JPWO2016140321A1 - 膜厚監視装置用センサ、それを備えた膜厚監視装置、および膜厚監視装置用センサの製造方法 - Google Patents
膜厚監視装置用センサ、それを備えた膜厚監視装置、および膜厚監視装置用センサの製造方法 Download PDFInfo
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- JPWO2016140321A1 JPWO2016140321A1 JP2016540712A JP2016540712A JPWO2016140321A1 JP WO2016140321 A1 JPWO2016140321 A1 JP WO2016140321A1 JP 2016540712 A JP2016540712 A JP 2016540712A JP 2016540712 A JP2016540712 A JP 2016540712A JP WO2016140321 A1 JPWO2016140321 A1 JP WO2016140321A1
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- Prior art keywords
- film thickness
- crystal resonator
- frequency
- axis
- thickness monitoring
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000012806 monitoring device Methods 0.000 title claims abstract description 47
- 238000000034 method Methods 0.000 title claims description 28
- 238000004519 manufacturing process Methods 0.000 title claims description 13
- 239000013078 crystal Substances 0.000 claims abstract description 201
- 238000001816 cooling Methods 0.000 claims abstract description 20
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 13
- 239000010453 quartz Substances 0.000 claims abstract description 11
- 230000035939 shock Effects 0.000 claims description 37
- 238000012544 monitoring process Methods 0.000 claims description 30
- 230000014509 gene expression Effects 0.000 claims description 6
- 238000005259 measurement Methods 0.000 abstract description 21
- 230000015572 biosynthetic process Effects 0.000 abstract description 10
- 239000010408 film Substances 0.000 description 135
- 239000010409 thin film Substances 0.000 description 37
- 230000010355 oscillation Effects 0.000 description 19
- 238000001704 evaporation Methods 0.000 description 13
- 230000008020 evaporation Effects 0.000 description 12
- 238000004544 sputter deposition Methods 0.000 description 11
- 238000000151 deposition Methods 0.000 description 9
- 230000008021 deposition Effects 0.000 description 9
- 235000012239 silicon dioxide Nutrition 0.000 description 9
- 238000007740 vapor deposition Methods 0.000 description 7
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 7
- 238000005229 chemical vapour deposition Methods 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 238000007738 vacuum evaporation Methods 0.000 description 5
- 238000012937 correction Methods 0.000 description 4
- 230000007423 decrease Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- 239000000498 cooling water Substances 0.000 description 3
- 229910052736 halogen Inorganic materials 0.000 description 3
- 150000002367 halogens Chemical class 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 238000001771 vacuum deposition Methods 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 238000003380 quartz crystal microbalance Methods 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 238000009825 accumulation Methods 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B21/00—Measuring arrangements or details thereof, where the measuring technique is not covered by the other groups of this subclass, unspecified or not relevant
- G01B21/02—Measuring arrangements or details thereof, where the measuring technique is not covered by the other groups of this subclass, unspecified or not relevant for measuring length, width, or thickness
- G01B21/08—Measuring arrangements or details thereof, where the measuring technique is not covered by the other groups of this subclass, unspecified or not relevant for measuring length, width, or thickness for measuring thickness
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N5/00—Analysing materials by weighing, e.g. weighing small particles separated from a gas or liquid
- G01N5/02—Analysing materials by weighing, e.g. weighing small particles separated from a gas or liquid by absorbing or adsorbing components of a material and determining change of weight of the adsorbent, e.g. determining moisture content
Landscapes
- Chemical & Material Sciences (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Mechanical Engineering (AREA)
