JPWO2016203594A1 - 金属酸化膜の成膜方法 - Google Patents
金属酸化膜の成膜方法 Download PDFInfo
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- 238000000034 method Methods 0.000 title claims abstract description 67
- 229910044991 metal oxide Inorganic materials 0.000 title claims abstract description 53
- 150000004706 metal oxides Chemical class 0.000 title claims abstract description 53
- 239000003595 mist Substances 0.000 claims abstract description 248
- 238000006243 chemical reaction Methods 0.000 claims abstract description 106
- 239000002994 raw material Substances 0.000 claims abstract description 93
- 239000003795 chemical substances by application Substances 0.000 claims abstract description 67
- 229910052751 metal Inorganic materials 0.000 claims abstract description 18
- 239000002184 metal Substances 0.000 claims abstract description 18
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims abstract description 17
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 9
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 8
- 239000000758 substrate Substances 0.000 claims description 71
- 238000002156 mixing Methods 0.000 claims description 30
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 6
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 4
- 238000010438 heat treatment Methods 0.000 claims description 4
- 229910021529 ammonia Inorganic materials 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 abstract description 16
- 230000008569 process Effects 0.000 abstract description 2
- 239000010408 film Substances 0.000 description 172
- 239000000243 solution Substances 0.000 description 144
- 238000002161 passivation Methods 0.000 description 71
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 66
- 229910052710 silicon Inorganic materials 0.000 description 66
- 239000010703 silicon Substances 0.000 description 66
- 230000015572 biosynthetic process Effects 0.000 description 20
- 230000002093 peripheral effect Effects 0.000 description 16
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 10
- 230000000694 effects Effects 0.000 description 7
- 239000000463 material Substances 0.000 description 6
- 239000007788 liquid Substances 0.000 description 5
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 4
- 235000011114 ammonium hydroxide Nutrition 0.000 description 4
- 238000000605 extraction Methods 0.000 description 4
- 230000001737 promoting effect Effects 0.000 description 4
- 239000012298 atmosphere Substances 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 238000000354 decomposition reaction Methods 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000011259 mixed solution Substances 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 230000035484 reaction time Effects 0.000 description 2
- 239000007921 spray Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- -1 alkoxide compound Chemical class 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 150000004696 coordination complex Chemical class 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000001687 destabilization Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000003980 solgel method Methods 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
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Abstract
Description
図6は、本実施の形態(実施の形態1,実施の形態2)である金属酸化膜の製造方法を用いて製造される太陽電池構造を示す断面図である。
図1は、この発明の実施の形態1である、裏面パッシベーション膜5(金属酸化膜)の成膜方法を実現するための成膜装置の概略構成を示す説明図である。
次に、実施の形態1の裏面パッシベーション膜5(酸化アルミニウム膜)の成膜方法について説明する。
上述した実施の形態1は、原料溶液14と反応支援溶液24とを別々の溶液容器15及び溶液容器25内でミスト化させ、発生したそれぞれの原料溶液ミストM1及び支援剤ミストM2を、反応容器11内に設けられたノズル12へ異なる経路L1及びL2を介して供給し、ノズル12内にて混合ミストM3を得た後に裏面パッシベーション膜5の成膜を行う方法である。
図4は、この発明の実施の形態2である、裏面パッシベーション膜5の成膜方法を実現するための成膜装置の概略構成を示す説明図である。以下、図1及び図2で示した実施の形態1の成膜装置101と同様な構成の説明を適宜省略して、実施の形態1と異なる構成を中心に説明する。
次に、実施の形態2である、裏面パッシベーション膜5(酸化アルミニウム膜)の成膜方法について説明する。なお、実施の形態1と同じ内容については適宜説明を省略する。
図5は図4で示した混合容器8の構造の詳細を示す説明図であり、図5(a) が上面図であり、図5(b) が図5(a) のA−A断面を示す断面図である。図5(a) ,(b) それぞれにXYZ直交座標系を示している。
なお、上述した実施の形態では、基板の一方主面上に形成する金属酸化膜の成膜方法として、太陽電池の製造方法におけるP型シリコン基板4の裏面上に裏面パッシベーション膜5を製造する例を示したが、上述した例に限定されないことは勿論である。例えば、P型シリコン基板4以外の基板としてガラス基板のような絶縁性基板を用いてもよく、パッシベーション膜以外の目的で金属酸化膜を形成してもよい。すなわち、本願発明は、ミスト法を用いて基板の一方主面上に金属酸化膜を成膜する金属酸化膜の成膜方法全般に適用可能であり、酸化アルミニウム膜等の金蔵酸化膜そのものの性能向上効果を奏している。
5 裏面パッシベーション膜
8 混合容器
11 反応容器
12 ノズル
13 加熱器
14 原料溶液
15,25 溶液容器
16,26 ミスト化器
24 反応支援溶液
80 容器本体
81,82 ミスト供給部
83 ミスト取り出し部
101,102 成膜装置
L1〜L3 経路
R80 外周経路
Claims (5)
- (a) 第1の容器(15)内において、金属元素を含む原料溶液(14)をミスト化させて原料溶液ミスト(M1)を得るステップと、
(b) 前記第1の容器と独立した第2の容器(25)内において、前記金属元素用の反応支援剤を含む反応支援溶液(24)をミスト化させて支援剤ミスト(M2)を得るステップと、
(c) 互いに独立した第1及び第2の経路(L1,L2)を介して得られる前記原料溶液ミスト及び前記支援剤ミストを反応容器内に供給しつつ、前記反応容器(11)内に載置した基板(4)を加熱して、前記基板の一方主面上に前記金属元素を含む金属酸化膜を成膜するステップとを備える、
金属酸化膜の成膜方法。 - 請求項1記載の金属酸化膜の成膜方法であって、
前記反応容器は内部にノズルを有し、
前記ステップ(c) は、
(c-1) 前記第1及び第2の経路を介して前記ノズルに前記原料溶液ミスト及び前記支援剤ミストを供給するステップと、
(c-2) 前記ノズル内で前記原料溶液ミストと前記支援剤ミストとを混合して混合ミスト
(M3)を得るステップと、
(c-3) 前記基板の一方主面上に、前記混合ミストを供給するステップとを含む、
金属酸化膜の成膜方法。 - 請求項1または請求項2記載の金属酸化膜の成膜方法であって、
前記金属元素はアルミニウムである、
金属酸化膜の成膜方法。 - 請求項3記載の金属酸化膜の成膜方法であって、
前記反応支援溶液は、アンモニア及び塩酸のうち一方を含む溶液である、
金属酸化膜の成膜方法。 - 請求項3または請求項4記載の金属酸化膜の成膜方法であって、
前記金属酸化膜は、酸化アルミニウム膜である、
金属酸化膜の成膜方法。
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