JPS6459921A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS6459921A
JPS6459921A JP21823187A JP21823187A JPS6459921A JP S6459921 A JPS6459921 A JP S6459921A JP 21823187 A JP21823187 A JP 21823187A JP 21823187 A JP21823187 A JP 21823187A JP S6459921 A JPS6459921 A JP S6459921A
Authority
JP
Japan
Prior art keywords
gate electrode
insulating film
electrode
stress
dyn
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP21823187A
Other languages
Japanese (ja)
Inventor
Sakae Hojo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP21823187A priority Critical patent/JPS6459921A/en
Publication of JPS6459921A publication Critical patent/JPS6459921A/en
Pending legal-status Critical Current

Links

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  • Formation Of Insulating Films (AREA)
  • Junction Field-Effect Transistors (AREA)

Abstract

PURPOSE:To improve the yield and the integration degree by restricting the film stress of a gate electrode and an insulating film as well as restraining the piezoelectric polarization from occurring and the threshold value voltage from changing by a method wherein the insulating film is formed of a material in the longitudinal elastic coefficient and the vertical stress on the gate electrode respectively within specified ranges. CONSTITUTION:After forming a source electrode 6 and a drain electrode 7 comprising metallic layer of AuGe-Ni, overall surface is coated with an aluminum oxide film in thickness of 0.5mum using sputtering process; an insulating film 8 in compression stress of 2X10<9>dyn/cm<2> and longitudinal elastic coefficient of 4.6X10<12>dyn/cm2 both not exceeding + or -20% to a gate electrode 3 is formed; and openings 81 are selectively made. Finally, a metallic wiring layer 9 comprising Ti-Pt-Au connecting to the gate electrode 3, the source electrode 6 and the drain electrode 7 is formed through the intermediary of the openings 81. Through these procedures, the piezoelectric polarization can be restrained from occurring so that the threshold value voltage may be restrained from changing to improve the yield.
JP21823187A 1987-08-31 1987-08-31 Semiconductor device Pending JPS6459921A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP21823187A JPS6459921A (en) 1987-08-31 1987-08-31 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP21823187A JPS6459921A (en) 1987-08-31 1987-08-31 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS6459921A true JPS6459921A (en) 1989-03-07

Family

ID=16716663

Family Applications (1)

Application Number Title Priority Date Filing Date
JP21823187A Pending JPS6459921A (en) 1987-08-31 1987-08-31 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS6459921A (en)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5415681A (en) * 1977-07-06 1979-02-05 Nec Corp Manufacture of field effect transistor
JPS6257255A (en) * 1985-09-06 1987-03-12 Agency Of Ind Science & Technol Manufacture of compound semiconductor device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5415681A (en) * 1977-07-06 1979-02-05 Nec Corp Manufacture of field effect transistor
JPS6257255A (en) * 1985-09-06 1987-03-12 Agency Of Ind Science & Technol Manufacture of compound semiconductor device

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