JPS649750B2 - - Google Patents
Info
- Publication number
- JPS649750B2 JPS649750B2 JP12347683A JP12347683A JPS649750B2 JP S649750 B2 JPS649750 B2 JP S649750B2 JP 12347683 A JP12347683 A JP 12347683A JP 12347683 A JP12347683 A JP 12347683A JP S649750 B2 JPS649750 B2 JP S649750B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- active
- optical waveguide
- active layer
- semiconductor laser
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 claims description 19
- 230000003287 optical effect Effects 0.000 claims description 17
- 239000000758 substrate Substances 0.000 claims description 3
- 230000000694 effects Effects 0.000 description 6
- 230000010355 oscillation Effects 0.000 description 6
- 230000008878 coupling Effects 0.000 description 5
- 238000010168 coupling process Methods 0.000 description 5
- 238000005859 coupling reaction Methods 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 239000013078 crystal Substances 0.000 description 1
- 230000010365 information processing Effects 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
- H01S5/1228—DFB lasers with a complex coupled grating, e.g. gain or loss coupling
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
- H01S5/4031—Edge-emitting structures
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12347683A JPS6016484A (ja) | 1983-07-08 | 1983-07-08 | 半導体レ−ザ |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12347683A JPS6016484A (ja) | 1983-07-08 | 1983-07-08 | 半導体レ−ザ |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS6016484A JPS6016484A (ja) | 1985-01-28 |
JPS649750B2 true JPS649750B2 (enrdf_load_stackoverflow) | 1989-02-20 |
Family
ID=14861570
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP12347683A Granted JPS6016484A (ja) | 1983-07-08 | 1983-07-08 | 半導体レ−ザ |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6016484A (enrdf_load_stackoverflow) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0632323B2 (ja) * | 1983-12-13 | 1994-04-27 | 株式会社日立製作所 | 半導体レ−ザ装置 |
JPS648689A (en) * | 1987-06-30 | 1989-01-12 | Sharp Kk | Semiconductor laser array element and manufacture thereof |
-
1983
- 1983-07-08 JP JP12347683A patent/JPS6016484A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS6016484A (ja) | 1985-01-28 |
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