KR20020076848A - ion beam e-beam have a ion beam assisted e-beam evaporator made platictype display panel a manufacturing process - Google Patents

Abstract

PURPOSE: A flat display device and method for manufacturing the same is provided to obtain a transparent conductive film having superior characteristics, while simplifying manufacturing processes and costs. CONSTITUTION: An ion gun for generating ion beams for ionizing gases like argon or oxygen and auxiliary beams for evaporating oxides like indium tin oxide, SnO2 and ZnO, is installed in an ion beam evaporator. A substrate made of a resin family including polymethyl methacrylate, polycarbonite and polyester, is embedded within the ion beam evaporator. A pattern mask produced through a PVD process is attached onto the substrate made of a resin family, and an evacuation process is performed by using a vacuum pump such that the internal pressure is 1 x 10¬-5 torr or lower. A transparent conductive film having a surface resistance of 10¥Ø/cm to 1K¥Ø/cm and a light transmittance of 80 percents or higher, is formed onto the substrate at a temperature lower than 100 Deg.C by the electron beam for evaporating oxides like indium tin oxide, SnO2 and ZnO and ion beam for ionizing gases like argon or oxygen.

Description

Resin-based flat panel display device completed with vacuum evaporator having ion beam auxiliary electron beam and method for manufacturing the same {ion beam e-beam have a ion beam assisted e-beam evaporator made platictype display panel a manufacturing process}

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a resin based flat panel display device and a manufacturing method thereof, and more particularly, to forming a thin film pattern in a physical vapor deposition (PVD) process, a liquid crystal display device (LCD), a plasma ITO (Imdium Tin Oxide) transparent electrode deposition film used as a key element when manufacturing flat panel displays (PDP: Plasma Display Panel) and EL, assists the ion beam on the resin substrate To form a transparent conductive film having a sheet resistance of 10 Ω / cm-1KΩ / cm and light transmittance of 80% or more at low temperature without deformation of resins such as polymethyl methacrylate (PMMA), polycarbonate (PC) and poly ethylene terephehalate (PET) The present invention relates to a resin flat panel display device completed with an ion beam assisted e-beam evaporator having an ion beam assisted electron beam, and a method of manufacturing the same.

In the image information age, much expectation is gathered in the display device which is the largest person in charge of information transmission. As a result, various flat label devices which have replaced the cathode ray tube have been developed and are rapidly spreading.

In particular, transparent conductive thin films such as transparent electrode (Indium Tin Oxide (ITO)) and SnO ₂ are coated on glass substrates, transparent electrode materials for touch panel screens, displays, surface heating elements, heat ray reflection materials, anti-glare films, etc. It has been developed and used in various electronic materials, building materials, window materials of transportation.

Currently, a product having a transparent conductive film coated on a transparent plastic such as a polyester film, polymethyl methacrylate (PMMA), and polycarbonate (polycarbonate) has been proposed, but it depends on imports.

As a method of manufacturing a transparent conductive film, there are chemical methods such as a spray method and a coating method, and physical vapor deposition using sputtering or vacuum deposition. In the case of physical vapor deposition using vacuum deposition, the main method is to evaporate an alloy of indium or indium-tin through an electron beam in an oxygen atmosphere, and in recent years, the physical weather is excellent in transmittance, conductivity and easy reproducibility. The vapor deposition method is mainly used.

However, the sputtering method is more expensive than the vacuum deposition equipment, and due to the process difficulty of sintering the oxide to form the target shape, the price of the target of ITO (Imdium Tin Oxide) is high and the low deposition rate eventually leads to It is directly connected to the price increase factor, and the target component ratio may be different from the original component ratio when the target is used repeatedly, and the thin film characteristics may be changed.In the case of physical vapor deposition using vacuum deposition, indium and indium-tin In order to obtain a transparent conductive film having excellent characteristics of the film when deposited in an oxygen atmosphere, a high temperature of 300 ° C. or more is required, so that it is impossible to form a transparent conductive film on a substrate having a low thermal deformation temperature such as plastic, and ITO (Imdium Tin Oxide). ) Directly evaporates ITO (Imdium Tin Oxide) with an electron beam. Since oxygen deficiency occurs due to decomposition of oxygen, a high temperature oxygen atmosphere is required. Thus, it has not been possible to form a transparent conductive film on a dendritic substrate by these methods.

Therefore, the resin-based ITO (Imdium Tin Oxide) transparent conductive film is an element of a liquid crystal display (LCD), a plasma display panel (PDP) and an EL (including a thin film electroluminescent device) display, the conventional pattern method Wet etching using hydrochloric acid-based solution or ferric chloride-based etching solution, and dry etching and laser irradiation using CH ₄ and H ₂ or CH ₃ and Ar ⁺ ions, which are one of the techniques described in US Pat. No. 517,401. Laser etching and the like have been widely used.

