JPS646855A - Production of moisture sensitive element - Google Patents

Production of moisture sensitive element

Info

Publication number
JPS646855A
JPS646855A JP16333487A JP16333487A JPS646855A JP S646855 A JPS646855 A JP S646855A JP 16333487 A JP16333487 A JP 16333487A JP 16333487 A JP16333487 A JP 16333487A JP S646855 A JPS646855 A JP S646855A
Authority
JP
Japan
Prior art keywords
substrate
silicon nitride
moisture sensitive
films
boundary lines
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP16333487A
Other languages
Japanese (ja)
Inventor
Koji Murakami
Takayoshi Iwai
Hiromi Kobayashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP16333487A priority Critical patent/JPS646855A/en
Publication of JPS646855A publication Critical patent/JPS646855A/en
Pending legal-status Critical Current

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  • Investigating Or Analyzing Materials By The Use Of Fluid Adsorption Or Reactions (AREA)

Abstract

PURPOSE:To prevent the generation of damages in the parts of moisture sensitive films and substrate, etc., at the time of dividing the substrate by forming silicon nitride films having the weak adhesion to a hydrophobic org. material to be formed as the moisture sensitive films at a required width to the parts of the dividing boundary lines on the substrate. CONSTITUTION:The silicon nitride film 3 is deposited to a required thickness on the substrate 1 and a mask is brought into tight contact with the surface thereof. The patterns of the prescribed width including the boundary lines 2 are formed on the substrate 1 when the silicon nitride film 3 except the patterns is removed by an RIE method and the mask is removed. The hydrophobic org. material is then stuck to element forming regions 5 and is subjected to heating and photoirradiation to induce crystallization and copolymn. reaction, by which the org. material is cured and the moisture sensitive films 6 are formed to the parts except the silicon nitride films 3. Blades of a dicer are pressed to the substrate along the boundary lines 2 from above the silicon nitride films 3 of the prescribed width, by which the substrate 1 is divided and the chips of moisture sensitive elements are formed.
JP16333487A 1987-06-30 1987-06-30 Production of moisture sensitive element Pending JPS646855A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16333487A JPS646855A (en) 1987-06-30 1987-06-30 Production of moisture sensitive element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16333487A JPS646855A (en) 1987-06-30 1987-06-30 Production of moisture sensitive element

Publications (1)

Publication Number Publication Date
JPS646855A true JPS646855A (en) 1989-01-11

Family

ID=15771885

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16333487A Pending JPS646855A (en) 1987-06-30 1987-06-30 Production of moisture sensitive element

Country Status (1)

Country Link
JP (1) JPS646855A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE112010005649T5 (en) 2010-06-08 2013-11-28 Hitachi, Ltd. Isolation transformer and power source

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE112010005649T5 (en) 2010-06-08 2013-11-28 Hitachi, Ltd. Isolation transformer and power source

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