JPS6467893A - Manufacture of electroluminescence display panel - Google Patents
Manufacture of electroluminescence display panelInfo
- Publication number
- JPS6467893A JPS6467893A JP62223155A JP22315587A JPS6467893A JP S6467893 A JPS6467893 A JP S6467893A JP 62223155 A JP62223155 A JP 62223155A JP 22315587 A JP22315587 A JP 22315587A JP S6467893 A JPS6467893 A JP S6467893A
- Authority
- JP
- Japan
- Prior art keywords
- insulating film
- resistivity
- luminous layer
- low
- manufacture
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000005401 electroluminescence Methods 0.000 title 1
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000003153 chemical reaction reagent Substances 0.000 abstract 2
- 230000008021 deposition Effects 0.000 abstract 2
- 238000005530 etching Methods 0.000 abstract 2
- 230000008595 infiltration Effects 0.000 abstract 1
- 238000001764 infiltration Methods 0.000 abstract 1
- 239000002184 metal Substances 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Landscapes
- Electroluminescent Light Sources (AREA)
Abstract
PURPOSE:To prevent the infiltration of an etching reagent through a back electrode and improve the reliability by forming an insulating film with the desired thickness using a dedicated metallic mask on the end section of a luminous layer deposition surface. CONSTITUTION:A transparent front electrode 22 is formed on a transparent substrate 21, and an insulating film 23 with high resistivity is formed on the front electrode 22. The first low-resistivity insulating film 24, a luminous layer 25, the second low-resistivity insulating film 26 are formed in this order on the high-resistivity insulating film 23 using the same metallic mask in the same vacuum. The metallic mask is then exchanged, a high-resistivity insulating film 27 is formed on the second low-resistivity insulating film 26, the metal mask is exchanged again, and an insulating film 29 is formed at least on the end section of the deposition surface of the luminous layer 25. The luminous layer 25 is thereby prevented from being infringed by an etching reagent when a back electrode 28 is formed, and the reliability is improved.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62223155A JPS6467893A (en) | 1987-09-08 | 1987-09-08 | Manufacture of electroluminescence display panel |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62223155A JPS6467893A (en) | 1987-09-08 | 1987-09-08 | Manufacture of electroluminescence display panel |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6467893A true JPS6467893A (en) | 1989-03-14 |
Family
ID=16793654
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62223155A Pending JPS6467893A (en) | 1987-09-08 | 1987-09-08 | Manufacture of electroluminescence display panel |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6467893A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003115393A (en) * | 2001-10-02 | 2003-04-18 | Sony Corp | Organic electroluminescence element and its manufacturing method, image display equipment |
| JP2009004560A (en) * | 2007-06-21 | 2009-01-08 | Seiko Epson Corp | Semiconductor device, and manufacturing method therefor |
| JP2020198172A (en) * | 2019-05-31 | 2020-12-10 | パイオニア株式会社 | Light-emitting device |
-
1987
- 1987-09-08 JP JP62223155A patent/JPS6467893A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003115393A (en) * | 2001-10-02 | 2003-04-18 | Sony Corp | Organic electroluminescence element and its manufacturing method, image display equipment |
| JP2009004560A (en) * | 2007-06-21 | 2009-01-08 | Seiko Epson Corp | Semiconductor device, and manufacturing method therefor |
| JP2020198172A (en) * | 2019-05-31 | 2020-12-10 | パイオニア株式会社 | Light-emitting device |
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