JPS649665A - Manufacture of radiation detection element - Google Patents
Manufacture of radiation detection elementInfo
- Publication number
- JPS649665A JPS649665A JP62163996A JP16399687A JPS649665A JP S649665 A JPS649665 A JP S649665A JP 62163996 A JP62163996 A JP 62163996A JP 16399687 A JP16399687 A JP 16399687A JP S649665 A JPS649665 A JP S649665A
- Authority
- JP
- Japan
- Prior art keywords
- cadmium
- tellurium
- crystal
- raw material
- ampule
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Measurement Of Radiation (AREA)
- Light Receiving Elements (AREA)
Abstract
PURPOSE:To enable excellent cadmium telluride crystal large in diameter to be produced by a method wherein cadmium and tellurium are mixed with each other and then cadmium chloride is added to the mixture to be heated in a furnace for crystal growth. CONSTITUTION:The raw material is mixed with 30% of cadmium and 70% of tellurium in molar fraction while cadmium chloride is added to the raw material to contain chloride content corresponding to 3000ppm of gross weight of the raw material. The mixed raw material is filled is an ampule formed of quartz to be vacuum-sealed. Then, this ampule is heated in a furnace similar to that used for the Bridgman method. The crystal growing temperature region (a) is specified within the range of around 950-1000 deg.C to be cooled down abruptly. Within the temperature range (a), the ampule is pulled down at specified speed and the raw material after crystal growing process is fed to the other temperature region (b) to be cooled down abruptly making the separated crystal set forthwith. Through these procedures, any excessive tellurium is not contained in the separated part to produce an excellent cadmium telluride crystal keeping the ratio between tellurium and cadmium at almost 1:1. After removing any excessive tellurium, the separated crystal is vacuum-sealed again in the ampule formed of quartz to be processed at 200+ or -30 deg.C for two or three hours.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62163996A JPS649665A (en) | 1987-07-02 | 1987-07-02 | Manufacture of radiation detection element |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62163996A JPS649665A (en) | 1987-07-02 | 1987-07-02 | Manufacture of radiation detection element |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS649665A true JPS649665A (en) | 1989-01-12 |
Family
ID=15784777
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP62163996A Pending JPS649665A (en) | 1987-07-02 | 1987-07-02 | Manufacture of radiation detection element |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS649665A (en) |
-
1987
- 1987-07-02 JP JP62163996A patent/JPS649665A/en active Pending
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