JPS61183810A - Transparent electrode - Google Patents
Transparent electrodeInfo
- Publication number
- JPS61183810A JPS61183810A JP60022561A JP2256185A JPS61183810A JP S61183810 A JPS61183810 A JP S61183810A JP 60022561 A JP60022561 A JP 60022561A JP 2256185 A JP2256185 A JP 2256185A JP S61183810 A JPS61183810 A JP S61183810A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- transparent
- thin film
- transparent conductive
- transparent electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000002985 plastic film Substances 0.000 claims description 35
- 239000010409 thin film Substances 0.000 claims description 17
- 229920003023 plastic Polymers 0.000 claims description 8
- 238000007733 ion plating Methods 0.000 claims description 6
- 239000010410 layer Substances 0.000 description 49
- 239000000758 substrate Substances 0.000 description 17
- 239000010408 film Substances 0.000 description 16
- 238000000034 method Methods 0.000 description 14
- 238000005452 bending Methods 0.000 description 12
- 229920006255 plastic film Polymers 0.000 description 10
- 238000001704 evaporation Methods 0.000 description 6
- 230000008020 evaporation Effects 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- 230000000052 comparative effect Effects 0.000 description 5
- 238000002834 transmittance Methods 0.000 description 5
- 229910052814 silicon oxide Inorganic materials 0.000 description 4
- 239000004695 Polyether sulfone Substances 0.000 description 3
- 239000004973 liquid crystal related substance Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 230000035699 permeability Effects 0.000 description 3
- 229920006393 polyether sulfone Polymers 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 3
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 229910003437 indium oxide Inorganic materials 0.000 description 2
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 108091008695 photoreceptors Proteins 0.000 description 2
- 238000003672 processing method Methods 0.000 description 2
- 238000001771 vacuum deposition Methods 0.000 description 2
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- 239000004952 Polyamide Substances 0.000 description 1
- 239000004721 Polyphenylene oxide Substances 0.000 description 1
- 241001422033 Thestylus Species 0.000 description 1
- VVTSZOCINPYFDP-UHFFFAOYSA-N [O].[Ar] Chemical compound [O].[Ar] VVTSZOCINPYFDP-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 229920001577 copolymer Polymers 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 229920001519 homopolymer Polymers 0.000 description 1
- 230000002209 hydrophobic effect Effects 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229920002492 poly(sulfone) Polymers 0.000 description 1
- 229920002647 polyamide Polymers 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 229920000570 polyether Polymers 0.000 description 1
- -1 polyethylene terephthalate Polymers 0.000 description 1
- 229920000139 polyethylene terephthalate Polymers 0.000 description 1
- 239000005020 polyethylene terephthalate Substances 0.000 description 1
- 229920000098 polyolefin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000009751 slip forming Methods 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 238000009489 vacuum treatment Methods 0.000 description 1
- 229920002554 vinyl polymer Polymers 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 238000004804 winding Methods 0.000 description 1
Landscapes
- Liquid Crystal (AREA)
- Light Receiving Elements (AREA)
- Non-Insulated Conductors (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、透明なプラスチックフィルム又はシートを基
板とした透明性を有する電極に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a transparent electrode using a transparent plastic film or sheet as a substrate.
更に詳しくは、透明導電性Ｚ利用した用途、たとえば、
液晶表示用電極、電場発光体用電極、タッチパネル用電
極、光導電性感光体用電極、等のエレクトロニクス・電
気の分野に広く利用され得る透明なプラスチックフィル
ム又はシートを基板とした透明電極に関する。More specifically, applications using transparent conductive Z, for example,
The present invention relates to a transparent electrode using a transparent plastic film or sheet as a substrate, which can be widely used in the fields of electronics and electricity, such as electrodes for liquid crystal displays, electrodes for electroluminescent bodies, electrodes for touch panels, and electrodes for photoconductive photoreceptors.
現在汎用されている透明電極は、ガラス上に酸化スズ膜
や、Ｉ Ｔｏ （Ｉｎｄｉｕｍ Ｔｉｎ ０ｘｉｄｅ
）膜、等を形成してなるものである。しかしながら、基
材がガラスであるために、可とう性、加工性などに劣り
、用途によっては好ましくない。そこで、近年、プラス
チックフィルム又はシートを基材とした透明電極が、可
とう性、加工性、耐衝撃性、重量などの面で注目されて
きた。Transparent electrodes that are currently widely used include a tin oxide film on glass or I To (Indium Tin Oxide).
