JPWO2010067778A1 - 窒化タンタル膜の形成方法及びその成膜装置 - Google Patents
窒化タンタル膜の形成方法及びその成膜装置 Download PDFInfo
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- tantalum
- tantalum nitride
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- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 title claims abstract description 70
- 238000000034 method Methods 0.000 title claims abstract description 53
- 239000007789 gas Substances 0.000 claims abstract description 124
- 239000000758 substrate Substances 0.000 claims abstract description 73
- 239000006200 vaporizer Substances 0.000 claims abstract description 34
- 239000012495 reaction gas Substances 0.000 claims abstract description 33
- 150000001875 compounds Chemical class 0.000 claims abstract description 31
- 239000007788 liquid Substances 0.000 claims abstract description 31
- 229910052715 tantalum Inorganic materials 0.000 claims abstract description 27
- 239000002994 raw material Substances 0.000 claims abstract description 25
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims abstract description 25
- 239000007983 Tris buffer Substances 0.000 claims abstract description 19
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 12
- 125000004433 nitrogen atom Chemical group N* 0.000 claims abstract description 9
- 239000003054 catalyst Substances 0.000 claims description 22
- 230000015572 biosynthetic process Effects 0.000 claims description 19
- 238000010438 heat treatment Methods 0.000 claims description 13
- 229910052751 metal Inorganic materials 0.000 claims description 13
- 239000002184 metal Substances 0.000 claims description 13
- 239000010949 copper Substances 0.000 claims description 12
- OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 claims description 10
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 9
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 8
- 229910052802 copper Inorganic materials 0.000 claims description 7
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 6
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 6
- 150000002429 hydrazines Chemical class 0.000 claims description 6
- 229910001873 dinitrogen Inorganic materials 0.000 claims description 5
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 3
- 239000000956 alloy Substances 0.000 claims description 3
- 229910045601 alloy Inorganic materials 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 229910017052 cobalt Inorganic materials 0.000 claims description 3
- 239000010941 cobalt Substances 0.000 claims description 3
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 3
- 229910052759 nickel Inorganic materials 0.000 claims description 3
- 150000004767 nitrides Chemical class 0.000 claims description 3
- 229910052707 ruthenium Inorganic materials 0.000 claims description 3
- 239000010936 titanium Substances 0.000 claims description 3
- 229910052719 titanium Inorganic materials 0.000 claims description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 3
- 229910052721 tungsten Inorganic materials 0.000 claims description 3
- 239000010937 tungsten Substances 0.000 claims description 3
- 230000007246 mechanism Effects 0.000 claims description 2
- 239000012808 vapor phase Substances 0.000 claims description 2
- 239000010408 film Substances 0.000 description 134
- 230000008569 process Effects 0.000 description 10
- 230000004888 barrier function Effects 0.000 description 9
- 238000000231 atomic layer deposition Methods 0.000 description 6
