JPWO2009144899A1 - 光電変換素子 - Google Patents
光電変換素子 Download PDFInfo
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- JPWO2009144899A1 JPWO2009144899A1 JP2010514355A JP2010514355A JPWO2009144899A1 JP WO2009144899 A1 JPWO2009144899 A1 JP WO2009144899A1 JP 2010514355 A JP2010514355 A JP 2010514355A JP 2010514355 A JP2010514355 A JP 2010514355A JP WO2009144899 A1 JPWO2009144899 A1 JP WO2009144899A1
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Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/20—Light-sensitive devices
- H01G9/2095—Light-sensitive devices comprising a flexible sustrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/20—Light-sensitive devices
- H01G9/2027—Light-sensitive devices comprising an oxide semiconductor electrode
- H01G9/2031—Light-sensitive devices comprising an oxide semiconductor electrode comprising titanium oxide, e.g. TiO2
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/20—Light-sensitive devices
- H01G9/2059—Light-sensitive devices comprising an organic dye as the active light absorbing material, e.g. adsorbed on an electrode or dissolved in solution
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/20—Light-sensitive devices
- H01G9/2068—Panels or arrays of photoelectrochemical cells, e.g. photovoltaic modules based on photoelectrochemical cells
- H01G9/2077—Sealing arrangements, e.g. to prevent the leakage of the electrolyte
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/542—Dye sensitized solar cells
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Hybrid Cells (AREA)
- Photovoltaic Devices (AREA)
- Sealing Battery Cases Or Jackets (AREA)
Abstract
Description
図1は、本発明の光電変換素子の第一実施形態を模式的に示す縦断面図である。図2は、図1において二点鎖線で囲む領域Aを拡大した模式図である。
図6は、本発明の光電変換素子の第二実施形態を模式的に示す断面図である。
次に、本発明の第一実施形態に係る光電変換素子1の製造方法について説明する。
第一基材11及びこの第一基材11の一面11aに配された透明導電膜12からなる第一電極用基板を用意する。構造体50がモジュールである場合には、例えば、第一基材11上に所望なサイズの導電膜12を複数形成する、あるいは第一基材11a上の全面に透明導電膜12を形成し、透明導電膜12にスリットを形成する方法が挙げられる。
第二基材21及びこの第二基材21の一面21aに配された導電膜22からなる第二電極用基板を用意する。なお、第二基材21が導電性である場合、導電膜22がなくてもよい。その後、導電膜22上に触媒23をスパッタ等で成膜する。構造体50がモジュールである場合には、例えば、第二基材21上に所望なサイズの導電膜22を複数形成する、あるいは第二基材21上の全面に導電膜22を形成し、導電膜22にスリットを形成する方法が挙げられる。もしくは、所望なサイズの第二基材21を複数枚用意する。導電膜22及びスリットの形成方法は、第一基材11に透明導電膜12を形成する際と同様である。こうして第二電極20を作製する。
上記で作製した第一電極10と、第二電極20とを電極取り出しのためにずらした状態で対向させ、周囲を封止材40で貼り合わせて袋状にする。
次に、筺体60を作製する。
第二実施形態に係る光電変換素子2の作製方法について説明する。
(第一電極及び第二電極の作製)
10cm角、厚さ0.1mmのITO透明導電PENフィルム(王子トービ社製、商品名:OTEC)2枚を洗浄し、一方の透明導電PENフィルムには触媒としてPtをスパッタで数十nm成膜し、隅に小さい電解液注入穴を設けて第二電極を作製した。
上記のようにして得た第一電極及び第二電極を、電極取り出しのために3mmずらした状態で、周囲5mm程度をホットメルト樹脂(三井デュポン社製、商品名:ハイミラン)で貼り合わせて袋状にした。その後、第二電極の第二基材に設けられた電解液注入穴から電解液を注入した後、UV硬化樹脂(スリーボンド社製)で封止した。次に、両電極にフレキシブルプリント基板を導電性接着剤で貼り合わせて、構造体を作製した。
筺体の第一電極側基板として、12cm角、厚さ3mmの硬質ポリカーボネート基板(以後、PCと呼ぶ)を1枚、筺体の第二電極側基板として、12cm角、厚さ2mmの非結晶性PET(以後、a−PETと呼ぶ)基板を1枚用意した。そのうち筺体のa−PET基板には、エンドミルを用いて板厚の半分程度まで、Φ1mm程度の円柱状の凹部を1cm間隔で基板の内側全面に100個設けた。その後、両基板にはガスバリア層としてシリカを成膜した。また、a−PET基板には、フレキシブルプリント基板を取り出す貫通孔と、変形体の注入穴を設けた。
筺体のa−PET基板には、エンドミルで作製した凹部に、グローブボックス中で乾燥させたモレキュラーシーブスを乾燥剤としてプレスして詰めた後、シリコンオイルで濡らしておいたこと以外は実施例1と同様にして光電変換素子を得た。
