JPWO2016140008A1 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 84
- 239000004020 conductor Substances 0.000 claims abstract description 109
- 239000000758 substrate Substances 0.000 claims description 33
- 238000013459 approach Methods 0.000 claims description 4
- 230000006698 induction Effects 0.000 description 7
- 238000000034 method Methods 0.000 description 5
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 230000006378 damage Effects 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052774 Proactinium Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 229910052745 lead Inorganic materials 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
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Abstract
Description
特許文献1 特開平9−172139号公報
特許文献2 特開2002−353407号公報
(項目1)
半導体装置は、第1領域の1以上の第1デバイスを備えてよい。
半導体装置は、第2領域の1以上の第2デバイスを備えてよい。
半導体装置は、第1デバイスおよび第2デバイスを電気的に接続する接続導体を備え手よい。
接続導体は、当該接続導体に含まれる互いに逆向きの電流経路同士が少なくとも一部において隣接してよい。
(項目2)
接続導体は、第1デバイスから第2デバイスへと電流を流してよい。
接続導体は、少なくとも一部において第2デバイスから第1デバイスへと向かう方向に電流を流してよい。
(項目3)
接続導体は、第2デバイスから第1デバイスへと電流を流してよい。
接続導体は、少なくとも一部において第1デバイスから第2デバイスへと向かう方向に電流を流してよい。
(項目4)
接続導体は、第1デバイス側において第2デバイスから離れる方向に向く第1電流経路を有してよい。
接続導体は、第1電流経路から折り返して第2デバイスへと近づく方向に向く第2電流経路を有してよい。
(項目5)
接続導体は、第2デバイス側において第1デバイスから離れる方向に向く第3電流経路を有してよい。
接続導体は、第3電流経路から折り返して第1デバイスへと近づく方向に向く第4電流経路を有してよい。
(項目6)
接続導体は、互いに隣接する電流経路同士で平行平板構造が形成されてよい。
(項目7)
半導体装置は、第1領域に複数の第1デバイスを備えてよい。
接続導体は、複数の第1デバイスをそれぞれ並列に接続してよい。
(項目8)
半導体装置は、第2領域に複数の第2デバイスを備えてよい。
接続導体は、複数の第2デバイスをそれぞれ並列に接続してよい。
(項目9)
接続導体は、第1電流経路と、第2電流経路と、第3電流経路と、第4電流経路と、を含むメイン導体部を備えてよい。
接続導体は、第1電流経路と複数の第1デバイスのそれぞれとの間を接続する複数の第1接続部を備えてよい。
接続導体は、第3電流経路と複数の第2デバイスのそれぞれとの間を接続する複数の第2接続部を備えてよい。
(項目10)
半導体装置は、第1領域に複数の第1デバイスを備えてよい。
半導体装置は、第2領域に複数の第2デバイスを備えてよい。
複数の第1デバイスおよび複数の第2デバイスは、第1領域から第2領域に向かう方向に配列されてよい。
(項目11)
接続導体は、外部と接続され、外部と電流を授受する端子部を更に有してよい。
(項目12)
半導体装置は、基板をさらに備えてよい。
半導体装置は、基板に第1領域および第2領域が設けられてよい。
(項目13)
基板は絶縁基板でよい。
(項目14)
第1デバイスおよび第2デバイスは、絶縁ゲートバイポーラトランジスタまたはパワーMOSFETでよい。
なお、上記の発明の概要は、本発明の必要な特徴の全てを列挙したものではない。また、これらの特徴群のサブコンビネーションもまた、発明となりうる。
また、半導体装置10においては、外部から接続導体230を経由して(即ち、端子Mから)電流が入力され、接続導体250を経由して(即ち、端子Nから)外部へと電流が出力される場合もある。この場合、接続導体230は、第2領域104において、接続導体250と平行平板構造であることから、接続導体230および接続導体250をそれぞれ流れる電流は、互いに逆向きの電流経路同士となる。このため、半導体装置10において、インダクタンスおよび誘導磁場の発生を低減させることができる。
Claims (14)
- 第1領域の1以上の第1デバイスと、
第2領域の1以上の第2デバイスと、
前記第1デバイスおよび前記第2デバイスを電気的に接続する接続導体と、
を備え、
前記接続導体は、当該接続導体に含まれる互いに逆向きの電流経路同士が少なくとも一部において隣接する
半導体装置。 - 前記接続導体は、前記第1デバイスから前記第2デバイスへと電流を流し、少なくとも一部において前記第2デバイスから前記第1デバイスへと向かう方向に電流を流す請求項1に記載の半導体装置。
- 前記接続導体は、前記第2デバイスから前記第1デバイスへと電流を流し、少なくとも一部において前記第1デバイスから前記第2デバイスへと向かう方向に電流を流す請求項1に記載の半導体装置。
- 前記接続導体は、前記第1デバイス側において前記第2デバイスから離れる方向に向く第1電流経路と、前記第1電流経路から折り返して前記第2デバイスへと近づく方向に向く第2電流経路と、を有する請求項1から3のいずれか一項に記載の半導体装置。
- 前記接続導体は、前記第2デバイス側において前記第1デバイスから離れる方向に向く第3電流経路と、前記第3電流経路から折り返して前記第1デバイスへと近づく方向に向く第4電流経路と、を有する請求項4に記載の半導体装置。
