JPWO2016088554A1 - 接合用金属酸化物粒子、これを含む焼結接合剤、接合用金属酸化物粒子の製造方法、及び電子部品の接合方法 - Google Patents
接合用金属酸化物粒子、これを含む焼結接合剤、接合用金属酸化物粒子の製造方法、及び電子部品の接合方法 Download PDFInfo
- Publication number
- JPWO2016088554A1 JPWO2016088554A1 JP2016562374A JP2016562374A JPWO2016088554A1 JP WO2016088554 A1 JPWO2016088554 A1 JP WO2016088554A1 JP 2016562374 A JP2016562374 A JP 2016562374A JP 2016562374 A JP2016562374 A JP 2016562374A JP WO2016088554 A1 JPWO2016088554 A1 JP WO2016088554A1
- Authority
- JP
- Japan
- Prior art keywords
- copper
- bonding
- metal oxide
- particles
- joining
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000002245 particle Substances 0.000 title claims abstract description 79
- 239000007767 bonding agent Substances 0.000 title claims abstract description 27
- 238000000034 method Methods 0.000 title claims abstract description 27
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 18
- 229910044991 metal oxide Inorganic materials 0.000 title claims description 15
- 150000004706 metal oxides Chemical class 0.000 title claims description 15
- 239000010949 copper Substances 0.000 claims abstract description 110
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 101
- BERDEBHAJNAUOM-UHFFFAOYSA-N copper(I) oxide Inorganic materials [Cu]O[Cu] BERDEBHAJNAUOM-UHFFFAOYSA-N 0.000 claims abstract description 74
- 229940112669 cuprous oxide Drugs 0.000 claims abstract description 74
- KRFJLUBVMFXRPN-UHFFFAOYSA-N cuprous oxide Chemical compound [O-2].[Cu+].[Cu+] KRFJLUBVMFXRPN-UHFFFAOYSA-N 0.000 claims abstract description 73
- 229910052802 copper Inorganic materials 0.000 claims abstract description 60
- 239000011246 composite particle Substances 0.000 claims abstract description 31
- 238000005304 joining Methods 0.000 claims abstract description 27
- 239000012535 impurity Substances 0.000 claims abstract description 11
- 238000005245 sintering Methods 0.000 claims description 16
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 15
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 11
- 239000012298 atmosphere Substances 0.000 claims description 10
- 238000010438 heat treatment Methods 0.000 claims description 10
- 239000001257 hydrogen Substances 0.000 claims description 10
- 229910052739 hydrogen Inorganic materials 0.000 claims description 10
- 239000005749 Copper compound Substances 0.000 claims description 9
- 150000001880 copper compounds Chemical class 0.000 claims description 9
- 239000003638 chemical reducing agent Substances 0.000 claims description 6
- BDAGIHXWWSANSR-UHFFFAOYSA-N methanoic acid Natural products OC=O BDAGIHXWWSANSR-UHFFFAOYSA-N 0.000 claims description 6
- 239000000463 material Substances 0.000 claims description 5
- SXTLQDJHRPXDSB-UHFFFAOYSA-N copper;dinitrate;trihydrate Chemical compound O.O.O.[Cu+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O SXTLQDJHRPXDSB-UHFFFAOYSA-N 0.000 claims description 4
- 239000002612 dispersion medium Substances 0.000 claims description 4
- OSWFIVFLDKOXQC-UHFFFAOYSA-N 4-(3-methoxyphenyl)aniline Chemical compound COC1=CC=CC(C=2C=CC(N)=CC=2)=C1 OSWFIVFLDKOXQC-UHFFFAOYSA-N 0.000 claims description 3
- 150000001299 aldehydes Chemical class 0.000 claims description 3
- 239000007864 aqueous solution Substances 0.000 claims description 3
