JPS646947A - Manufacture of heat resistant positive type resist and heat resistant relief construction - Google Patents

Manufacture of heat resistant positive type resist and heat resistant relief construction

Info

Publication number
JPS646947A
JPS646947A JP63118030A JP11803088A JPS646947A JP S646947 A JPS646947 A JP S646947A JP 63118030 A JP63118030 A JP 63118030A JP 11803088 A JP11803088 A JP 11803088A JP S646947 A JPS646947 A JP S646947A
Authority
JP
Japan
Prior art keywords
heat resistant
manufacture
positive type
type resist
hydroxy polyamide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP63118030A
Other languages
English (en)
Other versions
JPH0612449B2 (ja
Inventor
Aane Herumuuto
Hanmaashiyumitsuto Aruberuto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Publication of JPS646947A publication Critical patent/JPS646947A/ja
Publication of JPH0612449B2 publication Critical patent/JPH0612449B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders
    • G03F7/0233—Macromolecular quinonediazides; Macromolecular additives, e.g. binders characterised by the polymeric binders or the macromolecular additives other than the macromolecular quinonediazides
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/106—Binder containing
    • Y10S430/107—Polyamide or polyurethane
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/156—Precursor compound

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Macromolecular Compounds Obtained By Forming Nitrogen-Containing Linkages In General (AREA)
  • Polyamides (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Polymers With Sulfur, Phosphorus Or Metals In The Main Chain (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
JP63118030A 1987-05-18 1988-05-13 耐熱性のポジ型レジスト及び耐熱性のレリーフ構造体の製造方法 Expired - Lifetime JPH0612449B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE3716627 1987-05-18
DE3716627.1 1987-05-18

Publications (2)

Publication Number Publication Date
JPS646947A true JPS646947A (en) 1989-01-11
JPH0612449B2 JPH0612449B2 (ja) 1994-02-16

Family

ID=6327803

Family Applications (1)

Application Number Title Priority Date Filing Date
JP63118030A Expired - Lifetime JPH0612449B2 (ja) 1987-05-18 1988-05-13 耐熱性のポジ型レジスト及び耐熱性のレリーフ構造体の製造方法

Country Status (4)

Country Link
US (1) US4849051A (ja)
EP (1) EP0291779B1 (ja)
JP (1) JPH0612449B2 (ja)
DE (1) DE3850809D1 (ja)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2005010616A1 (ja) * 2003-07-29 2005-02-03 Asahi Kasei Emd Corporation ポジ型感光性樹脂組成物
WO2005069075A1 (ja) 2004-01-14 2005-07-28 Hitachi Chemical Dupont Microsystems Ltd. 感光性重合体組成物、パターンの製造法及び電子部品

Families Citing this family (47)

