JPWO2009028426A1 - 電子素子及び電気伝導度制御方法 - Google Patents
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- 238000000034 method Methods 0.000 title claims description 17
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- 150000001875 compounds Chemical class 0.000 claims description 18
- 229910052742 iron Inorganic materials 0.000 claims description 11
- 239000000203 mixture Substances 0.000 claims description 9
- 229910052725 zinc Inorganic materials 0.000 claims description 7
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- 229910052802 copper Inorganic materials 0.000 claims description 5
- 229910052733 gallium Inorganic materials 0.000 claims description 5
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- 229910052789 astatine Inorganic materials 0.000 claims description 3
- 239000013078 crystal Substances 0.000 description 62
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 35
- 238000010586 diagram Methods 0.000 description 19
- 229910052710 silicon Inorganic materials 0.000 description 17
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- 238000005259 measurement Methods 0.000 description 11
- 239000004065 semiconductor Substances 0.000 description 8
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- 230000004913 activation Effects 0.000 description 3
- 239000000155 melt Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
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- 150000003624 transition metals Chemical class 0.000 description 3
- LZJCVNLYDXCIBG-UHFFFAOYSA-N 2-(5,6-dihydro-[1,3]dithiolo[4,5-b][1,4]dithiin-2-ylidene)-5,6-dihydro-[1,3]dithiolo[4,5-b][1,4]dithiine Chemical compound S1C(SCCS2)=C2SC1=C(S1)SC2=C1SCCS2 LZJCVNLYDXCIBG-UHFFFAOYSA-N 0.000 description 2
- 229910017135 Fe—O Inorganic materials 0.000 description 2
- 238000009434 installation Methods 0.000 description 2
- 230000014759 maintenance of location Effects 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000000704 physical effect Effects 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 229910052765 Lutetium Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000002772 conduction electron Substances 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000008034 disappearance Effects 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 230000005621 ferroelectricity Effects 0.000 description 1
- 238000002847 impedance measurement Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 239000008188 pellet Substances 0.000 description 1
- 238000005036 potential barrier Methods 0.000 description 1
- -1 rare earth ion Chemical group 0.000 description 1
- 229910052761 rare earth metal Inorganic materials 0.000 description 1
- 150000003376 silicon Chemical class 0.000 description 1
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- H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
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Abstract
Description
