JPS6482633A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS6482633A
JPS6482633A JP62242120A JP24212087A JPS6482633A JP S6482633 A JPS6482633 A JP S6482633A JP 62242120 A JP62242120 A JP 62242120A JP 24212087 A JP24212087 A JP 24212087A JP S6482633 A JPS6482633 A JP S6482633A
Authority
JP
Japan
Prior art keywords
electrode
gate electrode
insulating film
region
drain
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62242120A
Other languages
Japanese (ja)
Inventor
Sakae Hojo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP62242120A priority Critical patent/JPS6482633A/en
Publication of JPS6482633A publication Critical patent/JPS6482633A/en
Pending legal-status Critical Current

Links

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Formation Of Insulating Films (AREA)
  • Junction Field-Effect Transistors (AREA)

Abstract

PURPOSE:To enable the suppressing of occurrence of piezo-electric polarization, by specifying longitudinal elasticity and vertical stress of an insulating film to those of a gate electrode. CONSTITUTION:An operation layer 2 is formed on a surface of a semiinsulating substrate 1. A gate electrode 3 with prescribed compressive stress and longitudinal elasticity of 3.9mu10<12> is formed thereon. A source region 4 and a drain region 5 are formed with the gate electrode 3 serving as a mask. After a source electrode 6 and a drain electrode 7 are formed, an insulating film 8 whose compressive stress and Iongitudinal elasticity are both within + or -20% compared with those of the gate electrode 3 is formed thereon and then an opening part 81 is formed. A surface of the insulating film 8 is flattened to remove the insulating film on the electrode 3. The source electrode 6 is connected to the drain electrode 7 with the opening part 81 in between. A metallic wiring layer 9 connected to the gate electrode 3 is formed and a region A1 high in charge density is formed within the substrate 1.
JP62242120A 1987-09-25 1987-09-25 Semiconductor device Pending JPS6482633A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62242120A JPS6482633A (en) 1987-09-25 1987-09-25 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62242120A JPS6482633A (en) 1987-09-25 1987-09-25 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS6482633A true JPS6482633A (en) 1989-03-28

Family

ID=17084594

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62242120A Pending JPS6482633A (en) 1987-09-25 1987-09-25 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS6482633A (en)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5415681A (en) * 1977-07-06 1979-02-05 Nec Corp Manufacture of field effect transistor
JPS6086871A (en) * 1983-10-18 1985-05-16 Nec Corp Manufacture of field effect transistor
JPS6257255A (en) * 1985-09-06 1987-03-12 Agency Of Ind Science & Technol Manufacture of compound semiconductor device

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5415681A (en) * 1977-07-06 1979-02-05 Nec Corp Manufacture of field effect transistor
JPS6086871A (en) * 1983-10-18 1985-05-16 Nec Corp Manufacture of field effect transistor
JPS6257255A (en) * 1985-09-06 1987-03-12 Agency Of Ind Science & Technol Manufacture of compound semiconductor device

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