) film, etc. However, since the base material is glass, it has poor flexibility, processability, etc., and is not preferred depending on the application. Therefore, in recent years, transparent electrodes based on plastic films or sheets have attracted attention in terms of flexibility, processability, impact resistance, weight, etc.
一方、透明導電層χプラスチックフィルム又はシート基
板に直接設けて透明電極とした場合、耐透湿性、耐通気
性、及び該層と該基板との密着性において問題があった
。更に詳述すれば、耐透湿性、耐通気性の点においては
、プラスチックフィルム又はシート基板の厚みを太き（
するか、ガスバリヤ−性、水蒸気バリヤー性の高いプラ
スチックフィルムを該基板に積層すればある程度満足し
たものが得られるが、該基板と透明導電層との密着性に
おいて未だ満足なものは得られていない。On the other hand, when the transparent conductive layer χ was provided directly on a plastic film or sheet substrate to form a transparent electrode, there were problems in moisture permeability, air resistance, and adhesion between the layer and the substrate. More specifically, in terms of moisture permeability and air permeability, the thickness of the plastic film or sheet substrate can be increased (
Alternatively, if a plastic film with high gas barrier properties and water vapor barrier properties is laminated on the substrate, a somewhat satisfactory result can be obtained, but satisfactory adhesion between the substrate and the transparent conductive layer has not yet been obtained. .
近年、透明導電層を５ｉｎ２−、 （０≦ｘ≦１）層を
介してプラスチックフィルム又はシート基板に設ける方
法が考案された。しかしながら、プラスチックフィルム
又はシートを基板とした透明電極に対する要求性能の高
まりから、更に耐屈曲性、耐擦傷性の改善が望まれてき
た。In recent years, a method has been devised in which a transparent conductive layer is provided on a plastic film or sheet substrate via a 5in2 layer (0≦x≦1). However, due to the increasing performance requirements for transparent electrodes using plastic films or sheets as substrates, further improvements in bending resistance and scratch resistance have been desired.
本発明は、Ｓ １０２−１層を介して形成された透明導
電層の耐屈曲性、耐擦傷性を改良し、可と５性、加工性
に優れた透明電極を提供することを目的とするものであ
る。The present invention aims to improve the bending resistance and scratch resistance of a transparent conductive layer formed via an S102-1 layer, and to provide a transparent electrode with excellent flexibility and processability. It is something.
本発明者らは、プラスチックフィルム又はシートを基板
とした透明電極の製造方法を鋭意検討した結果、基板／
５ｉ（ｈ一層／透明導電層の各層の厚＾において特別
な関係を満足するものが、耐屈曲性、耐擦傷性において
優れていることを見い出し、本発明に到達した。As a result of intensive study on the manufacturing method of transparent electrodes using plastic films or sheets as substrates, the present inventors discovered that
We have discovered that a material that satisfies a special relationship between 5i(h single layer/thickness of each layer of the transparent conductive layer) is excellent in bending resistance and scratch resistance, and has arrived at the present invention.
すなわち、本発明は、透明なプラスチックフィルム又は
シート（Ａ）の少な（とも片面にＳｉＯ２−（０≦ｘ≦
１）薄膜層（Ｂｌを介して透明導電性薄膜層（Ｃ）を形
成してなる透明電極において、Ｓ ｉｏ ２−薄膜層（
Ｂｌの厚み（Ｔ１）と透明なプラスチックフィルム又は
シート囚の厚み（Ｔ２）及び透明導電性薄膜層（Ｃ１の
厚み（Ｔ８）とが、次の関係
Ｔｌ ／ Ｔ２ ≦０．０２
（Ｔｌ＋ Ｔｓ）／ ＴａＳ２．０３
Ｔｓ／ Ｔｌ≦２
を満足することを特徴とする透明電極であり、より好ま
しくは
ＴＩ／ Ｔ２≦０．０１
（Ｔ＋ ＋ Ｔｇ） ／ Ｔ２≦ｏ、ｏｉｓＴｓ／ Ｔ
＋≦１
を満足する透明電極である。That is, the present invention provides a transparent plastic film or sheet (A) with a small amount of SiO2-(0≦x≦
1) In a transparent electrode formed by forming a transparent conductive thin film layer (C) through a thin film layer (Bl), S io 2-thin film layer (
The thickness of Bl (T1), the thickness of the transparent plastic film or sheet (T2), and the thickness of the transparent conductive thin film layer (C1 (T8)) have the following relationship Tl / T2 ≦0.02 (Tl + Ts) / A transparent electrode characterized by satisfying TaS2.03 Ts/Tl≦2, more preferably TI/T2≦0.01 (T+ + Tg)/T2≦o, oisTs/T
It is a transparent electrode that satisfies +≦1.