- 239000003795 chemical substances by application Substances 0.000 claims description 3
- 235000019253 formic acid Nutrition 0.000 claims description 3
- 229920005862 polyol Polymers 0.000 claims description 3
- 150000003077 polyols Chemical class 0.000 claims description 3
- JJLJMEJHUUYSSY-UHFFFAOYSA-L Copper hydroxide Chemical compound [OH-].[OH-].[Cu+2] JJLJMEJHUUYSSY-UHFFFAOYSA-L 0.000 claims description 2
- 239000005750 Copper hydroxide Substances 0.000 claims description 2
- 229910001956 copper hydroxide Inorganic materials 0.000 claims description 2
- ORTQZVOHEJQUHG-UHFFFAOYSA-L copper(II) chloride Chemical compound Cl[Cu]Cl ORTQZVOHEJQUHG-UHFFFAOYSA-L 0.000 claims description 2
- OPQARKPSCNTWTJ-UHFFFAOYSA-L copper(ii) acetate Chemical compound [Cu+2].CC([O-])=O.CC([O-])=O OPQARKPSCNTWTJ-UHFFFAOYSA-L 0.000 claims description 2
- 238000003825 pressing Methods 0.000 claims description 2
- 125000004435 hydrogen atom Chemical class [H]* 0.000 claims 1
- 238000001556 precipitation Methods 0.000 claims 1
- 239000002105 nanoparticle Substances 0.000 abstract description 62
- 150000002500 ions Chemical class 0.000 abstract description 5
- 238000013508 migration Methods 0.000 abstract description 5
- 230000005012 migration Effects 0.000 abstract description 5
- 229910052751 metal Inorganic materials 0.000 abstract description 3
- 239000002184 metal Substances 0.000 abstract description 3
- 150000002739 metals Chemical class 0.000 abstract description 2
- 229910000431 copper oxide Inorganic materials 0.000 description 46
- 239000002131 composite material Substances 0.000 description 27
- 238000003786 synthesis reaction Methods 0.000 description 15
- 239000002904 solvent Substances 0.000 description 14
- 230000015572 biosynthetic process Effects 0.000 description 13
- 239000004065 semiconductor Substances 0.000 description 12
- 230000000052 comparative effect Effects 0.000 description 11
- 238000005259 measurement Methods 0.000 description 9
- 230000009467 reduction Effects 0.000 description 9
- 239000000126 substance Substances 0.000 description 9
- 239000010419 fine particle Substances 0.000 description 8
- 239000011261 inert gas Substances 0.000 description 8
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 7
- 239000000243 solution Substances 0.000 description 7
- 238000012360 testing method Methods 0.000 description 7
- JPVYNHNXODAKFH-UHFFFAOYSA-N Cu2+ Chemical compound [Cu+2] JPVYNHNXODAKFH-UHFFFAOYSA-N 0.000 description 6
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 6
- 230000005587 bubbling Effects 0.000 description 6
- 238000000576 coating method Methods 0.000 description 6
- 229910001431 copper ion Inorganic materials 0.000 description 6
- 230000003647 oxidation Effects 0.000 description 6
- 238000007254 oxidation reaction Methods 0.000 description 6
- 229910052709 silver Inorganic materials 0.000 description 6
- 239000004332 silver Substances 0.000 description 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 5
- LZZYPRNAOMGNLH-UHFFFAOYSA-M Cetrimonium bromide Chemical compound [Br-].CCCCCCCCCCCCCCCC[N+](C)(C)C LZZYPRNAOMGNLH-UHFFFAOYSA-M 0.000 description 5
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 5
- 239000011248 coating agent Substances 0.000 description 5
