JPS64928A - Liquid crystal element - Google Patents
Liquid crystal elementInfo
- Publication number
- JPS64928A JPS64928A JP62156932A JP15693287A JPS64928A JP S64928 A JPS64928 A JP S64928A JP 62156932 A JP62156932 A JP 62156932A JP 15693287 A JP15693287 A JP 15693287A JP S64928 A JPS64928 A JP S64928A
- Authority
- JP
- Japan
- Prior art keywords
- liquid crystal
- injection
- sealing material
- cell
- longitudinal direction
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Liquid Crystal (AREA)
Abstract
PURPOSE: To decrease the generation of orientation defects in the liquid crystal after the injection by disposing thin film transistors in such a manner that the longitudinal direction thereof parallels the injection direction of a ferroelectric liquid crystal, thereby changing the flow of the liquid crystal to a laminar flow and increasing the injection speed thereof.
CONSTITUTION: The thin film transistors (TFT) 7... are so disposed that the longitudinal direction intersects orthogonally with the sectional direction of a liquid crystal injection port 10 of a cell. The longitudinal direction thereof parallels the injection direction of the liquid crystal. A sealing material 9 is provided on the three sides of the square superposed surface of upper and lower substrates 2, 3. The sealing material 9 is not provided to the remaining one side and a gap part where the sealing material 9 does not exist constitutes a liquid crystal injection port 10. The liquid crystal 4 is filled into the gap formed of the upper and lower substrates 2, 3 and sealing material 9 of the cell. The flow of the liquid crystal 4 is, therefore, no longer hindered even if said liquid crystal is the ferroelectric liquid crystal having a high viscosity at the time of injecting, the liquid crystal into the cell. The injection speed is thereby increased and the generation of the orientation defects in the liquid crystal after the injection is decreased.
COPYRIGHT: (C)1989,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62156932A JPS64928A (en) | 1987-06-24 | 1987-06-24 | Liquid crystal element |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62156932A JPS64928A (en) | 1987-06-24 | 1987-06-24 | Liquid crystal element |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH01928A JPH01928A (en) | 1989-01-05 |
JPS64928A true JPS64928A (en) | 1989-01-05 |
Family
ID=15638504
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP62156932A Pending JPS64928A (en) | 1987-06-24 | 1987-06-24 | Liquid crystal element |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS64928A (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5105290A (en) * | 1989-03-09 | 1992-04-14 | International Business Machines Corporation | Liquid crystal display device with an inlet sealant containing particles |
US5252304A (en) * | 1990-10-26 | 1993-10-12 | Mercian Corporation | Formalin sterilization apparatus |
JPH09311348A (en) * | 1996-05-22 | 1997-12-02 | Seiko Epson Corp | Active matrix type liquid crystal display device and production therefor |
US6713783B1 (en) | 1991-03-15 | 2004-03-30 | Semiconductor Energy Laboratory Co., Ltd. | Compensating electro-optical device including thin film transistors |
-
1987
- 1987-06-24 JP JP62156932A patent/JPS64928A/en active Pending
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5105290A (en) * | 1989-03-09 | 1992-04-14 | International Business Machines Corporation | Liquid crystal display device with an inlet sealant containing particles |
US5252304A (en) * | 1990-10-26 | 1993-10-12 | Mercian Corporation | Formalin sterilization apparatus |
US6713783B1 (en) | 1991-03-15 | 2004-03-30 | Semiconductor Energy Laboratory Co., Ltd. | Compensating electro-optical device including thin film transistors |
JPH09311348A (en) * | 1996-05-22 | 1997-12-02 | Seiko Epson Corp | Active matrix type liquid crystal display device and production therefor |
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