JPWO2010041446A1 - 真空処理装置 - Google Patents
真空処理装置 Download PDFInfo
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- JPWO2010041446A1 JPWO2010041446A1 JP2010532819A JP2010532819A JPWO2010041446A1 JP WO2010041446 A1 JPWO2010041446 A1 JP WO2010041446A1 JP 2010532819 A JP2010532819 A JP 2010532819A JP 2010532819 A JP2010532819 A JP 2010532819A JP WO2010041446 A1 JPWO2010041446 A1 JP WO2010041446A1
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- 238000012545 processing Methods 0.000 title claims abstract description 155
- 239000000758 substrate Substances 0.000 claims abstract description 75
- 238000004544 sputter deposition Methods 0.000 claims abstract description 67
- 238000000034 method Methods 0.000 claims abstract description 58
- 238000005229 chemical vapour deposition Methods 0.000 claims description 43
- 230000008569 process Effects 0.000 claims description 40
- 239000000463 material Substances 0.000 claims description 27
- 230000005669 field effect Effects 0.000 claims description 23
- 238000012546 transfer Methods 0.000 claims description 23
- 238000006243 chemical reaction Methods 0.000 claims description 17
- 230000015572 biosynthetic process Effects 0.000 claims description 16
- 229910007541 Zn O Inorganic materials 0.000 claims description 5
- 239000000203 mixture Substances 0.000 claims description 5
- 230000007246 mechanism Effects 0.000 abstract description 27
- 238000004140 cleaning Methods 0.000 abstract description 7
- 230000007723 transport mechanism Effects 0.000 abstract description 6
- 230000000694 effects Effects 0.000 abstract description 5
- 230000002411 adverse Effects 0.000 abstract description 4
- 230000002159 abnormal effect Effects 0.000 abstract description 3
- 238000005260 corrosion Methods 0.000 abstract description 2
- 230000007797 corrosion Effects 0.000 abstract description 2
- 239000010408 film Substances 0.000 description 184
- 239000010410 layer Substances 0.000 description 95
- 229910052751 metal Inorganic materials 0.000 description 18
- 239000002184 metal Substances 0.000 description 18
- 238000005530 etching Methods 0.000 description 17
- 239000007789 gas Substances 0.000 description 13
- 238000004519 manufacturing process Methods 0.000 description 13
- 239000012535 impurity Substances 0.000 description 9
- 230000001681 protective effect Effects 0.000 description 9
- 238000005477 sputtering target Methods 0.000 description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 7
- 229910052814 silicon oxide Inorganic materials 0.000 description 7
- 238000012423 maintenance Methods 0.000 description 6
- 238000000059 patterning Methods 0.000 description 6
- 239000013077 target material Substances 0.000 description 6
- 229910052581 Si3N4 Inorganic materials 0.000 description 5
- 230000004888 barrier function Effects 0.000 description 5
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 5
- 238000009751 slip forming Methods 0.000 description 5
- 238000001039 wet etching Methods 0.000 description 5
- 238000009792 diffusion process Methods 0.000 description 4
- 238000001312 dry etching Methods 0.000 description 4
- 238000010292 electrical insulation Methods 0.000 description 4
- 229910044991 metal oxide Inorganic materials 0.000 description 4
- 150000004706 metal oxides Chemical class 0.000 description 4
- 229920002120 photoresistant polymer Polymers 0.000 description 4
