JPWO2011039843A1 - 磁性発振素子 - Google Patents
磁性発振素子 Download PDFInfo
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- JPWO2011039843A1 JPWO2011039843A1 JP2011533983A JP2011533983A JPWO2011039843A1 JP WO2011039843 A1 JPWO2011039843 A1 JP WO2011039843A1 JP 2011533983 A JP2011533983 A JP 2011533983A JP 2011533983 A JP2011533983 A JP 2011533983A JP WO2011039843 A1 JPWO2011039843 A1 JP WO2011039843A1
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- magnetic
- magnetization
- oscillation element
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- ferromagnetic
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B15/00—Generation of oscillations using galvano-magnetic devices, e.g. Hall-effect devices, or using superconductivity effects
- H03B15/006—Generation of oscillations using galvano-magnetic devices, e.g. Hall-effect devices, or using superconductivity effects using spin transfer effects or giant magnetoresistance
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
- G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
- G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
- H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
- H01F10/3254—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the spacer being semiconducting or insulating, e.g. for spin tunnel junction [STJ]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
- H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
- H01F10/3286—Spin-exchange coupled multilayers having at least one layer with perpendicular magnetic anisotropy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
- H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
- H01F10/329—Spin-exchange coupled multilayers wherein the magnetisation of the free layer is switched by a spin-polarised current, e.g. spin torque effect
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/10—Magnetoresistive devices
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B2005/0002—Special dispositions or recording techniques
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
- H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
- H01F10/3268—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the exchange coupling being asymmetric, e.g. by use of additional pinning, by using antiferromagnetic or ferromagnetic coupling interface, i.e. so-called spin-valve [SV] structure, e.g. NiFe/Cu/NiFe/FeMn
- H01F10/3272—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the exchange coupling being asymmetric, e.g. by use of additional pinning, by using antiferromagnetic or ferromagnetic coupling interface, i.e. so-called spin-valve [SV] structure, e.g. NiFe/Cu/NiFe/FeMn by use of anti-parallel coupled [APC] ferromagnetic layers, e.g. artificial ferrimagnets [AFI], artificial [AAF] or synthetic [SAF] anti-ferromagnets
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- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Hall/Mr Elements (AREA)
- Magnetic Heads (AREA)
Abstract
Description
発振状態は、その周波数スペクトルにより理解されることが多く、その場合Q値は、Q=f0/Δfで定義される。f0は発振周波数、Δfは周波数スペクトルの発振ピークの半値幅である。
第1の強磁性層と、
前記第1の強磁性層に積層される絶縁層と、
前記絶縁層に積層される第2の強磁性層と、