- 230000007423 decrease Effects 0.000 description 5
- 239000002270 dispersing agent Substances 0.000 description 5
- 238000002156 mixing Methods 0.000 description 5
- 239000003495 polar organic solvent Substances 0.000 description 5
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 description 4
- 239000005751 Copper oxide Substances 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- 239000000919 ceramic Substances 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 4
- 229960004643 cupric oxide Drugs 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 239000002082 metal nanoparticle Substances 0.000 description 4
- 239000000843 powder Substances 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 3
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 3
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 3
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 description 3
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- 150000001450 anions Chemical class 0.000 description 3
- 239000006227 byproduct Substances 0.000 description 3
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 description 3
- 239000012153 distilled water Substances 0.000 description 3
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 239000002994 raw material Substances 0.000 description 3
- 238000003756 stirring Methods 0.000 description 3
- 230000002194 synthesizing effect Effects 0.000 description 3
- 238000002411 thermogravimetry Methods 0.000 description 3
- 238000005406 washing Methods 0.000 description 3
- IKHGUXGNUITLKF-UHFFFAOYSA-N Acetaldehyde Chemical compound CC=O IKHGUXGNUITLKF-UHFFFAOYSA-N 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 description 2
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 2
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 2
- 238000002441 X-ray diffraction Methods 0.000 description 2
- 239000000654 additive Substances 0.000 description 2
- 230000000996 additive effect Effects 0.000 description 2
- 150000001298 alcohols Chemical class 0.000 description 2
- 230000003197 catalytic effect Effects 0.000 description 2
- WOWHHFRSBJGXCM-UHFFFAOYSA-M cetyltrimethylammonium chloride Chemical compound [Cl-].CCCCCCCCCCCCCCCC[N+](C)(C)C WOWHHFRSBJGXCM-UHFFFAOYSA-M 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- -1 copper carboxylate Chemical class 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 238000002149 energy-dispersive X-ray emission spectroscopy Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 150000002431 hydrogen Chemical class 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 239000003960 organic solvent Substances 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 239000003566 sealing material Substances 0.000 description 2
- 229910052708 sodium Inorganic materials 0.000 description 2
- 239000011734 sodium Substances 0.000 description 2
- 239000012279 sodium borohydride Substances 0.000 description 2
- 229910000033 sodium borohydride Inorganic materials 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- 238000001308 synthesis method Methods 0.000 description 2
- POAOYUHQDCAZBD-UHFFFAOYSA-N 2-butoxyethanol Chemical compound CCCCOCCO POAOYUHQDCAZBD-UHFFFAOYSA-N 0.000 description 1
