JPS649601A - Manufacture of thin film platinum temperature sensor - Google Patents
Manufacture of thin film platinum temperature sensorInfo
- Publication number
- JPS649601A JPS649601A JP16452187A JP16452187A JPS649601A JP S649601 A JPS649601 A JP S649601A JP 16452187 A JP16452187 A JP 16452187A JP 16452187 A JP16452187 A JP 16452187A JP S649601 A JPS649601 A JP S649601A
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- platinum thin
- substrate
- manufacture
- temperature sensor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Thermistors And Varistors (AREA)
Abstract
PURPOSE:To improve heat response and to elevate a resistance temperature coefficient, by forming a platinum thin film or a metal or insulating substrate, forming a resin film after heat treatment, and fusing and removing the substrate. CONSTITUTION:A platinum thin film 2c is formed on a silicon substrate 5 by an electron beam evaporating method. The platinum thin film 2c is patterned by photoetching. At this time, as an etching liquid, aqua regia is heated and used. After photoresist is removed, heat treatment is performed at 800 deg.C. Then a first resin film 6 comprising polyimide is formed on the platinum thin film 2c. The silicon substrate 5 is fused and removed with etching liquid of fluoric acid and nitric acid. Thereafter, a lead wires 4c are connected to the platinum thin film 2c by spot welding. Finally, a second resin film 7 is formed on the rear surface (the surface, where the platinum thin film is exposed by the removal of the substrate).
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16452187A JPS649601A (en) | 1987-07-01 | 1987-07-01 | Manufacture of thin film platinum temperature sensor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16452187A JPS649601A (en) | 1987-07-01 | 1987-07-01 | Manufacture of thin film platinum temperature sensor |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS649601A true JPS649601A (en) | 1989-01-12 |
Family
ID=15794743
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP16452187A Pending JPS649601A (en) | 1987-07-01 | 1987-07-01 | Manufacture of thin film platinum temperature sensor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS649601A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100393945B1 (en) * | 2001-02-24 | 2003-08-06 | 이노스텍 (주) | Method for manufactuing a metal thin film resistor device and method for manufacturing a metal thin film temperature sensor using the same |
JP2012119389A (en) * | 2010-11-29 | 2012-06-21 | Tdk Corp | Thermistor, temperature sensor and gas sensor |
CN107209067A (en) * | 2015-01-15 | 2017-09-26 | 株式会社电装 | Temperature sensor and its manufacture method |
-
1987
- 1987-07-01 JP JP16452187A patent/JPS649601A/en active Pending
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100393945B1 (en) * | 2001-02-24 | 2003-08-06 | 이노스텍 (주) | Method for manufactuing a metal thin film resistor device and method for manufacturing a metal thin film temperature sensor using the same |
JP2012119389A (en) * | 2010-11-29 | 2012-06-21 | Tdk Corp | Thermistor, temperature sensor and gas sensor |
CN107209067A (en) * | 2015-01-15 | 2017-09-26 | 株式会社电装 | Temperature sensor and its manufacture method |
CN107209067B (en) * | 2015-01-15 | 2019-08-20 | 株式会社电装 | Temperature sensor and its manufacturing method |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS5477588A (en) | Heat insulating single piece semiconductor die and method of producing same | |
JPS649601A (en) | Manufacture of thin film platinum temperature sensor | |
JPS56100451A (en) | Manufacture of electrode of semiconductor device | |
JP2000146511A (en) | Strain gauge | |
JPS6123503B2 (en) | ||
JPH06310580A (en) | Measuring method for temperature of semiconductor wafer and semiconductor wafer with temperature measuring means | |
JP3033143B2 (en) | Gas sensor manufacturing method | |
GB1597403A (en) | Temperature-measuring resistors for resistance thermometers and methods of manufacturing same | |
US3444015A (en) | Method of etching tantalum | |
JPH0330281B2 (en) | ||
JPS5566113A (en) | Manufacture of elastic surface wave device | |
SU557698A1 (en) | Method for making shf pulse power transducers | |
JPS5673450A (en) | Manufacture of semiconductor device | |
JPS604221A (en) | Manufacture of semiconductor device | |
JPS5559718A (en) | Producing method of semiconductor unit | |
JPH0754968A (en) | Micro-gear and its manufacture | |
JPS57202778A (en) | Substrate for semiconductor integrated circuit and manufacture thereof | |
JPS6453427A (en) | Bonding process | |
JPS605230B2 (en) | Manufacturing method of Josephson device | |
JPS57130429A (en) | Formation of electrode wiring | |
JPS5818789B2 (en) | Manufacturing method of magnetoresistive element | |
JPH05832A (en) | Method for etching vitreous material | |
JPS5919393A (en) | Method of producing thin film circuit | |
JPS61154024A (en) | Manufacture of semiconductor element | |
JPS63312645A (en) | Manufacture of semiconductor device |