JPWO2017131009A1 - 固体撮像装置 - Google Patents
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Abstract
Description
図1は、本明細書に開示された第1の実施形態に係る固体撮像装置を示す断面図である。同図に示すように、本実施形態の固体撮像装置は、基板1と、基板1の上部に設けられ、光電変換を行う複数の受光部2と、複数の受光部2の各々により生成された電荷を蓄積するメモリー部3と、各受光部2で光電変換により生成された電荷をメモリー部3へと転送させるゲート部4と、基板1及びゲート部4上に設けられ、複数の金属配線20が形成された少なくとも一層の配線層6と、ゲート部4と配線層6との間に配置され、受光部2のそれぞれの上方領域に開口部が形成された遮光膜5と、受光部2の直上であって、金属配線20の配線間の領域に、遮光膜5の開口部及び配線層6を貫通するように設けられた第1の透明絶縁膜10とを備えている。
図5A〜図5Dは、第1の実施形態に係る固体撮像装置の製造方法を示す図である。
図6は、第2の実施形態に係る固体撮像装置を示す断面図である。以下では、図1に示す第1の実施形態と異なる部分を中心に説明を行う。
図7は、第3の実施形態に係る固体撮像装置を示す断面図である。
図10は、第4の実施形態に係る固体撮像装置を示す断面図である。また、図11Aは、第1の実施形態に係る固体撮像装置において、遮光膜の平面形状を示す平面図であり、図11Bは、当該固体撮像装置のメモリー部に入射する光の強度を示す図である。図12Aは、第4の実施形態に係る固体撮像装置において、遮光膜の形状を示す平面図であり、図12Bは、当該固体撮像装置のメモリー部に入射する光の強度を示す図である。
2 受光部
3 メモリー部
4 ゲート部
5 遮光膜
6 配線層
7 パッシベーション膜
8 第1の突起部
9 オンチップレンズ
10 第1の透明絶縁膜
11 平坦化膜
13a、13b 反射防止膜
14 第2の突起部
17 透明材料膜
20 金属配線
22、24、24a、24b、24c、24d、28、122 光
25 層間絶縁膜
30 レジストマスク
112 層内レンズ
Claims (14)
- 基板と、
前記基板の上部に設けられ、光電変換を行う複数の受光部と、
前記基板の上部に、前記複数の受光部ごとに設けられ、前記複数の受光部の各々により生成された電荷を蓄積するメモリー部と、
前記基板上に設けられ、複数の金属配線が形成された少なくとも一層の配線層と、
前記複数の受光部の直上であって、前記複数の金属配線の間の領域に、前記配線層を貫通するように設けられた第1の透明絶縁膜と、
前記配線層上及び前記第1の透明絶縁膜上を覆い、前記第1の透明絶縁膜よりも高い屈折率を有する透明保護膜と、
前記透明保護膜上に、前記複数の受光部のそれぞれの上方に位置するように設けられ、四辺形の平面形状を有する柱状の第1の突起部と、
前記第1の突起部上に設けられ、前記第1の突起部よりも低い屈折率を有する第2の透明絶縁膜とを備えている固体撮像装置。 - 請求項1に記載の固体撮像装置において、
前記透明保護膜と前記第1の突起部とは、同一の透明材料膜で構成され、前記透明材料膜の下部は前記透明保護膜となっており、前記透明材料膜の上部は前記第1の突起部となっていることを特徴とする固体撮像装置。 - 請求項1又は2に記載の固体撮像装置において、
前記基板上には、前記複数の受光部のうち1つの受光部と、前記受光部に対応する1つのメモリー部とを含むセルが、複数個形成されており、
前記第1の突起部の平面形状における一辺の長さは、前記セルのサイズの60%以上80%以下であることを特徴とする固体撮像装置。 - 請求項1又は2に記載の固体撮像装置において、
前記基板上には、前記複数の受光部のうち1つの受光部と、前記受光部に対応する1つのメモリー部とを含むセルが、複数個形成されており、
前記第1の突起部の高さは、前記セルのサイズの5%以上30%以下であることを特徴とする固体撮像装置。 - 請求項1〜4のうちいずれか1つに記載の固体撮像装置において、
第2の透明絶縁膜のうち、前記第1の突起部の上方に位置する部分上に設けられ、複数の色のいずれかに応じた波長の光を選択的に透過するカラーフィルタをさらに備え、
前記第1の突起部の平面形状における所定の方向の幅は、当該第1の突起部の上方に設けられた前記カラーフィルタが透過する光の波長が長い程、大きくなっていることを特徴とする固体撮像装置。 - 請求項1〜5のうちいずれか1つに記載の固体撮像装置において、
前記配線層は2層以上設けられており、
上下方向に隣接する前記配線層間には、前記第1の透明絶縁膜と同じ材料から構成された層間絶縁膜が形成されていることを特徴とする固体撮像装置。 - 請求項1〜6のうちいずれか1つに記載の固体撮像装置において、
前記第1の突起部の屈折率は、前記第2の透明絶縁膜の屈折率に比べて0.3以上0.6以下の範囲で大きいことを特徴とする固体撮像装置。 - 請求項1〜7のうちいずれか1つに記載の固体撮像装置において、
前記第1の透明絶縁膜は酸化シリコン系の材料で構成されており、前記透明保護膜及び前記第1の突起部は、窒化シリコン系の材料で構成されていることを特徴とする固体撮像装置。 - 請求項1〜8のうちいずれか1つに記載の固体撮像装置において、
前記第1の突起部の平面視における形状は、正方形であることを特徴とする固体撮像装置。 - 請求項1〜9のうちいずれか1つに記載の固体撮像装置において、
前記第1の突起部の上面及び側面を覆う反射防止膜をさらに備えていることを特徴とする固体撮像装置。 - 請求項1〜10のうちいずれか1つに記載の固体撮像装置において、
前記透明保護膜の下面のうち、前記複数の受光部のそれぞれの上方に位置する領域の一部には、前記第1の透明絶縁膜内に向かって下方に突出する第2の突起部が形成されていることを特徴とする固体撮像装置。 - 請求項11のうちいずれか1つに記載の固体撮像装置において、
前記第2の突起部は、下方から見て窓枠状に形成されていることを特徴とする固体撮像装置。 - 請求項11または12に記載の固体撮像装置において、
前記第2の突起部の深さは、60nm以上100nm以下であることを特徴とする固体撮像装置。 - 請求項1〜13のうちいずれか1つに記載の固体撮像装置において、
前記メモリー部の上に形成され、前記複数の受光部の各々で生成された電荷を前記メモリー部へと転送させるゲート部と、
前記ゲート部と前記配線層との間に配置され、前記複数の受光部のそれぞれの上方領域に開口部が形成された遮光膜と、
前記第2の透明絶縁膜のうち、前記第1の突起部の上方に位置する領域上にそれぞれ設けられたオンチップレンズをさらに備えていることを特徴とする固体撮像装置。
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Application Number | Priority Date | Filing Date | Title |
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US10957727B2 (en) * | 2018-09-26 | 2021-03-23 | Semiconductor Components Industries, Llc | Phase detection pixels with diffractive lenses |
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JP2022020502A (ja) * | 2020-07-20 | 2022-02-01 | ソニーセミコンダクタソリューションズ株式会社 | 光検出装置、及びカメラシステム |
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EP3410484A1 (en) | 2018-12-05 |
KR20180107145A (ko) | 2018-10-01 |
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EP3410484A4 (en) | 2019-05-22 |
US20180331148A1 (en) | 2018-11-15 |
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WO2017131009A1 (ja) | 2017-08-03 |
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