- YIWUKEYIRIRTPP-UHFFFAOYSA-N 2-ethylhexan-1-ol Chemical compound CCCCC(CC)CO YIWUKEYIRIRTPP-UHFFFAOYSA-N 0.000 description 1
- DHIXFTVGHROZHD-UHFFFAOYSA-N 2-ethylhexane-1-sulfonic acid Chemical compound CCCCC(CC)CS(O)(=O)=O DHIXFTVGHROZHD-UHFFFAOYSA-N 0.000 description 1
- CIWBSHSKHKDKBQ-JLAZNSOCSA-N Ascorbic acid Natural products OC[C@H](O)[C@H]1OC(=O)C(O)=C1O CIWBSHSKHKDKBQ-JLAZNSOCSA-N 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- XDTMQSROBMDMFD-UHFFFAOYSA-N Cyclohexane Chemical compound C1CCCCC1 XDTMQSROBMDMFD-UHFFFAOYSA-N 0.000 description 1
- KCXVZYZYPLLWCC-UHFFFAOYSA-N EDTA Chemical compound OC(=O)CN(CC(O)=O)CCN(CC(O)=O)CC(O)=O KCXVZYZYPLLWCC-UHFFFAOYSA-N 0.000 description 1
- 229910002651 NO3 Inorganic materials 0.000 description 1
- NHNBFGGVMKEFGY-UHFFFAOYSA-N Nitrate Chemical compound [O-][N+]([O-])=O NHNBFGGVMKEFGY-UHFFFAOYSA-N 0.000 description 1
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 1
- 239000002202 Polyethylene glycol Substances 0.000 description 1
- 239000004372 Polyvinyl alcohol Substances 0.000 description 1
- DBMJMQXJHONAFJ-UHFFFAOYSA-M Sodium laurylsulphate Chemical compound [Na+].CCCCCCCCCCCCOS([O-])(=O)=O DBMJMQXJHONAFJ-UHFFFAOYSA-M 0.000 description 1
- 229920002125 Sokalan® Polymers 0.000 description 1
- 238000004833 X-ray photoelectron spectroscopy Methods 0.000 description 1
- DAZWMJDZEPDDGO-UHFFFAOYSA-N [O].[O].[Cu] Chemical compound [O].[O].[Cu] DAZWMJDZEPDDGO-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 239000003963 antioxidant agent Substances 0.000 description 1
- 230000003078 antioxidant effect Effects 0.000 description 1
- 235000006708 antioxidants Nutrition 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 235000010323 ascorbic acid Nutrition 0.000 description 1
- 229960005070 ascorbic acid Drugs 0.000 description 1
- 239000011668 ascorbic acid Substances 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 239000000084 colloidal system Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- VMKYLARTXWTBPI-UHFFFAOYSA-N copper;dinitrate;hydrate Chemical compound O.[Cu+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O VMKYLARTXWTBPI-UHFFFAOYSA-N 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 238000005430 electron energy loss spectroscopy Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 150000002576 ketones Chemical class 0.000 description 1
- TYQCGQRIZGCHNB-JLAZNSOCSA-N l-ascorbic acid Chemical compound OC[C@H](O)[C@H]1OC(O)=C(O)C1=O TYQCGQRIZGCHNB-JLAZNSOCSA-N 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 229910000510 noble metal Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000004584 polyacrylic acid Substances 0.000 description 1
- 229920001223 polyethylene glycol Polymers 0.000 description 1
- 229920002451 polyvinyl alcohol Polymers 0.000 description 1
- 229920000036 polyvinylpyrrolidone Polymers 0.000 description 1
- 239000001267 polyvinylpyrrolidone Substances 0.000 description 1
- 235000013855 polyvinylpyrrolidone Nutrition 0.000 description 1
- 239000011164 primary particle Substances 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229920002545 silicone oil Polymers 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- 238000010998 test method Methods 0.000 description 1