以下、本発明を図面を参照しながら詳述する。Hereinafter, the present invention will be explained in detail with reference to the drawings.
第１図は本発明による透明電極の構造を示す断、面図の
１例であり、透明なプラスチックフィルム又はシートか
ら成る基板１の片面に、ＳｉＯ２−（０≦ｘ≦１）層２
、ついで、透明導電層３が、順次積層されている。FIG. 1 is an example of a cross-sectional view and a cross-sectional view showing the structure of a transparent electrode according to the present invention, in which a SiO2-(0≦x≦1) layer 2
, and then a transparent conductive layer 3 is sequentially laminated.
本発明で用いる透明なプラスチックフィルム又はシート
としては、６００ ｎｍの波長の光線透過率が少な（と
も８０％以上のものが望ましいが、それ自体が偏光フィ
ルムである場合には、この限りでない。また、素材とし
ては、疎水性樹脂が望ましく、さらに、耐熱性が高いも
のがより好ましい。The transparent plastic film or sheet used in the present invention has a low light transmittance at a wavelength of 600 nm (desirably 80% or more, but this does not apply if the film itself is a polarizing film. The material is preferably a hydrophobic resin, and more preferably one with high heat resistance.
好ましい材料を例示するならば、ポリオレフィン、ポリ
エステル、ポリアミド、ポリエーテル、ポリスルホン、
ポリビニル、ポリエーテルスルホン、ポリカーボネート
、等のホモポリマー、又は、コポリマーがあげられる。Examples of preferred materials include polyolefin, polyester, polyamide, polyether, polysulfone,
Examples include homopolymers and copolymers such as polyvinyl, polyethersulfone, and polycarbonate.
本発明に用いる透明なプラスチックフィルム又はシート
囚の厚みとしては、通常５〜１０００μ、好ましくは、
３０〜５００μの範囲である。The thickness of the transparent plastic film or sheet used in the present invention is usually 5 to 1000 μm, preferably,
It is in the range of 30 to 500μ.
上記フィルム又はシートの片面に、順次ＳｉＯｚ一層及
び透明導電層を形成する方法としては、スプレー法、塗
布法、真空処理法、等の公知の方法が利用できるが、５
ｉ０２一層を形成した後、Ｓ ｉＯｓ＋−□層を大気中
に暴露することなく透明導電層を形成できる方法がより
好ましく、この点で真空処理法がより好ましく利用され
る。ここで真空処理法とは、おおむねの真空下で被膜を
形成する方法であり、真空蒸着法、スパンタリング法、
イオンプレーティング法、プラズマＣＶＤ （Ｃｈｅｍ
ｉｃａｔＶａｐｏｒＤｅｐｏｓｉｔｉｏｎ ）法、等が
ある。さらに、これらの中で、特に好ましいのは、高周
波イオンプレーティング法である。高周波イオンプレー
ティング法とは、高周波グロー放電下で、真空蒸着法と
類似した方法で材料を加熱蒸発させ、基板上に付着させ
る方法である。As a method for sequentially forming a SiOz layer and a transparent conductive layer on one side of the above film or sheet, known methods such as a spray method, a coating method, a vacuum treatment method, etc. can be used.
A method that can form a transparent conductive layer without exposing the SiOs+-□ layer to the atmosphere after forming the iO2 layer is more preferable, and in this respect, a vacuum processing method is more preferably used. Here, the vacuum processing method is a method of forming a film under a general vacuum, and includes vacuum evaporation method, sputtering method,
Ion plating method, plasma CVD (Chem
icatVaporDeposition) method, etc. Further, among these, particularly preferred is the high frequency ion plating method. The high-frequency ion plating method is a method in which a material is heated and evaporated under high-frequency glow discharge using a method similar to a vacuum evaporation method, and is deposited on a substrate.