- Life Sciences & Earth Sciences (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Health & Medical Sciences (AREA)
- Materials Engineering (AREA)
- Analytical Chemistry (AREA)
- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Length Measuring Devices Characterised By Use Of Acoustic Means (AREA)
- Physical Vapour Deposition (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2015041065 | 2015-03-03 | ||
JP2015041065 | 2015-03-03 | ||
PCT/JP2016/056647 WO2016140321A1 (ja) | 2015-03-03 | 2016-03-03 | 膜厚監視装置用センサ、それを備えた膜厚監視装置、および膜厚監視装置用センサの製造方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
JPWO2016140321A1 true JPWO2016140321A1 (ja) | 2017-04-27 |
Family
ID=56848944
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2016540712A Pending JPWO2016140321A1 (ja) | 2015-03-03 | 2016-03-03 | 膜厚監視装置用センサ、それを備えた膜厚監視装置、および膜厚監視装置用センサの製造方法 |
Country Status (5)
Country | Link |
---|---|
JP (1) | JPWO2016140321A1 (ko) |
KR (1) | KR20160124170A (ko) |
CN (1) | CN106104251A (ko) |
SG (1) | SG11201607500PA (ko) |
WO (1) | WO2016140321A1 (ko) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6873638B2 (ja) * | 2016-09-23 | 2021-05-19 | 太陽誘電株式会社 | ガスセンサ及びガス検出方法 |
JP7064407B2 (ja) * | 2018-08-31 | 2022-05-10 | キヤノントッキ株式会社 | 成膜装置及び成膜装置の制御方法 |
JP7503481B2 (ja) | 2020-11-17 | 2024-06-20 | 株式会社アルバック | 膜厚モニタ |
CN112458407B (zh) * | 2020-11-27 | 2023-06-02 | 江苏集萃有机光电技术研究所有限公司 | 一种晶振测量系统及测量方法和装置 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4375604A (en) * | 1981-02-27 | 1983-03-01 | The United States Of America As Represented By The Secretary Of The Army | Method of angle correcting doubly rotated crystal resonators |
JPH03218411A (ja) * | 1990-01-24 | 1991-09-26 | Nippon Dempa Kogyo Co Ltd | モニタ用水晶振動子及びこれを用いた膜厚制御装置 |
US6147437A (en) * | 1999-08-11 | 2000-11-14 | Schlumberger Technology Corporation | Pressure and temperature transducer |
JP2006292733A (ja) * | 2005-03-15 | 2006-10-26 | Yoshinori Kanno | 水晶マイクロバランスセンサー装置 |
JP2012127711A (ja) * | 2010-12-14 | 2012-07-05 | Ulvac Japan Ltd | 真空蒸着装置及び薄膜の製造方法 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5321496A (en) * | 1990-03-14 | 1994-06-14 | Zellweger Uster, Inc. | Apparatus for monitoring trash in a fiber sample |
JP2003218411A (ja) * | 2002-01-21 | 2003-07-31 | Matsushita Electric Ind Co Ltd | 熱電変換材料、その製造方法および薄膜熱電変換素子 |
JP4388443B2 (ja) | 2004-09-09 | 2009-12-24 | 株式会社アルバック | 膜厚監視方法および膜厚監視装置 |
US7828929B2 (en) * | 2004-12-30 | 2010-11-09 | Research Electro-Optics, Inc. | Methods and devices for monitoring and controlling thin film processing |
CN202913055U (zh) * | 2012-10-31 | 2013-05-01 | 上海膜林科技有限公司 | 分立式晶控膜厚控制装置 |
CN102888591A (zh) * | 2012-10-31 | 2013-01-23 | 上海膜林科技有限公司 | 分立式晶控膜厚控制装置 |
CN103540906B (zh) * | 2013-09-29 | 2015-07-29 | 中国科学院上海光学精密机械研究所 | 光控-晶控综合膜厚监控方法 |
-
2016
- 2016-03-03 WO PCT/JP2016/056647 patent/WO2016140321A1/ja active Application Filing
- 2016-03-03 CN CN201680000656.0A patent/CN106104251A/zh active Pending
- 2016-03-03 KR KR1020167025509A patent/KR20160124170A/ko not_active Application Discontinuation
- 2016-03-03 SG SG11201607500PA patent/SG11201607500PA/en unknown
- 2016-03-03 JP JP2016540712A patent/JPWO2016140321A1/ja active Pending
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4375604A (en) * | 1981-02-27 | 1983-03-01 | The United States Of America As Represented By The Secretary Of The Army | Method of angle correcting doubly rotated crystal resonators |
JPH03218411A (ja) * | 1990-01-24 | 1991-09-26 | Nippon Dempa Kogyo Co Ltd | モニタ用水晶振動子及びこれを用いた膜厚制御装置 |
US6147437A (en) * | 1999-08-11 | 2000-11-14 | Schlumberger Technology Corporation | Pressure and temperature transducer |
JP2006292733A (ja) * | 2005-03-15 | 2006-10-26 | Yoshinori Kanno | 水晶マイクロバランスセンサー装置 |
JP2012127711A (ja) * | 2010-12-14 | 2012-07-05 | Ulvac Japan Ltd | 真空蒸着装置及び薄膜の製造方法 |
Also Published As
Publication number | Publication date |
---|---|
KR20160124170A (ko) | 2016-10-26 |
WO2016140321A1 (ja) | 2016-09-09 |
CN106104251A (zh) | 2016-11-09 |
SG11201607500PA (en) | 2016-10-28 |
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