JPWO2011016360A1 - 電力変換装置 - Google Patents
電力変換装置 Download PDFInfo
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- JPWO2011016360A1 JPWO2011016360A1 JP2011525856A JP2011525856A JPWO2011016360A1 JP WO2011016360 A1 JPWO2011016360 A1 JP WO2011016360A1 JP 2011525856 A JP2011525856 A JP 2011525856A JP 2011525856 A JP2011525856 A JP 2011525856A JP WO2011016360 A1 JPWO2011016360 A1 JP WO2011016360A1
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- electrode
- conductor
- power conversion
- terminal
- substantially flat
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Abstract
Description
まず、図1〜図7を参照して、本発明の第1実施形態によるパワーモジュール100の構成について説明する。なお、第1実施形態では、本発明の電力変換装置をパワーモジュール100に適用する場合について説明する。
次に、図8〜図11を参照して、第2実施形態について説明する。この第2実施形態では、上記第1実施形態のソース端子5の上面5aとアノード端子7の上面7aとが電気的に接続されている。
次に、図12〜図14を参照して、第3実施形態について説明する。この第3実施形態では、上記半導体素子2と半導体素子3とが1つずつ設けられる第1実施形態と異なり、半導体素子2と半導体素子3とが、それぞれ、複数設けられている。
次に、図15〜図17を参照して、第4実施形態について説明する。この第4実施形態では、上記第3実施形態の2つの半導体素子52aおよび52bのソース端子55aおよび55b同士を電気的に接続している。また、上記第3実施形態の2つの半導体素子53aおよび53bのアノード端子57aおよび57b同士を電気的に接続している。
次に、図18〜図20を参照して、第5実施形態について説明する。この第5実施形態では、上記第3実施形態の半導体素子52aのソース端子55a、半導体素子52bのソース端子55b、半導体素子53aのアノード端子57a、および、半導体素子53bのアノード端子57bを電気的に接続している。
次に、図21〜図23を参照して、第6実施形態について説明する。この第6実施形態では、ドレイン・カソード端子6が柱形状に形成されている上記第1〜第5実施形態と異なり、ドレイン・カソード端子61がケース状(枠状)に形成されている。
次に、図24〜図26を参照して、第7実施形態について説明する。この第7実施形態では、上記第6実施形態のソース端子5の上面5aとアノード端子7の上面7aとが電気的に接続されている。
次に、図27〜図29を参照して、第8実施形態について説明する。この第8実施形態では、上記第4実施形態の柱形状のドレイン・カソード端子6の代わりに、上記第6実施形態のケース状(枠状)のドレイン・カソード端子61が用いられている。
次に、図30〜図32を参照して、第9実施形態について説明する。この第9実施形態では、上記第5実施形態の四角柱形状のドレイン・カソード端子6の代わりに、上記第7実施形態のケース状(枠状)のドレイン・カソード端子62が用いられている。
次に、図33〜図35を参照して、第10実施形態について説明する。この第10実施形態では、上記第6実施形態のドレイン・カソード端子61に、段差部64aおよび64bが設けられている。
次に、図36〜図38を参照して、第11実施形態について説明する。この第11実施形態では、上記パワーモジュール本体部が、ピン状(円柱形状)に形成されている金属端子を介して配線基板に取り付けられている第1実施形態と異なり、パワーモジュール本体部100lが弾性変形可能な接続用電極71を介して配線基板21aに取り付けられている。
次に、図39〜図42を参照して、第12実施形態について説明する。この第12実施形態では、上記一対の金属板の凸部にワイヤー状金属が接続されている第11実施形態と異なり、平板状の一対の金属板76および77に略U字形状に形成されたワイヤー状金属78が接合されている。
Claims (24)
- 電極を有する複数の電力変換用半導体素子と、
前記複数の電力変換用半導体素子の電極のうち、同電位の複数の前記電極同士を電気的に接続するとともに、前記複数の電力変換用半導体素子よりも上方の位置に、外部との電気的接続をとるための略平坦な上面を有する電極接続用導体部と、
前記電力変換用半導体素子を覆う樹脂からなる封止材とを備え、
前記電力変換用半導体素子と前記封止材とにより電力変換装置本体部が構成され、
前記電力変換装置本体部の上面において前記電極接続用導体部の略平坦な上面を露出させるように構成されている、電力変換装置。 - 前記電極接続用導体部は、前記複数の電力変換用半導体素子の上面に配置された同電位の複数の前記電極同士、または、前記複数の電力変換用半導体素子の下面に配置された同電位の複数の前記電極同士の少なくとも一方を電気的に接続するように構成されている、請求項1に記載の電力変換装置。
