JPS6490520A - Method for growing semiconductor thin film - Google Patents

Method for growing semiconductor thin film

Info

Publication number
JPS6490520A
JPS6490520A JP24944587A JP24944587A JPS6490520A JP S6490520 A JPS6490520 A JP S6490520A JP 24944587 A JP24944587 A JP 24944587A JP 24944587 A JP24944587 A JP 24944587A JP S6490520 A JPS6490520 A JP S6490520A
Authority
JP
Japan
Prior art keywords
gas
conductance
lead
maintained
pipe
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP24944587A
Other languages
Japanese (ja)
Inventor
Akihiko Okamoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP24944587A priority Critical patent/JPS6490520A/en
Publication of JPS6490520A publication Critical patent/JPS6490520A/en
Pending legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)

Abstract

PURPOSE:To reduce fluctuation of conductance and to improve controllability of thin film growth, by employing such structure as material gas in a gas conduit is maintained in molecule flow. CONSTITUTION:Gas material is discharged through a gas lead-in port to a substrate 11 under vacuum so as to grow a semiconductor film. The gas material in a gas conduit between a needle valve 5 or a mass flow controller and the outlet of gas lead-in pipe 1 is maintained in molecule flow. Consequently, conductance of the gas lead-in pipe 1 depends only on the thermal motion speed of gas and does not depend on the viscosity coefficient and the average pressure of gas. When compared with the case where gas in the gas lead-in pipe 1 is maintained in viscous flow, fluctuation of conductance is suppressed and controllability of film growth is improved.
JP24944587A 1987-10-01 1987-10-01 Method for growing semiconductor thin film Pending JPS6490520A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP24944587A JPS6490520A (en) 1987-10-01 1987-10-01 Method for growing semiconductor thin film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP24944587A JPS6490520A (en) 1987-10-01 1987-10-01 Method for growing semiconductor thin film

Publications (1)

Publication Number Publication Date
JPS6490520A true JPS6490520A (en) 1989-04-07

Family

ID=17193073

Family Applications (1)

Application Number Title Priority Date Filing Date
JP24944587A Pending JPS6490520A (en) 1987-10-01 1987-10-01 Method for growing semiconductor thin film

Country Status (1)

Country Link
JP (1) JPS6490520A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5020424A (en) * 1989-08-03 1991-06-04 Zexel Corporation Apparatus for controlling an automotive air-conditioner

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5020424A (en) * 1989-08-03 1991-06-04 Zexel Corporation Apparatus for controlling an automotive air-conditioner

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