透明導電層としては、５ｎ０２、Ｉｒ＋＋Ｏａ等の金属
酸化物、及びこれらの混合物、又はＡｕ、 Ｐｔ、 Ｐ
ｂ等の金属等の被膜が好ましく用いられ、必要に応じて
加熱蓋化処理される。As the transparent conductive layer, metal oxides such as 5n02, Ir++Oa, and mixtures thereof, or Au, Pt, P
A coating made of metal such as b is preferably used, and is heated and covered if necessary.
本発明で形成される５ｉｎ２−薄膜層（Ｂ）の厚み（Ｔ
＋）は、通常５０〜５０，０００人、好ましくは１００
〜２０，０００人の範囲である。また、透明導電性薄膜
層（Ｃ）の厚み（Ｔ８）は、通常５０〜１０．ＯＤＤλ
、好ましくは、１００〜５，０００人の範囲である。Thickness (T) of 5in2-thin film layer (B) formed in the present invention
+) is usually 50 to 50,000 people, preferably 100
~20,000 people. Further, the thickness (T8) of the transparent conductive thin film layer (C) is usually 50 to 10. ODDλ
, preferably in the range of 100 to 5,000 people.
本発明の透明電極において、厚み（Ｔ８）が厚み（Ｔ１
）の２倍を越えると、耐屈曲性が著しく低下しプラスチ
ックフィルム又はシートを基材とした透明電極の特徴の
一つである可とう性の点で満足なものとはならない。In the transparent electrode of the present invention, the thickness (T8) is equal to the thickness (T1
), the bending resistance will be markedly reduced and the flexibility, which is one of the characteristics of transparent electrodes based on plastic films or sheets, will not be satisfactory.
また、厚み（Ｔ３）が厚み（Ｔ、）の２倍以下であって
も、Ｔ８とＴ＋は、プラスチックフィルム又はシートの
厚み（Ｔ２）に比し一定値以下でないと耐屈曲性の点で
問題となる。即ち、夫々の厚みＴ１、Ｔ。In addition, even if the thickness (T3) is less than twice the thickness (T, ), T8 and T+ must be less than a certain value compared to the thickness (T2) of the plastic film or sheet, otherwise there will be problems in terms of bending resistance. becomes. That is, the respective thicknesses T1 and T.
Ｔ３は、次の関係
ＴＩ／ Ｔ２ ≦０．０２
（Ｔ＋ ＋ Ｔｓ） ／ Ｔ２≦０．０３Ｔａ／ Ｔ＋
≦２
を、すべて満足しない場合は可とう性に丁ぐれた透明電
極は得られない。T3 is based on the following relationship TI/ T2 ≦0.02 (T+ + Ts) / T2≦0.03 Ta/ T+
If all of ≦2 are not satisfied, a transparent electrode with good flexibility cannot be obtained.
本発明の透明電極は、プラスチックフィルム又はシート
の片面に形成されて液晶表示用電極、電場発光体用電極
、タッチパネル用電極、光導電性感光体用電極、等の分
野に利用しても良いし、まい。The transparent electrode of the present invention may be formed on one side of a plastic film or sheet and used in fields such as electrodes for liquid crystal displays, electrodes for electroluminescent materials, electrodes for touch panels, electrodes for photoconductive photoreceptors, etc. ,dance.
本発明の透明電極は、構成する各層において特定された
厚みの関係を有するので耐屈曲性、耐擦傷性に優れてお
り、透明電極製造過程および透明電極を利用した素子、
たとえば、液晶表示パネル、等の製造過程における断線
等のトラブルを防止することができる。The transparent electrode of the present invention has a specified thickness relationship in each of its constituent layers, so it has excellent bending resistance and scratch resistance.
For example, troubles such as wire breakage in the manufacturing process of liquid crystal display panels and the like can be prevented.
以下、実施例によって本発明を詳述する。なお実施例中
の測定値は次の方法によった。Hereinafter, the present invention will be explained in detail with reference to Examples. Note that the measured values in the examples were determined by the following method.
