CN113373422A - Device for improving POLY-SI chemical vapor deposition and using method thereof - Google Patents

Device for improving POLY-SI chemical vapor deposition and using method thereof Download PDF

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Publication number
CN113373422A
CN113373422A CN202110482685.8A CN202110482685A CN113373422A CN 113373422 A CN113373422 A CN 113373422A CN 202110482685 A CN202110482685 A CN 202110482685A CN 113373422 A CN113373422 A CN 113373422A
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CN
China
Prior art keywords
honeycomb duct
reaction chamber
poly
connecting pipe
improving
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Pending
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CN202110482685.8A
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Chinese (zh)
Inventor
寇文辉
胡晓亮
陈伊林
马兆硕
苗利刚
李战国
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Mesk Electronic Materials Co Ltd
MCL Electronic Materials Ltd
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Mesk Electronic Materials Co Ltd
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Priority to CN202110482685.8A priority Critical patent/CN113373422A/en
Publication of CN113373422A publication Critical patent/CN113373422A/en
Pending legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/24—Deposition of silicon only
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45561—Gas plumbing upstream of the reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process

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  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

The invention discloses a device for improving POLY-SI chemical meteorology deposition, which comprises a reaction cavity, a flow guide mechanism, a connecting pipe, a flow meter and a vacuum mechanism, wherein the flow guide mechanism comprises a plurality of flow guide branch pipes, one ends of the plurality of flow guide branch pipes are arranged in the reaction cavity, the other ends of the flow guide branch pipes penetrate through the reaction cavity and are communicated with the connecting pipe, the flow meter is arranged on the connecting pipe, a control valve is arranged between the connecting pipe and the flow meter, and the vacuum mechanism is communicated with the reaction cavity.

