WO2009028424A1 - 電子素子及び電気伝導度制御方法 - Google Patents

電子素子及び電気伝導度制御方法 Download PDF

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Publication number
WO2009028424A1
WO2009028424A1 PCT/JP2008/065042 JP2008065042W WO2009028424A1 WO 2009028424 A1 WO2009028424 A1 WO 2009028424A1 JP 2008065042 W JP2008065042 W JP 2008065042W WO 2009028424 A1 WO2009028424 A1 WO 2009028424A1
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WO
WIPO (PCT)
Prior art keywords
electrical conductivity
electronic element
control method
conductivity control
accordance
Prior art date
Application number
PCT/JP2008/065042
Other languages
English (en)
French (fr)
Inventor
Naoshi Ikeda
Original Assignee
National University Corporation Okayama University
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Publication date
Application filed by National University Corporation Okayama University filed Critical National University Corporation Okayama University
Priority to JP2009530089A priority Critical patent/JP5273621B2/ja
Publication of WO2009028424A1 publication Critical patent/WO2009028424A1/ja

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/09—Devices sensitive to infrared, visible or ultraviolet radiation

Abstract

　電子素子１は、入射した光３のエネルギに応じて電気伝導度が変化する電気伝導度変化体２を備える。電気伝導度変化体２は、ＲＦｅ２Ｏ４を含み、低いエネルギの光の入射に応じて内部の電子の状態が変化することで、その電気伝導度が変化する。これにより、低いエネルギの光に応じて電気伝導度を変化させることが可能な電子素子が実現される。
PCT/JP2008/065042 2007-08-24 2008-08-22 電子素子及び電気伝導度制御方法 WO2009028424A1 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2009530089A JP5273621B2 (ja) 2007-08-24 2008-08-22 光検出素子及び太陽電池素子

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2007-219049 2007-08-24
JP2007219049 2007-08-24
JP2008099466 2008-04-07
JP2008-099466 2008-04-07

Publications (1)

Publication Number Publication Date
WO2009028424A1 true WO2009028424A1 (ja) 2009-03-05

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PCT/JP2008/065042 WO2009028424A1 (ja) 2007-08-24 2008-08-22 電子素子及び電気伝導度制御方法

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JP (1) JP5273621B2 (ja)
WO (1) WO2009028424A1 (ja)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010023971A1 (ja) * 2008-08-29 2010-03-04 国立大学法人岡山大学 酸化物及び電気導体の電気物性制御方法
WO2010038788A1 (ja) * 2008-09-30 2010-04-08 国立大学法人岡山大学 電流制御素子及びその製造方法
WO2010038785A1 (ja) * 2008-09-30 2010-04-08 国立大学法人岡山大学 光センサ及びその製造方法
WO2010038787A1 (ja) * 2008-09-30 2010-04-08 国立大学法人岡山大学 光電変換素子及びその製造方法
JP2016530568A (ja) * 2013-08-30 2016-09-29 インターナショナル・ビジネス・マシーンズ・コーポレーションＩｎｔｅｒｎａｔｉｏｎａｌ Ｂｕｓｉｎｅｓｓ Ｍａｃｈｉｎｅｓ Ｃｏｒｐｏｒａｔｉｏｎ 状態変化可能なデバイス、及び、メモリ状態を記憶するための方法
CN107104166A (zh) * 2017-05-03 2017-08-29 常州大学怀德学院 一种ZnO/NiFe2O4纳米阵列复合异质结材料及其制备的太阳能电池

Citations (2)

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JP2000095522A (ja) * 1998-06-29 2000-04-04 Sharp Corp ペロブスカイト型マンガン酸化物薄膜、その製造方法及びそれを用いた赤外線検出素子
JP2004172164A (ja) * 2002-11-15 2004-06-17 Zenji Hiroi 遷移金属酸化物光伝導デバイス

Patent Citations (2)

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JP2000095522A (ja) * 1998-06-29 2000-04-04 Sharp Corp ペロブスカイト型マンガン酸化物薄膜、その製造方法及びそれを用いた赤外線検出素子
JP2004172164A (ja) * 2002-11-15 2004-06-17 Zenji Hiroi 遷移金属酸化物光伝導デバイス

Non-Patent Citations (6)

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Title
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IIDA J ET AL: "Magnetization and Spin Correlation of Two-Dimensional Triangular Antiferromagnet LuFe(2)O(4)", JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, vol. 62, no. 5, May 1993 (1993-05-01), pages 1723 - 1735 *
IKDEA N ET AL: "Ferroelectricity from iron valence ordering in the charge-frustrated system LuFe(2)O(4)", NATURE, vol. 436, no. 7054, August 2005 (2005-08-01), pages 1136 - 1138 *
IKEDA N ET AL: "Charge frustration and Dielectric Dispersion in LuFe(2)O(4)", JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, vol. 69, no. 5, May 2000 (2000-05-01), pages 1526 - 1532 *
KIMIZUKA N ET AL: "The Systems R(2)O(3)-M(2)O(3)-M'O", HANDBOOK ON THE PHYSICS AND CHEMISTRY OF RARE EARTHS, vol. 13, 1990, pages 283 - 384 *
TOKUNAGA Y ET AL: "Rotation of orbital stripes and the consequent charge-polarized statee in bilayer magnetics", NATURE MATERIALS, vol. 5, December 2006 (2006-12-01), pages 937 - 941 *

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010023971A1 (ja) * 2008-08-29 2010-03-04 国立大学法人岡山大学 酸化物及び電気導体の電気物性制御方法
WO2010038788A1 (ja) * 2008-09-30 2010-04-08 国立大学法人岡山大学 電流制御素子及びその製造方法
WO2010038785A1 (ja) * 2008-09-30 2010-04-08 国立大学法人岡山大学 光センサ及びその製造方法
WO2010038787A1 (ja) * 2008-09-30 2010-04-08 国立大学法人岡山大学 光電変換素子及びその製造方法
JP5360838B2 (ja) * 2008-09-30 2013-12-04 国立大学法人 岡山大学 光電変換素子及びその製造方法
JP5360837B2 (ja) * 2008-09-30 2013-12-04 国立大学法人 岡山大学 光センサ及びその製造方法
JP5717063B2 (ja) * 2008-09-30 2015-05-13 国立大学法人 岡山大学 電流制御素子及びその製造方法
JP2016530568A (ja) * 2013-08-30 2016-09-29 インターナショナル・ビジネス・マシーンズ・コーポレーションＩｎｔｅｒｎａｔｉｏｎａｌ Ｂｕｓｉｎｅｓｓ Ｍａｃｈｉｎｅｓ Ｃｏｒｐｏｒａｔｉｏｎ 状態変化可能なデバイス、及び、メモリ状態を記憶するための方法
US10692577B2 (en) 2013-08-30 2020-06-23 International Business Machines Corporation State-changeable device
US10762962B2 (en) 2013-08-30 2020-09-01 International Business Machines Corporation State-changeable device
CN107104166A (zh) * 2017-05-03 2017-08-29 常州大学怀德学院 一种ZnO/NiFe2O4纳米阵列复合异质结材料及其制备的太阳能电池

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Publication number Publication date
JP5273621B2 (ja) 2013-08-28
JPWO2009028424A1 (ja) 2010-12-02

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