JPS6491137A - Formation of positive type thick film resist pattern - Google Patents
Formation of positive type thick film resist patternInfo
- Publication number
- JPS6491137A JPS6491137A JP62248058A JP24805887A JPS6491137A JP S6491137 A JPS6491137 A JP S6491137A JP 62248058 A JP62248058 A JP 62248058A JP 24805887 A JP24805887 A JP 24805887A JP S6491137 A JPS6491137 A JP S6491137A
- Authority
- JP
- Japan
- Prior art keywords
- resist
- photomask
- positive type
- wafer
- formation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
PURPOSE:To improve the adhesiveness of a thick resist film formed by using a positive type resist to a 2nd photomask and to improve the yield of pattern formation by removing the thick part in the end part of said resist film or forming said part to the same thickness as the thickness of the central part by using a lot photomask. CONSTITUTION:The resist film 11 is formed on a wafer 10 by coating the positive type resist thereon and drying the coating. The resist in the end part of the wafer is thereafter exposed by the 1st photomask and is developed to remove the resist in the end part of the wafer or to form the resist film having the same film thickness as the film thickness in the central part of the wafer. The required pattern is then exposed by the 2nd photomask 13 and is developed. Since the adhesiveness of the resist film to the 2nd photomask is thereby improved, the yield of the pattern formation is improved.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62248058A JPS6491137A (en) | 1987-10-02 | 1987-10-02 | Formation of positive type thick film resist pattern |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62248058A JPS6491137A (en) | 1987-10-02 | 1987-10-02 | Formation of positive type thick film resist pattern |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6491137A true JPS6491137A (en) | 1989-04-10 |
Family
ID=17172573
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP62248058A Pending JPS6491137A (en) | 1987-10-02 | 1987-10-02 | Formation of positive type thick film resist pattern |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6491137A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5615897A (en) * | 1994-09-19 | 1997-04-01 | U-Sun Gasket Corporation | Gasket material layer including cork, fibers, rubber, and a rubber chemical |
-
1987
- 1987-10-02 JP JP62248058A patent/JPS6491137A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5615897A (en) * | 1994-09-19 | 1997-04-01 | U-Sun Gasket Corporation | Gasket material layer including cork, fibers, rubber, and a rubber chemical |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS5271871A (en) | Washing apparatus | |
JPS6491137A (en) | Formation of positive type thick film resist pattern | |
JPS5418279A (en) | Pattern formation method | |
JPS51114120A (en) | Photographic material | |
JPS649618A (en) | Pattern formation | |
JPS5413777A (en) | Photo resist coater of semiconductor wafers | |
JPS52139374A (en) | Alignment pattern forming method for mask alignment | |
JPS5580323A (en) | Pattern forming method for photoresist-film | |
JPS55138839A (en) | Method of fabricating semiconductor device | |
JPS53112671A (en) | Forming method for pattern | |
JPS542685A (en) | Forming method for metal wiring | |
JPS5429975A (en) | Photo mask | |
JPS5646230A (en) | Exposing method | |
JPS5432068A (en) | Manufacture of semiconductor device | |
JPS52127174A (en) | Minute patern formation method | |
JPS5267270A (en) | Photo etching method | |
JPS5380994A (en) | Lift-off method | |
JPS5381079A (en) | Mask forming method | |
JPS6444935A (en) | Pattern forming method | |
JPS52101991A (en) | Preparation of silicon target | |
JPS5639543A (en) | Manufacture of chromium mask | |
JPS55154598A (en) | Manufacture of watch case | |
JPS5321629A (en) | Method of manufacturing skii board | |
JPS5227371A (en) | Pattern film formed on upper surface of substrate | |
JPS5527637A (en) | Photo-resist-pattern forming method |