合が前記1つ以上の第3電極に近くなるほど小さくなっている部分を有している、太陽電池素子。 - 請求項1から請求項6の何れか1つの請求項に記載の太陽電池素子と、前記1つ以上の第3電極の上において前記第1方向へ向かって延びるように位置している接続タブと、を備えている、太陽電池モジュール。
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