第一電極及び第二電極を製造するために、厚さ0.02mmの薄い低アルカリガラス上に、SPD法にてFTO透明導電膜を成膜した導電性基板を用い、一方の導電性基板の上にガラス用高温焼結型ペースト(Solaronix社製、Ti-nanoxide T)を印刷したのち、450℃で焼成し、多孔質酸化チタン層を形成したこと以外は実施例2と同様にして光電変換素子を得た。
第二基板として厚さ0.04mmのチタン箔を用いたこと以外は、実施例3と同様にして構造体を作製した。また、筐体の第二電極側の基板としてアルミ蒸着タイプのガスバリアシートを使用したこと以外は、実施例1と同様にして筺体を作製した。その後、これらの構造体と筺体とを用いて、実施例1と同様にして構造体を筺体内に封止し、光電変換素子を得た。
乾燥剤としてモレキュラーシーブスを実施例2と同様にして筐体の凹部に配したこと以外は、実施例4と同様にして光電変換素子を作製した。
実施例1で作製した構造体のみのものを、比較例1の光電変換素子として作製した。
実施例4で作製した構造体のみのものを、比較例2の光電変換素子として作製した。
光電変換効率の低下率(%)=100×(η0−η)/η0
により算出した。その結果を表5に示す。
Claims (10)
- 構造体と、
前記構造体を内蔵する筺体と、
前記構造体と前記筺体との間に配される変形体と、
を備え、
前記構造体が、
増感色素が担持された多孔質酸化物半導体層を備え、導電性を有した第一電極と、
前記第一電極と対向して配される第二電極と、
前記第一電極と前記第二電極との間の少なくとも一部に配された電解質とを有する、光電変換素子。 - 前記変形体が液体である、請求項1に記載の光電変換素子。
- 前記変形体がゲル状体である、請求項1に記載の光電変換素子。
- 前記変形体がクレーである、請求項1に記載の光電変換素子。
- 前記構造体が、前記変形体中に自由度を有した状態で配置されている、請求項2〜4のいずれか一項に記載の光電変換素子。
- 前記筺体の内側に設けられ前記第一電極に対向する第一基板と、
前記筺体の内側に設けられ前記第二電極に対向する第二基板とをさらに有し、
前記第一電極が第一基材を有し、
前記第二電極が第二基材を有し、
前記一基板及び前記第二基板の少なくとも一方の曲げ強度が、前記構造体に含まれる前記第一基材及び前記第二基材の少なくとも一方の曲げ強度より小さい、請求項1〜5のいずれか一項に記載の光電変換素子。 - 前記変形体の25℃における粘度が、0.02Pa・s以上200Pa・s以下である請求項2〜4のいずれか一項に記載の光電変換素子。
- 前記筺体と前記構造体との間全域に前記変形体が配されている請求項1〜7のいずれか一項に記載の光電変換素子。
- 前記構造体と外部とを電気的に接続する配線が、前記筺体内においてたわむように配されている請求項1〜7のいずれか一項に記載の光電変換素子。
- 前記筐体の内壁と前記構造体との間に乾燥剤が配されている請求項1〜9のいずれか一項に記載の光電変換素子。
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JP5530648B2 (ja) * | 2009-03-26 | 2014-06-25 | 日立造船株式会社 | 光電変換素子の製造方法 |
KR101108187B1 (ko) * | 2010-03-24 | 2012-01-31 | 삼성에스디아이 주식회사 | 염료감응 태양전지 |
JP5953026B2 (ja) * | 2011-10-20 | 2016-07-13 | ローム株式会社 | 色素増感太陽電池の製造方法 |
CN103187178A (zh) * | 2011-12-27 | 2013-07-03 | 造能科技有限公司 | 染料敏化太阳能电池 |
TW201327856A (zh) * | 2011-12-27 | 2013-07-01 | Mke Technology Co Ltd | 染料敏化太陽能電池 |
US20150372248A1 (en) * | 2013-02-06 | 2015-12-24 | Fujikura Ltd. | Dye-sensitized solar cell element |
TWI599764B (zh) * | 2015-10-19 | 2017-09-21 | 國立清華大學 | 多階感測元件 |
EP3496120B1 (en) * | 2016-08-02 | 2023-05-03 | Zeon Corporation | Solar cell module, and method for producing solar cell module |
KR20190027835A (ko) | 2016-08-02 | 2019-03-15 | 니폰 제온 가부시키가이샤 | 태양 전지 모듈 |
KR20190040964A (ko) * | 2016-09-06 | 2019-04-19 | 니폰 제온 가부시키가이샤 | 태양 전지 모듈 |
WO2020059022A1 (ja) * | 2018-09-18 | 2020-03-26 | 株式会社 東芝 | 光電変換素子 |
IT201900000151A1 (it) * | 2019-01-08 | 2020-07-08 | Torino Politecnico | Cella fotovoltaica di terza generazione sigillata in sacco sotto vuoto |
DE102020200053A1 (de) * | 2020-01-06 | 2021-07-08 | Heliatek Gmbh | Verkapselungssystem für ein optoelektronisches Bauelement mit mindestens einer ersten Verkapselung und einer zweiten Verkapselung, optoelektronisches Bauelement mit einem solchen Verkapselungssystem |
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CN102047496A (zh) | 2011-05-04 |
JP5296785B2 (ja) | 2013-09-25 |
KR20100136552A (ko) | 2010-12-28 |
AU2009252642A1 (en) | 2009-12-03 |
US20110120550A1 (en) | 2011-05-26 |
TW201010095A (en) | 2010-03-01 |
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