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 1
- ZIBGPFATKBEMQZ-UHFFFAOYSA-N triethylene glycol Chemical compound OCCOCCOCCO ZIBGPFATKBEMQZ-UHFFFAOYSA-N 0.000 description 1
- 230000004580 weight loss Effects 0.000 description 1
- 239000008096 xylene Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/20—Conductive material dispersed in non-conductive organic material
- H01B1/22—Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F1/00—Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
- B22F1/10—Metallic powder containing lubricating or binding agents; Metallic powder containing organic material
- B22F1/105—Metallic powder containing lubricating or binding agents; Metallic powder containing organic material containing inorganic lubricating or binding agents, e.g. metal salts
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F3/00—Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces
- B22F3/10—Sintering only
- B22F3/1003—Use of special medium during sintering, e.g. sintering aid
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F9/00—Making metallic powder or suspensions thereof
- B22F9/16—Making metallic powder or suspensions thereof using chemical processes
- B22F9/18—Making metallic powder or suspensions thereof using chemical processes with reduction of metal compounds
- B22F9/24—Making metallic powder or suspensions thereof using chemical processes with reduction of metal compounds starting from liquid metal compounds, e.g. solutions
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
- C01G3/00—Compounds of copper
- C01G3/02—Oxides; Hydroxides
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C1/00—Making non-ferrous alloys
- C22C1/04—Making non-ferrous alloys by powder metallurgy
- C22C1/05—Mixtures of metal powder with non-metallic powder
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/52—Mounting semiconductor bodies in containers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01R—ELECTRICALLY-CONDUCTIVE CONNECTIONS; STRUCTURAL ASSOCIATIONS OF A PLURALITY OF MUTUALLY-INSULATED ELECTRICAL CONNECTING ELEMENTS; COUPLING DEVICES; CURRENT COLLECTORS
- H01R4/00—Electrically-conductive connections between two or more conductive members in direct contact, i.e. touching one another; Means for effecting or maintaining such contact; Electrically-conductive connections having two or more spaced connecting locations for conductors and using contact members penetrating insulation
- H01R4/02—Soldered or welded connections
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2002/00—Crystal-structural characteristics
- C01P2002/70—Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data
- C01P2002/72—Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data by d-values or two theta-values, e.g. as X-ray diagram
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2004/00—Particle morphology
- C01P2004/60—Particles characterised by their size
- C01P2004/62—Submicrometer sized, i.e. from 0.1-1 micrometer
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2004/00—Particle morphology
- C01P2004/80—Particles consisting of a mixture of two or more inorganic phases
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