Also, a metal film such as titanium-tungsten (TiW) is formed on ITO (Imdium Tin Oxide) and then etched using a mask to improve pattern characteristics (Korean Patent No. 1996-012270). do.

As described above, conventional ITO (Imdium Tin Oxide) formation techniques and pattern formation techniques have many difficulties and problems in forming ITO (Imdium Tin Oxide) transparent conductive films on resin resins. Forming a pattern through the process of the degree had a problem such as causing the production yield and manufacturing cost increase due to defects. Therefore, at present, there is no product in which a transparent conductive film having excellent conductivity and light transmittance and a patterned transparent conductive film are present in plastic.

The present invention has been invented to solve the conventional problems as described above, the ion beam auxiliary provided with an ion gun capable of ionizing a gas, such as argon, oxygen, in the ion beam evaporator equipment that is less expensive than the sputter equipment Ion beam assisted e-beam with an ion beam assisted electron beam for depositing a transparent conductive film by a PVD process of forming a transparent ITO (Imdium Tin Oxide) electrode on a resin substrate through an ion beam assisted e-beam evaporator Resin-based flat panel display device completed with an evaporator and a method of manufacturing the same, which enables to form a pattern in a desired pattern without a separate process, thereby patterning electrodes by conventional dry etching and wet etching. Compared to the previous case, the electrode can be patterned even if six to seven steps are omitted, thus producing a transparent electrode (ITO (Imdium Tin Oxide) electrode) substrate. Maximize efficiency by increasing yield and productivity, and at least 85% transmittance and 10Ω / cm-1KΩ / cm It is possible to form a transparent conductive film having a sheet resistance of the present invention to manufacture a resin-based ITO (Imdium Tin Oxide) transparent conductive film products produced by sputtering, which is currently dependent on the total amount of imports at a lower price.

1 is a schematic diagram of an electron beam deposition apparatus for fabricating the patterned electrode of the present invention.

2 is a cross-sectional view showing a process for producing an application pattern of the present invention.

3 is a cross-sectional view showing a pattern manufacturing process according to the first embodiment of the present invention.

4 is a sectional view showing a pattern manufacturing process according to a second embodiment of the present invention.

5 is a sectional view showing a pattern manufacturing process according to a third embodiment of the present invention.

Figure 6 is a cross-sectional view showing that the deposited film is patterned in the intaglio patterned by the present invention.

<Explanation of symbols for the main parts of the drawings>

2-a, 3-a, 4-a, 5-a; Board Support

2-b, 4-b, 5-b; Pizza seat

3-c, 4-c, 5-c, 6-c; Substrate (Deposition)

3-d, 4-d, 5-d, 6-d; Pattern mask

The present invention is to improve the existing vacuum deposition equipment for manufacturing a transparent conductive film on a plastic substrate at a low temperature below 100 ℃ to form an ITO (Imdium Tin Oxide) transparent electrode during thin film deposition and at the same time to form a patterned deposition film using a pattern mask Power supply when emitting flat panel displays (Liquid Crystal Display (LCD), Plasma Display Panel (PDP), Electro Luminescent Display (ELD), ECD, EPID SPD, etc.) Transparent electrodes (including ITO (Imdium Tin Oxide), In / Sn, etc.) and insulator thin films (Y ₂ O ₃ , S ₂ O ₂ , TiO ₂ , BaTiO ₃ , Ta ₂ O ₅ , Al ₂ O ₃ ) It is characterized by depositing a transparent electrode on a resin system and directly patterning the transparent electrode without going through photoresist, coating, exposure, development, and etching process.