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US5037720A (en) * 1987-07-21 1991-08-06 Hoechst Celanese Corporation Hydroxylated aromatic polyamide polymer containing bound naphthoquinone diazide photosensitizer, method of making and use
US5019482A (en) * 1987-08-12 1991-05-28 Asahi Kasei Kogyo Kabushiki Kaisha Polymer/oxime ester/coumarin compound photosensitive composition
DE58908012D1 (de) * 1989-03-20 1994-08-11 Siemens Ag Lichtempfindliches Gemisch.
EP0391196A3 (de) * 1989-04-06 1991-02-27 Siemens Aktiengesellschaft Herstellung von Hydroxypolyamiden
DE59009756D1 (de) * 1989-04-06 1995-11-16 Siemens Ag Herstellung hochwärmebeständiger Reliefstrukturen.
FI901655A0 (fi) * 1989-05-02 1990-04-02 Siemens Ag Kapacitiv fuktsensor.
US5114826A (en) * 1989-12-28 1992-05-19 Ibm Corporation Photosensitive polyimide compositions
DE59010552D1 (de) * 1990-03-29 1996-12-05 Siemens Ag Hochwärmebeständige Negativresists und Verfahren zur Herstellung hochwärmebeständiger Reliefstrukturen
EP0459395B1 (en) * 1990-05-29 1999-08-18 Sumitomo Bakelite Company Limited Positive photo-sensitive resin composition
DE69128187T2 (de) * 1990-09-28 1998-03-26 Toshiba Kawasaki Kk Fotoempfindliche Harzzusammensetzung zum Herstellen eines Polyimidfilmmusters und Verfahren zum Herstellen eines Polyimidfilmmusters
EP0512339B1 (de) * 1991-05-07 1997-10-15 Siemens Aktiengesellschaft Hochwärmebeständige Positivresists und Verfahren zur Herstellung hochwärmebeständiger Reliefstrukturen
US5405661A (en) * 1992-08-14 1995-04-11 The Dow Chemical Company Fire resistant panel
EP0690494B1 (de) 1994-06-27 2004-03-17 Infineon Technologies AG Verbindungs- und Aufbautechnik für Multichip-Module
DE59600371D1 (de) * 1995-03-23 1998-09-03 Siemens Ag Verfahren zur Herstellung von Polybenzoxazol-Vorstufen und entsprechender Resistlösungen
DE59602852D1 (de) * 1995-06-19 1999-09-30 Siemens Ag Verfahren zur Herstellung von Poly-o-hydroxyamiden
EP0750003B1 (de) * 1995-06-19 2002-08-14 Infineon Technologies AG Verfahren zur Herstellung von Poly-o-hydroxyamiden
DE59606485D1 (de) * 1995-08-31 2001-04-05 Infineon Technologies Ag Verfahren zur Herstellung von Poly-o-hydroxyamiden und Poly-o-mercaptoamiden
DE59606488D1 (de) * 1995-08-31 2001-04-05 Infineon Technologies Ag Verfahren zur Herstellung von Poly-o-hydroxyamiden und Poly-o-mercaptoamiden
EP0761641B1 (de) * 1995-08-31 2001-03-21 Infineon Technologies AG Dicarbonsäurederivate und ihre Verwendung zur Herstellung von Poly-o-hydroxyamiden oder Poly-o-mercaptoamiden
DE59606486D1 (de) * 1995-08-31 2001-04-05 Infineon Technologies Ag Herstellung von Poly-o-hydroxyamiden und Poly-o-mercaptoamiden
DE59606489D1 (de) * 1995-08-31 2001-04-05 Infineon Technologies Ag Verfahren zur Herstellung von Poly-o-hydroxyamiden und Poly-o-mercaptoamiden
EP0765894B1 (de) * 1995-08-31 2001-02-28 Infineon Technologies AG Herstellung von Poly-o-hydroxyamiden und Poly-o-mercaptoamiden
EP0761717B1 (de) * 1995-08-31 2001-06-06 Infineon Technologies AG Verfahren zur Herstellung von Poly-o-hydroxyamiden und Poly-o-mercaptoamiden
EP0761719B1 (de) * 1995-08-31 2001-03-28 Infineon Technologies AG Verfahren zur Herstellung von Poly-o-hydroxyamiden und Poly-o-mercaptoamiden
TW502135B (en) 1996-05-13 2002-09-11 Sumitomo Bakelite Co Positive type photosensitive resin composition and process for preparing polybenzoxazole resin film by using the same
EP0848028B1 (de) * 1996-12-11 2004-02-18 Infineon Technologies AG Herstellung von Polybenzoxazol- und Polybenzothiazol-Vorstufen
US6207356B1 (en) 1996-12-31 2001-03-27 Sumitomo Bakelite Company Limited Method for the pattern-processing of photosensitive resin composition
EP0852341B1 (en) * 1997-01-03 2001-08-29 Sumitomo Bakelite Company Limited Method for the pattern-processing of photosensitive resin composition
DE19741437A1 (de) * 1997-09-19 1999-04-01 Siemens Ag Elektronisches Bauteil mit verbesserter Gehäusepreßmasse
EP0905170B1 (de) * 1997-09-24 2013-10-30 Qimonda AG Polybenzoxazol- und Polybenzothiazol-Vorstufen
DE59814201D1 (de) * 1997-09-24 2008-05-15 Infineon Technologies Ag Polybenzoxazol- und Polybenzothiazol-Vorstufen
US6177225B1 (en) 1998-10-01 2001-01-23 Arch Specialty Chemicals, Inc. Photosensitive resin compositions
US6214516B1 (en) * 1998-10-01 2001-04-10 Arch Specialty Chemicals, Inc. Photosensitive resin compositions
JP2002341536A (ja) 2001-05-21 2002-11-27 Kodak Polychrome Graphics Japan Ltd ネガ型感光性組成物およびネガ型感光性平版印刷版
DE10125372B4 (de) 2001-05-23 2007-09-13 Infineon Technologies Ag Mischung zur Verwendung als Antireflexionsschicht, Substrat mit einer Antireflexionsschicht und Verfahren zur Herstellung einer Antireflexionsschicht
DE10145471A1 (de) * 2001-09-14 2003-04-17 Infineon Technologies Ag Fotosensitive Formulierung für Pufferschichten und Verwendungen dazu
DE10145469B4 (de) * 2001-09-14 2006-07-06 Infineon Technologies Ag Poly-o-hydroxyamid und Verfahren zu seiner Weiterverarbeitung zu Polybenzoxazol
DE10145472A1 (de) * 2001-09-14 2003-04-17 Infineon Technologies Ag Fotosensitive Formulierung für Pufferschichten und Verwendungen dazu
JP4317875B2 (ja) * 2003-03-11 2009-08-19 フジフィルム・エレクトロニック・マテリアルズ・ユーエスエイ・インコーポレイテッド 新規な感光性樹脂組成物
US6939659B2 (en) * 2003-03-11 2005-09-06 Arch Specialty Chemicals, Inc. Photosensitive resin compositions
TW200512543A (en) * 2003-08-06 2005-04-01 Sumitomo Bakelite Co Polyamide resin, positive-working photosensitive resin composition, method for producing pattern-formed resin film, semiconductor device, display device, and method for producing the semiconductor device and the display device
KR101278517B1 (ko) 2005-06-03 2013-06-26 후지필름 일렉트로닉 머티리얼스 유.에스.에이., 아이엔씨. 신규의 감광성 수지 조성물
JP2008546204A (ja) * 2005-06-03 2008-12-18 フジフィルム・エレクトロニック・マテリアルズ・ユーエスエイ・インコーポレイテッド 前処理組成物
KR101523798B1 (ko) 2007-09-06 2015-05-28 도레이 카부시키가이샤 폴리아미드의 제조 방법 및 수지 조성물
CN102770509B (zh) * 2009-10-14 2015-01-28 瑞克莱姆股份有限公司 热解工艺和产物
TWI483968B (zh) * 2013-09-17 2015-05-11 Daxin Materials Corp 聚合物、液晶配向劑、液晶配向膜以及液晶顯示元件
KR102605655B1 (ko) 2017-06-16 2023-11-23 후지필름 일렉트로닉 머티리얼스 유.에스.에이., 아이엔씨. 다층 구조물

