JPS6459921A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS6459921A JPS6459921A JP21823187A JP21823187A JPS6459921A JP S6459921 A JPS6459921 A JP S6459921A JP 21823187 A JP21823187 A JP 21823187A JP 21823187 A JP21823187 A JP 21823187A JP S6459921 A JPS6459921 A JP S6459921A
- Authority
- JP
- Japan
- Prior art keywords
- gate electrode
- insulating film
- electrode
- stress
- dyn
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Formation Of Insulating Films (AREA)
- Junction Field-Effect Transistors (AREA)
Abstract
PURPOSE:To improve the yield and the integration degree by restricting the film stress of a gate electrode and an insulating film as well as restraining the piezoelectric polarization from occurring and the threshold value voltage from changing by a method wherein the insulating film is formed of a material in the longitudinal elastic coefficient and the vertical stress on the gate electrode respectively within specified ranges. CONSTITUTION:After forming a source electrode 6 and a drain electrode 7 comprising metallic layer of AuGe-Ni, overall surface is coated with an aluminum oxide film in thickness of 0.5mum using sputtering process; an insulating film 8 in compression stress of 2X10<9>dyn/cm<2> and longitudinal elastic coefficient of 4.6X10<12>dyn/cm2 both not exceeding + or -20% to a gate electrode 3 is formed; and openings 81 are selectively made. Finally, a metallic wiring layer 9 comprising Ti-Pt-Au connecting to the gate electrode 3, the source electrode 6 and the drain electrode 7 is formed through the intermediary of the openings 81. Through these procedures, the piezoelectric polarization can be restrained from occurring so that the threshold value voltage may be restrained from changing to improve the yield.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP21823187A JPS6459921A (en) | 1987-08-31 | 1987-08-31 | Semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP21823187A JPS6459921A (en) | 1987-08-31 | 1987-08-31 | Semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6459921A true JPS6459921A (en) | 1989-03-07 |
Family
ID=16716663
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP21823187A Pending JPS6459921A (en) | 1987-08-31 | 1987-08-31 | Semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6459921A (en) |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5415681A (en) * | 1977-07-06 | 1979-02-05 | Nec Corp | Manufacture of field effect transistor |
JPS6257255A (en) * | 1985-09-06 | 1987-03-12 | Agency Of Ind Science & Technol | Manufacture of compound semiconductor device |
-
1987
- 1987-08-31 JP JP21823187A patent/JPS6459921A/en active Pending
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5415681A (en) * | 1977-07-06 | 1979-02-05 | Nec Corp | Manufacture of field effect transistor |
JPS6257255A (en) * | 1985-09-06 | 1987-03-12 | Agency Of Ind Science & Technol | Manufacture of compound semiconductor device |
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