前記第1及び第2の強磁性層並びに絶縁層の膜面に対して垂直方向に電流を通電する一対の電極と、
を具備し、
前記第1及び第2の強磁性層間の面内において接合抵抗が異なる領域を有することを特徴とする。
図2及び図3を参照して、第1の実施の形態に係る磁性発振素子を説明する。
図4を参照して第2の実施の形態に係る磁性発振素子を説明する。
図5を参照して第3の実施の形態に係る磁性発振素子を説明する。
図6は、本発明の実施例1に係る磁性発振素子の断面図である。この磁性発振素子においては、図6に示されるように、スパッタリング装置を使用してガラス基板41上に成膜し、上部電極43及び下部電極42をフォトリソグラフィー及びイオンミリングにより形成し、積層膜4を電子線リソグラフィー及びイオンミリングにより加工した。
実施例2に係る磁性発振素子においては、まず、実施例1で説明したものと同様の工程でTMR膜を作製し、素子の断面形状が約110nm×150nmの楕円形状となるように加工した。このTMR膜は、Raが14Ωμm2、MR比が110%であった。次に、このTMR膜においてイオンミリングをオーバーエッチングして、側壁へのメタルの再付着による弱ショート素子を作製した。作製された素子は、接合抵抗RAが約5.2Ωμm2、MR比が10%であった。素子に、外部磁場330Oeを第2の強磁性層3の容易軸方向(第1の強磁性層1とは略反平行)に印加し、電流密度4.2×106A/cm2の電流を流すと、周波数4.4GHz付近に発振ピークが確認され、線幅24MHzで、出力310pWが得られた。比較例2に係る磁性発振素子として、接合抵抗RAが12Ω・μm2、MR比が130%のTMR膜を用いて作製したショートしていない約60nm×120nm楕円素子を作製した。この比較例2の磁性発振素子に対して容易軸から10°傾けた方向に外部磁場300Oeを印加して電流密度4.0×106A/cm2の電流を流すと、周波数ピークにおける半値幅が約300MHzで出力が120pWであり、ショートパス(メタルパス)が存在する素子のほうがMR比は、低下しているが、強く発振するために線幅が狭く、即ち、高Q値であり、さらに高出力が得られる。
Claims (4)
- 第1の強磁性層と、
前記第1の強磁性層に積層される絶縁層と、
前記絶縁層に積層される第2の強磁性層と、
前記第1及び第2の強磁性層並びに絶縁層の膜面に対して垂直方向に電流を通電する一対の電極と、
を具備し、
前記第1及び第2の強磁性層間の面内において接合抵抗が異なる領域を有する磁性発振素子。 - 前記第1及び第2の強磁性層並びに絶縁層は、積層方向に垂直な面における断面が端部に向けて先細り形状に形成され、
前記絶縁層は、前記端部付近に接合抵抗が小さいリークパスを備える請求項1に記載の磁性発振素子。 - 前記絶縁膜は、膜厚が異なる領域を有する請求項1に記載の磁性発振素子。
- 前記第1及び第2の強磁性層を電気的に結合するメタルパスをさらに具備する請求項1に記載の磁性発振素子。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/JP2009/066970 WO2011039843A1 (ja) | 2009-09-29 | 2009-09-29 | 磁性発振素子 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPWO2011039843A1 true JPWO2011039843A1 (ja) | 2013-02-21 |
JP5526141B2 JP5526141B2 (ja) | 2014-06-18 |
Family
ID=43825700
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2011533983A Expired - Fee Related JP5526141B2 (ja) | 2009-09-29 | 2009-09-29 | 磁性発振素子 |
Country Status (3)
Country | Link |
---|---|
US (2) | US8553372B2 (ja) |
JP (1) | JP5526141B2 (ja) |
WO (1) | WO2011039843A1 (ja) |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5862242B2 (ja) * | 2011-11-30 | 2016-02-16 | ソニー株式会社 | 記憶素子、記憶装置 |
JP5606482B2 (ja) * | 2012-03-26 | 2014-10-15 | 株式会社東芝 | 磁気ヘッド、磁気ヘッドアセンブリ、磁気記録再生装置及び磁気ヘッドの製造方法 |
US9088243B2 (en) * | 2012-09-10 | 2015-07-21 | Indian Institute Of Technology Bombay | Magnetic field feedback based spintronic oscillator |
US8779824B2 (en) * | 2012-12-17 | 2014-07-15 | Qualcomm Incorporated | Clock distribution using MTJ sensing |
JP6135269B2 (ja) * | 2013-04-18 | 2017-05-31 | Tdk株式会社 | 発振器、整流器および送受信装置 |
JP6405864B2 (ja) * | 2013-10-17 | 2018-10-17 | Tdk株式会社 | 磁気抵抗効果発振器 |
US9336797B2 (en) | 2014-05-29 | 2016-05-10 | HGST Netherlands B.V. | Extended spin torque oscillator |
JP2016081551A (ja) * | 2014-10-21 | 2016-05-16 | 株式会社東芝 | スピントルク発振素子、及びこれを用いた高周波アシスト磁気記録ヘッド |
US9196271B1 (en) * | 2014-10-21 | 2015-11-24 | Kabushiki Kaisha Toshiba | Spin-torque oscillation element and microwave-assisted magnetic recording head using the same |
US10110165B2 (en) | 2016-05-19 | 2018-10-23 | Seagate Technology Llc | Solid state microwave generator |
US10601368B2 (en) * | 2016-05-19 | 2020-03-24 | Seagate Technology Llc | Solid state microwave generator |
US10957962B2 (en) | 2016-11-07 | 2021-03-23 | Tdk Corporation | Magnetoresistive effect device |