- 前記接続導体は、互いに隣接する前記電流経路同士で平行平板構造が形成される請求項1から5のいずれか一項に記載の半導体装置。
- 前記第1領域に複数の前記第1デバイスを備え、
前記接続導体は、複数の前記第1デバイスをそれぞれ並列に接続する
請求項1から6のいずれか一項に記載の半導体装置。 - 前記第2領域に複数の前記第2デバイスを備え、
前記接続導体は、複数の前記第2デバイスをそれぞれ並列に接続する
請求項1から7のいずれか一項に記載の半導体装置。 - 前記接続導体は、
前記第1電流経路と、前記第2電流経路と、前記第3電流経路と、前記第4電流経路と、を含むメイン導体部と、
前記第1電流経路と複数の前記第1デバイスのそれぞれとの間を接続する複数の第1接続部と、
前記第3電流経路と複数の前記第2デバイスのそれぞれとの間を接続する複数の第2接続部と、
を備える
請求項5に記載の半導体装置。 - 前記第1領域に複数の前記第1デバイスを備え、
前記第2領域に複数の前記第2デバイスを備え、
複数の前記第1デバイスおよび複数の前記第2デバイスは、前記第1領域から前記第2領域に向かう方向に配列される
請求項1から9のいずれか一項に記載の半導体装置。 - 前記接続導体は、外部と接続され、外部と電流を授受する端子部を更に有する請求項1から10のいずれか一項に記載の半導体装置。
- 基板をさらに備え、
前記基板に前記第1領域および前記第2領域が設けられている請求項1から11のいずれか一項に記載の半導体装置。 - 前記基板は絶縁基板である請求項12に記載の半導体装置。
- 前記第1デバイスおよび前記第2デバイスは、絶縁ゲートバイポーラトランジスタまたはパワーMOSFETである請求項1から13のいずれか一項に記載の半導体装置。
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Application Number | Priority Date | Filing Date | Title |
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JP2015043316 | 2015-03-05 | ||
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PCT/JP2016/053236 WO2016140008A1 (ja) | 2015-03-05 | 2016-02-03 | 半導体装置 |
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DE102017106515B4 (de) * | 2017-03-27 | 2024-02-22 | Danfoss Silicon Power Gmbh | 3-Pegel-Leistungsmodul |
EP3748835A1 (en) | 2019-06-06 | 2020-12-09 | Infineon Technologies AG | Power semiconductor module arrangement |
CN116075933A (zh) * | 2020-07-28 | 2023-05-05 | 罗姆股份有限公司 | 半导体装置 |
CN112367760B (zh) * | 2020-10-29 | 2022-06-10 | 科华恒盛股份有限公司 | 过流结构、电容模块和变流装置 |
JP2022108967A (ja) | 2021-01-14 | 2022-07-27 | 富士電機株式会社 | スナバ装置および電力変換装置 |
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JPH08195471A (ja) * | 1995-01-17 | 1996-07-30 | Hitachi Ltd | モジュール型半導体装置 |
JP2002353407A (ja) * | 2001-05-30 | 2002-12-06 | Fuji Electric Co Ltd | 半導体素子の並列接続用導体 |
JP2007266608A (ja) * | 2006-03-29 | 2007-10-11 | Infineon Technologies Ag | 半導体モジュール |
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JP3480771B2 (ja) | 1995-12-20 | 2003-12-22 | 三菱電機株式会社 | 半導体装置 |
JP4603956B2 (ja) * | 2005-08-26 | 2010-12-22 | 日立オートモティブシステムズ株式会社 | 電力変換装置 |
JP4564937B2 (ja) * | 2006-04-27 | 2010-10-20 | 日立オートモティブシステムズ株式会社 | 電気回路装置及び電気回路モジュール並びに電力変換装置 |
CN201478300U (zh) * | 2009-07-30 | 2010-05-19 | 比亚迪股份有限公司 | 功率模块电极结构以及功率模块 |
JP6076865B2 (ja) * | 2013-09-02 | 2017-02-08 | ルネサスエレクトロニクス株式会社 | 電子装置 |
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JPH08195471A (ja) * | 1995-01-17 | 1996-07-30 | Hitachi Ltd | モジュール型半導体装置 |
JP2002353407A (ja) * | 2001-05-30 | 2002-12-06 | Fuji Electric Co Ltd | 半導体素子の並列接続用導体 |
JP2007266608A (ja) * | 2006-03-29 | 2007-10-11 | Infineon Technologies Ag | 半導体モジュール |
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US10121773B2 (en) | 2018-11-06 |
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