JPWO2016153028A1 - コンデンサ内蔵基板およびインターポーザ並びに実装基板 - Google Patents
コンデンサ内蔵基板およびインターポーザ並びに実装基板 Download PDFInfo
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- JPWO2016153028A1 JPWO2016153028A1 JP2017508460A JP2017508460A JPWO2016153028A1 JP WO2016153028 A1 JPWO2016153028 A1 JP WO2016153028A1 JP 2017508460 A JP2017508460 A JP 2017508460A JP 2017508460 A JP2017508460 A JP 2017508460A JP WO2016153028 A1 JPWO2016153028 A1 JP WO2016153028A1
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- 239000003990 capacitor Substances 0.000 title claims abstract description 77
- 239000000758 substrate Substances 0.000 title claims abstract description 46
- 239000004065 semiconductor Substances 0.000 claims abstract description 35
- 239000000919 ceramic Substances 0.000 claims abstract description 31
- 239000004020 conductor Substances 0.000 claims description 22
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 8
- 239000010936 titanium Substances 0.000 claims description 6
- 229910052751 metal Inorganic materials 0.000 claims description 5
- 229910052749 magnesium Inorganic materials 0.000 claims description 4
- 229910052715 tantalum Inorganic materials 0.000 claims description 4
- 239000013078 crystal Substances 0.000 claims description 3
- 239000002184 metal Substances 0.000 claims description 3
- 229910052759 nickel Inorganic materials 0.000 claims description 3
- 229910052758 niobium Inorganic materials 0.000 claims description 3
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims description 3
- 239000011347 resin Substances 0.000 description 9
- 229920005989 resin Polymers 0.000 description 9
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 5
- 239000011889 copper foil Substances 0.000 description 5
- 239000011777 magnesium Substances 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 229910052573 porcelain Inorganic materials 0.000 description 5
- 229910000679 solder Inorganic materials 0.000 description 4
- 238000005452 bending Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- ZLNQQNXFFQJAID-UHFFFAOYSA-L magnesium carbonate Chemical compound [Mg+2].[O-]C([O-])=O ZLNQQNXFFQJAID-UHFFFAOYSA-L 0.000 description 1
- 229910000021 magnesium carbonate Inorganic materials 0.000 description 1
- 239000001095 magnesium carbonate Substances 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- PBCFLUZVCVVTBY-UHFFFAOYSA-N tantalum pentoxide Inorganic materials O=[Ta](=O)O[Ta](=O)=O PBCFLUZVCVVTBY-UHFFFAOYSA-N 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G2/00—Details of capacitors not covered by a single one of groups H01G4/00-H01G11/00
- H01G2/02—Mountings
- H01G2/06—Mountings specially adapted for mounting on a printed-circuit support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/018—Dielectrics
- H01G4/06—Solid dielectrics
- H01G4/08—Inorganic dielectrics
- H01G4/12—Ceramic dielectrics
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/30—Stacked capacitors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/12—Mountings, e.g. non-detachable insulating substrates
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/16—Printed circuits incorporating printed electric components, e.g. printed resistor, capacitor, inductor
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/46—Manufacturing multilayer circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/153—Connection portion
- H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
- H01L2924/15311—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Inorganic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Production Of Multi-Layered Print Wiring Board (AREA)
- Ceramic Capacitors (AREA)
- Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
Abstract
Description
13 インターポーザ
14 基板
15 半導体素子
20 スルーホール導体
21 コンデンサ
21a 誘電体磁器板
21b 電極
21c 端子電極
23 ビアホール導体
25 半導体素子の搭載領域
Claims (12)
- 基板内にコンデンサを内蔵しているとともに、
該コンデンサが、厚さ15μm以下の誘電体磁器板と、該誘電体磁器板を挟持する電極とを具備している、コンデンサ内蔵基板。 - 前記コンデンサは、前記誘電体磁器板と前記電極とが交互に積層された積層コンデンサである、請求項1に記載のコンデンサ内蔵基板。
- 前記誘電体磁器板の面積が4mm2以上である、請求項1または2に記載のコンデンサ内蔵基板。
- 前記誘電体磁器板の比誘電率が、1000以上である、請求項1乃至3のうちのいずれかに記載のコンデンサ内蔵基板。
- 前記基板の厚さが、1mm以下である、請求項1乃至4のうちのいずれかに記載のコンデンサ内蔵基板。
- 前記誘電体磁器板が、酸化チタンを主成分とし、ルチル型の結晶構造を有するとともに、
2価の元素、3価の元素、4価の元素および5価の元素のうち少なくともいずれかを含む、請求項1乃至5のうちいずれかに記載のコンデンサ内蔵基板。 - 前記誘電体磁器板が、MgおよびNiのうち少なくともいずれか一種である金属元素M1と、NbおよびTaのうち少なくともいずれか一種である金属元素M2と、を含み、
Ti、M1およびM2の総量に対して、M1のモル比率が0.005〜0.025、M2のモル比率が0.01〜0.050である、請求項6に記載のコンデンサ内蔵基板。 - 請求項1乃至7のうちのいずれかに記載のコンデンサ内蔵基板からなるとともに、1個の前記コンデンサを内蔵する、インターポーザ。
- 半導体素子の搭載領域を有し、平面視したときに、前記搭載領域の直下に前記コンデンサが位置するとともに、前記搭載領域の内側に前記コンデンサが位置する、請求項8に記載のインターポーザ。
- 前記半導体素子の搭載領域内に、厚さ方向に延び前記コンデンサの電極と接続される柱状導体が形成され、前記搭載領域の内側であって前記コンデンサの外側に、厚さ方向に延び上下面に引き出される柱状導体が形成されている、請求項9に記載のインターポーザ。
- 配線基板に、請求項8乃至10のうちのいずれかに記載のインターポーザが実装され、このインターポーザに半導体素子が実装されてなる、実装基板。
- 平面視したときに、前記半導体素子の直下で前記半導体素子と前記コンデンサの電極とが電気的に接続されるとともに、前記半導体素子と前記配線基板とが、前記半導体素子の直下で、かつ前記コンデンサの外側に位置する前記インターポーザ内を介して電気的に接続されている、請求項11に記載の実装基板。
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JP2015064644 | 2015-03-26 | ||
JP2015064644 | 2015-03-26 | ||
PCT/JP2016/059590 WO2016153028A1 (ja) | 2015-03-26 | 2016-03-25 | コンデンサ内蔵基板およびインターポーザ並びに実装基板 |
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JPWO2016153028A1 true JPWO2016153028A1 (ja) | 2018-02-08 |
JP6585707B2 JP6585707B2 (ja) | 2019-10-02 |
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Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004304159A (ja) * | 2003-03-19 | 2004-10-28 | Ngk Spark Plug Co Ltd | 中継基板、半導体素子付き中継基板、中継基板付き基板、半導体素子と中継基板と基板とからなる構造体 |
JP2008160144A (ja) * | 2008-01-30 | 2008-07-10 | Kyocera Corp | 電気素子内蔵配線基板 |
JP2010087499A (ja) * | 2008-09-30 | 2010-04-15 | Ibiden Co Ltd | コンデンサ装置の製造方法 |
JP2012004544A (ja) * | 2010-05-19 | 2012-01-05 | Murata Mfg Co Ltd | セラミック電子部品の製造方法 |
JP2012166976A (ja) * | 2011-02-14 | 2012-09-06 | Tdk Corp | 誘電体磁器組成物およびセラミック電子部品 |
JP2014531389A (ja) * | 2011-09-16 | 2014-11-27 | ジ オーストラリアン ナショナル ユニバーシティ | 巨大誘電率材料 |
Family Cites Families (1)
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CN106458764A (zh) * | 2014-07-03 | 2017-02-22 | 京瓷株式会社 | 电介质材料以及电子部件 |
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- 2016-03-25 JP JP2017508460A patent/JP6585707B2/ja active Active
- 2016-03-25 WO PCT/JP2016/059590 patent/WO2016153028A1/ja active Application Filing
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004304159A (ja) * | 2003-03-19 | 2004-10-28 | Ngk Spark Plug Co Ltd | 中継基板、半導体素子付き中継基板、中継基板付き基板、半導体素子と中継基板と基板とからなる構造体 |
JP2008160144A (ja) * | 2008-01-30 | 2008-07-10 | Kyocera Corp | 電気素子内蔵配線基板 |
JP2010087499A (ja) * | 2008-09-30 | 2010-04-15 | Ibiden Co Ltd | コンデンサ装置の製造方法 |
JP2012004544A (ja) * | 2010-05-19 | 2012-01-05 | Murata Mfg Co Ltd | セラミック電子部品の製造方法 |
JP2012166976A (ja) * | 2011-02-14 | 2012-09-06 | Tdk Corp | 誘電体磁器組成物およびセラミック電子部品 |
JP2014531389A (ja) * | 2011-09-16 | 2014-11-27 | ジ オーストラリアン ナショナル ユニバーシティ | 巨大誘電率材料 |
Non-Patent Citations (1)
Title |
---|
J.ANDRADE ET AL: "Rutile solid solutions containing M+(Li), M2+(Zn, Mg),M3+(Al) and M5+(Nb, Ta, Sb) ions", JOURNAL OF MATERIALS SCIENCE LETTERS, vol. Volume 5, Issue 2, ISSN 0261-8028, JPN6018030717, 1986, DE, pages 147 - 149, ISSN: 0003999819 * |
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WO2016153028A1 (ja) | 2016-09-29 |
JP6585707B2 (ja) | 2019-10-02 |
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