JPS6477173A - Vertical mosfet - Google Patents

Vertical mosfet

Info

Publication number
JPS6477173A
JPS6477173A JP62233805A JP23380587A JPS6477173A JP S6477173 A JPS6477173 A JP S6477173A JP 62233805 A JP62233805 A JP 62233805A JP 23380587 A JP23380587 A JP 23380587A JP S6477173 A JPS6477173 A JP S6477173A
Authority
JP
Japan
Prior art keywords
region
low concentration
base region
concentration
gate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62233805A
Other languages
Japanese (ja)
Inventor
Yasuo Sugimoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP62233805A priority Critical patent/JPS6477173A/en
Publication of JPS6477173A publication Critical patent/JPS6477173A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1095—Body region, i.e. base region, of DMOS transistors or IGBTs

Abstract

PURPOSE:To set a gate cut-off voltage freely and with high repeatability and to enlarge the safe operating region by a method wherein a base region is of a two-layer structure of a high and low impurity concentration layers and a channel is formed on a low concentration base region. CONSTITUTION:A high impurity concentration base region 14 is formed in a low concentration drain region 2 on a high concentration drain region 1. A P-type low concentration base region 15 is formed in an N-type low concentration epitaxial layer 16 formed on the low concentration drain region 2. In the low concentration base region 15, an N-type source region 4 and a gate electrode 7 facing a channel forming region 17 through the intermediary of a gate oxide film 6 are formed. A drain electrode 8 and a source electrode 9 are formed. In a structure of this design, with the base region 14 being high in impurity concentration, the parasitic transistor hFE may be smaller and, with the channel forming region 17 present in the low concentration base region 15, the gate cut-off voltage may be lower.
JP62233805A 1987-09-18 1987-09-18 Vertical mosfet Pending JPS6477173A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62233805A JPS6477173A (en) 1987-09-18 1987-09-18 Vertical mosfet

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62233805A JPS6477173A (en) 1987-09-18 1987-09-18 Vertical mosfet

Publications (1)

Publication Number Publication Date
JPS6477173A true JPS6477173A (en) 1989-03-23

Family

ID=16960861

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62233805A Pending JPS6477173A (en) 1987-09-18 1987-09-18 Vertical mosfet

Country Status (1)

Country Link
JP (1) JPS6477173A (en)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62150769A (en) * 1985-12-24 1987-07-04 Fuji Electric Co Ltd Semiconductor device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62150769A (en) * 1985-12-24 1987-07-04 Fuji Electric Co Ltd Semiconductor device

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