光線透過率：
可視分光光度計を用いて、６００ ｎｍにおける光線透
過率を測定した。Light transmittance: Light transmittance at 600 nm was measured using a visible spectrophotometer.
電気抵抗率： 四探針法で、シート抵抗率を測定した。Electrical resistivity: Sheet resistivity was measured using the four-probe method.
耐屈曲性：
直径５朋の円柱にそって、透明導電層形成面を外側とし
、１８０度屈白させ、１分間保持後の電気抵抗率（Ｒ）
を測定し、処理前の電気抵抗率（ＲＯ）との比（Ｒ／
Ｒｏ ） ’？：求めた。Flexibility: Electrical resistivity (R) after bending 180 degrees along a cylinder with a diameter of 5 mm with the surface on which the transparent conductive layer is formed on the outside and holding for 1 minute.
Measure the electrical resistivity (RO) and the ratio (R/
Ro)'? : asked.
耐擦傷性：
透明導電層形成面を、１０１１／ｉの荷重下にガーゼを
介して１００回こすったのちの電気抵抗率（Ｒ）を測定
し、処理前の電気抵抗率（Ｒｏ ）との比（Ｒ／Ｒｏ）
’Ｙ求めた。Scratch resistance: The surface on which the transparent conductive layer was formed was rubbed 100 times through gauze under a load of 1011/i, and then the electrical resistivity (R) was measured, and the ratio with the electrical resistivity (Ro) before treatment was measured. (R/Ro)
'Y asked.
膜厚：
薄膜形成面と非形成面の段差（ｘｌ）と、１８％塩酸エ
ッチインク後の段差（ｘ２）を触針法で測定し、ｘ２を
ＳｉＯ２−、層厚み、（、ｒｌ ｆｆｉ ２ ）を透
明導電層厚みとした。Film thickness: The level difference (xl) between the thin film forming surface and the non-forming surface and the level difference (x2) after 18% hydrochloric acid etch ink were measured using the stylus method, and x2 is SiO2-, layer thickness, (, rl ffi 2 ) is the thickness of the transparent conductive layer.
実施例１〜３および比較例１
厚みが１００細で６００ ｎｍにおける光線透過率が８
９％のポリエーテルスルホン製未延伸フィルムを基板と
し、該基板上に高周波イオンプレーティング法により各
種の厚みの５ｉ０２一層及び透明導電層を順次、連続し
て形成した。Examples 1 to 3 and Comparative Example 1 The thickness is 100 mm and the light transmittance at 600 nm is 8.
A 9% polyether sulfone unstretched film was used as a substrate, and a 5i02 layer and a transparent conductive layer of various thicknesses were sequentially and continuously formed on the substrate by high frequency ion plating.
その平頭を示すと、純度９９９９％のＳｉＯｚを蒸発源
−１、Ｉ Ｔｏ （Ｉｎｄｉｕｍ Ｔｉｎ ０ｘｉｄｅ
） （ＳｎＯ２： ５％）を蒸発源−２とし、蒸発源
上３５０藺の位置にセクトされた水冷基板ホルダーに該
フィルムを装着し、真空槽内を５ Ｘ １０””５Ｔｏ
ｒｒ以下まで排気後、９９％の酸素ガスを導入し、槽内
を５ Ｘ １０−’ Ｔｏｒｒに設定したのち、この状
態でＲＦ電力を４００Ｗ投入して、磁気偏向型Ｅ／Ｂガ
ンにより蒸発源−１を各種時間蒸発させた。その後、Ｅ
／Ｂガンの電源を切ってから、蒸発源を１から２に切り
換え、再びＥ／Ｂガンの電源を入れ、蒸発源−２を各種
時間蒸発させた。The flat head shows that SiOz with a purity of 9999% is used as the evaporation source-1, I To (Indium Tin Oxide
) (SnO2: 5%) as the evaporation source-2, the film was mounted on a water-cooled substrate holder set at a position 350 mm above the evaporation source, and the inside of the vacuum chamber was
After evacuation to below rr, 99% oxygen gas was introduced and the inside of the tank was set at 5 x 10-' Torr. In this state, 400 W of RF power was applied and the evaporation source was removed using a magnetic deflection type E/B gun. -1 was allowed to evaporate for various times. After that, E
After turning off the /B gun, switching the evaporation source from 1 to 2, and turning on the E/B gun again, evaporation source-2 was allowed to evaporate for various times.
