JPWO2014073311A1 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JPWO2014073311A1 JPWO2014073311A1 JP2014545616A JP2014545616A JPWO2014073311A1 JP WO2014073311 A1 JPWO2014073311 A1 JP WO2014073311A1 JP 2014545616 A JP2014545616 A JP 2014545616A JP 2014545616 A JP2014545616 A JP 2014545616A JP WO2014073311 A1 JPWO2014073311 A1 JP WO2014073311A1
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- terminal
- conductor
- terminal conductor
- insulating substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
- H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
- H01L23/043—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body
- H01L23/047—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body the other leads being parallel to the base
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
- H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
- H01L23/043—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49811—Additional leads joined to the metallisation on the insulating substrate, e.g. pins, bumps, wires, flat leads
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3735—Laminates or multilayers, e.g. direct bond copper ceramic substrates
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
- H01L25/072—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00 the devices being arranged next to each other
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Structures For Mounting Electric Components On Printed Circuit Boards (AREA)
- Lead Frames For Integrated Circuits (AREA)
- Multi-Conductor Connections (AREA)
- Coupling Device And Connection With Printed Circuit (AREA)
Abstract
Description
本発明の実施の形態にかかる半導体装置の構造について説明する。図1は、本発明の実施の形態にかかる半導体装置の構造を示す説明図である。図1において、(a)は平面構造であり、(b)は断面構造である。図1に示すように、実施の形態にかかる半導体装置1は、放熱用の金属ベース板10、絶縁基板11、および外囲ケース20を備える。絶縁基板11は、金属ベース板10の上に搭載されている。外囲ケース20は、金属ベース板10の周縁に接着されている。絶縁基板11の両表面には図示しない導体箔の回路パターンが設けられている。絶縁基板11の、金属ベース板10側に対して反対側の表面の導体箔上に半導体素子(不図示)が実装されている。
10,40 金属ベース板
11,41 絶縁基板
20,50 外囲ケース
20a,20b,50a,50b 外囲ケースの側壁
30−1,30−2 端子導体
31−1,31−2 接続端子
32,32−1,32−2,32a,32b,32c 絶縁ブロック
33−1,33−2,33−3,33−4,63−1,63−2,63−3,63−4 外部接続用端子
Claims (5)
- 半導体素子を実装した絶縁基板と、
前記絶縁基板を囲む外囲ケースと、
前記絶縁基板の上部に、前記絶縁基板の表面に平行に、かつ前記絶縁基板との間隔がそれぞれ異なるように互いに離れて対向して配置され、前記外囲ケースの側壁に両端が固定された少なくとも2枚の金属製の板状の端子導体と、
隣り合う前記端子導体の間に配置された、隣り合う前記端子導体間の距離を一定以上に保つための絶縁ブロックと、
を備えることを特徴とする半導体装置。 - 前記絶縁ブロックは、前記端子導体の一部を包み込むように設けられていることを特徴とする請求項1に記載の半導体装置。
- 前記絶縁ブロックは、ポリフェニレンサルファイド樹脂またはエポキシ樹脂からなることを特徴とする請求項1に記載の半導体装置。
- 前記絶縁ブロックによって保たれた前記端子導体間の距離は、0.5mm以上5mm以下であることを特徴とする請求項1に記載の半導体装置。
- 前記絶縁基板上に所定パターンで形成された導体箔と、
前記端子導体に形成され、前記導体箔に半田付けされた接続端子と、
をさらに備え、
前記絶縁ブロックは、前記端子導体に接触して、前記接続端子と前記導体箔との半田付け時の加熱によって熱膨張する前記端子導体の熱変形を抑制することを特徴とする請求項1〜4のいずれか一つに記載の半導体装置。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2012246805 | 2012-11-09 | ||
JP2012246805 | 2012-11-09 | ||
PCT/JP2013/077395 WO2014073311A1 (ja) | 2012-11-09 | 2013-10-08 | 半導体装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPWO2014073311A1 true JPWO2014073311A1 (ja) | 2016-09-08 |
