JPS6482633A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS6482633A JPS6482633A JP62242120A JP24212087A JPS6482633A JP S6482633 A JPS6482633 A JP S6482633A JP 62242120 A JP62242120 A JP 62242120A JP 24212087 A JP24212087 A JP 24212087A JP S6482633 A JPS6482633 A JP S6482633A
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- gate electrode
- insulating film
- region
- drain
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Electrodes Of Semiconductors (AREA)
- Formation Of Insulating Films (AREA)
- Junction Field-Effect Transistors (AREA)
Abstract
PURPOSE:To enable the suppressing of occurrence of piezo-electric polarization, by specifying longitudinal elasticity and vertical stress of an insulating film to those of a gate electrode. CONSTITUTION:An operation layer 2 is formed on a surface of a semiinsulating substrate 1. A gate electrode 3 with prescribed compressive stress and longitudinal elasticity of 3.9mu10<12> is formed thereon. A source region 4 and a drain region 5 are formed with the gate electrode 3 serving as a mask. After a source electrode 6 and a drain electrode 7 are formed, an insulating film 8 whose compressive stress and Iongitudinal elasticity are both within + or -20% compared with those of the gate electrode 3 is formed thereon and then an opening part 81 is formed. A surface of the insulating film 8 is flattened to remove the insulating film on the electrode 3. The source electrode 6 is connected to the drain electrode 7 with the opening part 81 in between. A metallic wiring layer 9 connected to the gate electrode 3 is formed and a region A1 high in charge density is formed within the substrate 1.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62242120A JPS6482633A (en) | 1987-09-25 | 1987-09-25 | Semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62242120A JPS6482633A (en) | 1987-09-25 | 1987-09-25 | Semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6482633A true JPS6482633A (en) | 1989-03-28 |
Family
ID=17084594
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP62242120A Pending JPS6482633A (en) | 1987-09-25 | 1987-09-25 | Semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6482633A (en) |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5415681A (en) * | 1977-07-06 | 1979-02-05 | Nec Corp | Manufacture of field effect transistor |
JPS6086871A (en) * | 1983-10-18 | 1985-05-16 | Nec Corp | Manufacture of field effect transistor |
JPS6257255A (en) * | 1985-09-06 | 1987-03-12 | Agency Of Ind Science & Technol | Manufacture of compound semiconductor device |
-
1987
- 1987-09-25 JP JP62242120A patent/JPS6482633A/en active Pending
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5415681A (en) * | 1977-07-06 | 1979-02-05 | Nec Corp | Manufacture of field effect transistor |
JPS6086871A (en) * | 1983-10-18 | 1985-05-16 | Nec Corp | Manufacture of field effect transistor |
JPS6257255A (en) * | 1985-09-06 | 1987-03-12 | Agency Of Ind Science & Technol | Manufacture of compound semiconductor device |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS56135968A (en) | Amorphous silicon thin film transistor and manufacture thereof | |
JPS6451665A (en) | Semiconductor device | |
JPS56125868A (en) | Thin-film semiconductor device | |
JPS6484669A (en) | Thin film transistor | |
GB2016803A (en) | Thin film transistor construction and manufacturing method of the same | |
JPS6482633A (en) | Semiconductor device | |
JPS6442135A (en) | Semiconductor device | |
JPS53112687A (en) | Semiconductor device | |
JPS6459921A (en) | Semiconductor device | |
JPS5750478A (en) | Manufacture of semiconductor device | |
JPS6489372A (en) | Semiconductor device | |
JPS54136186A (en) | Semiconductor device | |
JPS6457671A (en) | Semiconductor device and manufacture thereof | |
JPS5291382A (en) | Insulating gate type field effect transistor | |
JPS6450568A (en) | Semiconductor device | |
JPS5734368A (en) | Protective diode for insulated gate field-effect transistor | |
JPS5683080A (en) | Schottky-barrier-diode | |
JPS5526636A (en) | Semiconductor device | |
JPS56146281A (en) | Manufacture of semiconductor integrated circuit | |
JPS57134965A (en) | Semiconductor device | |
JPS57117280A (en) | Semiconductor device and manufacture thereof | |
JPS57106069A (en) | Semiconductor device and manufacture thereof | |
JPS54117681A (en) | Production of semiconductor device | |
JPS54134583A (en) | Forming method of multilayer wiring layer | |
JPS54144871A (en) | Semiconducor device |