このようにして得たポリエーテルスルホン製未延伸フィ
ルム／５ｉｎ２−、層（Ｘは、はぼ０）／透明導電層の
積層物の特性を第１表に示す。Table 1 shows the properties of the thus obtained laminate of polyether sulfone unstretched film/5in2- layer (X is 0)/transparent conductive layer.
実施例４〜５および比較例２〜３
厚みが１００μｍで、６００ ｎｍにおける光線透過率
が９２％のポリエチレンテレフタレート製１軸延伸フイ
ルムを基板とし、実施例１と同様の方法で、該基板上に
、各種厚みのＳｉＯｚ一層、ＩＴＯ層を形成した。該積
層物の特性を第１表に併記する。Examples 4 to 5 and Comparative Examples 2 to 3 A uniaxially stretched polyethylene terephthalate film having a thickness of 100 μm and a light transmittance of 92% at 600 nm was used as a substrate, and a film was coated on the substrate in the same manner as in Example 1. , a single SiOz layer and an ITO layer of various thicknesses were formed. The properties of the laminate are also listed in Table 1.
実施例６
Ｓ １Ｏｚ−□層形成後、該膜を大気中に暴露してから
、ＩＴＯ層を形成したことを除き、実施例２と同様の方
法で、積層物を得た。被積層物の特性を第１表に併記す
る。Example 6 A laminate was obtained in the same manner as in Example 2, except that after forming the S 1Oz-□ layer, the film was exposed to the atmosphere and then the ITO layer was formed. The properties of the laminated product are also listed in Table 1.
実捲例７
実施例１と同様の方法でＳｉＯ２−１層形成後、該積層
物を大気中にとりだし、その後、Ｉｎ −Ｓｎ金属（Ｓ
ｎ ： ５％）から成るターゲットを用いて、マグネト
ロンスパッタ法で、該Ｓ １０２−□層上に、ＩＴＯ膜
を形成した。Actual Winding Example 7 After forming the SiO2-1 layer in the same manner as in Example 1, the laminate was taken out into the atmosphere, and then In-Sn metal (S
An ITO film was formed on the S 102-□ layer by magnetron sputtering using a target consisting of (n: 5%).
その手順を示すと、基板とターゲット間の距離を４０＋
ｕとし、真空槽内を５ Ｘ Ｉ Ｄ−’Ｔｏｒｒ以下に
排気後、酸素を５％含む酸素−アルゴン混合ガスを導入
して、５ Ｘ １０＝ Ｔｏｒｒとしたのち、ＲＦ電力
を５００Ｗ投入し、１５分間、ターゲットのプレスパツ
タリングを行ない、しかるのちに、該５ｉＣ）＋−ｘ層
上にＩＴＯ！を形成した。To show the procedure, the distance between the board and target is 40+
After evacuating the inside of the vacuum chamber to below 5 X I D-' Torr, an oxygen-argon mixed gas containing 5% oxygen was introduced to bring the temperature to 5 X 10 = Torr, and then 500 W of RF power was input. Pre-sputtering the target for 15 minutes and then depositing ITO! on the 5iC)+-x layer. was formed.
該積層物の特性を第１表に併記する。The properties of the laminate are also listed in Table 1.
実施例８
実施例１と同様の方法で、５ｉｎ２−３ｅ層形成後、槽
内な７ Ｘ １０”−’ Ｔｏｒｒに設定し、この状態
でＲＦ電力を４００Ｗ投入して、磁気偏向型Ｅ／Ｂガン
によりＩｎ金楓な蒸発させ、該ＳｉＯｚ一層上に酸化イ
ンジウム層を形成した。Example 8 After forming a 5-inch 2-3e layer in the same manner as in Example 1, the tank was set to 7 x 10''-' Torr, and in this state, 400 W of RF power was applied to create a magnetic deflection type E/B. Indium was evaporated using a gun to form an indium oxide layer on the SiOz layer.
該積層物の特性を第１表に併記する。The properties of the laminate are also listed in Table 1.
実施例１．２．３と比較例１の比較から、Ｔａ／ Ｔ＋
が２を越えると、耐屈曲性が著しく低下することがわか
る。From the comparison between Example 1.2.3 and Comparative Example 1, Ta/T+
It can be seen that when the value exceeds 2, the bending resistance is significantly reduced.
