JPWO2013047588A1 - 希土類元素を含んだ溶射用粉末及び皮膜、並びに前記皮膜を備えた部材 - Google Patents
希土類元素を含んだ溶射用粉末及び皮膜、並びに前記皮膜を備えた部材 Download PDFInfo
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- JPWO2013047588A1 JPWO2013047588A1 JP2013536330A JP2013536330A JPWO2013047588A1 JP WO2013047588 A1 JPWO2013047588 A1 JP WO2013047588A1 JP 2013536330 A JP2013536330 A JP 2013536330A JP 2013536330 A JP2013536330 A JP 2013536330A JP WO2013047588 A1 JPWO2013047588 A1 JP WO2013047588A1
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- 239000000843 powder Substances 0.000 title claims abstract description 115
- 238000007751 thermal spraying Methods 0.000 title claims abstract description 95
- 229910052761 rare earth metal Inorganic materials 0.000 title claims abstract description 88
- 239000011248 coating agent Substances 0.000 title description 35
- 238000000576 coating method Methods 0.000 title description 35
- 230000003628 erosive effect Effects 0.000 claims abstract description 56
- 238000005530 etching Methods 0.000 claims abstract description 35
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 23
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 23
- 239000001301 oxygen Substances 0.000 claims abstract description 23
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 13
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 12
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 claims abstract description 12
- 239000010703 silicon Substances 0.000 claims abstract description 12
- 239000011575 calcium Substances 0.000 claims abstract description 6
- 239000011777 magnesium Substances 0.000 claims abstract description 6
- 239000010936 titanium Substances 0.000 claims abstract description 6
- 239000011701 zinc Substances 0.000 claims abstract description 6
- 229910052796 boron Inorganic materials 0.000 claims abstract description 5
- 229910052791 calcium Inorganic materials 0.000 claims abstract description 5
- 229910052749 magnesium Inorganic materials 0.000 claims abstract description 5
- 229910052698 phosphorus Inorganic materials 0.000 claims abstract description 5
- 229910052712 strontium Inorganic materials 0.000 claims abstract description 5
- 229910052719 titanium Inorganic materials 0.000 claims abstract description 5
- 229910052725 zinc Inorganic materials 0.000 claims abstract description 5
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims abstract description 4
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 claims abstract description 4
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims abstract description 4
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims abstract description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims abstract description 4
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims abstract description 4
- 239000011574 phosphorus Substances 0.000 claims abstract description 4
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 claims abstract description 4
- 239000012895 dilution Substances 0.000 claims description 85
- 238000010790 dilution Methods 0.000 claims description 85
- 238000005507 spraying Methods 0.000 claims description 20
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 12
- 238000001020 plasma etching Methods 0.000 claims description 8
- 229910052786 argon Inorganic materials 0.000 claims description 6
- 239000007789 gas Substances 0.000 claims description 6
- TXEYQDLBPFQVAA-UHFFFAOYSA-N tetrafluoromethane Chemical compound FC(F)(F)F TXEYQDLBPFQVAA-UHFFFAOYSA-N 0.000 claims description 6
- 239000010955 niobium Substances 0.000 claims description 5
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- 229910052788 barium Inorganic materials 0.000 claims description 4
