JPWO2014088066A1 - 高透過性ガラス - Google Patents

高透過性ガラス Download PDF

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Publication number
JPWO2014088066A1
JPWO2014088066A1 JP2014551137A JP2014551137A JPWO2014088066A1 JP WO2014088066 A1 JPWO2014088066 A1 JP WO2014088066A1 JP 2014551137 A JP2014551137 A JP 2014551137A JP 2014551137 A JP2014551137 A JP 2014551137A JP WO2014088066 A1 JPWO2014088066 A1 JP WO2014088066A1
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JP
Japan
Prior art keywords
glass
transparent conductive
conductive film
glass plate
highly
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2014551137A
Other languages
English (en)
Japanese (ja)
Inventor
博之 土屋
博之 土屋
淳 笹井
淳 笹井
近藤　裕己
裕己 近藤
志堂寺　栄治
栄治 志堂寺
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AGC Inc
Original Assignee
Asahi Glass Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Asahi Glass Co Ltd filed Critical Asahi Glass Co Ltd
Publication of JPWO2014088066A1 publication Critical patent/JPWO2014088066A1/ja
Withdrawn legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/048—Encapsulation of modules
    • H01L31/0488—Double glass encapsulation, e.g. photovoltaic cells arranged between front and rear glass sheets
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C3/00—Glass compositions
    • C03C3/04—Glass compositions containing silica
    • C03C3/076—Glass compositions containing silica with 40% to 90% silica, by weight
    • C03C3/083—Glass compositions containing silica with 40% to 90% silica, by weight containing aluminium oxide or an iron compound
    • C03C3/085—Glass compositions containing silica with 40% to 90% silica, by weight containing aluminium oxide or an iron compound containing an oxide of a divalent metal
    • C03C3/087—Glass compositions containing silica with 40% to 90% silica, by weight containing aluminium oxide or an iron compound containing an oxide of a divalent metal containing calcium oxide, e.g. common sheet or container glass
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C3/00—Glass compositions
    • C03C3/04—Glass compositions containing silica
    • C03C3/076—Glass compositions containing silica with 40% to 90% silica, by weight
    • C03C3/095—Glass compositions containing silica with 40% to 90% silica, by weight containing rare earths
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Geochemistry & Mineralogy (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Glass Compositions (AREA)
JP2014551137A 2012-12-07 2013-12-05 高透過性ガラス Withdrawn JPWO2014088066A1 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2012268792 2012-12-07
JP2012268792 2012-12-07
PCT/JP2013/082698 WO2014088066A1 (fr) 2012-12-07 2013-12-05 Verre hautement perméable

Publications (1)

Publication Number Publication Date
JPWO2014088066A1 true JPWO2014088066A1 (ja) 2017-01-05

Family

ID=50883478

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2014551137A Withdrawn JPWO2014088066A1 (ja) 2012-12-07 2013-12-05 高透過性ガラス

Country Status (3)

Country Link
JP (1) JPWO2014088066A1 (fr)
CN (1) CN104918895A (fr)
WO (1) WO2014088066A1 (fr)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2016115880A (ja) * 2014-12-17 2016-06-23 積水化学工業株式会社 有機無機ハイブリッド太陽電池

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0585768A (ja) * 1991-03-22 1993-04-06 Pilkington Plc 硼珪酸ガラス組成
WO2000014021A1 (fr) * 1998-09-04 2000-03-16 Nippon Sheet Glass Co., Ltd. Verre clair a facteur de transmission eleve et son procede de production, plaque de verre a couche electro-conductrice et son procede de production, et article de verre
JP2000226228A (ja) * 1999-02-05 2000-08-15 Corning Inc 太陽電池のカバ―ガラス
WO2001066477A1 (fr) * 2000-03-06 2001-09-13 Nippon Sheet Glass Co., Ltd. Verre plat a coefficient de transmission eleve
WO2009060871A1 (fr) * 2007-11-06 2009-05-14 Asahi Glass Company, Limited Plaque de verre pour substrat
JP2011256102A (ja) * 2010-06-09 2011-12-22 Schott Ag 特殊清澄法による透明ガラスまたは透明引上げガラスの製造方法
US20120234368A1 (en) * 2011-03-09 2012-09-20 Saint-Gobain Glass France Substrate for photovoltaic cell

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2003057638A1 (fr) * 2001-12-28 2003-07-17 Nippon Sheet Glass Company, Limited Verre en feuilles et verre en feuilles utilise avec un convertisseur photoelectrique
FR2937798B1 (fr) * 2008-10-24 2010-12-24 Saint Gobain Substrat verrier avec electrode notamment destine a un dispositif a diode electroluminescente organique

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0585768A (ja) * 1991-03-22 1993-04-06 Pilkington Plc 硼珪酸ガラス組成
WO2000014021A1 (fr) * 1998-09-04 2000-03-16 Nippon Sheet Glass Co., Ltd. Verre clair a facteur de transmission eleve et son procede de production, plaque de verre a couche electro-conductrice et son procede de production, et article de verre
JP2000226228A (ja) * 1999-02-05 2000-08-15 Corning Inc 太陽電池のカバ―ガラス
WO2001066477A1 (fr) * 2000-03-06 2001-09-13 Nippon Sheet Glass Co., Ltd. Verre plat a coefficient de transmission eleve
WO2009060871A1 (fr) * 2007-11-06 2009-05-14 Asahi Glass Company, Limited Plaque de verre pour substrat
JP2011256102A (ja) * 2010-06-09 2011-12-22 Schott Ag 特殊清澄法による透明ガラスまたは透明引上げガラスの製造方法
US20120234368A1 (en) * 2011-03-09 2012-09-20 Saint-Gobain Glass France Substrate for photovoltaic cell

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
牧島亮男 他: ""ガラス材料設計支援システム：ＶｉｔｒＥＳ"", ＦＵＪＩＴＳＵ, vol. 第44巻第6号, JPN6017012715, 10 November 1993 (1993-11-10), JP, pages 560 - 565, ISSN: 0003740442 *

Also Published As

Publication number Publication date
CN104918895A (zh) 2015-09-16
WO2014088066A1 (fr) 2014-06-12

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