近角聰信 著、「物性科学入門」、裳華房、1999年、第178頁、9−3図 N. Ikeda et al., "Ferroelectricity from iron valence ordering in the charge-frustrated system LuFe2O4", Nature, Vol.436, No.7054, pp.1136-1138 (2005) N. Ikeda et al., "Charge Frustration and Dielectric Dispersion in LuFe2O4", Journal of the Physical Society of Japan, Vol.69, No.5, pp.1526-1532 (2000)
f=f0exp(−U/kT)
におけるパラメータUを決定する。ここで、kはボルツマン定数、f0はフィッティングの際の定数である。
Claims (11)
- 外部から印加された電場に応じて内部の電子の状態が変化することで電気伝導度が変化する電気伝導度変化体と、
前記電気伝導度変化体に外部から電場を与える電場付与手段とを備え、
前記電気伝導度変化体は、その組成が(RMbO3−δ)n(MaO)m(Rは、In,Sc,Y,Dy,Ho,Er,Tm,Yb,Lu,Ti,Ca,Sr,Ce,Sn,Hfから選ばれる少なくとも1種類の元素、Ma、Mbは、Ti,Mn,Fe,Co,Cu,Ga,Zn,Al,Mg,Cdから重複を許して選ばれる少なくとも1種類の元素、nは1以上の整数、mは0以上の整数、δは0以上0.2以下の実数)で表され、層状三角格子構造を有する化合物からなることを特徴とする電子素子。 - 前記層状三角格子構造を有する化合物は、RFe2O4−δであることを特徴とする請求項1記載の電子素子。
- 前記電場付与手段は、
前記電気伝導度変化体上に形成された第1電極と、
前記電気伝導度変化体上に、前記第1電極に対して電気的に離れて配置された第2電極とを含み、
前記第1電極と前記第2電極との間に電圧を印加することで前記電気伝導度変化体に電場を与えることが可能に構成されていることを特徴とする請求項1または2記載の電子素子。 - 前記電場付与手段は、前記第1電極と前記第2電極との間に電圧を印加するための電圧印加手段を含むことを特徴とする請求項3記載の電子素子。
- 前記第1電極と前記第2電極との間に印加される電圧は、0.7V以下の電圧であることを特徴とする請求項3または4記載の電子素子。
- 前記第1電極及び前記第2電極は、前記電気伝導度変化体の層状三角格子構造に対して第1の軸上で対向する位置に配置されるとともに、
前記電気伝導度変化体に対して、前記第1の軸とは異なる第2の軸上で対向する位置に第3電極、及び第4電極が形成され、
前記第1電極と前記第2電極との間に電圧を印加することで、前記第3電極と前記第4電極との間での電流電圧特性が変化するように構成されていることを特徴とする請求項3〜5のいずれか一項記載の電子素子。 - 前記第1電極及び前記第2電極は、前記電気伝導度変化体の層状三角格子構造に対して所定の軸上で対向する位置に配置され、
前記第1電極と前記第2電極との間に電圧を印加して電流を流すことで、前記電気伝導度変化体の電流電圧特性を高抵抗状態から低抵抗状態へと遷移させることが可能に構成されるとともに、その抵抗状態の遷移の抵抗変化履歴への依存性を利用して、前記電気伝導度変化体に情報を保持することを特徴とする請求項3〜5のいずれか一項記載の電子素子。 - 前記電気伝導度変化体は、
前記第1電極と前記第2電極との間で一方の向きへの電流印加履歴がない場合に、前記第1電極と前記第2電極との間で前記一方の向きに流す電流を増大させていくと、その抵抗状態が高抵抗状態から低抵抗状態へと遷移するとともに、
前記一方の向きへの電流印加履歴がある場合に、前記第1電極と前記第2電極との間で前記一方の向きに流す電流を増大させていくと、その抵抗状態は低抵抗状態にあって抵抗状態の遷移を伴わない
ことを特徴とする請求項7記載の電子素子。 - 前記電気伝導度変化体は、
前記第1電極と前記第2電極との間で他方の向きへと電流を流すことで、前記一方の向きについての電流印加履歴が消失されることを特徴とする請求項8記載の電子素子。 - 電気伝導度変化体に外部から電場を与え、前記電気伝導度変化体に印加された電場に応じた内部の電子の状態の変化によって前記電気伝導度変化体の電気伝導度の変化を制御するとともに、
前記電気伝導度変化体は、その組成が(RMbO3−δ)n(MaO)m(Rは、In,Sc,Y,Dy,Ho,Er,Tm,Yb,Lu,Ti,Ca,Sr,Ce,Sn,Hfから選ばれる少なくとも1種類の元素、Ma、Mbは、Ti,Mn,Fe,Co,Cu,Ga,Zn,Al,Mg,Cdから重複を許して選ばれる少なくとも1種類の元素、nは1以上の整数、mは0以上の整数、δは0以上0.2以下の実数)で表され、層状三角格子構造を有する化合物からなることを特徴とする電気伝導度制御方法。 - 前記層状三角格子構造を有する化合物は、RFe2O4−δであることを特徴とする請求項10記載の電気伝導度制御方法。
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JP5717063B2 (ja) * | 2008-09-30 | 2015-05-13 | 国立大学法人 岡山大学 | 電流制御素子及びその製造方法 |
WO2010038786A1 (ja) * | 2008-09-30 | 2010-04-08 | 国立大学法人岡山大学 | メモリ素子及びその製造方法、並びにメモリ素子を備えた記憶装置 |
WO2013080784A1 (ja) * | 2011-11-30 | 2013-06-06 | シャープ株式会社 | メモリ回路とその駆動方法、及び、これを用いた不揮発性記憶装置、並びに、液晶表示装置 |
CN102608168B (zh) * | 2012-02-27 | 2015-07-22 | 中国科学院物理研究所 | 气敏电阻材料及其制备方法 |
US10099938B2 (en) | 2013-12-12 | 2018-10-16 | Samsung Electronics Co., Ltd. | Electrically conductive thin films |
KR102209703B1 (ko) | 2014-02-10 | 2021-01-28 | 삼성전자주식회사 | 하프늄 텔루라이드계 층상 구조 화합물, 이를 포함한 투명 도전막, 및 이를 포함한 전자 소자 |
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