- 229910052735 hafnium Inorganic materials 0.000 claims description 4
- 229910052758 niobium Inorganic materials 0.000 claims description 4
- 229910052715 tantalum Inorganic materials 0.000 claims description 4
- 229910052726 zirconium Inorganic materials 0.000 claims description 4
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 claims description 3
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 claims description 3
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 claims description 3
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 3
- 239000012528 membrane Substances 0.000 claims 1
- 238000007865 diluting Methods 0.000 abstract 1
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- 150000001875 compounds Chemical class 0.000 description 31
- 239000002994 raw material Substances 0.000 description 12
- 239000004065 semiconductor Substances 0.000 description 11
- 230000000052 comparative effect Effects 0.000 description 10
- 238000000034 method Methods 0.000 description 10
- 238000005245 sintering Methods 0.000 description 9
- 239000000758 substrate Substances 0.000 description 7
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- 238000004519 manufacturing process Methods 0.000 description 6
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- 229910052684 Cerium Inorganic materials 0.000 description 4
- 229910052779 Neodymium Inorganic materials 0.000 description 4
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- 229910052706 scandium Inorganic materials 0.000 description 4
- 229910052727 yttrium Inorganic materials 0.000 description 4
- 229910052692 Dysprosium Inorganic materials 0.000 description 3
- 229910052691 Erbium Inorganic materials 0.000 description 3
- 229910052688 Gadolinium Inorganic materials 0.000 description 3
- 229910052777 Praseodymium Inorganic materials 0.000 description 3
- 229910052772 Samarium Inorganic materials 0.000 description 3
- 229910052769 Ytterbium Inorganic materials 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 238000007750 plasma spraying Methods 0.000 description 3
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- 239000007921 spray Substances 0.000 description 3
- 229910052693 Europium Inorganic materials 0.000 description 2
- 229910052689 Holmium Inorganic materials 0.000 description 2
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- 229910052771 Terbium Inorganic materials 0.000 description 2
- 229910052775 Thulium Inorganic materials 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
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- 238000005240 physical vapour deposition Methods 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 229910001404 rare earth metal oxide Inorganic materials 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
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- 229910000838 Al alloy Inorganic materials 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 229910052773 Promethium Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- 239000000443 aerosol Substances 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 description 1
- 239000008119 colloidal silica Substances 0.000 description 1
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- 238000000151 deposition Methods 0.000 description 1
- 239000002612 dispersion medium Substances 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- KBQHZAAAGSGFKK-UHFFFAOYSA-N dysprosium atom Chemical compound [Dy] KBQHZAAAGSGFKK-UHFFFAOYSA-N 0.000 description 1
- UYAHIZSMUZPPFV-UHFFFAOYSA-N erbium Chemical compound [Er] UYAHIZSMUZPPFV-UHFFFAOYSA-N 0.000 description 1
- OGPBJKLSAFTDLK-UHFFFAOYSA-N europium atom Chemical compound [Eu] OGPBJKLSAFTDLK-UHFFFAOYSA-N 0.000 description 1