- H01L2224/36—Structure, shape, material or disposition of the strap connectors prior to the connecting process
- H01L2224/37—Structure, shape, material or disposition of the strap connectors prior to the connecting process of an individual strap connector
- H01L2224/37001—Core members of the connector
- H01L2224/37099—Material
- H01L2224/371—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
- H01L2224/36—Structure, shape, material or disposition of the strap connectors prior to the connecting process
- H01L2224/37—Structure, shape, material or disposition of the strap connectors prior to the connecting process of an individual strap connector
- H01L2224/37001—Core members of the connector
- H01L2224/37099—Material
- H01L2224/371—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/37138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/37147—Copper [Cu] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
- H01L2224/36—Structure, shape, material or disposition of the strap connectors prior to the connecting process
- H01L2224/37—Structure, shape, material or disposition of the strap connectors prior to the connecting process of an individual strap connector
- H01L2224/3754—Coating
- H01L2224/37599—Material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
- H01L2224/39—Structure, shape, material or disposition of the strap connectors after the connecting process
- H01L2224/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
- H01L2224/401—Disposition
- H01L2224/40151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/40221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/40225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73201—Location after the connecting process on the same surface
- H01L2224/73221—Strap and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/191—Disposition
- H01L2924/19101—Disposition of discrete passive components
- H01L2924/19107—Disposition of discrete passive components off-chip wires
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Mechanical Engineering (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Materials Engineering (AREA)
- Dispersion Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Metallurgy (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Powder Metallurgy (AREA)
- Nanotechnology (AREA)
- Composite Materials (AREA)
- Crystallography & Structural Chemistry (AREA)
- Die Bonding (AREA)
Abstract
Description
図1は、本発明に係る焼結接合剤の構成要素として必須の銅・酸化第一銅複合ナノ粒子を合成する方法を示すフローチャートである。
。
生成しにくいからである。
銅・酸化第一銅複合ナノ粒子の平均粒径は、2〜500nmが好ましく、10〜200nmがより好ましい。平均粒子径が2nm未満になると、化学活性度が高くなり過ぎて、酸化第一銅粒子中の銅成分も酸化してしまうためである。また、平均粒子径が500nm超の場合は、凝集成分が多くなり、接合強度の低下を招くからである。
本発明に係る焼結接合剤に対する焼結熱処理としては、還元雰囲気中100〜500℃の温度で熱処理を施すことが好ましい。また、還元雰囲気としては特段に限定されるものではないが、例えば、水素雰囲気、ギ酸雰囲気、エタノール雰囲気などが好適である。
原料となる銅化合物としてCu(NO3)2・3H2O粉末(関東化学株式会社製)を用い、溶媒として水を用い、銅・酸化第一銅ナノ粒子の析出剤としてNaBH4(関東化学株式会社製、92.0%)を用いた。容積1000mLのビーカーにて30分間の窒素バブリングを行った蒸留水1000mLに対し、銅イオン濃度が0.01mol/LとなるようにCu(NO3)2・3H2O粉末を加え、40℃のウォーターバス中で均一に溶解させた。その後、0.2〜0.6mol/mLのNaBH4水溶液(50mL)を滴下することで、銅・酸化第一銅ナノ粒子を合成した。
作製した銅・酸化第一銅複合粒子(試料1〜3)に対し、粒度分布計(Malvern Instruments Ltd製、ゼータサイザーナノZS90)を用いて粒径を測定した。測定試料は作製後の溶液を希釈したものを使用した。X線回折装置(株式会社リガク製、RU200B)を用いて粒子を構成する成分を測定した(スキャン速度=2deg/min)。また、粒子に含まれる銅及び酸化銅粒子の成分と、その粒子の還元温度を水素中の示差熱熱重量同時測定装置(メトラー・トレド株式会社製、TGA/SDTA851型)を用いて算出した。
