JPS57155723A - Epitaxial growth method - Google Patents

Epitaxial growth method

Info

Publication number
JPS57155723A
JPS57155723A JP4150881A JP4150881A JPS57155723A JP S57155723 A JPS57155723 A JP S57155723A JP 4150881 A JP4150881 A JP 4150881A JP 4150881 A JP4150881 A JP 4150881A JP S57155723 A JPS57155723 A JP S57155723A
Authority
JP
Japan
Prior art keywords
tank
gas
grown
gaas
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP4150881A
Other languages
Japanese (ja)
Other versions
JPH0445973B2 (en
Inventor
Yasoo Harada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sanyo Electric Co Ltd
Sanyo Denki Co Ltd
Original Assignee
Sanyo Electric Co Ltd
Sanyo Denki Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sanyo Electric Co Ltd, Sanyo Denki Co Ltd filed Critical Sanyo Electric Co Ltd
Priority to JP4150881A priority Critical patent/JPS57155723A/en
Publication of JPS57155723A publication Critical patent/JPS57155723A/en
Publication of JPH0445973B2 publication Critical patent/JPH0445973B2/ja
Granted legal-status Critical Current

Links

Abstract

PURPOSE: To permit introduction of a growth gas to a reaction system by a method wherein the growth gas is sealed to a tank arranged adjacent the reaction system and the pressure of the tank is set higher than that in the reaction system.
CONSTITUTION: A reaction chamber 10 is placed in a pressure reduced condition by a vacuum suction pump 25 under a condition wherein AsH3+H2 is supplied from a third gas supply system 15. At the same time, GaAs growth gas is sealed at a predetermined pressure to tank T1, T2 in a first gas supply system 13 and GaAl growth gas is sealed to tank T3, T4 in a second gas supply system 14, further a substrate A is heated, thereafter a valve V2 is opened, the GaAs is grown on the surface of the substrate A with the gas contained in the tank T1, and successively GaAs is grown on the substrate surface by using the gas contained in the tank T2. Further, GaAlAs is grown as well by using the gas in the tank T3. During this processing, GaAs is grown on the surface of te substrate B in a similar manner.
COPYRIGHT: (C)1982,JPO&Japio
JP4150881A 1981-03-20 1981-03-20 Epitaxial growth method Granted JPS57155723A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4150881A JPS57155723A (en) 1981-03-20 1981-03-20 Epitaxial growth method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4150881A JPS57155723A (en) 1981-03-20 1981-03-20 Epitaxial growth method

Publications (2)

Publication Number Publication Date
JPS57155723A true JPS57155723A (en) 1982-09-25
JPH0445973B2 JPH0445973B2 (en) 1992-07-28

Family

ID=12610298

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4150881A Granted JPS57155723A (en) 1981-03-20 1981-03-20 Epitaxial growth method

Country Status (1)

Country Link
JP (1) JPS57155723A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0375682U (en) * 1989-11-24 1991-07-30
JPH04137523A (en) * 1990-09-27 1992-05-12 Shimadzu Corp Function diagnosing device for thin film forming device
JP2010087231A (en) * 2008-09-30 2010-04-15 Tokyo Electron Ltd Vacuum processing device

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5136587A (en) * 1974-04-06 1976-03-27 Int Standard Electric Corp
JPS54124897A (en) * 1978-03-07 1979-09-28 Thomson Csf Method and apparatus for forming epitaxial layer of indium phosphide in gas phase
JPS5586112A (en) * 1978-12-25 1980-06-28 Toshiba Corp Vapor phase growth method for 3-5 group compound semiconductor

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5136587A (en) * 1974-04-06 1976-03-27 Int Standard Electric Corp
JPS54124897A (en) * 1978-03-07 1979-09-28 Thomson Csf Method and apparatus for forming epitaxial layer of indium phosphide in gas phase
JPS5586112A (en) * 1978-12-25 1980-06-28 Toshiba Corp Vapor phase growth method for 3-5 group compound semiconductor

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0375682U (en) * 1989-11-24 1991-07-30
JPH04137523A (en) * 1990-09-27 1992-05-12 Shimadzu Corp Function diagnosing device for thin film forming device
JP2010087231A (en) * 2008-09-30 2010-04-15 Tokyo Electron Ltd Vacuum processing device

Also Published As

Publication number Publication date
JPH0445973B2 (en) 1992-07-28

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