- 238000004880 explosion Methods 0.000 description 1
- UIWYJDYFSGRHKR-UHFFFAOYSA-N gadolinium atom Chemical compound [Gd] UIWYJDYFSGRHKR-UHFFFAOYSA-N 0.000 description 1
- 230000009931 harmful effect Effects 0.000 description 1
- KJZYNXUDTRRSPN-UHFFFAOYSA-N holmium atom Chemical compound [Ho] KJZYNXUDTRRSPN-UHFFFAOYSA-N 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical compound [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 description 1
- OHSVLFRHMCKCQY-UHFFFAOYSA-N lutetium atom Chemical compound [Lu] OHSVLFRHMCKCQY-UHFFFAOYSA-N 0.000 description 1
- QEFYFXOXNSNQGX-UHFFFAOYSA-N neodymium atom Chemical compound [Nd] QEFYFXOXNSNQGX-UHFFFAOYSA-N 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- PUDIUYLPXJFUGB-UHFFFAOYSA-N praseodymium atom Chemical compound [Pr] PUDIUYLPXJFUGB-UHFFFAOYSA-N 0.000 description 1
- VQMWBBYLQSCNPO-UHFFFAOYSA-N promethium atom Chemical compound [Pm] VQMWBBYLQSCNPO-UHFFFAOYSA-N 0.000 description 1
- 238000005096 rolling process Methods 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- KZUNJOHGWZRPMI-UHFFFAOYSA-N samarium atom Chemical compound [Sm] KZUNJOHGWZRPMI-UHFFFAOYSA-N 0.000 description 1
- SIXSYDAISGFNSX-UHFFFAOYSA-N scandium atom Chemical compound [Sc] SIXSYDAISGFNSX-UHFFFAOYSA-N 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- GZCRRIHWUXGPOV-UHFFFAOYSA-N terbium atom Chemical compound [Tb] GZCRRIHWUXGPOV-UHFFFAOYSA-N 0.000 description 1
- FRNOGLGSGLTDKL-UHFFFAOYSA-N thulium atom Chemical compound [Tm] FRNOGLGSGLTDKL-UHFFFAOYSA-N 0.000 description 1
- NAWDYIZEMPQZHO-UHFFFAOYSA-N ytterbium Chemical compound [Yb] NAWDYIZEMPQZHO-UHFFFAOYSA-N 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C4/00—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge
- C23C4/04—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge characterised by the coating material
- C23C4/10—Oxides, borides, carbides, nitrides or silicides; Mixtures thereof
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C4/00—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge
- C23C4/04—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge characterised by the coating material
- C23C4/10—Oxides, borides, carbides, nitrides or silicides; Mixtures thereof
- C23C4/11—Oxides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C4/00—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge
- C23C4/04—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge characterised by the coating material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C4/00—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge
- C23C4/04—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge characterised by the coating material
- C23C4/06—Metallic material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C4/00—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge
- C23C4/04—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge characterised by the coating material
- C23C4/06—Metallic material
- C23C4/08—Metallic material containing only metal elements
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Coating By Spraying Or Casting (AREA)
Abstract
Description
Claims (10)
- 希土類元素と、希土類元素以外でかつ酸素以外の元素である第1の希釈元素とを含んだ溶射用粉末であって、前記第1の希釈元素の単一酸化物の焼結体は、133.3Paの圧力に保たれた平行平板型プラズマエッチング装置のチャンバー内で、四フッ化炭素とアルゴンと酸素を95:950:10の体積比で混合したエッチングガスを1.055L/分の流量で供給しながら、13.56MHzで1300Wの高周波電力を20時間にわたり印加するというエッチング条件下でのエロージョンレートが、同じエッチング条件下での酸化イットリウム焼結体のエロージョンレートの5倍以上である、溶射用粉末。
- 前記第1の希釈元素は、亜鉛、ケイ素、ホウ素、リン、チタン、カルシウム、ストロンチウム、バリウム及びマグネシウムから選ばれる一以上の元素である、請求項1に記載の溶射用粉末。
- 前記希土類元素及び前記第1の希釈元素を酸化物の形態で含む、請求項1又は2に記載の溶射用粉末。
- 希土類元素及び前記第1の希釈元素以外でかつ酸素以外の元素である第2の希釈元素をさらに含み、前記第2の希釈元素の単一酸化物の焼結体は、前記エッチング条件下でのエロージョンレートが、同じエッチング条件下での酸化イットリウム焼結体のエロージョンレートの1.5倍以上5倍未満である、請求項1〜3のいずれか一項に記載の溶射用粉末。