実施例４，５と比較例２の比較から、ＴＩ／ Ｔ２が０
．０２を越えると、耐屈曲性カミ著しく低下することが
わかる。From the comparison of Examples 4 and 5 and Comparative Example 2, TI/T2 is 0.
．． It can be seen that when the value exceeds 02, the bending resistance significantly decreases.
実施例５と比較例乙の比較から、（ＴＩ ＋ Ｔ１１
）／ Ｔ２が０．０６を越えると耐屈曲性が著しく低下
することがわかる。From the comparison between Example 5 and Comparative Example B, (TI + T11
)/T2 exceeds 0.06, it can be seen that the bending resistance is significantly reduced.
実施例２と実施例６の比較から、ＳｉＯ＋−３ｅ薄膜層
形成後、該膜を大気中に暴露してから透明導電層を形成
すると、ＳｉＯｚ−薄膜層形成後に該膜を大気中に暴露
するごとな（透明導電層を形成した場合と比べ、耐屈曲
性、耐擦傷性ともやや低下することがわかる。From the comparison between Example 2 and Example 6, it is found that after forming the SiO+-3e thin film layer, the film is exposed to the atmosphere before forming the transparent conductive layer, whereas after forming the SiOz- thin film layer, the film is exposed to the atmosphere. It can be seen that both the bending resistance and scratch resistance are slightly lower than when a transparent conductive layer is formed.
実施例６と７の比較から、スパッタリング法で透明電極
を形成した場合、高周波イオンプレーティング法で形成
した場合と比べ、電気抵抗率は太き（なり耐屈曲性、耐
擦傷性はやや低下することがわかる。A comparison of Examples 6 and 7 shows that when transparent electrodes are formed by sputtering, the electrical resistivity is thicker (and the bending resistance and scratch resistance are slightly lower) than when they are formed by high-frequency ion plating. I understand that.
実施例８から、透明導電層はＩＴＯでも、酸化インジウ
ムでも特性に顕著な差異がないことがわかる。From Example 8, it can be seen that there is no significant difference in characteristics between ITO and indium oxide for the transparent conductive layer.
第１図は本発明による透明電極の構造を示す断面図の１
例であり、図中、１は基板、２は５ｉ０２−ｘ層、６は
透明導電層である。FIG. 1 is a cross-sectional view showing the structure of a transparent electrode according to the present invention.
This is an example, and in the figure, 1 is a substrate, 2 is a 5i02-x layer, and 6 is a transparent conductive layer.
Claims (3)
少なくとも片面にＳｉＯ＿２＿−＿ｘ（０≦ｘ≦１）薄
膜層（Ｂ）を介して透明導電性薄膜層（Ｃ）を形成して
なる透明電極において、ＳｉＯ＿２＿−＿ｘ薄膜層（Ｂ
）の厚み（Ｔ＿１）と透明なプラスチックフィルム又は
シート（Ａ）の厚み（Ｔ＿２）及び透明導電性薄膜層（
Ｃ）の厚み（Ｔ＿３）とが、次の関係 Ｔ＿１／Ｔ＿２≦０．０２ （Ｔ＿１＋Ｔ＿３）／Ｔ＿２≦０．０３ Ｔ＿３／Ｔ＿１≦２ を満足することを特徴とする透明電極。(1) In a transparent electrode formed by forming a transparent conductive thin film layer (C) on at least one side of a transparent plastic film or sheet (A) via a SiO_2_-_x (0≦x≦1) thin film layer (B) , SiO_2_-_x thin film layer (B
) thickness (T_1) of the transparent plastic film or sheet (A) (T_2) and the transparent conductive thin film layer (
A transparent electrode characterized in that the thickness (T_3) of C) satisfies the following relationship T_1/T_2≦0.02 (T_1+T_3)/T_2≦0.03 T_3/T_1≦2.
薄膜層（Ｃ）がおおむねの真空下で順次連続して形成さ
れたものである特許請求の範囲第１項記載の透明電極。(2) The transparent electrode according to claim 1, wherein the SiO_2_-_x thin film layer (B) and the transparent conductive thin film layer (C) are formed successively and continuously under a general vacuum.