Description

Device for improving POLY-SI chemical vapor deposition and using method thereof
Technical Field
The invention relates to the technical field of semiconductor processing, in particular to a device for improving POLY-SI chemical vapor deposition and a using method thereof.
Background
The polysilicon film process is commonly used for gettering of monocrystalline silicon wafers, and in the polysilicon film growth process, the used reaction gas SIH4 is conveyed to the surfaces of the silicon wafers through a flow guide pipe. In the conventional horizontal furnace platform POLY-SI film growth process, silane gas inlet is controlled by a single flow guide pipe, and the flow guide pipe is blocked due to polycrystalline silicon produced by decomposing silane in the flow guide pipe after the flow guide pipe is operated for a period of time because the pipe diameter of the flow guide pipe is small, so that the flow guide pipe with poor uniformity among chips of a product is scrapped.
Only 1 SIH4 flowmeter and 1 flow guide pipe are used for controlling the flow on the horizontal LPCVD furnace platform, the distance between the flow guide pipe and the paddle or the boat is short, the diameter of the flow guide pipe is usually thin, and the flow guide pipe is easy to block in the process.
Disclosure of Invention
The invention aims to provide a device for improving POLY-SI chemical meteorological deposition and a use method thereof.
The technical scheme adopted by the invention to solve the technical problems is as follows: the device comprises a reaction cavity, a guide pipe assembly, a connecting pipe, a flowmeter and a vacuum mechanism, wherein one end of the guide pipe assembly is arranged in the reaction cavity, the other end of the guide pipe assembly penetrates through the reaction cavity and then is communicated with the connecting pipe, the flowmeter is arranged on the connecting pipe, a control valve is arranged between the connecting pipe and the flowmeter, and the vacuum mechanism is communicated with the reaction cavity.
Further, the honeycomb duct subassembly includes honeycomb duct I and honeycomb duct II, and honeycomb duct I sets up in the top of honeycomb duct II, and the one end setting of honeycomb duct I is linked together with the connecting pipe after passing the reaction chamber in the reaction chamber, and the one end setting of honeycomb duct II is linked together with the connecting pipe in the reaction chamber in the other end of honeycomb duct I, and the other end of honeycomb duct II passes the reaction chamber after and.
Furthermore, the honeycomb duct I arranged in the reaction cavity is uniformly provided with through holes.
Furthermore, honeycomb duct II that sets up in the reaction chamber is including ventilating section and seal segment, and the seal segment setting is under honeycomb duct I, and the section of ventilating is last even to be seted up the through-hole.
Further, the vacuum mechanism comprises a communicating pipe and a vacuum pump, one end of the communicating pipe is communicated with the reaction cavity, and the other end of the communicating pipe is connected with the vacuum pump.
Furthermore, the reaction chamber is a constant temperature reaction chamber.
A method of using an apparatus for improving the chemo-meteorological deposition of POLY-SI, comprising the steps of:
opening a vacuum pump, and vacuumizing a reaction cavity to generate negative pressure in the reaction cavity;
step two, adjusting the flow meter to the required flow, and opening the control valve;
and step three, silane gas enters the reaction cavity through holes in the flow guide pipe I and the flow guide pipe II.
Has the advantages that:
the invention has the following beneficial effects: this patent is honeycomb duct I and honeycomb duct II through changing single honeycomb duct, uses a flowmeter to carry out the gas flow control of 2 honeycomb ducts, and then realizes the purpose that increases the honeycomb duct pipe diameter to delay the jam speed of honeycomb duct, prolong the life-span of honeycomb duct. The number of the holes of the 2 designed guide pipes is the same, so that the uniform conveying of the SIH4 gas in the constant-temperature area of the furnace chamber can be realized, the step temperature area distribution is not needed, and the consistency of the product quality of the whole furnace can be maintained.
Drawings
FIG. 1 is a schematic diagram of the structure of the apparatus of the present invention;
FIG. 2 is a schematic structural view of a nozzle assembly of the present invention disposed within a reaction chamber;
FIG. 3 is an enlarged schematic view of a portion of the structure of FIG. 2;
the device comprises a graphic mark 1, a reaction cavity 2, a flow guide pipe I, 201, a through hole 202, a flow guide pipe II, 3, a connecting pipe 4, a control valve 5, a flow meter 6, a communicating pipe 7 and a vacuum pump.
Detailed Description
The present invention will be described in further detail with reference to the following figures and specific examples, which should not be construed as limiting the scope of the invention.
The utility model provides an improve POLY-SI chemistry meteorology sedimentary device, the device includes reaction chamber 1, the nozzle assembly, connecting pipe 3, flowmeter 5 and vacuum mechanism, reaction chamber 1 is constant temperature reaction chamber 1, the one end setting of nozzle assembly is in reaction chamber 1, the other end of nozzle assembly is linked together with connecting pipe 3 after passing reaction chamber 1, the nozzle assembly includes honeycomb duct I2 and honeycomb duct II 202, honeycomb duct I sets up the top at honeycomb duct II, the one end setting of honeycomb duct I is in reaction chamber 1, the other end of honeycomb duct I2 is linked together with connecting pipe 3 after passing reaction chamber 1, the one end setting of honeycomb duct II 202 is in reaction chamber 1, the other end of honeycomb duct II 202 is linked together with connecting pipe 3 after passing reaction chamber 1.
Set up even on honeycomb duct I2 in reaction chamber 1 and seted up through-hole 201, honeycomb duct II 202 that sets up in reaction chamber 1 sets gradually with the seal segment including ventilating section and seal segment, the seal segment setting under honeycomb duct I2, the even through-hole 201 of having seted up in the section of ventilating. The sealing section is a normal flow guide pipe, the sealing section is arranged at one end close to the connecting pipe, and the sealing section is not provided with a through hole;
through-hole 201 distribution mode on honeycomb duct I2 does: the top of the flow guide pipe I2 is provided with a plurality of through holes I along the length direction of the flow guide pipe I2, the through holes I are arranged on the flow guide pipe I2 at equal intervals, the bottom of the flow guide pipe I2 is provided with a plurality of through holes II at equal intervals, and a through hole II is arranged between every two adjacent through holes I; the distribution mode of the through holes 201 on the draft tube II 202 is the same as that of the through holes 201 on the draft tube I2;
flowmeter 5 sets up on connecting pipe 3, is provided with control valve 4 between connecting pipe 3 and flowmeter 5, vacuum mechanism is linked together with reaction chamber 1, and vacuum mechanism includes communicating pipe 6 and vacuum pump 7, and the one end of communicating pipe 6 is linked together with reaction chamber 1, and the other end of communicating pipe 6 links to each other with vacuum pump 7.
A method of using an apparatus for improving the chemo-meteorological deposition of POLY-SI, comprising the steps of:
step one, opening a vacuum pump 7, and vacuumizing a reaction cavity 1 to generate negative pressure in the reaction cavity 1;
step two, adjusting the flow meter 5 to the required flow, and opening the control valve 4;
and step three, silane gas enters the reaction chamber 1 through the through holes 201 on the flow guide pipe I2 and the flow guide pipe II 202.
This patent is not changing the honeycomb duct pipe diameter, under the prerequisite that does not increase the flowmeter, use 1 flowmeter, 2 honeycomb ducts-honeycomb duct I2 and honeycomb duct II 202 carry out gas transport, the through-hole has been seted up at the thermostatic zone position of reaction chamber to honeycomb duct I2 and honeycomb duct II 202, if the through-hole quantity on honeycomb duct I2 and honeycomb duct II 202 is the same, it is the same with every hole silane flow of honeycomb duct I2 and honeycomb duct II 202 to realize. The honeycomb duct I2 and the honeycomb duct II 202 are used for air supply, the air inlet pipe diameter in the high-temperature reaction cavity is indirectly increased, the thickness of polycrystal which can be allowed to grow in the honeycomb duct is increased after the air inlet pipe diameter is increased, and the service life of the honeycomb duct is further prolonged. The honeycomb duct is uniformly perforated, and the positions of the through holes are distributed in the constant temperature area, so that uniform air supply in the constant temperature area can be basically realized. After uniform gas supply is realized, the constant temperature area can be set to the same temperature, and a stepped temperature area is not used, so that the uniformity of the silicon wafers in the whole furnace can be well controlled.
The specific implementation process comprises the following steps: the invention uses a flow meter 5 and a pneumatic control valve 4 to control the air intake of a guide pipe I2 and a guide pipe II 202, equidistant through holes 201 are distributed on the guide pipe I2 and the guide pipe II 202, all the through holes 201 are distributed in a constant temperature area of a reaction chamber 1, in the process of POLY-SI chemical meteorology deposition, a vacuum pump 7 generates negative pressure to the reaction chamber 1, under the condition of negative pressure, the required silane flow is set through the flow meter 5, the control valve 4 is opened, and silane gas enters the reaction chamber through the through holes 201 on the guide pipe I2 and the guide pipe II 202; the process condition can realize the uniform delivery of 300SCCM of silane gas; by the design, the service life of the diversion pipeline can be prolonged by more than 1.5 times. The through holes of the guide pipe I2 and the guide pipe II 202 are distributed in the constant temperature area of the reaction cavity 1, the temperature setting is basically consistent, the stepped temperature design is not needed, and the consistency of all products in the constant temperature area can be kept.
It is further noted that relational terms such as i, ii, and iii may be used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Also, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising an … …" does not exclude the presence of other identical elements in a process, method, article, or apparatus that comprises the element.

