JPS647040B2 - - Google Patents

Info

Publication number
JPS647040B2
JPS647040B2 JP59077625A JP7762584A JPS647040B2 JP S647040 B2 JPS647040 B2 JP S647040B2 JP 59077625 A JP59077625 A JP 59077625A JP 7762584 A JP7762584 A JP 7762584A JP S647040 B2 JPS647040 B2 JP S647040B2
Authority
JP
Japan
Prior art keywords
rod
polycrystalline
single crystal
raw material
silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP59077625A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6065787A (ja
Inventor
Herutsuaa Haintsu
Henzeru Uorufugangu
Matsuzatsuku Gyuntaa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
WATSUKAA HIEMITOROONITSUKU G FUYUURU EREKUTOROONIKU GURUNTOSHUTOTSUFUE MBH
Original Assignee
WATSUKAA HIEMITOROONITSUKU G FUYUURU EREKUTOROONIKU GURUNTOSHUTOTSUFUE MBH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by WATSUKAA HIEMITOROONITSUKU G FUYUURU EREKUTOROONIKU GURUNTOSHUTOTSUFUE MBH filed Critical WATSUKAA HIEMITOROONITSUKU G FUYUURU EREKUTOROONIKU GURUNTOSHUTOTSUFUE MBH
Publication of JPS6065787A publication Critical patent/JPS6065787A/ja
Publication of JPS647040B2 publication Critical patent/JPS647040B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
JP59077625A 1983-09-20 1984-04-19 転位のないケイ素単結晶ロツドの製造法 Granted JPS6065787A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE19833333960 DE3333960A1 (de) 1983-09-20 1983-09-20 Verfahren zur herstellung von versetzungsfreien einkristallstaeben aus silicium
DE3333960.0 1983-09-20

Publications (2)

Publication Number Publication Date
JPS6065787A JPS6065787A (ja) 1985-04-15
JPS647040B2 true JPS647040B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1989-02-07

Family

ID=6209586

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59077625A Granted JPS6065787A (ja) 1983-09-20 1984-04-19 転位のないケイ素単結晶ロツドの製造法

Country Status (4)

Country Link
US (1) US4722764A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
EP (1) EP0142666A3 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JP (1) JPS6065787A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
DE (1) DE3333960A1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10907406B2 (en) 2011-08-26 2021-02-02 Hunter Douglas Inc. Cordless retractable roller shade for window coverings

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4921026A (en) * 1988-06-01 1990-05-01 Union Carbide Chemicals And Plastics Company Inc. Polycrystalline silicon capable of yielding long lifetime single crystalline silicon
JP2516823B2 (ja) * 1990-02-28 1996-07-24 信越半導体株式会社 浮遊帯域融解法による単結晶シリコン製造用の棒状多結晶シリコン及びその製造方法
EP0450494B1 (en) * 1990-03-30 1996-06-19 Sumitomo Sitix Corporation Manufacturing method for single-crystal silicon
JP2874722B2 (ja) * 1993-06-18 1999-03-24 信越半導体株式会社 シリコン単結晶の成長方法及び装置
JP3274246B2 (ja) * 1993-08-23 2002-04-15 コマツ電子金属株式会社 エピタキシャルウェーハの製造方法
US5935328A (en) * 1997-11-25 1999-08-10 Memc Electronic Materials, Inc. Apparatus for use in crystal pulling
US6090198A (en) * 1998-12-07 2000-07-18 Seh America, Inc. Method for reducing thermal shock in a seed crystal during growth of a crystalline ingot
US6514337B2 (en) 2001-02-07 2003-02-04 Seh America, Inc. Method of growing large-diameter dislocation-free<110> crystalline ingots
JP5318365B2 (ja) * 2007-04-24 2013-10-16 Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 シリコン結晶素材及びこれを用いたｆｚシリコン単結晶の製造方法
CN101717990A (zh) * 2008-10-10 2010-06-02 江西赛维Ldk太阳能高科技有限公司 高纯多晶硅棒作为供料棒在单晶硅区域熔炼法中的应用以及制备方法
EP3181734A1 (en) * 2015-12-16 2017-06-21 Total Marketing Services Manufacturing method of a silicon single crystal and silicon wafer production facility
JP7050581B2 (ja) * 2018-06-04 2022-04-08 信越化学工業株式会社 多結晶シリコンロッドの選別方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1519868B2 (de) * 1965-03-18 1971-07-29 Siemens AG, 1000 Berlin u 8000 München Verfahren zum herstellen einer faserstruktur in einem koerper aus einer halbleitenden verbindung
US3416898A (en) * 1966-07-30 1968-12-17 Nippon Electric Co Method for growing high-melting-point single crystals and an apparatus therefor
DE2758888C2 (de) * 1977-12-30 1983-09-22 Wacker-Chemitronic Gesellschaft für Elektronik-Grundstoffe mbH, 8263 Burghausen Verfahren zur Herstellung reinster Siliciumeinkristalle
DE2808401C3 (de) * 1978-02-27 1984-07-19 Siemens AG, 1000 Berlin und 8000 München Verfahren zum Einstellen einer stabilen Schmelzzone beim tiegelfreien Zonenschmelzen eines Halbleiterkristallstabes
US4265859A (en) * 1978-05-31 1981-05-05 Energy Materials Corporation Apparatus for producing semiconductor grade silicon and replenishing the melt of a crystal growth system
US4200621A (en) * 1978-07-18 1980-04-29 Motorola, Inc. Sequential purification and crystal growth
US4270972A (en) * 1980-03-31 1981-06-02 Rockwell International Corporation Method for controlled doping semiconductor material with highly volatile dopant
DE3210141A1 (de) * 1982-03-19 1983-09-22 Siemens AG, 1000 Berlin und 8000 München Verfahren zum herstellen von fuer insbesondere solarzellen verwendbarem silicium

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10907406B2 (en) 2011-08-26 2021-02-02 Hunter Douglas Inc. Cordless retractable roller shade for window coverings

Also Published As

Publication number Publication date
DE3333960A1 (de) 1985-04-04
US4722764A (en) 1988-02-02
EP0142666A2 (de) 1985-05-29
EP0142666A3 (de) 1987-07-01
JPS6065787A (ja) 1985-04-15

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