JPS649724B2 - - Google Patents
Info
- Publication number
- JPS649724B2 JPS649724B2 JP58184528A JP18452883A JPS649724B2 JP S649724 B2 JPS649724 B2 JP S649724B2 JP 58184528 A JP58184528 A JP 58184528A JP 18452883 A JP18452883 A JP 18452883A JP S649724 B2 JPS649724 B2 JP S649724B2
- Authority
- JP
- Japan
- Prior art keywords
- varistor
- diffusing agent
- voltage
- diffusion
- solution
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000003795 chemical substances by application Substances 0.000 claims description 23
- 229910052751 metal Inorganic materials 0.000 claims description 22
- 239000002184 metal Substances 0.000 claims description 22
- 238000000034 method Methods 0.000 claims description 15
- 238000009792 diffusion process Methods 0.000 claims description 14
- 239000000919 ceramic Substances 0.000 claims description 12
- 238000004519 manufacturing process Methods 0.000 claims description 8
- 239000000758 substrate Substances 0.000 claims description 8
- 239000008149 soap solution Substances 0.000 claims description 6
- 239000011259 mixed solution Substances 0.000 claims description 5
- 150000003839 salts Chemical class 0.000 claims description 4
- 239000011230 binding agent Substances 0.000 claims description 3
- 238000001035 drying Methods 0.000 claims description 3
- 239000002562 thickening agent Substances 0.000 claims description 2
- 229910015902 Bi 2 O 3 Inorganic materials 0.000 description 6
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 6
- 229910052797 bismuth Inorganic materials 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- 239000000344 soap Substances 0.000 description 5
- LRHPLDYGYMQRHN-UHFFFAOYSA-N N-Butanol Chemical compound CCCCO LRHPLDYGYMQRHN-UHFFFAOYSA-N 0.000 description 4
- 239000000843 powder Substances 0.000 description 4
- 239000000243 solution Substances 0.000 description 4
- 229910052573 porcelain Inorganic materials 0.000 description 3
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 2
- 230000006835 compression Effects 0.000 description 2
- 238000007906 compression Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 229910052745 lead Inorganic materials 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 239000012266 salt solution Substances 0.000 description 2
- 238000005204 segregation Methods 0.000 description 2
- 238000002791 soaking Methods 0.000 description 2
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 230000001066 destructive effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 239000010419 fine particle Substances 0.000 description 1
- 238000005324 grain boundary diffusion Methods 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 239000012046 mixed solvent Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- WWZKQHOCKIZLMA-UHFFFAOYSA-N octanoic acid Chemical compound CCCCCCCC(O)=O WWZKQHOCKIZLMA-UHFFFAOYSA-N 0.000 description 1
- 238000005036 potential barrier Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
Landscapes
- Thermistors And Varistors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58184528A JPS6077401A (ja) | 1983-10-04 | 1983-10-04 | バリスタの製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58184528A JPS6077401A (ja) | 1983-10-04 | 1983-10-04 | バリスタの製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6077401A JPS6077401A (ja) | 1985-05-02 |
| JPS649724B2 true JPS649724B2 (de) | 1989-02-20 |
Family
ID=16154771
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58184528A Granted JPS6077401A (ja) | 1983-10-04 | 1983-10-04 | バリスタの製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6077401A (de) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2019002167A (ja) * | 2017-06-13 | 2019-01-10 | 有限会社わたなべ | レベル設定用棒材の回転用工具 |
-
1983
- 1983-10-04 JP JP58184528A patent/JPS6077401A/ja active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2019002167A (ja) * | 2017-06-13 | 2019-01-10 | 有限会社わたなべ | レベル設定用棒材の回転用工具 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6077401A (ja) | 1985-05-02 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPS6015127B2 (ja) | 電圧非直線抵抗体およびその製法 | |
| JPH01128402A (ja) | 非直線抵抗体 | |
| JPS644322B2 (de) | ||
| JPS6243326B2 (de) | ||
| US3716407A (en) | Electrical device having ohmic or low loss contacts | |
| JPS649724B2 (de) | ||
| US3670221A (en) | Voltage variable resistors | |
| JPS6243324B2 (de) | ||
| KR920005155B1 (ko) | 산화아연 바리스터의 제조방법 | |
| JPS6161245B2 (de) | ||
| JP2555791B2 (ja) | 磁器組成物及びその製造方法 | |
| JPS6246961B2 (de) | ||
| TW469188B (en) | Material of overvoltage protective element and method for making the same | |
| JP2001052907A (ja) | セラミック素子とその製造方法 | |
| JPS5948521B2 (ja) | 正特性半導体磁器の製造方法 | |
| JPS62193228A (ja) | 電圧非直線性素子 | |
| JPS6257081B2 (de) | ||
| JP2555790B2 (ja) | 磁器組成物及びその製造方法 | |
| JPH05198408A (ja) | 半導体磁器バリスタの製造方法 | |
| JPH03211703A (ja) | 粒界バリア型高静電容量セラミックバリスタの製造方法 | |
| JPS63132401A (ja) | 電圧非直線抵抗体の製造方法 | |
| JPS5831721B2 (ja) | 電圧非直線抵抗素子およびその製造方法 | |
| JPH08319157A (ja) | チタン酸バリウム系セラミックス及びその製造方法 | |
| JPS622501A (ja) | 電圧電流非直線抵抗体 | |
| JPH04144961A (ja) | 磁器組成物及びその製造方法 |