JPS5818789B2 - Manufacturing method of magnetoresistive element - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION The present invention provides a method for manufacturing a magnetoresistive element in which indium antimony is not only effectively heat-treated but also has a large resistance change rate.

In the conventional magnetoresistive element, as shown in FIG. 1, an indium antimony thin film 2 is formed on a substrate 1 by flash evaporation or the like, lead wire extraction electrodes 3°3 are provided at both ends, and indium oxide is deposited on the indium antimony thin film 2. If an oxide film 4 such as silicon oxide is attached as a protective film and heat treated at a temperature of 500°C or higher, cracks or pinholes will occur in the oxide film 4 during the heat treatment, and phenomena such as coagulation oxidation of indium antimony and evaporation of antimony will occur. Therefore, a magnetoresistive element with a high rate of resistance change could not be expected.

This invention was made in view of the above points, and a recess is provided in the substrate, and indium antimony is embedded in the recess.
The present invention provides a method for producing a magnetoresistive element, which is characterized in that the indium antimony is shielded with a quartz plate and then subjected to heat treatment, and after the quartz plate is removed, a shorting electrode and a lead wire extraction electrode are provided on the surface of the indium antimony. be.

The present invention will be explained below based on the illustrated embodiments.

First, as shown in FIG.
a metal layer 12 such as copper that has a slow etching rate with respect to hydrofluoric acid;
12, and then etched the glass substrate 11 with hydrofluoric acid to form a recess 1 in the center of the upper surface of the glass substrate 11 as shown in Figure 2.
3 will be provided.

Next, indium antimony is deposited on the upper surface of the glass substrate 11 by a flash method or the like to form an indium antimony thin film layer 14 as shown in FIG. 2C.

At this time, the temperature of the glass substrate 11 is relatively low, 350 to 40°C, and the metal layers 1 and 2 of silver, copper, etc. are etched and removed using hydrochloric acid, sulfuric acid, etc., and the indium antimony deposited thereon is removed. 2 to obtain a glass substrate in which indium antimony 14 is embedded in the four parts 13 as shown in FIG.

Next, as shown in FIG. 2E, a quartz plate 15 is placed on the glass substrate 11 and heat treated at a temperature around the melting point of 500 to 550°C.

At this time, heat treatment is performed in vacuum or in an inert gas to prevent oxidation of the element.

In this case, since the quartz plate 15 has high heat resistance at high temperatures, agglomeration of indium antimony and evaporation of antimony are avoided, making it possible to obtain a magnetoresistive element with a high rate of change in resistance of indium antimony in a stoichiometric relationship. .

[Brief explanation of the drawing]

FIG. 1 is a sectional view of a device shown as a conventional example, FIG. 2 is a manufacturing process diagram showing an embodiment of the present invention, and FIG. 3 is a plan view of a device obtained by the present invention. 11... Glass substrate, 13... - recessed part,
14... Indium antimony layer, 16...
...Short circuit electrode, 1γ...Lead wire extraction electrode.

Claims (1)

[Claims] 1. A recess is provided in the substrate, indium antimony is buried in the recess, the indium antimony is shielded with a quartz plate, and then heat treated. After the quartz plate is removed, a short-circuit electrode is placed on the surface of the indium antimony. Manufacture of a magnetoresistive element characterized by providing a lead wire drawer. , .