JPS647564A - Formation of gate electrode of mos transistor - Google Patents

Formation of gate electrode of mos transistor

Info

Publication number
JPS647564A
JPS647564A JP16092387A JP16092387A JPS647564A JP S647564 A JPS647564 A JP S647564A JP 16092387 A JP16092387 A JP 16092387A JP 16092387 A JP16092387 A JP 16092387A JP S647564 A JPS647564 A JP S647564A
Authority
JP
Japan
Prior art keywords
polycrystalline silicon
doped
gate electrode
polycrystalline
etching
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP16092387A
Other languages
English (en)
Inventor
Yukihiro Ushiku
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP16092387A priority Critical patent/JPS647564A/ja
Publication of JPS647564A publication Critical patent/JPS647564A/ja
Pending legal-status Critical Current

Links

JP16092387A 1987-06-30 1987-06-30 Formation of gate electrode of mos transistor Pending JPS647564A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16092387A JPS647564A (en) 1987-06-30 1987-06-30 Formation of gate electrode of mos transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16092387A JPS647564A (en) 1987-06-30 1987-06-30 Formation of gate electrode of mos transistor

Publications (1)

Publication Number Publication Date
JPS647564A true JPS647564A (en) 1989-01-11

Family

ID=15725206

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16092387A Pending JPS647564A (en) 1987-06-30 1987-06-30 Formation of gate electrode of mos transistor

Country Status (1)

Country Link
JP (1) JPS647564A (ja)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4978626A (en) * 1988-09-02 1990-12-18 Motorola, Inc. LDD transistor process having doping sensitive endpoint etching
US5032535A (en) * 1988-04-26 1991-07-16 Kabushiki Kaisha Toshiba Method of manufacturing semiconductor device
US5238859A (en) * 1988-04-26 1993-08-24 Kabushiki Kaisha Toshiba Method of manufacturing semiconductor device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5032535A (en) * 1988-04-26 1991-07-16 Kabushiki Kaisha Toshiba Method of manufacturing semiconductor device
US5238859A (en) * 1988-04-26 1993-08-24 Kabushiki Kaisha Toshiba Method of manufacturing semiconductor device
US4978626A (en) * 1988-09-02 1990-12-18 Motorola, Inc. LDD transistor process having doping sensitive endpoint etching

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