- 230000003197 catalytic effect Effects 0.000 description 6
- 239000010409 thin film Substances 0.000 description 5
- 229910052736 halogen Inorganic materials 0.000 description 4
- 150000002367 halogens Chemical class 0.000 description 4
- 239000007787 solid Substances 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 239000012159 carrier gas Substances 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- 238000011109 contamination Methods 0.000 description 3
- VSLPMIMVDUOYFW-UHFFFAOYSA-N dimethylazanide;tantalum(5+) Chemical compound [Ta+5].C[N-]C.C[N-]C.C[N-]C.C[N-]C.C[N-]C VSLPMIMVDUOYFW-UHFFFAOYSA-N 0.000 description 3
- 239000011261 inert gas Substances 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 238000001179 sorption measurement Methods 0.000 description 3
- 238000005979 thermal decomposition reaction Methods 0.000 description 3
- 238000000137 annealing Methods 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 238000011049 filling Methods 0.000 description 2
- 238000004050 hot filament vapor deposition Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000010926 purge Methods 0.000 description 2
- 238000009834 vaporization Methods 0.000 description 2
- 230000008016 vaporization Effects 0.000 description 2
- DIIIISSCIXVANO-UHFFFAOYSA-N 1,2-Dimethylhydrazine Chemical compound CNNC DIIIISSCIXVANO-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 238000010504 bond cleavage reaction Methods 0.000 description 1
- 230000005587 bubbling Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- QKIUAMUSENSFQQ-UHFFFAOYSA-N dimethylazanide Chemical compound C[N-]C QKIUAMUSENSFQQ-UHFFFAOYSA-N 0.000 description 1
- 150000002222 fluorine compounds Chemical class 0.000 description 1
- 238000002309 gasification Methods 0.000 description 1
- 230000008642 heat stress Effects 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 239000011344 liquid material Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000007567 mass-production technique Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 239000002052 molecular layer Substances 0.000 description 1
- HDZGCSFEDULWCS-UHFFFAOYSA-N monomethylhydrazine Chemical compound CNN HDZGCSFEDULWCS-UHFFFAOYSA-N 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 238000010298 pulverizing process Methods 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- -1 tantalum halide compounds Chemical class 0.000 description 1
- 239000013077 target material Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
- H01L21/28556—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table by chemical means, e.g. CVD, LPCVD, PECVD, laser CVD
- H01L21/28562—Selective deposition
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/34—Nitrides
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
- C23C16/4481—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation using carrier gas in contact with the source material
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- Condensed Matter Physics & Semiconductors (AREA)
- Inorganic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical Vapour Deposition (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
Description
本比較例では、ALD法に従って窒化タンタル膜を形成し、実施例1で得られた窒化タンタル膜と比較した。
11 気化器 12 液体マスフローコントローラー
13 容器 13a 液体原料源
13b ガスボンベ 13c マスフローコントローラー
13d 圧力計 14 真空ポンプ
15a ガスボンベ 15b マスフローコントローラー
101 基板ステージ 102 触媒線
111 ガス充填ボンベ L1〜L4 ライン
V1〜V10 バルブ S 基板
Claims (10)
- 基板上に、反応ガスとして窒素原子含有化合物ガスを供給し、原料ガスとして、t−アミルイミド−トリス(ジメチルアミド)タンタルを40〜80℃に加熱して液化させ、この液体を気化器内で100℃以上に加熱してガス化したt−アミルイミド−トリス(ジメチルアミド)タンタルガスを供給し、基板上に窒化タンタル膜を形成することを特徴とする窒化タンタル膜の形成方法。