In the present invention, a gas, such as argon and oxygen, is ionized to deposit a transparent conductive film by a PVD process of forming a transparent ITO (Imdium Tin Oxide) electrode on a resin substrate in a known ion beam evaporator. A vacuum vapor deposition apparatus having an ion gun for generating an ion beam auxiliary electron beam, characterized in that it is installed, and an ion gun for generating an auxiliary electron beam capable of evaporating oxides such as ITO (Imdium Tin Oxide), SnO ₂ , ZnO, etc. Polymethyl methacrylate (Polymethyl Methacrylate), polycarbonate, poly in a vacuum evaporator (vacuum chamber) equipped with an ion beam assisted e-beam evaporator and evacuated to a pressure of 1 x 10 ^-5 Torr or less using a vacuum pump. An electron beam capable of evaporating oxides such as ITO (Imdium Tin Oxide), SnO ₂ , ZnO by embedding resin-based substrates such as esters, and forming In-O, Zn-O, Sn-O based as basic constituent elements; argon By assisting an ion beam capable of ionizing a gas such as oxygen and oxygen to obtain a transparent conductive film having a sheet resistance of up to 10 Ω / cm-1KΩ / cm and a light transmittance of 80% or more on a resin substrate at a low temperature of 100 ° C. or below. Here, the transparent conductive film on the resin substrate is formed of SiO ₂ , TiO ₂ , in order to improve adhesion between an ITO (Imdium Tin Oxide) thin film and a resin substrate such as polymethyl methacrylate (PMMA), polycarbonate (polyester) -polyester (PC), etc. After forming oxides such as Al ₂ O ₃ and ZrO _{2 with} a thickness of 500Å or less, ITO (Imdium Tin Oxide) transparent electrode is manufactured, and in order to deposit a thin film including a transparent conductive film, a resin-based substrate is required without any additional processing. Patterns are formed by closely depositing the pattern masks (2-a, 3-a, 4-a, 5-a) of the physical vapor deposition (PVD) process on 3-c, 4-c, 5-c) or PVD process where the evaporation source of the deposited film is located on the pattern mask (2-a, 3-a, 4-a, 5-a) The pattern thin film is directly formed using a pattern mask, or the evaporation source of the deposited film is positioned below the pattern masks (2-a, 3-a, 4-a, 5-a), and the pattern mask is formed by using a magnet. c, 4-c 5-c) may be formed in direct contact with each other so as not to be separated.

In this case, it is more effective to directly form the transparent electrode pattern of the resin-based planar strengthening coating on the flat panel display.

Referring to the present invention in detail based on the accompanying drawings, Figure 1 shows an ion beam assisted electron beam evaporator provided with an ion source of the present invention in an e-beam evaporator.

Formation of the ITO (Imdium-Tim-Oxide) transparent electrode and the manufacturing process of the pattern is a substrate support (deposited: polyester, polymethyl methacrylate (PMMA), polycarbonate, etc.) (2-a, 3-a, 4-a, 5-a), the substrate (3-c, 4-c, 5-c), ultrasonically cleaned with neutral detergent, deionized water, alcohol, etc., was mounted on the vacuum deposition equipment. Place and set the pattern mask (3-d, 4-d, 5-d). At this time, the substrate (deposited material) subjected to ultrasonic cleaning can be completely removed moisture using nitrogen gas, if necessary.

In addition, by placing the substrate (3-c, 4-c 5-c) on the substrate support (2-a, 3-a, 4-a, 5-a) and the pattern mask (3-d, 4-d, After setting 5-d), a substrate support which can rotate while supporting the resin substrate to form the transparent conductive film in the vacuum chamber is installed to face the electron beam evaporation source.

Using a vacuum pump, evacuate the internal pressure of the vacuum chamber to a pressure of 1 × 10 ^-5 torr or less.

Thereafter, when the deposition film is formed on the pattern masks 3-d, 4-d, and 5-d by the ion beam assisted electron beam deposition method, the deposition film is patterned and formed on the patterned intaglio portion as shown in FIG.

At this time, the thickness of the pattern masks (3-d, 4-d, 5-d) minimizes the shadow phenomenon caused by the pattern masks (3-d, 4-d, 5-d) during deposition. It is preferable to set so that it may become, and it manufactures in consideration of the pitch between electrode patterns, etc.

3 is a cross-sectional view illustrating a pattern manufacturing process of a thin film including a transparent conductive film and a metal electrode according to a first embodiment of the present invention.

The evaporation source for forming the deposited film is a method that can be used in the PVD process located on top of the pattern mask (3-d, 4-d, 5-d).

Into the substrate support (2-a, 3-a, 4-a, 5-a), the substrate (deposited product) (3-c, 4-c 5-c), which has been pretreated, is charged and a pattern mask (3) is placed thereon. After setting -d, 4-d and 5-d, the deposition proceeds and the pattern masks (3-d, 4-d and 5-d) are removed to form a thin film on the deposit.

4 is a cross-sectional view showing a thin film pattern manufacturing process according to a second embodiment of the present invention, which is shown in FIGS. 4 and 5 as a method in which an evaporation source can be used in a PVD process located below the pattern diagram. As described above, the material of the pattern masks (3-d, 4-d, 5-d) is formed by the magnetic force of the pattern masks (3-d, 4-d, 5-d) and the substrates (3-c, 4-c 5- c) to be in close contact with the substrate support (2-a, 3-a, 4-a, 5-a).

Since the process is all the same as described in the first embodiment.

5 is a cross-sectional view showing a process according to a third embodiment, which is a manufacturing method that can be used in a PVD process in which the first and second embodiments are mixed.