- 前記電極接続用導体部は、
前記複数の電力変換用半導体素子の上面側に配置され、前記複数の電力変換用半導体素子の上面に位置する複数の電極に電気的に接続されて上方に延びるとともに、略平坦な上面を有する複数の第1電極用導体と、
前記複数の第1電極用導体のうち、同電位の前記第1電極用導体の略平坦な上面同士を接続するように前記同電位の第1電極用導体の上面上に配置され、前記外部との電気的接続をとるための略平坦な上面を有する第1接続用導体とを含む、請求項2に記載の電力変換装置。 - 前記第1接続用導体は、前記同電位の複数の第1電極用導体の略平坦な上面に跨るように配置された第1金属板からなる、請求項3に記載の電力変換装置。
- 前記封止材は、前記封止材の上面において、前記第1接続用導体の前記外部との電気的接続をとるための略平坦な上面を露出させるように構成されている、請求項3または4に記載の電力変換装置。
- 前記第1電極用導体は、上方に延びる柱形状を有するとともに、前記柱形状を有する前記第1電極用導体の上面が略平坦に形成されている、請求項3〜5のいずれか1項に記載の電力変換装置。
- 前記電極接続用導体部は、
前記複数の電力変換用半導体素子の下面側に配置され、前記複数の電力変換用半導体素子の下面に位置する複数の前記電極のうち、同電位の前記電極同士を接続する第2電極用導体と、
前記第2電極用導体に電気的に接続されるとともに、前記複数の電力変換用半導体素子よりも上方に延びるように配置され、前記外部との電気的接続をとるための略平坦な上面を有する第2接続用導体とを含む、請求項2〜6のいずれか1項に記載の電力変換装置。 - 前記第2接続用導体は、上方に延びる柱形状を有するとともに、前記柱形状を有する前記第2接続用導体の上面が略平坦に形成されている、請求項7に記載の電力変換装置。
- 前記電力変換装置本体部は、前記電極接続用導体部をさらに含み、
前記柱形状を有する第2接続用導体は、前記電力変換装置本体部の端部近傍に配置されている、請求項8に記載の電力変換装置。 - 前記封止材は、前記封止材の上面において、前記第2接続用導体の前記外部との電気的接続をとるための略平坦な上面を露出させるように構成されている、請求項7〜9のいずれか1項に記載の電力変換装置。
- 前記電極接続用導体部は、
前記複数の電力変換用半導体素子の上面に位置する複数の電極に電気的に接続され、略平坦な上面を有する複数の第1電極用導体と、
前記複数の第1電極用導体のうち、同電位の前記第1電極用導体の上面同士を接続するように前記同電位の第1電極用導体の上面上に配置され、前記外部との電気的接続をとるための略平坦な上面を有する第1接続用導体と、
前記複数の電力変換用半導体素子の下面側に配置され、前記複数の電力変換用半導体素子の下面に位置する複数の前記電極のうち、同電位の前記電極同士を接続する第2電極用導体と、
前記第2電極用導体に電気的に接続されるとともに、前記複数の電力変換用半導体素子よりも上方に延びるように配置され、前記外部との電気的接続をとるための略平坦な上面を有する第2接続用導体とを含み、
前記第1接続用導体の略平坦な上面と、前記第2接続用導体の略平坦な上面とは、互いに略同じ高さを有する、請求項2〜10のいずれか1項に記載の電力変換装置。 - 前記電極を有する複数の電力変換用半導体素子は、
前記電極としての制御電極と第1電極と第2電極とを有する電圧駆動型トランジスタ素子と、
前記電極としての第1ダイオード電極と第2ダイオード電極とを有する還流ダイオード素子とを含み、
前記電極接続用導体部は、前記電圧駆動型トランジスタ素子と、前記還流ダイオード素子との少なくとも一方の同電位の複数の前記電極同士を電気的に接続するとともに、前記電圧駆動型トランジスタ素子および前記還流ダイオード素子の上方の位置に、前記外部との電気的接続をとるための略平坦な上面を有するように構成されている、請求項1〜11のいずれか1項に記載の電力変換装置。 - 前記電極接続用導体部は、
前記電圧駆動型トランジスタ素子の上面に位置する前記第1電極に電気的に接続されるとともに、上方に延びる柱形状を有するトランジスタ電極用導体と、
前記還流ダイオード素子の上面に位置する前記第1ダイオード電極に電気的に接続されるとともに、上方に延びる柱形状を有するダイオード電極用導体と、
同電位の前記トランジスタ電極用導体および前記ダイオード電極用導体の略平坦な上面同士を接続するように、前記同電位の前記トランジスタ電極用導体および前記ダイオード電極用導体の上面上に配置され、前記外部との電気的接続をとるための略平坦な上面を有する第1接続用導体とを含む、請求項12に記載の電力変換装置。 - 前記電圧駆動型トランジスタ素子および前記還流ダイオード素子は、それぞれ、複数設けられており、
前記電極接続用導体部は、
複数の前記電圧駆動型トランジスタ素子の上面に位置する複数の前記第1電極にそれぞれ電気的に接続されるとともに、上方に延びる柱形状を有する複数のトランジスタ電極用導体と、
複数の前記還流ダイオード素子の上面に位置する複数の前記第1ダイオード電極にそれぞれ電気的に接続されるとともに、上方に延びる柱形状を有する複数のダイオード電極用導体と、
同電位の複数の前記トランジスタ電極用導体の上面同士と、同電位の複数の前記ダイオード電極用導体の上面同士との少なくとも一方を電気的に接続するように配置され、前記外部との電気的接続をとるための略平坦な上面を有する第1接続用導体とを含む、請求項12に記載の電力変換装置。 - 前記電極接続用導体部は、