- 基板上に、反応ガスとして窒素原子含有化合物ガスを継続的に供給しながら、原料ガスとして、t−アミルイミド−トリス(ジメチルアミド)タンタルを40〜80℃に加熱して液化させ、この液体を気化器内で100℃以上に加熱してガス化したt−アミルイミド−トリス(ジメチルアミド)タンタルガスをパルス的に供給し、基板上に窒化タンタル膜を形成することを特徴とする窒化タンタル膜の形成方法。
- 前記窒化タンタル膜の形成方法が、触媒又は熱若しくはプラズマを利用することを特徴とする請求項1又は2に記載の窒化タンタル膜の形成方法。
- 前記窒素原子含有化合物ガスが、窒素ガス、アンモニアガス、ヒドラジンガス、及びヒドラジン誘導体ガスから選ばれたガスであることを特徴とする請求項1〜3のいずれか1項に記載の窒化タンタル膜の形成方法。
- 基板上に窒化タンタル膜を形成し、この膜上に銅、タングステン、アルミニウム、タンタル、チタン、ルテニウム、コバルト、ニッケル、又はそれらの合金からなる金属の膜を形成する際に、窒化タンタル膜を、反応ガスとして窒素原子含有化合物ガスを供給しながら、原料ガスとして、t−アミルイミド−トリス(ジメチルアミド)タンタルを40〜80℃に加熱して液化させ、この液体を気化器内で100℃以上に加熱してガス化したt−アミルイミド−トリス(ジメチルアミド)タンタルガスをパルス的に供給して形成することを特徴とする窒化タンタル膜の形成方法。
- 反応ガスの活性種への変換手段として触媒又は熱若しくはプラズマを利用し、基板上に反応ガスとして窒素ガス、アンモニアガス、ヒドラジンガス、及びヒドラジン誘導体ガスから選ばれたガスを供給しながら、t−アミルイミド−トリス(ジメチルアミド)タンタルを40〜80℃に加熱して液化させ、この液体を気化器内で100℃以上に加熱してガス化した原料ガスをパルス的に供給し、基板上に窒化タンタル膜を形成することを特徴とする窒化タンタル膜の形成方法。
- 触媒又は熱若しくはプラズマを利用する気相成膜が可能な真空処理室をもつ成膜装置であって、真空処理室内に載置される基板上に反応ガスを供給する反応ガス供給ラインと、原料ガス形成用のt−アミルイミド−トリス(ジメチルアミド)タンタルを40〜80℃に加熱して液化させるための容器と、液化されたt−アミルイミド−トリス(ジメチルアミド)タンタルを100℃以上に加熱してガス化させるための気化器と、前記気化器への液体の供給量を調節するための液体マスフローコントローラーと、前記気化器で得られたガスを前記真空処理室内に載置される基板上に供給する原料ガス供給ラインとを有することを特徴とする成膜装置。
- 請求項7記載の成膜装置において、さらに前記気化器が真空処理室に直接接続されていることを特徴とする成膜装置。
- 請求項7又は8記載の成膜装置において、さらに前記反応ガスの活性種への変換触媒線が反応ガス供給ラインに設置されていることを特徴とする成膜装置。
- 請求項9記載の成膜装置において、さらに前記触媒線の加熱機構を備えていることを特徴とする成膜装置。
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JP (1) | JP5409652B2 (ja) |
KR (1) | KR101271869B1 (ja) |
TW (1) | TWI431146B (ja) |
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US8815344B2 (en) * | 2012-03-14 | 2014-08-26 | Applied Materials, Inc. | Selective atomic layer depositions |
US9460932B2 (en) | 2013-11-11 | 2016-10-04 | Applied Materials, Inc. | Surface poisoning using ALD for high selectivity deposition of high aspect ratio features |
KR102200185B1 (ko) | 2014-10-30 | 2021-01-08 | (주)아모레퍼시픽 | 세정제 조성물 |
JP2016134569A (ja) * | 2015-01-21 | 2016-07-25 | 株式会社東芝 | 半導体製造装置 |
JP6920082B2 (ja) * | 2017-03-17 | 2021-08-18 | 株式会社Kokusai Electric | 半導体装置の製造方法、基板処理装置およびプログラム |
JP7203670B2 (ja) * | 2019-04-01 | 2023-01-13 | 東京エレクトロン株式会社 | 成膜方法及び成膜装置 |
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US5989999A (en) * | 1994-11-14 | 1999-11-23 | Applied Materials, Inc. | Construction of a tantalum nitride film on a semiconductor wafer |
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US6410433B1 (en) * | 1999-04-27 | 2002-06-25 | Tokyo Electron Limited | Thermal CVD of TaN films from tantalum halide precursors |
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JP3963078B2 (ja) * | 2000-12-25 | 2007-08-22 | 株式会社高純度化学研究所 | ターシャリーアミルイミドトリス(ジメチルアミド)タンタルとその製造方法及びそれを用いたmocvd用原料溶液並びにそれを用いた窒化タンタル膜の形成方法 |
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-
2009
- 2009-12-07 US US13/130,997 patent/US20110318505A1/en not_active Abandoned
- 2009-12-07 WO PCT/JP2009/070482 patent/WO2010067778A1/ja active Application Filing
- 2009-12-07 KR KR1020117015593A patent/KR101271869B1/ko active IP Right Grant
- 2009-12-07 JP JP2010542100A patent/JP5409652B2/ja active Active
- 2009-12-09 TW TW098142067A patent/TWI431146B/zh active
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TW201033392A (en) | 2010-09-16 |
WO2010067778A1 (ja) | 2010-06-17 |
KR101271869B1 (ko) | 2013-06-07 |
JP5409652B2 (ja) | 2014-02-05 |
US20110318505A1 (en) | 2011-12-29 |
TWI431146B (zh) | 2014-03-21 |
KR20110102415A (ko) | 2011-09-16 |
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