JPWO2013027591A1 - 太陽電池及び太陽電池モジュール - Google Patents
太陽電池及び太陽電池モジュール Download PDFInfo
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- JPWO2013027591A1 JPWO2013027591A1 JP2013529964A JP2013529964A JPWO2013027591A1 JP WO2013027591 A1 JPWO2013027591 A1 JP WO2013027591A1 JP 2013529964 A JP2013529964 A JP 2013529964A JP 2013529964 A JP2013529964 A JP 2013529964A JP WO2013027591 A1 JPWO2013027591 A1 JP WO2013027591A1
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- 239000000758 substrate Substances 0.000 claims abstract description 44
- 238000007747 plating Methods 0.000 claims description 29
- 239000004065 semiconductor Substances 0.000 claims description 19
- 239000002184 metal Substances 0.000 claims description 6
- 229910052751 metal Inorganic materials 0.000 claims description 6
- 229920005989 resin Polymers 0.000 claims description 3
- 239000011347 resin Substances 0.000 claims description 3
- 239000010949 copper Substances 0.000 description 15
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 14
- 229910052802 copper Inorganic materials 0.000 description 14
- 239000002585 base Substances 0.000 description 12
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 8
- 229910052710 silicon Inorganic materials 0.000 description 8
- 239000010703 silicon Substances 0.000 description 8
- 230000005684 electric field Effects 0.000 description 5
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 5
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 4
- 229910021417 amorphous silicon Inorganic materials 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 238000010030 laminating Methods 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- DQXBYHZEEUGOBF-UHFFFAOYSA-N but-3-enoic acid;ethene Chemical compound C=C.OC(=O)CC=C DQXBYHZEEUGOBF-UHFFFAOYSA-N 0.000 description 3
- 239000012141 concentrate Substances 0.000 description 3
- ARUVKPQLZAKDPS-UHFFFAOYSA-L copper(II) sulfate Chemical compound [Cu+2].[O-][S+2]([O-])([O-])[O-] ARUVKPQLZAKDPS-UHFFFAOYSA-L 0.000 description 3
- 238000007772 electroless plating Methods 0.000 description 3
- 239000005038 ethylene vinyl acetate Substances 0.000 description 3
- 229920001200 poly(ethylene-vinyl acetate) Polymers 0.000 description 3
- 238000010248 power generation Methods 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 239000003566 sealing material Substances 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 229910000365 copper sulfate Inorganic materials 0.000 description 2
- 239000006185 dispersion Substances 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 239000011787 zinc oxide Substances 0.000 description 2
- KCXVZYZYPLLWCC-UHFFFAOYSA-N EDTA Chemical compound OC(=O)CN(CC(O)=O)CCN(CC(O)=O)CC(O)=O KCXVZYZYPLLWCC-UHFFFAOYSA-N 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910006404 SnO 2 Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 229910001854 alkali hydroxide Inorganic materials 0.000 description 1
- 150000008044 alkali metal hydroxides Chemical class 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 229910000366 copper(II) sulfate Inorganic materials 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- WSFSSNUMVMOOMR-NJFSPNSNSA-N methanone Chemical compound O=[14CH2] WSFSSNUMVMOOMR-NJFSPNSNSA-N 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 238000005121 nitriding Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022433—Particular geometry of the grid contacts
