JPS646547B2 - - Google Patents

Info

Publication number
JPS646547B2
JPS646547B2 JP55087329A JP8732980A JPS646547B2 JP S646547 B2 JPS646547 B2 JP S646547B2 JP 55087329 A JP55087329 A JP 55087329A JP 8732980 A JP8732980 A JP 8732980A JP S646547 B2 JPS646547 B2 JP S646547B2
Authority
JP
Japan
Prior art keywords
layer
semiconductor region
semiconductor
region
refractive index
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP55087329A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5712571A (en
Inventor
Takafumi Tsuji
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Priority to JP8732980A priority Critical patent/JPS5712571A/ja
Publication of JPS5712571A publication Critical patent/JPS5712571A/ja
Publication of JPS646547B2 publication Critical patent/JPS646547B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/186—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors having arrangements for blooming suppression

Landscapes

  • Light Receiving Elements (AREA)
JP8732980A 1980-06-27 1980-06-27 Semiconductor photodetector Granted JPS5712571A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8732980A JPS5712571A (en) 1980-06-27 1980-06-27 Semiconductor photodetector

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8732980A JPS5712571A (en) 1980-06-27 1980-06-27 Semiconductor photodetector

Publications (2)

Publication Number Publication Date
JPS5712571A JPS5712571A (en) 1982-01-22
JPS646547B2 true JPS646547B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1989-02-03

Family

ID=13911824

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8732980A Granted JPS5712571A (en) 1980-06-27 1980-06-27 Semiconductor photodetector

Country Status (1)

Country Link
JP (1) JPS5712571A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6138529A (ja) * 1984-07-31 1986-02-24 Shimadzu Corp フオトダイオ−ドアレイセンサ−
JPS6166440U (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 1984-10-08 1986-05-07
JPH0644618B2 (ja) * 1986-04-03 1994-06-08 日産自動車株式会社 半導体受光装置
JPH04246860A (ja) * 1991-02-01 1992-09-02 Fujitsu Ltd 光電変換装置
JPH11230784A (ja) * 1998-02-12 1999-08-27 Hamamatsu Photonics Kk 光学式エンコーダ
KR20110052571A (ko) 2008-06-13 2011-05-18 마이클 제이. 파렐라 전기를 생산하기 위하여 천공된 유정 내에서 지열을 포착하는 시스템 및 방법
US8534069B2 (en) 2008-08-05 2013-09-17 Michael J. Parrella Control system to manage and optimize a geothermal electric generation system from one or more wells that individually produce heat
US9423158B2 (en) 2008-08-05 2016-08-23 Michael J. Parrella System and method of maximizing heat transfer at the bottom of a well using heat conductive components and a predictive model
JP4927136B2 (ja) * 2009-09-03 2012-05-09 株式会社九州パワーサービス 地熱発電装置
CN102569310B (zh) * 2010-12-31 2015-05-13 重庆鹰谷光电有限公司 无盲区、无光电串扰的硅象限光电探测器制作方法
JP5917352B2 (ja) * 2012-01-10 2016-05-11 ジャパン・ニュー・エナジー株式会社 蒸気発生システム、地熱発電システム、蒸気発生方法及び地熱発電方法

Also Published As

Publication number Publication date
JPS5712571A (en) 1982-01-22

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