JPWO2017056888A1 - パターン形成方法、及び、感活性光線性又は感放射線性樹脂組成物 - Google Patents

パターン形成方法、及び、感活性光線性又は感放射線性樹脂組成物 Download PDF

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Publication number
JPWO2017056888A1
JPWO2017056888A1 JP2017543057A JP2017543057A JPWO2017056888A1 JP WO2017056888 A1 JPWO2017056888 A1 JP WO2017056888A1 JP 2017543057 A JP2017543057 A JP 2017543057A JP 2017543057 A JP2017543057 A JP 2017543057A JP WO2017056888 A1 JPWO2017056888 A1 JP WO2017056888A1
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group
compound
sensitive
radiation
acid
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Japanese (ja)
Inventor
大輔 浅川
大輔 浅川
研由 後藤
研由 後藤
直也 畠山
直也 畠山
三千紘 白川
三千紘 白川
惠瑜 王
惠瑜 王
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Fujifilm Corp
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Fujifilm Corp
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Publication of JPWO2017056888A1 publication Critical patent/JPWO2017056888A1/ja
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    • CCHEMISTRY; METALLURGY
    • C07ORGANIC CHEMISTRY
    • C07FACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F7/00Compounds containing elements of Groups 4 or 14 of the Periodic Table
    • C07F7/02Silicon compounds
    • C07F7/21Cyclic compounds having at least one ring containing silicon, but no carbon in the ring
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/038Macromolecular compounds which are rendered insoluble or differentially wettable
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/039Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/075Silicon-containing compounds
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20Exposure; Apparatus therefor

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Materials For Photolithography (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
JP2017543057A 2015-09-30 2016-09-07 パターン形成方法、及び、感活性光線性又は感放射線性樹脂組成物 Pending JPWO2017056888A1 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2015195206 2015-09-30
JP2015195206 2015-09-30
PCT/JP2016/076282 WO2017056888A1 (ja) 2015-09-30 2016-09-07 パターン形成方法、及び、感活性光線性又は感放射線性樹脂組成物

Publications (1)

Publication Number Publication Date
JPWO2017056888A1 true JPWO2017056888A1 (ja) 2018-08-09

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JP2017543057A Pending JPWO2017056888A1 (ja) 2015-09-30 2016-09-07 パターン形成方法、及び、感活性光線性又は感放射線性樹脂組成物

Country Status (3)

Country Link
JP (1) JPWO2017056888A1 (zh)
TW (1) TW201716861A (zh)
WO (1) WO2017056888A1 (zh)

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004212983A (ja) * 2003-01-08 2004-07-29 Internatl Business Mach Corp <Ibm> パターナブル低誘電率材料およびulsi相互接続でのその使用
JP2006307180A (ja) * 2005-04-01 2006-11-09 Shin Etsu Chem Co Ltd シルセスキオキサン系化合物混合物、その製造方法及びそれを用いたレジスト組成物並びにパターン形成方法
JP2007298841A (ja) * 2006-05-01 2007-11-15 Tohoku Univ 感光性重合体組成物
JP2009215423A (ja) * 2008-03-10 2009-09-24 Chisso Corp かご型シルセスキオキサン構造を含む重合体とそれを含むネガ型レジスト材料
JP2010043030A (ja) * 2008-08-13 2010-02-25 Az Electronic Materials Kk アルカリ可溶性シルセスキオキサン及び感光性組成物
JP2011128239A (ja) * 2009-12-16 2011-06-30 Jsr Corp 着色組成物、カラーフィルタおよびカラー液晶表示素子
JP2011141494A (ja) * 2010-01-08 2011-07-21 Fujifilm Corp パターン形成方法、化学増幅型レジスト組成物及びレジスト膜
JP2012053243A (ja) * 2010-08-31 2012-03-15 Fujifilm Corp 感光性組成物、パターン形成材料、並びに、これを用いた感光性膜、パターン形成方法、パターン膜、反射防止膜、絶縁膜、光学デバイス及び電子デバイス
JP2012128383A (ja) * 2010-03-30 2012-07-05 Fujifilm Corp 感活性光線性又は感放射線性樹脂組成物及びそれを用いたパターン形成方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5045314B2 (ja) * 2007-08-30 2012-10-10 富士通株式会社 液浸露光用レジスト組成物、及びそれを用いた半導体装置の製造方法
JP5827058B2 (ja) * 2011-07-29 2015-12-02 Jsr株式会社 シルセスキオキサン化合物の製造方法
US8999625B2 (en) * 2013-02-14 2015-04-07 International Business Machines Corporation Silicon-containing antireflective coatings including non-polymeric silsesquioxanes

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004212983A (ja) * 2003-01-08 2004-07-29 Internatl Business Mach Corp <Ibm> パターナブル低誘電率材料およびulsi相互接続でのその使用
JP2006307180A (ja) * 2005-04-01 2006-11-09 Shin Etsu Chem Co Ltd シルセスキオキサン系化合物混合物、その製造方法及びそれを用いたレジスト組成物並びにパターン形成方法
JP2007298841A (ja) * 2006-05-01 2007-11-15 Tohoku Univ 感光性重合体組成物
JP2009215423A (ja) * 2008-03-10 2009-09-24 Chisso Corp かご型シルセスキオキサン構造を含む重合体とそれを含むネガ型レジスト材料
JP2010043030A (ja) * 2008-08-13 2010-02-25 Az Electronic Materials Kk アルカリ可溶性シルセスキオキサン及び感光性組成物
JP2011128239A (ja) * 2009-12-16 2011-06-30 Jsr Corp 着色組成物、カラーフィルタおよびカラー液晶表示素子
JP2011141494A (ja) * 2010-01-08 2011-07-21 Fujifilm Corp パターン形成方法、化学増幅型レジスト組成物及びレジスト膜
JP2012128383A (ja) * 2010-03-30 2012-07-05 Fujifilm Corp 感活性光線性又は感放射線性樹脂組成物及びそれを用いたパターン形成方法
JP2012053243A (ja) * 2010-08-31 2012-03-15 Fujifilm Corp 感光性組成物、パターン形成材料、並びに、これを用いた感光性膜、パターン形成方法、パターン膜、反射防止膜、絶縁膜、光学デバイス及び電子デバイス

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WO2017056888A1 (ja) 2017-04-06
TW201716861A (zh) 2017-05-16

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