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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- Engineering & Computer Science (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
Abstract
Description
11 基板
12 n型領域
13 p型領域
16 n型電極
16f n型細線電極
16b n型バスバー電極
16r 円弧状部
17 p型電極
17f p型細線電極
17b p型バスバー電極
17r 円弧状部
Claims (8)
- 半導体基板に、受光面と、前記受光面の反対側に設けられた裏面とを有する太陽電池であって、
前記基板の一主面上に形成された電極部を備え、
前記電極部は、
前記一主面上に形成された複数の第1細線電極と、
前記第1細線電極に隣接して形成された複数の第2細線電極と、
前記複数の第1細線電極を互い接続する第1バスバー電極と、
前記複数の第2細線電極を互い接続する第2バスバー電極と、
を有し、
前記第1細線電極及び第2細線電極のそれぞれの電極端部は、二辺が交差する部分が円弧状とされた円弧状部を二つ有するように形成されている、太陽電池。 - 前記第1細線電極及び第2細線電極の端部は、円弧状部に連なって直線状の端部が形成されている、請求項1に記載の太陽電池。
- 前記一主面は、基板の裏面である、請求項1又は請求項2に記載の太陽電池。
- 前記電極は、下地電極上にメッキにより形成された電極である、請求項1ないし請求項3のいずれか1項に記載の太陽電池。
- 少なくとも一方の細線電極の幅に対して円弧の半径が2%以上10%以下である、請求項4に記載の太陽電池。
- 前記下地電極は、蒸着金属膜又は導電性樹脂から選択されている、請求項4又は請求項5に記載の太陽電池。
- 前記第1バスバー電極及び前記第2バスバー電極の二辺が交差する部分は、円弧状に形成されている、請求項1に記載の太陽電池。
- 電気的に接続されている複数の太陽電池を含む太陽電池モジュールであって、
前記太陽電池は、半導体基板に、太陽光を受光する受光面と、前記受光面の反対側に設けられた裏面とを有し、前記基板の一主面上に形成された電極部を備え、
前記電極部は、
前記一主面上に形成された複数の第1細線電極と、
前記第1細線電極に隣接して形成された複数の第2細線電極と、
前記複数の第1細線電極を互い接続する第1バスバー電極と、
前記複数の第2細線電極を互い接続する第2バスバー電極と、
を有し、
前記第1細線電極及び第2細線電極のそれぞれの電極端部は、二辺が交差する部分が円弧状とされた円弧状部を二つ有するように形成されている、太陽電池モジュール。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011183712 | 2011-08-25 | ||
JP2011183712 | 2011-08-25 | ||
PCT/JP2012/070294 WO2013027591A1 (ja) | 2011-08-25 | 2012-08-09 | 太陽電池及び太陽電池モジュール |
Publications (2)
Publication Number | Publication Date |
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JPWO2013027591A1 true JPWO2013027591A1 (ja) | 2015-03-19 |
JP6028982B2 JP6028982B2 (ja) | 2016-11-24 |
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Application Number | Title | Priority Date | Filing Date |
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JP2013529964A Expired - Fee Related JP6028982B2 (ja) | 2011-08-25 | 2012-08-09 | 太陽電池の製造方法 |
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JP (1) | JP6028982B2 (ja) |
WO (1) | WO2013027591A1 (ja) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2015053303A (ja) * | 2013-09-05 | 2015-03-19 | シャープ株式会社 | 太陽電池セル、太陽電池モジュール、および太陽電池セルの製造方法。 |
CN109564946B (zh) | 2016-08-15 | 2023-10-03 | 夏普株式会社 | 光电转换元件以及光电转换装置 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05259488A (ja) * | 1992-03-11 | 1993-10-08 | Hitachi Ltd | シリコン太陽電池素子及び製造方法 |
JP2010095762A (ja) * | 2008-10-16 | 2010-04-30 | Fuji Electric Systems Co Ltd | 電気めっき方法 |
JP2011155229A (ja) * | 2010-01-28 | 2011-08-11 | Sanyo Electric Co Ltd | 太陽電池及び太陽電池の製造方法 |
WO2012026358A1 (ja) * | 2010-08-24 | 2012-03-01 | 三洋電機株式会社 | 太陽電池及びその製造方法 |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5410397B2 (ja) * | 2010-10-29 | 2014-02-05 | シャープ株式会社 | 半導体装置の製造方法、配線基板付き裏面電極型太陽電池セルの製造方法、太陽電池モジュールの製造方法、半導体装置、配線基板付き裏面電極型太陽電池セルおよび太陽電池モジュール |
-
2012
- 2012-08-09 WO PCT/JP2012/070294 patent/WO2013027591A1/ja active Application Filing
- 2012-08-09 JP JP2013529964A patent/JP6028982B2/ja not_active Expired - Fee Related
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05259488A (ja) * | 1992-03-11 | 1993-10-08 | Hitachi Ltd | シリコン太陽電池素子及び製造方法 |
JP2010095762A (ja) * | 2008-10-16 | 2010-04-30 | Fuji Electric Systems Co Ltd | 電気めっき方法 |
JP2011155229A (ja) * | 2010-01-28 | 2011-08-11 | Sanyo Electric Co Ltd | 太陽電池及び太陽電池の製造方法 |
WO2012026358A1 (ja) * | 2010-08-24 | 2012-03-01 | 三洋電機株式会社 | 太陽電池及びその製造方法 |
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WO2013027591A1 (ja) | 2013-02-28 |
JP6028982B2 (ja) | 2016-11-24 |
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