JPWO2018116656A1 (ja) * | 2016-12-20 | 2019-11-14 | Tdk株式会社 | 磁気抵抗効果デバイス |
JP2019102799A (ja) * | 2017-12-05 | 2019-06-24 | Tdk株式会社 | 磁気抵抗効果素子 |
Family Cites Families (18)
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US4492997A (en) * | 1980-11-28 | 1985-01-08 | Hitachi, Ltd. | Reproducing and amplifying circuit for magnetoresistive head |
US6021065A (en) * | 1996-09-06 | 2000-02-01 | Nonvolatile Electronics Incorporated | Spin dependent tunneling memory |
US5966012A (en) * | 1997-10-07 | 1999-10-12 | International Business Machines Corporation | Magnetic tunnel junction device with improved fixed and free ferromagnetic layers |
US6005753A (en) * | 1998-05-29 | 1999-12-21 | International Business Machines Corporation | Magnetic tunnel junction magnetoresistive read head with longitudinal and transverse bias |
US6667862B2 (en) * | 2001-02-20 | 2003-12-23 | Carnegie Mellon University | Magnetoresistive read head having permanent magnet on top of magnetoresistive element |
US6628478B2 (en) * | 2001-04-17 | 2003-09-30 | Hitachi Global Storage Technologies Netherlands B.V. | Write head with all metallic laminated pole pieces with thickness differential |
JP2004200245A (ja) * | 2002-12-16 | 2004-07-15 | Nec Corp | 磁気抵抗素子及び磁気抵抗素子の製造方法 |
JP4677589B2 (ja) * | 2005-03-18 | 2011-04-27 | 独立行政法人科学技術振興機構 | 伝送回路一体型マイクロ波発生素子並びにマイクロ波検出方法、マイクロ波検出回路、マイクロ波検出素子及び伝送回路一体型マイクロ波検出素子 |
JP4098786B2 (ja) | 2005-03-31 | 2008-06-11 | 株式会社東芝 | 磁気センサおよび磁気記録再生装置 |
JP4585353B2 (ja) | 2005-03-31 | 2010-11-24 | 株式会社東芝 | 磁性発振素子、磁気センサ、磁気ヘッドおよび磁気再生装置 |
WO2008101545A1 (en) * | 2007-02-21 | 2008-08-28 | Commissariat A L'energie Atomique | Spin-transfer torque oscillator |
JP2008311373A (ja) * | 2007-06-13 | 2008-12-25 | Toshiba Corp | 磁性多層膜通電素子 |
JP5278876B2 (ja) * | 2007-10-31 | 2013-09-04 | 独立行政法人産業技術総合研究所 | マイクロ波発振素子および検出素子 |
JP5036585B2 (ja) | 2008-02-13 | 2012-09-26 | 株式会社東芝 | 磁性発振素子、この磁性発振素子を有する磁気ヘッド、および磁気記録再生装置 |
FR2939256B1 (fr) | 2008-12-01 | 2011-06-17 | Commissariat Energie Atomique | Oscillateur radiofrequence a vanne de spin ou a jonction tunnel |
US8432644B2 (en) * | 2009-06-25 | 2013-04-30 | HGST Netherlands B.V. | Spin torque oscillator sensor enhanced by magnetic anisotropy |
US8604886B2 (en) * | 2010-12-20 | 2013-12-10 | Intel Corporation | Spin torque oscillator having multiple fixed ferromagnetic layers or multiple free ferromagnetic layers |
US8198919B1 (en) * | 2011-02-23 | 2012-06-12 | The Regengs of the University of California | Spin transfer torque triad for non-volatile logic gates |
-
2009
- 2009-09-29 WO PCT/JP2009/066970 patent/WO2011039843A1/ja active Application Filing
- 2009-09-29 JP JP2011533983A patent/JP5526141B2/ja not_active Expired - Fee Related
-
2012
- 2012-03-26 US US13/430,074 patent/US8553372B2/en active Active
-
2013
- 2013-06-20 US US13/923,062 patent/US8982514B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
JP5526141B2 (ja) | 2014-06-18 |
US8982514B2 (en) | 2015-03-17 |
US20120218667A1 (en) | 2012-08-30 |
US8553372B2 (en) | 2013-10-08 |
US20130278346A1 (en) | 2013-10-24 |
WO2011039843A1 (ja) | 2011-04-07 |
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