薄膜層（Ｃ）が高周波イオンプレーティング法で形成さ
れたものである特許請求の範囲第２項記載の透明電極。(3) The transparent electrode according to claim 2, wherein the SiO_2_-_x thin film layer (B) and the transparent conductive thin film layer (C) are formed by a high frequency ion plating method.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60022561A JPS61183810A (en) | 1985-02-07 | 1985-02-07 | Transparent electrode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60022561A JPS61183810A (en) | 1985-02-07 | 1985-02-07 | Transparent electrode |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS61183810A true JPS61183810A (en) | 1986-08-16 |
Family
ID=12086275
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60022561A Pending JPS61183810A (en) | 1985-02-07 | 1985-02-07 | Transparent electrode |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61183810A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2012141058A1 (en) * | 2011-04-14 | 2012-10-18 | 富士フイルム株式会社 | Conductive member, method for producing conductive member, touch panel, and solar cell |
| WO2012147955A1 (en) * | 2011-04-28 | 2012-11-01 | 富士フイルム株式会社 | Conductive member, method for producing same, touch panel, and solar cell |
| WO2012147956A1 (en) * | 2011-04-28 | 2012-11-01 | 富士フイルム株式会社 | Conductive member, method for producing same, touch panel and solar cell |
| CN104205247A (en) * | 2012-03-23 | 2014-12-10 | 富士胶片株式会社 | Conductive member and method for manufacturing same |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59204545A (en) * | 1983-05-10 | 1984-11-19 | 住友ベークライト株式会社 | Laminated conductive film |
| JPS61146533A (en) * | 1984-12-20 | 1986-07-04 | ダイセル化学工業株式会社 | Transparent conductive laminated film |
-
1985
- 1985-02-07 JP JP60022561A patent/JPS61183810A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59204545A (en) * | 1983-05-10 | 1984-11-19 | 住友ベークライト株式会社 | Laminated conductive film |
| JPS61146533A (en) * | 1984-12-20 | 1986-07-04 | ダイセル化学工業株式会社 | Transparent conductive laminated film |
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|---|---|---|---|---|
| JP2013137982A (en) * | 2011-04-14 | 2013-07-11 | Fujifilm Corp | Conductive member, method for producing conductive member, touch panel, and solar cell |
| WO2012141058A1 (en) * | 2011-04-14 | 2012-10-18 | 富士フイルム株式会社 | Conductive member, method for producing conductive member, touch panel, and solar cell |
| CN103503081A (en) * | 2011-04-28 | 2014-01-08 | 富士胶片株式会社 | Conductive member, method for producing same, touch panel and solar cell |
| WO2012147956A1 (en) * | 2011-04-28 | 2012-11-01 | 富士フイルム株式会社 | Conductive member, method for producing same, touch panel and solar cell |
| JP2013225461A (en) * | 2011-04-28 | 2013-10-31 | Fujifilm Corp | Conductive member, method for producing the same, touch panel, and solar cell |
| JP2013225460A (en) * | 2011-04-28 | 2013-10-31 | Fujifilm Corp | Conductive member, method for producing the same, touch panel, and solar cell |
| WO2012147955A1 (en) * | 2011-04-28 | 2012-11-01 | 富士フイルム株式会社 | Conductive member, method for producing same, touch panel, and solar cell |
| CN103597550A (en) * | 2011-04-28 | 2014-02-19 | 富士胶片株式会社 | Conductive member, method for producing same, touch panel, and solar cell |
| KR20140042798A (en) * | 2011-04-28 | 2014-04-07 | 후지필름 가부시키가이샤 | Conductive member, method for producing same, touch panel and solar cell |
| KR20140042797A (en) * | 2011-04-28 | 2014-04-07 | 후지필름 가부시키가이샤 | Conductive member, method for producing same, touch panel, and solar cell |
| CN103503081B (en) * | 2011-04-28 | 2016-11-23 | 富士胶片株式会社 | Electroconductive member, its manufacture method, touch screen and solar cell |
| CN104205247A (en) * | 2012-03-23 | 2014-12-10 | 富士胶片株式会社 | Conductive member and method for manufacturing same |
| CN104205247B (en) * | 2012-03-23 | 2015-09-16 | 富士胶片株式会社 | Electroconductive component and manufacture method thereof |
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