JPS649665A - Manufacture of radiation detection element - Google Patents

Manufacture of radiation detection element

Info

Publication number
JPS649665A
JPS649665A JP62163996A JP16399687A JPS649665A JP S649665 A JPS649665 A JP S649665A JP 62163996 A JP62163996 A JP 62163996A JP 16399687 A JP16399687 A JP 16399687A JP S649665 A JPS649665 A JP S649665A
Authority
JP
Japan
Prior art keywords
cadmium
tellurium
crystal
raw material
ampule
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62163996A
Other languages
Japanese (ja)
Inventor
Tadayoshi Shoji
Hideaki Onabe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
TOKYO DENSHI YAKIN KENKYUSHO
TOKYO DENSHI YAKIN KENKYUSHO KK
Original Assignee
TOKYO DENSHI YAKIN KENKYUSHO
TOKYO DENSHI YAKIN KENKYUSHO KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by TOKYO DENSHI YAKIN KENKYUSHO, TOKYO DENSHI YAKIN KENKYUSHO KK filed Critical TOKYO DENSHI YAKIN KENKYUSHO
Priority to JP62163996A priority Critical patent/JPS649665A/en
Publication of JPS649665A publication Critical patent/JPS649665A/en
Pending legal-status Critical Current

Links

Landscapes

  • Measurement Of Radiation (AREA)
  • Light Receiving Elements (AREA)

Abstract

PURPOSE:To enable excellent cadmium telluride crystal large in diameter to be produced by a method wherein cadmium and tellurium are mixed with each other and then cadmium chloride is added to the mixture to be heated in a furnace for crystal growth. CONSTITUTION:The raw material is mixed with 30% of cadmium and 70% of tellurium in molar fraction while cadmium chloride is added to the raw material to contain chloride content corresponding to 3000ppm of gross weight of the raw material. The mixed raw material is filled is an ampule formed of quartz to be vacuum-sealed. Then, this ampule is heated in a furnace similar to that used for the Bridgman method. The crystal growing temperature region (a) is specified within the range of around 950-1000 deg.C to be cooled down abruptly. Within the temperature range (a), the ampule is pulled down at specified speed and the raw material after crystal growing process is fed to the other temperature region (b) to be cooled down abruptly making the separated crystal set forthwith. Through these procedures, any excessive tellurium is not contained in the separated part to produce an excellent cadmium telluride crystal keeping the ratio between tellurium and cadmium at almost 1:1. After removing any excessive tellurium, the separated crystal is vacuum-sealed again in the ampule formed of quartz to be processed at 200+ or -30 deg.C for two or three hours.
JP62163996A 1987-07-02 1987-07-02 Manufacture of radiation detection element Pending JPS649665A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62163996A JPS649665A (en) 1987-07-02 1987-07-02 Manufacture of radiation detection element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62163996A JPS649665A (en) 1987-07-02 1987-07-02 Manufacture of radiation detection element

Publications (1)

Publication Number Publication Date
JPS649665A true JPS649665A (en) 1989-01-12

Family

ID=15784777

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62163996A Pending JPS649665A (en) 1987-07-02 1987-07-02 Manufacture of radiation detection element

Country Status (1)

Country Link
JP (1) JPS649665A (en)

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