電子部品同士の接合を模擬して接合強度試験を実施した。試験方法は次のとおりである。測定用に用いた銅の試験片としては、直径10mm・厚さ5mmの下側試験片と、直径5mm・厚さ2mmの上側試験片とを用いた。下側試験片上に用意した焼結接合剤を塗布し、その上に上側試験片を設置し、水素中400℃の温度で5分間の焼結熱処理を行った。このとき、面圧1.2MPaの荷重を同時に加えた。剪断試験機(西進商事株式会社製
、ボンドテスターSS−100KP、最大荷重100kg)を用いて、接合させた試片に剪断応力を負荷し(剪断速度30mm/min)、破断時の最大荷重を測定した。最大荷重を接合面積で除して接合強度を求めた。
図6Aは、本発明を適用した絶縁型半導体装置を示す平面図である。図6Bは、図6AのA−A断面図である。図7は、図6Aの要部を示す斜視図である。図8は、図6Aの半導体素子を設置した部分を拡大して示す模式断面図である。以下、図6A〜8を参照しながら説明する。
Claims (10)
- 金属の銅を含み、残部が酸化第一銅及び不可避的不純物である複合粒子であって、
前記銅が当該複合粒子の内部に分散した構造を有し、
当該複合粒子の平均粒径が1000nm以下である、接合用金属酸化物粒子。 - 前記複合粒子は、実質的に酸化第一銅で構成されている、請求項1記載の接合用金属酸化物粒子。
- 請求項1又は2に記載の接合用金属酸化物粒子と、分散媒と、を含み、
前記接合用金属酸化物粒子の含有量は、90質量%以上である、焼結接合剤。 - 金属の銅を含み、残部が酸化第一銅及び不可避的不純物である複合粒子であって、前記銅が当該複合粒子の内部に分散した構造を有し、当該複合粒子の平均粒径が1000nm以下である接合材料を製造する方法であって、
銅化合物の水溶液に還元剤を混合し、前記複合粒子を析出により生成する、接合用金属酸化物粒子の製造方法。 - 前記銅化合物は、硝酸銅三水和物、塩化銅、水酸化銅及び酢酸銅からなる群から選択された少なくとも一種である、請求項4記載の接合用金属酸化物粒子の製造方法。
- 前記還元剤は、NaBH4である、請求項4又は5に記載の接合用金属酸化物粒子の製造方法。
- 前記分散媒は、水、アルコール類、アルデヒド類又はポリオール類を含む、請求項4〜6のいずれか一項に記載の接合用金属酸化物粒子の製造方法。
- 2つの電子部品を接合する方法であって、
請求項1若しくは2に記載の接合用金属酸化物粒子又は請求項3記載の焼結接合剤を2つの電子部品の接合面のうち少なくとも一方に塗布し、前記2つの電子部品の接合面の間に前記接合用金属酸化物粒子又は前記焼結接合剤を挟み込む工程と、
その後、還元雰囲気中100〜500℃にて前記電子部品の焼結熱処理をする工程と、を含む、電子部品の接合方法。 - 前記還元雰囲気は、水素、ギ酸又はエタノールを含むものである、請求項8記載の電子部品の接合方法。
- 前記焼結熱処理は、前記2つの電子部品の接合面が密着するように加圧しながら行う、請求項8又は請求項9に記載の電子部品の接合方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2014244707 | 2014-12-03 | ||
JP2014244707 | 2014-12-03 | ||
PCT/JP2015/082333 WO2016088554A1 (ja) | 2014-12-03 | 2015-11-18 | 接合用金属酸化物粒子、これを含む焼結接合剤、接合用金属酸化物粒子の製造方法、及び電子部品の接合方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPWO2016088554A1 true JPWO2016088554A1 (ja) | 2017-07-06 |
JP6352444B2 JP6352444B2 (ja) | 2018-07-04 |
Family
ID=56091504
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2016562374A Expired - Fee Related JP6352444B2 (ja) | 2014-12-03 | 2015-11-18 | 接合用金属酸化物粒子、これを含む焼結接合剤、接合用金属酸化物粒子の製造方法、及び電子部品の接合方法 |
Country Status (3)
Country | Link |
---|---|
US (1) | US20170278589A1 (ja) |
JP (1) | JP6352444B2 (ja) |
WO (1) | WO2016088554A1 (ja) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5941588B2 (ja) * | 2014-09-01 | 2016-06-29 | Dowaエレクトロニクス株式会社 | 接合材およびそれを用いた接合方法 |
JP6565710B2 (ja) * | 2016-01-27 | 2019-08-28 | 三菱マテリアル株式会社 | 銅部材接合体の製造方法 |
CN110431657A (zh) | 2017-03-24 | 2019-11-08 | 三菱电机株式会社 | 半导体装置及其制造方法 |
US10913056B2 (en) * | 2017-07-31 | 2021-02-09 | Honda Motor Co., Ltd. | Method for synthesis of copper/copper oxide nanocrystals |
CN112018398B (zh) * | 2019-05-29 | 2022-06-03 | 中南大学 | 一种Cu2O/N-C氧还原催化剂及其制备和应用 |
CN110407245B (zh) * | 2019-07-22 | 2020-11-17 | 中国矿业大学 | 一锅法制备薄片状和球状氧化亚铜纳米颗粒的方法 |
WO2023075782A1 (en) * | 2021-10-29 | 2023-05-04 | Hewlett-Packard Development Company, L.P. | Binding agents with humectants for three-dimensional printers |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20030051580A1 (en) * | 2001-01-31 | 2003-03-20 | Lewis Kenrick M. | Preparation of nanosized copper and copper compounds |
JP2009084678A (ja) * | 2007-09-28 | 2009-04-23 | Samsung Electro Mech Co Ltd | 銅系ナノ粒子の製造方法 |
WO2010018782A1 (ja) * | 2008-08-11 | 2010-02-18 | 地方独立行政法人大阪市立工業研究所 | 銅系ナノ粒子及びその製造方法 |
JP2010189681A (ja) * | 2009-02-17 | 2010-09-02 | Hitachi Ltd | 耐酸化性銅微粒子の作製方法、及び、それを用いた接合方法 |
