JPH06310580A - Measuring method for temperature of semiconductor wafer and semiconductor wafer with temperature measuring means - Google Patents

Abstract

PURPOSE:To provide a method for increasing the response and reliability of the measurement of a wafer temperature within a semiconductor manufacturing apparatus by repeating the formation of a thin film and very fine work to form a thermocouple on the surface of a semiconductor wafer. CONSTITUTION:A metal thin film is formed on a wafer, and a plurality of thermocouples 5 are formed by repeating very fine work, and a pad 7 for drawing out data is provided in the end part of the wafer, thereby making it feasible to externally draw out the data. The wafer and the thermocouples 5 are formed in one body, thereby making it feasible to increase in the response and reliability temperature measurement of a wafer within a semiconductor manufacturing apparatus. Therefore, the reliability of preparation for a surface temperature map and of the monitoring of temperature change can be increased.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for measuring a temperature of a semiconductor wafer in a semiconductor manufacturing apparatus, and particularly, by repeating thin film formation and microfabrication to build a thermocouple on the wafer, It relates to a method for measuring the temperature of a wafer during processing.

[0002]

2. Description of the Related Art Conventionally, when a thermocouple is manufactured, a dissimilar metal in a linear or thin film shape is heat-sealed and connected. In this method, in order to know the temperature of the wafer, a thermocouple must be attached to the wafer with an adhesive or tape, which reduces the response due to contact resistance and the reliability when used in a high temperature atmosphere. There were problems such as.

Therefore, it is important to repeat the thin film formation and the microfabrication to form the thermocouple on the wafer in order to measure the temperature with good response.

[0004]

SUMMARY OF THE INVENTION Therefore, an object of the present invention is to repeat the thin film formation and the microfabrication to build a thermocouple on the wafer, thereby making it possible to improve the responsiveness of the temperature measurement of the wafer in the semiconductor manufacturing apparatus. It is to provide a method of increasing reliability.

[0005]

In order to solve the above problems, in the temperature measuring method of the present invention, the first metal layer formed on the wafer and the first metal layer contacting the first metal layer are in contact with each other. Temperature measurement is performed using a second metal layer composed of a second metal different from the layer metal and a thermocouple composed of signal extraction pads from the first metal layer and the second metal layer.

[0006]

The metal thin film is formed on the wafer and the microfabrication is repeated to form a plurality of thermocouples, and pads for taking out data are provided at the ends of the wafer. Then, the data is taken out from the pad to the outside.

By integrating the wafer and the thermocouple, it becomes possible to improve the responsiveness and reliability of the temperature measurement of the wafer in the semiconductor manufacturing apparatus.

[0008]

1 and 2 are views showing a method for producing a thermocouple in an embodiment of the present invention. The substrate of the thermocouple section 5 is etched (FIG. 1A), and the oxide film 1 is formed on the entire surface (FIG. 1B). Next, a metal layer A2 is formed (see FIG.
(C)), the thermocouple section 5, the wiring section 6, and the pad section 7 are left and etched (FIG. 1D). Similarly, the metal layer B3 is formed (FIG. 2A), and the thermocouple portion 5, the wiring portion 6 and the pad portion 7 are left and etched (FIG. 2B). At this time, fine processing is performed so that the metal layer A2 and the metal layer B3 are in contact with each other. In some cases, a heat treatment step may be added after etching the metal layer B3. In order to prevent contamination of the wafer surface and contamination of the measurement target device during temperature measurement, the protective film 4 is finally formed on the entire surface leaving the pad portion 7 (FIG. 2).
(C)).

FIG. 3 is a diagram showing a temperature measuring method using a thermocouple wafer manufactured according to the present invention. The thermocouple parts 5 formed on the wafer are wired to the pad part 7 for data extraction so that the data of all thermocouples can be extracted. A plurality of pads 7 may be provided at the end of the wafer. From the pad section 7 to the recording device 9,
Wiring is performed by heat-resistant covered wiring 8. The temperature change of each part of the wafer can be known during the processing of the wafer by the semiconductor manufacturing apparatus, and the temperature change map on the wafer can be produced by the recording apparatus 9 with time.

[0010]

As described above, according to the present invention, it is possible to improve the reliability of the in-plane temperature map of the wafer being processed in the semiconductor manufacturing apparatus and the temperature change monitoring.

[Brief description of drawings]

FIG. 1 is a diagram showing a thermocouple manufacturing method in an example of the present invention.

FIG. 2 is a diagram showing a method for producing a thermocouple in an example of the present invention.

FIG. 3 is a diagram showing a temperature measurement method using a semiconductor wafer provided with a thermocouple manufactured according to the present invention.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 oxide film 2 metal layer A 3 metal layer B 4 protective film 5 thermocouple part 6 wiring part 7 pad part 8 covered wiring 9 recording device

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[Procedure amendment]

[Submission date] October 12, 1993

[Procedure Amendment 1]

[Document name to be amended] Statement

[Correction target item name] 0008

[Correction method] Change

[Correction content]

[0008]

EXAMPLES 1 and 2, Ri FIG der showing a thermocouple manufacturing method in the embodiment of the present invention, FIG. 3 is a plan view of a thermocouple
Oh Ru. The substrate of the thermocouple part 5 is etched (see FIG.
(A)), an oxide film 1 is formed on the entire surface (FIG. 1 (b)).
Next, the metal layer A2 is formed (FIG. 1C), and the thermocouple section 5, the wiring section 6, and the pad section 7 are left to be etched (FIG. 1D). Similarly, a metal layer B3 is formed (see FIG.
(A)), the thermocouple section 5, the wiring section 6, and the pad section 7 are left to be etched (FIG. 2B). At this time, fine processing is performed so that the metal layer A2 and the metal layer B3 are in contact with each other. In some cases, a heat treatment step may be added after etching the metal layer B3. In order to prevent the contamination of the wafer surface and the contamination of the measurement target device during the temperature measurement, the protective film 4 is finally formed on the entire surface leaving the pad portion 7 (FIG. 2C).

[Procedure Amendment 2]

[Document name to be amended] Statement

[Name of item to be corrected] Brief description of the drawing

[Correction method] Change

[Correction content]

[Brief description of drawings]

FIG. 1 is a diagram showing a thermocouple manufacturing method in an example of the present invention.

FIG. 2 is a diagram showing a method for producing a thermocouple in an example of the present invention.

FIG. 3 is a plan view of a thermocouple according to an embodiment of the present invention.
It

FIG. 4 is a semiconductor window having a thermocouple manufactured according to the present invention.
It is a figure which shows the temperature measuring method by Eha.

[Description of Reference Signs] 1 oxide film 2 metal layer A 3 metal layer B 4 protective film 5 thermocouple part 6 wiring part 7 pad part 8 covered wiring 9 recording device

Claims (2)

[Claims] 1. A method for measuring the temperature of a semiconductor wafer being processed in a semiconductor manufacturing apparatus, comprising: a first metal layer formed on a semiconductor wafer; and a first metal layer in contact with the first metal layer. A second metal layer made of a second metal different from the layer metal and a thermocouple made up of signal take-out pads from the first metal layer and the second metal layer are used, and a current from the signal take-out pad is used. A method for measuring the temperature of a semiconductor wafer, characterized in that the temperature is measured by the method. 2. A thermocouple consisting of a first metal layer and a second metal layer which is in contact with the first metal layer and is made of a second metal different from the metal of the first metal layer is provided on the entire surface of the wafer. Of the plurality of thermocouples, the semiconductor wafer having signal extraction pads from the plurality of thermocouples.