Claims (7)

1. An apparatus for improving the chemometric deposition of POLY-SI, comprising: the device includes reaction chamber, nozzle assembly, connecting pipe, flowmeter and vacuum mechanism, and the one end setting of nozzle assembly is in the reaction chamber, and the other end of nozzle assembly is linked together with the connecting pipe after passing the reaction chamber, the flowmeter sets up on the connecting pipe, is provided with the control valve between connecting pipe and flowmeter, vacuum mechanism is linked together with the reaction chamber.
2. An apparatus for improving the chemometeorological deposition of POLY-SI, according to claim 1, wherein: the honeycomb duct subassembly includes honeycomb duct I and honeycomb duct II, and honeycomb duct I sets up in the top of honeycomb duct II, and the one end setting of honeycomb duct I is in the reaction intracavity, and the other end of honeycomb duct I is linked together with the connecting pipe after passing the reaction chamber, and the one end setting of honeycomb duct II is in the reaction intracavity, and the other end of honeycomb duct II is linked together with the connecting pipe after passing the reaction chamber.
3. An apparatus for improving the chemometeorological deposition of POLY-SI, according to claim 2, wherein: the honeycomb duct I arranged in the reaction cavity is uniformly provided with through holes.
4. An apparatus for improving the chemometeorological deposition of POLY-SI, according to claim 3, wherein: the honeycomb duct II arranged in the reaction cavity comprises a ventilation section and a sealing section, the sealing section is arranged under the honeycomb duct I, and through holes are uniformly formed in the ventilation section.
5. An apparatus for improving the chemometeorological deposition of POLY-SI, according to claim 1, wherein: the vacuum mechanism comprises a communicating pipe and a vacuum pump, one end of the communicating pipe is communicated with the reaction cavity, and the other end of the communicating pipe is connected with the vacuum pump.
6. An apparatus for improving the chemometeorological deposition of POLY-SI, according to claim 1, wherein: the reaction chamber is a constant temperature reaction chamber.
7. Use of an apparatus for improving the chemometeorological deposition of POLY-SI according to any one of claims 1 to 6, wherein: the preparation method comprises the following preparation steps:
opening a vacuum pump, and vacuumizing a reaction cavity to generate negative pressure in the reaction cavity;
step two, adjusting the flow meter to the required flow, and opening the control valve;
and step three, silane gas enters the reaction cavity through holes in the flow guide pipe I and the flow guide pipe II.
CN202110482685.8A 2021-04-30 2021-04-30 Device for improving POLY-SI chemical vapor deposition and using method thereof Pending CN113373422A (en)

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CN202110482685.8A CN113373422A (en) 2021-04-30 2021-04-30 Device for improving POLY-SI chemical vapor deposition and using method thereof

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Application Number Priority Date Filing Date Title
CN202110482685.8A CN113373422A (en) 2021-04-30 2021-04-30 Device for improving POLY-SI chemical vapor deposition and using method thereof

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114038941A (en) * 2021-11-05 2022-02-11 浙江晶科能源有限公司 Solar cell preparation method

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20140322900A1 (en) * 2011-12-07 2014-10-30 Wuxi China Resources Huajing Microelectronics Co., Ltd Low-pressure chemical vapor deposition apparatus and thin-film deposition method thereof
CN205893385U (en) * 2016-08-02 2017-01-18 深圳市贝特瑞新能源材料股份有限公司 Chemical vapor deposition device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20140322900A1 (en) * 2011-12-07 2014-10-30 Wuxi China Resources Huajing Microelectronics Co., Ltd Low-pressure chemical vapor deposition apparatus and thin-film deposition method thereof
CN205893385U (en) * 2016-08-02 2017-01-18 深圳市贝特瑞新能源材料股份有限公司 Chemical vapor deposition device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114038941A (en) * 2021-11-05 2022-02-11 浙江晶科能源有限公司 Solar cell preparation method

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