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- 229910004205 SiNX Inorganic materials 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000004380 ashing Methods 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 229910001882 dioxygen Inorganic materials 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 239000011241 protective layer Substances 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 229910001936 tantalum oxide Inorganic materials 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 235000006408 oxalic acid Nutrition 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000005546 reactive sputtering Methods 0.000 description 1
- 230000002040 relaxant effect Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- RUDFQVOCFDJEEF-UHFFFAOYSA-N yttrium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[Y+3].[Y+3] RUDFQVOCFDJEEF-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67161—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
- C23C14/568—Transferring the substrates through a series of coating stations
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/54—Apparatus specially adapted for continuous coating
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
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- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67207—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
- H01L21/6723—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process comprising at least one plating chamber
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
- H01L21/67748—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber horizontal transfer of a single workpiece
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
- H01L21/67751—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber vertical transfer of a single workpiece
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
- H01L21/6776—Continuous loading and unloading into and out of a processing chamber, e.g. transporting belts within processing chambers
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
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- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1222—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer
- H01L27/1225—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
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Abstract
Description
前記横型処理ユニットは、真空状態を維持することが可能であり、基材を水平にした状態で前記基材を処理する。
前記縦型処理ユニットは、真空状態を維持することが可能であり、前記基材を立てた状態で前記基材を処理する。
変換室は、真空状態を維持することが可能であり、前記横型処理ユニット及び前記縦型処理ユニットに接続され、前記基材の姿勢を変換するために設けられる。
前記横型処理ユニットは、真空状態を維持することが可能であり、基材を水平にした状態で前記基材を処理する。
前記縦型処理ユニットは、真空状態を維持することが可能であり、前記基材を立てた状態で前記基材を処理する。
変換室は、真空状態を維持することが可能であり、前記横型処理ユニット及び前記縦型処理ユニットに接続され、前記基材の姿勢を変換するために設けられる。
15F…IGZO膜
15…活性層
16F…ストッパ層膜
16…ストッパ層
50…クラスタ型処理ユニット
52…CVD室
53…搬送室
60、60A、60B…インライン型処理ユニット
61…バッファ室
62…スパッタ室
70、170…姿勢変換室
100、200、300、400…真空処理装置
150…電界効果型トランジスタ
Claims (10)
- 真空状態を維持することが可能であり、基材を水平にした状態で前記基材を処理する横型処理ユニットと、
真空状態を維持することが可能であり、前記基材を立てた状態で前記基材を処理する縦型処理ユニットと、
真空状態を維持することが可能であり、前記横型処理ユニット及び前記縦型処理ユニットに接続され、前記基材の姿勢を変換するための変換室と
を具備する真空処理装置。 - 請求項1に記載の真空処理装置であって、
前記横型処理ユニットは、
第1の膜を形成するための第1の成膜室と、
前記第1の成膜室及び前記変換室に接続され、前記第1の成膜室及び前記変換室に前記基材を搬入し、かつ、前記第1の成膜室及び前記変換室から前記基材を搬出することが可能な搬送室とを有し、
前記縦型処理ユニットは、
前記第1の膜とは異なる第2の膜を形成するための第2の成膜室と、
前記第2の成膜室と前記変換室に接続されたバッファ室と
を有する真空処理装置。 - 請求項2に記載の真空処理装置であって、