前記複数の電力変換用半導体素子の下面側に配置され、前記電圧駆動型トランジスタ素子の第2電極と、前記還流ダイオード素子の第2ダイオード電極とに電気的に接続される共通の第2金属板からなる第2電極用導体と、
前記第2電極用導体に電気的に接続されるとともに、前記電圧駆動型トランジスタ素子および前記還流ダイオード素子よりも上方に延びるように配置され、略平坦な上面を有する柱形状の第2接続用導体とを含む、請求項12〜14のいずれか1項に記載の電力変換装置。 - 前記電圧変換用半導体素子と前記電極接続用導体部と前記封止材とを含む電力変換装置本体部をさらに備え、
前記封止材は、電力変換装置本体部の外形面を構成するように設けられている、請求項1〜15のいずれか1項に記載の電力変換装置。 - 前記電力変換用半導体素子を取り囲むように設けられたケース部をさらに備え、
前記封止材は、前記電力変換用半導体素子を覆うように、前記ケース部内に充填されている、請求項1〜16のいずれか1項に記載の電力変換装置。 - 前記ケース部は、前記電極接続用導体部を構成するとともに、
前記複数の電力変換用半導体素子の下面側に配置され、前記複数の電力変換用半導体素子の下面に位置する複数の前記電極のうち、同電位の前記電極同士を接続する金属板からなる第2電極用導体と、
前記第2電極用導体に電気的に接続されるとともに、前記複数の電力変換用半導体素子よりも上方に延びるように配置され、前記外部との電気的接続をとるための略平坦な上面を有する枠状の第2接続用導体とを含む、請求項17に記載の電力変換装置。 - 前記電力変換用半導体素子の上面に位置する電極に電気的に接続され、略平坦な上面を有する上面側電極用導体をさらに備え、
前記枠状の第2接続用導体の上面の前記上面側電極用導体に対向する部分には、段差部が設けられている、請求項18に記載の電力変換装置。 - 前記電力変換用半導体素子は、SiCまたはGaNからなる半導体により形成されている、請求項1〜19のいずれか1項に記載の電力変換装置。
- 前記封止材から露出された前記電極接続用導体部の略平坦な上面に電気的に接続される配線基板をさらに備える、請求項1〜20のいずれか1項に記載の電力変換装置。
- 前記封止材から露出された前記電極接続用導体部の略平坦な上面は、弾性変形可能な接続部材を介して前記配線基板と電気的に接続されている、請求項21に記載の電力変換装置。
- 前記弾性変形可能な接続部材は、弾性変形可能なワイヤー状金属を含む、請求項22に記載の電力変換装置。
- 前記弾性変形可能な接続部材は、前記弾性変形可能なワイヤー状金属を挟むように配置された第1接続金属板および第2接続金属板をさらに含み、
前記第1接続金属板は、前記電極接続用導体部の前記外部との電気的接続をとるための略平坦な上面に電気的に接続され、
前記第2接続金属板は、前記配線基板に電気的に接続される、請求項23に記載の電力変換装置。
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JP2011525856A Expired - Fee Related JP5678884B2 (ja) | 2009-08-03 | 2010-07-27 | 電力変換装置 |
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JP (1) | JP5678884B2 (ja) |
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JP5944688B2 (ja) * | 2012-02-22 | 2016-07-05 | ローム株式会社 | パワーモジュール半導体装置 |
KR101482317B1 (ko) * | 2012-10-30 | 2015-01-13 | 삼성전기주식회사 | 단위 전력 모듈 및 이를 포함하는 전력 모듈 패키지 |
US9337163B2 (en) * | 2012-11-13 | 2016-05-10 | General Electric Company | Low profile surface mount package with isolated tab |
US9275970B1 (en) * | 2014-08-13 | 2016-03-01 | Hamilton Sundstrand Corporation | Wire bonds for electronics |
CN107004673B (zh) * | 2014-11-27 | 2020-01-03 | 三菱电机株式会社 | 半导体驱动装置 |
JP6300751B2 (ja) * | 2015-03-25 | 2018-03-28 | 三菱電機株式会社 | 半導体装置 |
JP6399962B2 (ja) * | 2015-04-16 | 2018-10-03 | 三菱電機株式会社 | 半導体装置 |
CN106328621A (zh) * | 2015-07-03 | 2017-01-11 | 国网智能电网研究院 | 垂直连接型功率模块 |
JP7260278B2 (ja) | 2018-10-19 | 2023-04-18 | 現代自動車株式会社 | 半導体サブアセンブリー及び半導体パワーモジュール |
JP7308139B2 (ja) * | 2019-12-25 | 2023-07-13 | 株式会社日立製作所 | パワー半導体モジュール、および電力変換装置 |