- 前記第2の希釈元素は、アルミニウム、ジルコニウム、ハフニウム、ニオブ及びタンタルから選ばれる一以上の元素である、請求項4に記載の溶射用粉末。
- 前記第2の希釈元素を酸化物の形態で含む、請求項4又は5に記載の溶射用粉末。
- 請求項1〜6のいずれか一項に記載の溶射用粉末を溶射して得られる皮膜。
- 希土類元素と、希土類元素以外でかつ酸素以外の元素である第1の希釈元素とを含んだ皮膜であって、前記第1の希釈元素の単一酸化物の焼結体は、133.3Paの圧力に保たれた平行平板型プラズマエッチング装置のチャンバー内で、四フッ化炭素とアルゴンと酸素を95:950:10の体積比で混合したエッチングガスを1.055L/分の流量で供給しながら、13.56MHzで1300Wの高周波電力を20時間にわたり印加するというエッチング条件下でのエロージョンレートが、同じエッチング条件下での酸化イットリウム焼結体のエロージョンレートの5倍以上である皮膜。
- 希土類元素及び前記第1の希釈元素以外でかつ酸素以外の元素である第2の希釈元素をさらに含み、前記第2の希釈元素の単一酸化物の焼結体は、前記エッチング条件下でのエロージョンレートが、同じエッチング条件下での酸化イットリウム焼結体のエロージョンレートの1.5倍以上5倍未満である、請求項8に記載の皮膜。
- 請求項7〜9のいずれか一項に記載の皮膜を表面に備えた部材。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011209564 | 2011-09-26 | ||
JP2011209564 | 2011-09-26 | ||
PCT/JP2012/074718 WO2013047588A1 (ja) | 2011-09-26 | 2012-09-26 | 希土類元素を含んだ溶射用粉末及び皮膜、並びに前記皮膜を備えた部材 |
Publications (2)
Publication Number | Publication Date |
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JPWO2013047588A1 true JPWO2013047588A1 (ja) | 2015-03-26 |
JP6261979B2 JP6261979B2 (ja) | 2018-01-17 |
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JP2013536330A Active JP6261979B2 (ja) | 2011-09-26 | 2012-09-26 | 皮膜の形成方法 |
Country Status (6)
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US (1) | US9528176B2 (ja) |
JP (1) | JP6261979B2 (ja) |
KR (2) | KR20140076588A (ja) |
CN (1) | CN103930586A (ja) |
TW (1) | TWI546415B (ja) |
WO (1) | WO2013047588A1 (ja) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
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TWI625422B (zh) * | 2011-09-26 | 2018-06-01 | 福吉米股份有限公司 | 含有稀土類元素之熔射用粉末及皮膜、以及具備前述皮膜之構件 |
JP6449224B2 (ja) | 2013-03-14 | 2019-01-09 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | 基板上の高純度アルミニウムトップコート |
US9663870B2 (en) | 2013-11-13 | 2017-05-30 | Applied Materials, Inc. | High purity metallic top coat for semiconductor manufacturing components |
JP5671648B1 (ja) * | 2014-08-08 | 2015-02-18 | 黒崎播磨株式会社 | 溶射材 |
CN105428195B (zh) * | 2014-09-17 | 2018-07-17 | 东京毅力科创株式会社 | 等离子体处理装置用的部件和部件的制造方法 |
KR102545922B1 (ko) * | 2015-12-28 | 2023-06-21 | 닛폰 이트륨 가부시키가이샤 | 막 형성용 재료 |
KR102266655B1 (ko) * | 2020-12-10 | 2021-06-18 | (주)코미코 | 이트륨계 과립 분말을 이용한 용사 피막의 제조 방법 및 이를 이용하여 제조된 이트륨계 용사 피막 |
KR102266656B1 (ko) * | 2020-12-10 | 2021-06-18 | (주)코미코 | 용사용 이트륨계 과립 분말 및 이를 이용한 용사 피막 |
KR102266658B1 (ko) * | 2020-12-10 | 2021-06-18 | 주식회사 미코 | 용사용 이트륨계 과립 분말 및 이를 이용한 용사 피막 |
CN114406282B (zh) * | 2022-01-26 | 2023-07-04 | 西安交通大学 | 一种基于粒子界面氧元素分布调控的高塑性冷喷涂钛沉积体及其制备方法 |
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US6194083B1 (en) * | 1997-07-28 | 2001-02-27 | Kabushiki Kaisha Toshiba | Ceramic composite material and its manufacturing method, and heat resistant member using thereof |
DE19807163C1 (de) | 1998-02-20 | 1999-10-28 | Rainer Gadow | Wärmedämmaterial und Verfahren zum Herstellen eines solchen |
US6916534B2 (en) | 2001-03-08 | 2005-07-12 | Shin-Etsu Chemical Co., Ltd. | Thermal spray spherical particles, and sprayed components |
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US6893994B2 (en) | 2002-08-13 | 2005-05-17 | Saint-Gobain Ceramics & Plastics, Inc. | Plasma spheroidized ceramic powder |
WO2006091613A2 (en) | 2005-02-24 | 2006-08-31 | Rutgers, The State University Of New Jersey | Nanocomposite ceramics and process for making the same |
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TWI625422B (zh) * | 2011-09-26 | 2018-06-01 | 福吉米股份有限公司 | 含有稀土類元素之熔射用粉末及皮膜、以及具備前述皮膜之構件 |
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KR20180118800A (ko) | 2018-10-31 |
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US9528176B2 (en) | 2016-12-27 |
US20140234634A1 (en) | 2014-08-21 |
TW201326463A (zh) | 2013-07-01 |
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