前記横型処理ユニットは、前記第1の成膜室を含む複数の処理室が前記搬送室の周囲に設けられて構成されるクラスタ型処理ユニットである真空処理装置。 - 請求項2に記載の真空処理装置であって、
前記縦型処理ユニットは、前記第2の成膜室を含む複数の処理室がライン状に配置されて構成されるインライン型処理ユニットである真空処理装置。 - 請求項2に記載の真空処理装置であって、
前記第1の成膜室は、CVD(Chemical Vapor Deposition)室である真空処理装置。 - 請求項5に記載の真空処理装置であって、
前記CVD室は、電界効果型トランジスタの、ゲート絶縁膜、及び、前記ゲート絶縁膜上に形成された活性層に対するエッチャントから前記活性層を保護する、前記活性層上に形成されたストッパ層の少なくとも一方を形成するものである真空処理装置。 - 請求項2に記載の真空処理装置であって、
前記第2の成膜室は、スパッタ室である真空処理装置。 - 請求項1に記載の真空処理装置であって、
前記縦型処理ユニットは、
電界効果型トランジスタの、In−Ga−Zn−O系組成を有する活性層をスパッタリングにより形成し、前記活性層の上に、前記活性層に対するエッチャントから前記活性層を保護するストッパ層をスパッタリングにより形成するためのスパッタ室を有する真空処理装置。 - 請求項1に記載の真空処理装置であって、
前記縦型処理ユニットは、
電界効果型トランジスタの、In−Ga−Zn−O系組成を有する活性層をスパッタリングにより形成するための第1のスパッタ室と、
前記活性層の上に、前記活性層に対するエッチャントから前記活性層を保護するストッパ層をスパッタリングにより形成するための第2のスパッタ室と
を有する真空処理装置。 - 請求項1に記載の真空処理装置であって、
前記縦型処理ユニットは、複数の前記インライン型処理ユニットを含む真空処理装置。
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JP2010532819A JP5142414B2 (ja) | 2008-10-08 | 2009-10-07 | 真空処理装置 |
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JP2008262085 | 2008-10-08 | ||
JP2008262085 | 2008-10-08 | ||
JP2010532819A JP5142414B2 (ja) | 2008-10-08 | 2009-10-07 | 真空処理装置 |
PCT/JP2009/005227 WO2010041446A1 (ja) | 2008-10-08 | 2009-10-07 | 真空処理装置 |
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JPWO2010041446A1 true JPWO2010041446A1 (ja) | 2012-03-08 |
JP5142414B2 JP5142414B2 (ja) | 2013-02-13 |
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US (1) | US20110180402A1 (ja) |
JP (1) | JP5142414B2 (ja) |
KR (1) | KR20110051247A (ja) |
CN (1) | CN102177577B (ja) |
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WO2011059750A2 (en) * | 2009-10-28 | 2011-05-19 | Applied Materials, Inc. | Chamber for pecvd |
US20120043198A1 (en) * | 2010-08-18 | 2012-02-23 | Semiconductor Energy Laboratory Co., Ltd. | Film formation apparatus and film formation method |
US8541266B2 (en) * | 2011-04-01 | 2013-09-24 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
CN102683193B (zh) * | 2012-03-30 | 2014-07-23 | 京东方科技集团股份有限公司 | 晶体管的制作方法、晶体管、阵列基板以及显示装置 |
US20160359080A1 (en) * | 2015-06-07 | 2016-12-08 | Solarcity Corporation | System, method and apparatus for chemical vapor deposition |
JP7011947B2 (ja) * | 2018-01-29 | 2022-02-10 | 東京エレクトロン株式会社 | アッシング装置、アッシング方法及びコンピュータ読み取り可能な記録媒体 |
CN109468600B (zh) * | 2018-12-25 | 2021-03-05 | 合肥鑫晟光电科技有限公司 | 溅射系统和沉积方法 |
CN113073305A (zh) * | 2020-01-06 | 2021-07-06 | 重庆康佳光电技术研究院有限公司 | 一种沉积设备及其沉积方法 |
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- 2009-10-07 KR KR1020117005762A patent/KR20110051247A/ko active Search and Examination
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- 2009-10-07 CN CN200980139868.7A patent/CN102177577B/zh active Active
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JPS63217265A (ja) * | 1987-03-06 | 1988-09-09 | Olympus Optical Co Ltd | 半導体イオンセンサの製造方法 |
JPS63153537U (ja) * | 1987-03-27 | 1988-10-07 | ||
JPH01105556A (ja) * | 1987-09-18 | 1989-04-24 | Varian Assoc Inc | モジューラ・ウェーハ処理装置のためのスパッタ・モジュール |
JPH029129A (ja) * | 1988-06-28 | 1990-01-12 | Matsushita Electric Ind Co Ltd | 半導体装置の製造方法 |
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CN102177577A (zh) | 2011-09-07 |
TW201026874A (en) | 2010-07-16 |
US20110180402A1 (en) | 2011-07-28 |
KR20110051247A (ko) | 2011-05-17 |
TWI471447B (zh) | 2015-02-01 |
JP5142414B2 (ja) | 2013-02-13 |
WO2010041446A1 (ja) | 2010-04-15 |
CN102177577B (zh) | 2015-08-26 |
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