WO2009028426A1 - 電子素子及び電気伝導度制御方法 - Google Patents

電子素子及び電気伝導度制御方法 Download PDF

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Publication number
WO2009028426A1
WO2009028426A1 PCT/JP2008/065045 JP2008065045W WO2009028426A1 WO 2009028426 A1 WO2009028426 A1 WO 2009028426A1 JP 2008065045 W JP2008065045 W JP 2008065045W WO 2009028426 A1 WO2009028426 A1 WO 2009028426A1
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WO
WIPO (PCT)
Prior art keywords
electroconductivity
electric field
electronic element
control method
change body
Prior art date
Application number
PCT/JP2008/065045
Other languages
English (en)
French (fr)
Inventor
Naoshi Ikeda
Original Assignee
National University Corporation Okayama University
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by National University Corporation Okayama University filed Critical National University Corporation Okayama University
Priority to US12/674,726 priority Critical patent/US8294133B2/en
Priority to JP2009530090A priority patent/JP5309397B2/ja
Publication of WO2009028426A1 publication Critical patent/WO2009028426A1/ja

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • H01L27/101—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including resistors or capacitors only
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0007—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements comprising metal oxide memory material, e.g. perovskites
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/04—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using optical elements ; using other beam accessed elements, e.g. electron or ion beam
    • G11C13/047—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using optical elements ; using other beam accessed elements, e.g. electron or ion beam using electro-optical elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H10N70/253—Multistable switching devices, e.g. memristors having three or more terminals, e.g. transistor-like devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/883—Oxides or nitrides
    • H10N70/8836—Complex metal oxides, e.g. perovskites, spinels

Abstract

　電子素子１は、電場に応じて電気伝導度が変化する電気伝導度変化体２と、電気伝導度変化体２に電場を与える電場付与器３とを備える。電気伝導度変化体２は、ＲＦｅ２Ｏ４を含み、電場付与器３によって外部から印加される電場４に応じて内部の電子の状態が変化することで、その電気伝導度が変化する。これにより、小さい電場の印加に応じて電気伝導度を変化させることが可能な電子素子が実現される。
PCT/JP2008/065045 2007-08-24 2008-08-22 電子素子及び電気伝導度制御方法 WO2009028426A1 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
US12/674,726 US8294133B2 (en) 2007-08-24 2008-08-22 Electronic element and electroconductivity control method
JP2009530090A JP5309397B2 (ja) 2007-08-24 2008-08-22 電子素子及び電気伝導度制御方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007219050 2007-08-24
JP2007-219050 2007-08-24

Publications (1)

Publication Number Publication Date
WO2009028426A1 true WO2009028426A1 (ja) 2009-03-05

Family

ID=40387148

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/065045 WO2009028426A1 (ja) 2007-08-24 2008-08-22 電子素子及び電気伝導度制御方法

Country Status (3)

Country Link
US (1) US8294133B2 (ja)
JP (1) JP5309397B2 (ja)
WO (1) WO2009028426A1 (ja)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010038788A1 (ja) * 2008-09-30 2010-04-08 国立大学法人岡山大学 電流制御素子及びその製造方法
WO2010038786A1 (ja) * 2008-09-30 2010-04-08 国立大学法人岡山大学 メモリ素子及びその製造方法、並びにメモリ素子を備えた記憶装置
CN102608168A (zh) * 2012-02-27 2012-07-25 中国科学院物理研究所 气敏电阻材料及其制备方法
WO2013080784A1 (ja) * 2011-11-30 2013-06-06 シャープ株式会社 メモリ回路とその駆動方法、及び、これを用いた不揮発性記憶装置、並びに、液晶表示装置

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10099938B2 (en) 2013-12-12 2018-10-16 Samsung Electronics Co., Ltd. Electrically conductive thin films
KR102209703B1 (ko) 2014-02-10 2021-01-28 삼성전자주식회사 하프늄 텔루라이드계 층상 구조 화합물, 이를 포함한 투명 도전막, 및 이를 포함한 전자 소자

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005079565A (ja) * 2003-09-04 2005-03-24 Toyota Central Res & Dev Lab Inc 熱電変換材料及びその製造方法
JP2005200249A (ja) * 2004-01-14 2005-07-28 Toyota Central Res & Dev Lab Inc 焼結体の製造方法
JP2005216951A (ja) * 2004-01-27 2005-08-11 Matsushita Electric Ind Co Ltd 層状反強誘電体、キャパシタとメモリ及びそれらの製造方法
JP2007223886A (ja) * 2005-11-22 2007-09-06 Japan Synchrotron Radiation Research Inst 物質中の電子密度を双極子状に分布させることで誘電体特性を実現する方法および材料

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3100849A (en) * 1960-06-29 1963-08-13 Lockheed Aircraft Corp Active solid-state devices using anisotropic single crystal rutile
KR101046868B1 (ko) * 2004-04-16 2011-07-06 파나소닉 주식회사 가변저항을 갖는 박막 메모리 장치
US7978047B2 (en) * 2005-08-29 2011-07-12 Sharp Kabushiki Kaisha Variable resistor element and its manufacturing method
JPWO2007138646A1 (ja) * 2006-05-25 2009-10-01 株式会社日立製作所 不揮発性メモリ素子およびその製造方法ならびに不揮発性メモリ素子を用いた半導体装置

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005079565A (ja) * 2003-09-04 2005-03-24 Toyota Central Res & Dev Lab Inc 熱電変換材料及びその製造方法
JP2005200249A (ja) * 2004-01-14 2005-07-28 Toyota Central Res & Dev Lab Inc 焼結体の製造方法
JP2005216951A (ja) * 2004-01-27 2005-08-11 Matsushita Electric Ind Co Ltd 層状反強誘電体、キャパシタとメモリ及びそれらの製造方法
JP2007223886A (ja) * 2005-11-22 2007-09-06 Japan Synchrotron Radiation Research Inst 物質中の電子密度を双極子状に分布させることで誘電体特性を実現する方法および材料

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
IKEDA NAOSHI ET AL: "Ferroelectricity from iron valence ordering in the charge-frustrated system LuFe204", NATURE, vol. 436, no. 7054, 25 August 2005 (2005-08-25), pages 1136 - 1138 *

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010038788A1 (ja) * 2008-09-30 2010-04-08 国立大学法人岡山大学 電流制御素子及びその製造方法
WO2010038786A1 (ja) * 2008-09-30 2010-04-08 国立大学法人岡山大学 メモリ素子及びその製造方法、並びにメモリ素子を備えた記憶装置
JP5467241B2 (ja) * 2008-09-30 2014-04-09 国立大学法人 岡山大学 メモリ素子及びその製造方法、並びにメモリ素子を備えた記憶装置
JP5717063B2 (ja) * 2008-09-30 2015-05-13 国立大学法人 岡山大学 電流制御素子及びその製造方法
WO2013080784A1 (ja) * 2011-11-30 2013-06-06 シャープ株式会社 メモリ回路とその駆動方法、及び、これを用いた不揮発性記憶装置、並びに、液晶表示装置
US9209196B2 (en) 2011-11-30 2015-12-08 Sharp Kabushiki Kaisha Memory circuit, method of driving the same, nonvolatile storage device using the same, and liquid crystal display device
CN102608168A (zh) * 2012-02-27 2012-07-25 中国科学院物理研究所 气敏电阻材料及其制备方法

Also Published As

Publication number Publication date
JP5309397B2 (ja) 2013-10-09
US8294133B2 (en) 2012-10-23
JPWO2009028426A1 (ja) 2010-12-02
US20110168967A1 (en) 2011-07-14

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