JPS6481220A - Formation of metal and semiconductor contact - Google Patents

Formation of metal and semiconductor contact

Info

Publication number
JPS6481220A
JPS6481220A JP23955887A JP23955887A JPS6481220A JP S6481220 A JPS6481220 A JP S6481220A JP 23955887 A JP23955887 A JP 23955887A JP 23955887 A JP23955887 A JP 23955887A JP S6481220 A JPS6481220 A JP S6481220A
Authority
JP
Japan
Prior art keywords
gas
inlet
metal
compound gas
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP23955887A
Other languages
English (en)
Other versions
JP2544156B2 (ja
Inventor
Junichi Nishizawa
Toru Kurabayashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Research Foundation
Original Assignee
Semiconductor Research Foundation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Research Foundation filed Critical Semiconductor Research Foundation
Priority to JP62239558A priority Critical patent/JP2544156B2/ja
Publication of JPS6481220A publication Critical patent/JPS6481220A/ja
Application granted granted Critical
Publication of JP2544156B2 publication Critical patent/JP2544156B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Landscapes

  • Electrodes Of Semiconductors (AREA)
JP62239558A 1987-09-22 1987-09-22 金属・半導体接触の形成方法 Expired - Fee Related JP2544156B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62239558A JP2544156B2 (ja) 1987-09-22 1987-09-22 金属・半導体接触の形成方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62239558A JP2544156B2 (ja) 1987-09-22 1987-09-22 金属・半導体接触の形成方法

Publications (2)

Publication Number Publication Date
JPS6481220A true JPS6481220A (en) 1989-03-27
JP2544156B2 JP2544156B2 (ja) 1996-10-16

Family

ID=17046587

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62239558A Expired - Fee Related JP2544156B2 (ja) 1987-09-22 1987-09-22 金属・半導体接触の形成方法

Country Status (1)

Country Link
JP (1) JP2544156B2 (ja)

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS49110276A (ja) * 1973-02-21 1974-10-21
JPS49110275A (ja) * 1973-02-20 1974-10-21
JPS57178315A (en) * 1981-04-27 1982-11-02 Nippon Telegr & Teleph Corp <Ntt> Manufacture of semiconductor single crystal
JPS5934631A (ja) * 1982-08-23 1984-02-25 Toshiba Corp 半導体装置製造方法
JPS61217575A (ja) * 1985-03-20 1986-09-27 Hitachi Ltd 光化学気相薄膜形成装置及び方法
JPS61220427A (ja) * 1985-03-27 1986-09-30 Hitachi Ltd 半導体装置の製造方法

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS49110275A (ja) * 1973-02-20 1974-10-21
JPS49110276A (ja) * 1973-02-21 1974-10-21
JPS57178315A (en) * 1981-04-27 1982-11-02 Nippon Telegr & Teleph Corp <Ntt> Manufacture of semiconductor single crystal
JPS5934631A (ja) * 1982-08-23 1984-02-25 Toshiba Corp 半導体装置製造方法
JPS61217575A (ja) * 1985-03-20 1986-09-27 Hitachi Ltd 光化学気相薄膜形成装置及び方法
JPS61220427A (ja) * 1985-03-27 1986-09-30 Hitachi Ltd 半導体装置の製造方法

Also Published As

Publication number Publication date
JP2544156B2 (ja) 1996-10-16

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