JPS649601A - Manufacture of thin film platinum temperature sensor - Google Patents

Manufacture of thin film platinum temperature sensor

Info

Publication number
JPS649601A
JPS649601A JP16452187A JP16452187A JPS649601A JP S649601 A JPS649601 A JP S649601A JP 16452187 A JP16452187 A JP 16452187A JP 16452187 A JP16452187 A JP 16452187A JP S649601 A JPS649601 A JP S649601A
Authority
JP
Japan
Prior art keywords
thin film
platinum thin
substrate
manufacture
temperature sensor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP16452187A
Other languages
Japanese (ja)
Inventor
Hideyuki Tanigawa
Kazuhisa Matsumoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP16452187A priority Critical patent/JPS649601A/en
Publication of JPS649601A publication Critical patent/JPS649601A/en
Pending legal-status Critical Current

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  • Thermistors And Varistors (AREA)

Abstract

PURPOSE:To improve heat response and to elevate a resistance temperature coefficient, by forming a platinum thin film or a metal or insulating substrate, forming a resin film after heat treatment, and fusing and removing the substrate. CONSTITUTION:A platinum thin film 2c is formed on a silicon substrate 5 by an electron beam evaporating method. The platinum thin film 2c is patterned by photoetching. At this time, as an etching liquid, aqua regia is heated and used. After photoresist is removed, heat treatment is performed at 800 deg.C. Then a first resin film 6 comprising polyimide is formed on the platinum thin film 2c. The silicon substrate 5 is fused and removed with etching liquid of fluoric acid and nitric acid. Thereafter, a lead wires 4c are connected to the platinum thin film 2c by spot welding. Finally, a second resin film 7 is formed on the rear surface (the surface, where the platinum thin film is exposed by the removal of the substrate).
JP16452187A 1987-07-01 1987-07-01 Manufacture of thin film platinum temperature sensor Pending JPS649601A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16452187A JPS649601A (en) 1987-07-01 1987-07-01 Manufacture of thin film platinum temperature sensor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16452187A JPS649601A (en) 1987-07-01 1987-07-01 Manufacture of thin film platinum temperature sensor

Publications (1)

Publication Number Publication Date
JPS649601A true JPS649601A (en) 1989-01-12

Family

ID=15794743

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16452187A Pending JPS649601A (en) 1987-07-01 1987-07-01 Manufacture of thin film platinum temperature sensor

Country Status (1)

Country Link
JP (1) JPS649601A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100393945B1 (en) * 2001-02-24 2003-08-06 이노스텍 (주) Method for manufactuing a metal thin film resistor device and method for manufacturing a metal thin film temperature sensor using the same
JP2012119389A (en) * 2010-11-29 2012-06-21 Tdk Corp Thermistor, temperature sensor and gas sensor
CN107209067A (en) * 2015-01-15 2017-09-26 株式会社电装 Temperature sensor and its manufacture method

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100393945B1 (en) * 2001-02-24 2003-08-06 이노스텍 (주) Method for manufactuing a metal thin film resistor device and method for manufacturing a metal thin film temperature sensor using the same
JP2012119389A (en) * 2010-11-29 2012-06-21 Tdk Corp Thermistor, temperature sensor and gas sensor
CN107209067A (en) * 2015-01-15 2017-09-26 株式会社电装 Temperature sensor and its manufacture method
CN107209067B (en) * 2015-01-15 2019-08-20 株式会社电装 Temperature sensor and its manufacturing method

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