As described above, the transparent conductive film prepared according to the present invention has a visible light transmittance of 80% or more and a specific resistance of 3.0 × 10 ^-4 Ω㎝ or less, which shows excellent transmittance and specific resistance and is resistant to ITO (Imdium Tin Oxide) etching chemicals. By forming a metallic conductive film pattern by a wet etching method using a film as a masking layer, a transparent conductive substrate capable of preventing a phenomenon such as falling of a photoresist can be provided.

As described above, according to the present invention, an electron beam capable of evaporating oxides such as ITO (Imdium Tin Oxide), SnO ₂ , ZnO, etc. in a vacuum chamber (vacuum chamber) and the evaporation sources are ion beams for accurate chemical composition. Placed at a specific position with the electron beam in the same vacuum chamber as the source, and assists the ion beam on a resin substrate located opposite to the electron beam in the vacuum chamber to support PMMA (Polymethyl Methacrylate), PC (Polycarbonate), and PET (Poly Ethylene). Terephehalate) and the like, by forming a transparent conductive film having a sheet resistance of 10Ω / cm-1KΩ / cm and light transmittance of 80% or more at a low temperature of 100 ° C. where the resin is not deformed, not only the manufacturing process is simple but also transparent ITO ( Imdium Tin Oxide) Electrode Pattern In the process of depositing a transparent conductive film by PVD process, the deposition film is formed in a desired pattern without a separate process. Compared to the patterning of the electrode by dry etching and wet etching, the sputtering method forms a good electrode pattern even though 6 to 7 processes are omitted and forms the mainstream in the production of transparent conductive films. There is an advantage that can be produced a transparent conductive film of excellent characteristics at a low price.

Therefore, the maximum efficiency improvement can be expected in the production yield and output of the patterned transparent electrode.

Claims (5)

An ion beam capable of ionizing a gas such as argon and oxygen to deposit a transparent conductive film by a PVD process of forming a transparent ITO electrode on a resin substrate in a known ion beam evaporator, and an ITO (Imdium Tin Oxide), an ion gun that generates an auxiliary electron beam that can evaporate oxides such as SnO ₂ , ZnO, is installed, and resin-based substrates such as polymethyl methacrylate (polymethyl methacrylate), polycarbonate, and polyester are embedded thereon. The pattern mask of the physical vapor deposition (PVD) process is brought into close contact with each other, and the vacuum pressure is exhausted so that the internal pressure is 1 × 10 ^-5 Torr or less, and then the In-O, Zn-O, Is formed as a basic constituent element, and assists an electron beam capable of evaporating oxides such as ITO (Imdium Tin Oxide), SnO ₂ , ZnO, and an ion beam capable of ionizing gases such as argon and oxygen at a low temperature of 100 ° C. or lower. Resin Ion beam assisted e-beam having an ion beam auxiliary electron beam characterized by obtaining a resin based flat panel display element having a transparent conductive film having a sheet resistance of 10 kV / cm-1 KΩ / cm and a light transmittance of 80% or more on a substrate. Resin-based flat panel display device manufacturing method through a beam evaporator. Oxides such as SiO ₂ , TiO ₂ , Al ₂ O ₃ , and ZrO ₂ to improve adhesion on resin-based substrates such as ITO (Imdium Tin Oxide) thin films, polymethyl methacrylate (PMMA), and polycarbonate (polyester) -polyester (PC) After forming a thickness of 500Å or less, the visible light transmittance of 80% or more and the resistivity of 3.0 × 10 ^-4 Ω㎝ or less, showing excellent transmittance and specific resistance and masking a metal film resistant to ITO (Imdium Tin Oxide) etching chemicals A resin-based flat panel display device completed with an ion beam assisted e-beam evaporator, characterized in that a transparent conductive film is formed by wet etching a metallic conductive film pattern as a masking layer. The method of claim 1, When forming the transparent conductive film, the resin-based plate through the ion beam assisted e-beam evaporator, characterized in that the evaporation source of the deposited film directly forms the pattern thin film in the PVD process located on the pattern mask. Display element manufacturing method. The method of claim 1, When the transparent conductive film is formed, an evaporation source of the deposition film is positioned below the pattern mask, and the magnet is closely attached so that the pattern mask is not separated from the substrate, thereby directly forming a thin film pattern. Resin-based flat panel display device manufacturing method using an e-beam evaporator. The method of claim 2, The resin-based substrate forming the transparent conductive film pattern is formed by directly forming a flat-panel display transparent conductive film pattern on the plane-reinforced coating process, and completed with an ion beam assisted e-beam evaporator. Resin-type flat panel display device.