JP6028808B2 JP6028808B2 (ja) | 2016-11-24 |
Family
ID=50684428
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2014545616A Active JP6028808B2 (ja) | 2012-11-09 | 2013-10-08 | 半導体装置 |
Country Status (5)
Country | Link |
---|---|
US (1) | US9953890B2 (ja) |
JP (1) | JP6028808B2 (ja) |
CN (2) | CN104620379A (ja) |
DE (1) | DE112013005355B4 (ja) |
WO (1) | WO2014073311A1 (ja) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6891621B2 (ja) | 2017-04-27 | 2021-06-18 | 富士電機株式会社 | 半導体装置及び半導体装置の製造方法 |
JP2022092960A (ja) * | 2020-12-11 | 2022-06-23 | 株式会社村田製作所 | 高周波モジュール |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH07111310A (ja) * | 1993-10-13 | 1995-04-25 | Fuji Electric Co Ltd | 半導体装置 |
JP2000077603A (ja) * | 1998-08-31 | 2000-03-14 | Toshiba Corp | 半導体装置及びその製造方法 |
JP2012028595A (ja) * | 2010-07-26 | 2012-02-09 | Hitachi Automotive Systems Ltd | パワー半導体ユニット、パワーモジュールおよびそれらの製造方法 |
WO2012111397A1 (ja) * | 2011-02-17 | 2012-08-23 | 富士電機株式会社 | 半導体装置の内部配線構造 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0783087B2 (ja) | 1994-04-19 | 1995-09-06 | 富士電機株式会社 | 半導体装置 |
JP3396566B2 (ja) * | 1995-10-25 | 2003-04-14 | 三菱電機株式会社 | 半導体装置 |
JPH1041460A (ja) | 1996-05-20 | 1998-02-13 | Fuji Electric Co Ltd | 半導体装置 |
CN1146988C (zh) * | 1997-12-08 | 2004-04-21 | 东芝株式会社 | 半导体功率器件的封装及其组装方法 |
JP4301096B2 (ja) * | 2004-06-29 | 2009-07-22 | 富士電機デバイステクノロジー株式会社 | 半導体装置 |
JP4985012B2 (ja) * | 2007-03-22 | 2012-07-25 | 富士電機株式会社 | 半導体装置およびその製造方法 |
JP5176507B2 (ja) * | 2007-12-04 | 2013-04-03 | 富士電機株式会社 | 半導体装置 |
JP2012015222A (ja) * | 2010-06-30 | 2012-01-19 | Hitachi Ltd | 半導体装置 |
JP5813963B2 (ja) * | 2011-02-28 | 2015-11-17 | ローム株式会社 | 半導体装置、および、半導体装置の実装構造 |
-
2013
- 2013-10-08 JP JP2014545616A patent/JP6028808B2/ja active Active
- 2013-10-08 DE DE112013005355.1T patent/DE112013005355B4/de active Active
- 2013-10-08 WO PCT/JP2013/077395 patent/WO2014073311A1/ja active Application Filing
- 2013-10-08 CN CN201380047421.3A patent/CN104620379A/zh active Pending
- 2013-10-08 CN CN201910500748.0A patent/CN110164823B/zh active Active
-
2015
- 2015-03-06 US US14/640,123 patent/US9953890B2/en active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH07111310A (ja) * | 1993-10-13 | 1995-04-25 | Fuji Electric Co Ltd | 半導体装置 |
JP2000077603A (ja) * | 1998-08-31 | 2000-03-14 | Toshiba Corp | 半導体装置及びその製造方法 |
JP2012028595A (ja) * | 2010-07-26 | 2012-02-09 | Hitachi Automotive Systems Ltd | パワー半導体ユニット、パワーモジュールおよびそれらの製造方法 |
WO2012111397A1 (ja) * | 2011-02-17 | 2012-08-23 | 富士電機株式会社 | 半導体装置の内部配線構造 |
Also Published As
Publication number | Publication date |
---|---|
CN110164823B (zh) | 2023-08-22 |
DE112013005355T5 (de) | 2015-07-23 |
CN110164823A (zh) | 2019-08-23 |
JP6028808B2 (ja) | 2016-11-24 |
DE112013005355B4 (de) | 2023-06-07 |
CN104620379A (zh) | 2015-05-13 |
US20150187668A1 (en) | 2015-07-02 |
WO2014073311A1 (ja) | 2014-05-15 |
US9953890B2 (en) | 2018-04-24 |
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