JP2022165445A (ja) | 2021-04-20 | 2022-11-01 | 株式会社東芝 | 半導体装置 |
EP4123699A1 (en) * | 2021-07-22 | 2023-01-25 | Nexperia B.V. | A semiconductor device and a method of manufacturing of a semiconductor device |
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JP2000102253A (ja) * | 1998-09-25 | 2000-04-07 | Hitachi Ltd | 電力変換装置 |
JP2005051130A (ja) * | 2003-07-31 | 2005-02-24 | Nec Electronics Corp | リードレスパッケージ型半導体装置とその製造方法 |
JP2005217072A (ja) * | 2004-01-28 | 2005-08-11 | Renesas Technology Corp | 半導体装置 |
JP2007273884A (ja) * | 2006-03-31 | 2007-10-18 | Mitsubishi Electric Corp | 半導体装置、半導体モジュールおよび半導体モジュールの製造方法 |
WO2008090734A1 (ja) * | 2007-01-22 | 2008-07-31 | Mitsubishi Electric Corporation | 電力用半導体装置 |
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JP3261965B2 (ja) | 1996-02-21 | 2002-03-04 | 富士電機株式会社 | 半導体装置 |
JP3383588B2 (ja) * | 1998-08-04 | 2003-03-04 | 株式会社東芝 | 電力変換装置 |
JP4826426B2 (ja) | 2006-10-20 | 2011-11-30 | 株式会社デンソー | 半導体装置 |
JP4634497B2 (ja) * | 2008-11-25 | 2011-02-16 | 三菱電機株式会社 | 電力用半導体モジュール |
-
2010
- 2010-07-27 JP JP2011525856A patent/JP5678884B2/ja not_active Expired - Fee Related
- 2010-07-27 WO PCT/JP2010/062564 patent/WO2011016360A1/ja active Application Filing
- 2010-07-27 CN CN201080034372.6A patent/CN102484109B/zh not_active Expired - Fee Related
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2012
- 2012-02-02 US US13/364,606 patent/US8546926B2/en not_active Expired - Fee Related
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JPH05110215A (ja) * | 1991-10-14 | 1993-04-30 | Okuma Mach Works Ltd | パワー配線基板 |
JP2000102253A (ja) * | 1998-09-25 | 2000-04-07 | Hitachi Ltd | 電力変換装置 |
JP2005051130A (ja) * | 2003-07-31 | 2005-02-24 | Nec Electronics Corp | リードレスパッケージ型半導体装置とその製造方法 |
JP2005217072A (ja) * | 2004-01-28 | 2005-08-11 | Renesas Technology Corp | 半導体装置 |
JP2007273884A (ja) * | 2006-03-31 | 2007-10-18 | Mitsubishi Electric Corp | 半導体装置、半導体モジュールおよび半導体モジュールの製造方法 |
WO2008090734A1 (ja) * | 2007-01-22 | 2008-07-31 | Mitsubishi Electric Corporation | 電力用半導体装置 |
Also Published As
Publication number | Publication date |
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US8546926B2 (en) | 2013-10-01 |
CN102484109B (zh) | 2014-12-10 |
US20120211767A1 (en) | 2012-08-23 |
WO2011016360A1 (ja) | 2011-02-10 |
JP5678884B2 (ja) | 2015-03-04 |
CN102484109A (zh) | 2012-05-30 |
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