WO2011048937A1 (ja) * | 2009-10-23 | 2011-04-28 | 国立大学法人京都大学 | 銅系ナノ粒子高濃度分散液を用いた導体膜とその製造方法 |
JP2013091835A (ja) * | 2011-10-27 | 2013-05-16 | Hitachi Ltd | 銅ナノ粒子を用いた焼結性接合材料及びその製造方法及び電子部材の接合方法 |
-
2015
- 2015-11-18 WO PCT/JP2015/082333 patent/WO2016088554A1/ja active Application Filing
- 2015-11-18 US US15/510,865 patent/US20170278589A1/en not_active Abandoned
- 2015-11-18 JP JP2016562374A patent/JP6352444B2/ja not_active Expired - Fee Related
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20030051580A1 (en) * | 2001-01-31 | 2003-03-20 | Lewis Kenrick M. | Preparation of nanosized copper and copper compounds |
JP2009084678A (ja) * | 2007-09-28 | 2009-04-23 | Samsung Electro Mech Co Ltd | 銅系ナノ粒子の製造方法 |
WO2010018782A1 (ja) * | 2008-08-11 | 2010-02-18 | 地方独立行政法人大阪市立工業研究所 | 銅系ナノ粒子及びその製造方法 |
JP2010189681A (ja) * | 2009-02-17 | 2010-09-02 | Hitachi Ltd | 耐酸化性銅微粒子の作製方法、及び、それを用いた接合方法 |
WO2011048937A1 (ja) * | 2009-10-23 | 2011-04-28 | 国立大学法人京都大学 | 銅系ナノ粒子高濃度分散液を用いた導体膜とその製造方法 |
JP2013091835A (ja) * | 2011-10-27 | 2013-05-16 | Hitachi Ltd | 銅ナノ粒子を用いた焼結性接合材料及びその製造方法及び電子部材の接合方法 |
Also Published As
Publication number | Publication date |
---|---|
US20170278589A1 (en) | 2017-09-28 |
JP6352444B2 (ja) | 2018-07-04 |
WO2016088554A1 (ja) | 2016-06-09 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6352444B2 (ja) | 接合用金属酸化物粒子、これを含む焼結接合剤、接合用金属酸化物粒子の製造方法、及び電子部品の接合方法 | |
JP5606421B2 (ja) | 銅ナノ粒子を用いた焼結性接合材料及びその製造方法及び電子部材の接合方法 | |
JP5227828B2 (ja) | 耐酸化性銅微粒子の作製方法、及び、それを用いた接合方法 | |
Liu et al. | Highly conductive Cu–Cu joint formation by low-temperature sintering of formic acid-treated Cu nanoparticles | |
JP5557698B2 (ja) | 焼結接合剤、その製造方法およびそれを用いた接合方法 | |
JP6153077B2 (ja) | 金属ナノ粒子ペースト、それを含有する接合材料、およびそれを用いた半導体装置 | |
TWI651149B (zh) | 金屬接合用組成物 | |
KR20180004853A (ko) | 접합재료, 접합체, 및 접합방법 | |
WO2015129562A1 (ja) | 低温焼結性に優れる銀ペースト及び該銀ペーストの製造方法 | |
JP6855539B2 (ja) | 電力半導体接合用焼結ペースト組成物 | |
WO2016002741A1 (ja) | ニッケル粒子組成物、接合材及びそれを用いた接合方法 | |
JP6032110B2 (ja) | 金属ナノ粒子材料、それを含有する接合材料、およびそれを用いた半導体装置 | |
JP6153076B2 (ja) | 金属ナノ粒子ペースト、それを含有する接合材料、及びそれを用いた半導体装置 | |
JP2007136503A (ja) | 接合用クラッドはんだ | |
WO2018030173A1 (ja) | 接合用組成物及びその製造方法 | |
Sun et al. | Solderless bonding with nanoporous copper as interlayer for high-temperature applications | |
JP6270241B2 (ja) | 接合材料及びそれを用いた半導体装置 | |
JP5733638B2 (ja) | 接合材料およびそれを用いた半導体装置、ならびに配線材料およびそれを用いた電子素子用配線 | |
JP2007080635A (ja) | 導電部形成用粒子 | |
TWI677488B (zh) | 低溫燒結性表面處理銅微粒子之製造方法 | |
JP6626572B2 (ja) | 金属接合材料及びその製造方法、並びにそれを使用した金属接合体の製造方法 | |
JP6267835B1 (ja) | 接合用組成物及びその製造方法 | |
JP6338419B2 (ja) | 金属粒子組成物、接合材及びそれを用いた接合方法 | |
JP2018092798A (ja) | 導電性接合材料及び半導体装置の製造方法 | |
高悦 et al. | Highly reliable Cu particles sinter joining for die-attach of next generation power devices |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A524 | Written submission of copy of amendment under article 19 pct |
Free format text: JAPANESE INTERMEDIATE CODE: A527 Effective date: 20170310 |
|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20170310 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20180529 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20180606 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6352444 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
LAPS | Cancellation because of no payment of annual fees |