JPS6464338A - Wiring for semiconductor device - Google Patents

Wiring for semiconductor device

Info

Publication number
JPS6464338A
JPS6464338A JP22014287A JP22014287A JPS6464338A JP S6464338 A JPS6464338 A JP S6464338A JP 22014287 A JP22014287 A JP 22014287A JP 22014287 A JP22014287 A JP 22014287A JP S6464338 A JPS6464338 A JP S6464338A
Authority
JP
Japan
Prior art keywords
film
oxygen
oxidized
thick
atomic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP22014287A
Other languages
Japanese (ja)
Inventor
Seiichi Iwata
Hiroshi Miyazaki
Akiko Mutou
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP22014287A priority Critical patent/JPS6464338A/en
Publication of JPS6464338A publication Critical patent/JPS6464338A/en
Pending legal-status Critical Current

Links

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

PURPOSE:To improve bondability by forming wirings of two layers of copper and copper layer containing specific atomic % of oxygen in a specific thickness. CONSTITUTION:Cu 3 of 300nm thick is deposited, and a shutter is adjusted at the initial of the deposition to reduce the quantity of the Cu which arrives at a substrate. A layer 4 in which approx. 20atomic% oxygen is contained in thickness of 8nm in the Cu is formed. The thin Cu film 3 is mechanically exfoliated from the SiO2 film 2, adhered to the film 2, and the remaining Cu to the film 2 is considerably oxidized, and also oxidized from the rear side of the Cu. As a result, the Cu which is oxidized has better bondability to the film 2. This effect is recognized when the Cu/SiO boundary layer is 0.5-20nm thick and contains 10-50 atomic % oxygen.
JP22014287A 1987-09-04 1987-09-04 Wiring for semiconductor device Pending JPS6464338A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP22014287A JPS6464338A (en) 1987-09-04 1987-09-04 Wiring for semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP22014287A JPS6464338A (en) 1987-09-04 1987-09-04 Wiring for semiconductor device

Publications (1)

Publication Number Publication Date
JPS6464338A true JPS6464338A (en) 1989-03-10

Family

ID=16746555

Family Applications (1)

Application Number Title Priority Date Filing Date
JP22014287A Pending JPS6464338A (en) 1987-09-04 1987-09-04 Wiring for semiconductor device

Country Status (1)

Country Link
JP (1) JPS6464338A (en)

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05102318A (en) * 1991-04-05 1993-04-23 Internatl Business Mach Corp <Ibm> Method and apparatus for forming conductive copper alloy plug
US6180505B1 (en) 1999-01-07 2001-01-30 International Business Machines Corporation Process for forming a copper-containing film
US6235406B1 (en) 1998-12-02 2001-05-22 International Business Machines Corporation Copper film including laminated impurities
US6258707B1 (en) 1999-01-07 2001-07-10 International Business Machines Corporation Triple damascence tungsten-copper interconnect structure
US6572982B1 (en) 1998-12-02 2003-06-03 International Business Machines Corporation Electromigration-resistant copper microstructure
JP2008277685A (en) * 2007-05-07 2008-11-13 Mitsubishi Materials Corp Interconnection film and electrode film for flat panel display using thin film transistor (tft) superior in adhesiveness, and sputtering target for forming them
JP2008311283A (en) * 2007-06-12 2008-12-25 Mitsubishi Materials Corp Wiring bed film excellent in adhesiveness, and sputtering target for forming it
JP2009038284A (en) * 2007-08-03 2009-02-19 Mitsubishi Materials Corp Thin film transistor
JP2009043797A (en) * 2007-08-07 2009-02-26 Mitsubishi Materials Corp Thin film transistor
JP2009170769A (en) * 2008-01-18 2009-07-30 Mitsubishi Materials Corp Thin-film transistor
WO2010001823A1 (en) * 2008-06-30 2010-01-07 日立金属株式会社 SPUTTERING TARGET, PROCESS FOR PRODUCING THE SPUTTERING TARGET, AND PROCESS FOR PRODUCING Cu OXIDE LAYER
JP2013141018A (en) * 2013-03-28 2013-07-18 Mitsubishi Materials Corp Method for manufacturing wiring base film with excellent adhesion
JP5424876B2 (en) * 2007-06-05 2014-02-26 株式会社アルバック Thin film transistor manufacturing method, liquid crystal display device manufacturing method, and electrode forming method

Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05102318A (en) * 1991-04-05 1993-04-23 Internatl Business Mach Corp <Ibm> Method and apparatus for forming conductive copper alloy plug
US6235406B1 (en) 1998-12-02 2001-05-22 International Business Machines Corporation Copper film including laminated impurities
US6572982B1 (en) 1998-12-02 2003-06-03 International Business Machines Corporation Electromigration-resistant copper microstructure
US6180505B1 (en) 1999-01-07 2001-01-30 International Business Machines Corporation Process for forming a copper-containing film
US6258707B1 (en) 1999-01-07 2001-07-10 International Business Machines Corporation Triple damascence tungsten-copper interconnect structure
US6274935B2 (en) 1999-01-07 2001-08-14 International Business Machines Corporation Copper wire-bonding pad
JP2008277685A (en) * 2007-05-07 2008-11-13 Mitsubishi Materials Corp Interconnection film and electrode film for flat panel display using thin film transistor (tft) superior in adhesiveness, and sputtering target for forming them
JP5424876B2 (en) * 2007-06-05 2014-02-26 株式会社アルバック Thin film transistor manufacturing method, liquid crystal display device manufacturing method, and electrode forming method
JP2008311283A (en) * 2007-06-12 2008-12-25 Mitsubishi Materials Corp Wiring bed film excellent in adhesiveness, and sputtering target for forming it
JP2009038284A (en) * 2007-08-03 2009-02-19 Mitsubishi Materials Corp Thin film transistor
JP2009043797A (en) * 2007-08-07 2009-02-26 Mitsubishi Materials Corp Thin film transistor
JP2009170769A (en) * 2008-01-18 2009-07-30 Mitsubishi Materials Corp Thin-film transistor
WO2010001823A1 (en) * 2008-06-30 2010-01-07 日立金属株式会社 SPUTTERING TARGET, PROCESS FOR PRODUCING THE SPUTTERING TARGET, AND PROCESS FOR PRODUCING Cu OXIDE LAYER
JP2013141018A (en) * 2013-03-28 2013-07-18 Mitsubishi Materials Corp Method for manufacturing wiring base film with excellent adhesion

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