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US30186A (en) * 1860-09-25 John j
US2904537A (en) * 1955-10-28 1959-09-15 Du Pont Polybenzoxazoles
US3332907A (en) * 1963-06-17 1967-07-25 Du Pont Oxy aromatic polyamides and process for preparation
FR1467620A (fr) * 1965-02-09 1967-01-27 Gen Electric Dérivés de polyhydroxyamides et procédé pour leur production
FR1548308A (ja) * 1967-06-05 1968-12-06
FR2189454B1 (ja) * 1972-06-21 1974-12-27 France Etat
NL177718C (nl) * 1973-02-22 1985-11-01 Siemens Ag Werkwijze ter vervaardiging van reliefstructuren uit warmte-bestendige polymeren.
DE2437348B2 (de) * 1974-08-02 1976-10-07 Ausscheidung in: 24 62 105 Verfahren zur herstellung von reliefstrukturen
US4093461A (en) * 1975-07-18 1978-06-06 Gaf Corporation Positive working thermally stable photoresist composition, article and method of using
DE2647004C3 (de) * 1976-10-18 1981-09-10 Aleksej Jakovlevič Černichov Verfahren zur Herstellung von Polybenzoxazolen
DE2931297A1 (de) * 1979-08-01 1981-02-19 Siemens Ag Waermebestaendige positivresists und verfahren zur herstellung waermebestaendiger reliefstrukturen
US4415653A (en) * 1981-05-07 1983-11-15 Honeywell Inc. Method of making sensitive positive electron beam resists
US4568601A (en) * 1984-10-19 1986-02-04 International Business Machines Corporation Use of radiation sensitive polymerizable oligomers to produce polyimide negative resists and planarized dielectric components for semiconductor structures
DE3773110D1 (de) * 1986-10-02 1991-10-24 Hoechst Celanese Corp Polyamide mit hexafluorisopropyliden-gruppen, diese enthaltende positiv arbeitende lichtempfindliche gemische und damit hergestellte aufzeichnungsmaterialien.

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2005010616A1 (ja) * 2003-07-29 2005-02-03 Asahi Kasei Emd Corporation ポジ型感光性樹脂組成物
WO2005069075A1 (ja) 2004-01-14 2005-07-28 Hitachi Chemical Dupont Microsystems Ltd. 感光性重合体組成物、パターンの製造法及び電子部品
US8231959B2 (en) 2004-01-14 2012-07-31 Hitachi Chemical Dupont Microsystems Ltd. Photosensitive polymer composition, method of producing pattern and electronic parts
US8852726B2 (en) 2004-01-14 2014-10-07 Hitachi Chemical Dupont Microsystems Ltd. Photosensitive polymer composition, method of producing pattern and electronic parts

Also Published As

Publication number Publication date
EP0291779A2 (de) 1988-11-23
US4849051A (en) 1989-07-18
DE3850809D1 (de) 1994-09-01
EP0291779A3 (en) 1989-09-20
JPH0612449B2 (ja) 1994-02-16
EP0291779B1 (de) 1994-07-27

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