JPS64745A - Wiring structure of semiconductor device - Google Patents

Wiring structure of semiconductor device

Info

Publication number
JPS64745A
JPS64745A JP15569687A JP15569687A JPS64745A JP S64745 A JPS64745 A JP S64745A JP 15569687 A JP15569687 A JP 15569687A JP 15569687 A JP15569687 A JP 15569687A JP S64745 A JPS64745 A JP S64745A
Authority
JP
Japan
Prior art keywords
conductive material
wirings
layer
insulating layer
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15569687A
Other languages
Japanese (ja)
Other versions
JPH01745A (en
Inventor
Mikio Ota
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Original Assignee
Seiko Epson Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp filed Critical Seiko Epson Corp
Priority to JP15569687A priority Critical patent/JPS64745A/en
Publication of JPH01745A publication Critical patent/JPH01745A/en
Publication of JPS64745A publication Critical patent/JPS64745A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE: To improve the coatability of an insulating layer without reducing the sectional area of a wiring by forming a second conductive material consisting of the material of the same kind as or a different kind from a first conductive material only to the periphery or side face of the wiring formed by the first conductive material.
CONSTITUTION: An insulating layer 102, a first conductive material layer 103 and a photo-resist layer 104 are shaped onto a wafer 101. One parts of the conductive material layer 103 are removed through a photoetching process, thus forming wirings 105. A second conductive material layer 106 is shaped onto the insulating layer 102 to which the wirings 105 are formed, and the second conductive material layer 106 is etched until the insulating layer 102 is exposed between the wirings 105 without through the photoetching process, thus leaving second conductive material layers 107 only around the wirings 105. Accordingly, the wirings having larger sectional areas can be formed, thus improving electro-migration resistance, then enhancing the reliability of a semiconductor device.
COPYRIGHT: (C)1989,JPO&Japio
JP15569687A 1987-06-23 1987-06-23 Wiring structure of semiconductor device Pending JPS64745A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15569687A JPS64745A (en) 1987-06-23 1987-06-23 Wiring structure of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15569687A JPS64745A (en) 1987-06-23 1987-06-23 Wiring structure of semiconductor device

Publications (2)

Publication Number Publication Date
JPH01745A JPH01745A (en) 1989-01-05
JPS64745A true JPS64745A (en) 1989-01-05

Family

ID=15611530

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15569687A Pending JPS64745A (en) 1987-06-23 1987-06-23 Wiring structure of semiconductor device

Country Status (1)

Country Link
JP (1) JPS64745A (en)

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